JP2009530849A5 - - Google Patents
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- JP2009530849A5 JP2009530849A5 JP2009501436A JP2009501436A JP2009530849A5 JP 2009530849 A5 JP2009530849 A5 JP 2009530849A5 JP 2009501436 A JP2009501436 A JP 2009501436A JP 2009501436 A JP2009501436 A JP 2009501436A JP 2009530849 A5 JP2009530849 A5 JP 2009530849A5
- Authority
- JP
- Japan
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing composition
- substrate
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 claims 18
- 239000000203 mixture Substances 0.000 claims 13
- 239000000126 substance Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 8
- -1 iodate ions Chemical class 0.000 claims 4
- 238000005296 abrasive Methods 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- OFJATJUUUCAKMK-UHFFFAOYSA-N Cerium(IV) oxide Chemical compound [O-2]=[Ce+4]=[O-2] OFJATJUUUCAKMK-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 1H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims 1
- PAEXAIBDCHBNDC-UHFFFAOYSA-N 2-pyridin-4-ylacetic acid Chemical compound OC(=O)CC1=CC=NC=C1 PAEXAIBDCHBNDC-UHFFFAOYSA-N 0.000 claims 1
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2H-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 claims 1
- VQNDBXJTIJKJPV-UHFFFAOYSA-N 2H-triazolo[4,5-b]pyridine Chemical compound C1=CC=NC2=NNN=C21 VQNDBXJTIJKJPV-UHFFFAOYSA-N 0.000 claims 1
- MVRGLMCHDCMPKD-UHFFFAOYSA-N 3-amino-1H-1,2,4-triazole-5-carboxylic acid Chemical compound NC1=NNC(C(O)=O)=N1 MVRGLMCHDCMPKD-UHFFFAOYSA-N 0.000 claims 1
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims 1
- NIPZZXUFJPQHNH-UHFFFAOYSA-N Pyrazinoic acid Chemical compound OC(=O)C1=CN=CC=N1 NIPZZXUFJPQHNH-UHFFFAOYSA-N 0.000 claims 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N Trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims 1
- 150000003973 alkyl amines Chemical class 0.000 claims 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 1
- DVEIDGKSJOJJJU-UHFFFAOYSA-N benzotriazole-1-carbaldehyde Chemical compound C1=CC=C2N(C=O)N=NC2=C1 DVEIDGKSJOJJJU-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 239000008119 colloidal silica Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910021485 fumed silica Inorganic materials 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims 1
- 229940005633 iodate ion Drugs 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- BAVYZALUXZFZLV-UHFFFAOYSA-N methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims 1
- PVNIIMVLHYAWGP-UHFFFAOYSA-N nicotinic acid Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000011780 sodium chloride Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Claims (11)
- 基材を研磨するための化学機械研磨用組成物であって、
（ａ）０．０５ｗｔ％〜１０ｗｔ％の研磨剤と、
（ｂ）０．０５ｗｔ％〜４ｗｔ％のヨウ素酸イオンと、
（ｃ）窒素含有Ｃ4-20複素環及びＣ1-20アルキルアミンからなる群より選択される０．０１ｗｔ％〜１ｗｔ％の窒素含有化合物と、
（ｄ）水を含む液体キャリヤーと
を含み、前記化学機械研磨用組成物のｐＨが１〜５である、基材を研磨するための化学機械研磨用組成物。 - 前記窒素含有化合物が、１Ｈ−１，２，３−ベンゾトリアゾール、１Ｈ−１，２，３−ベンゾトリアゾール−５−カルボン酸、１，２，４−トリアゾール、５−メチル−１Ｈ−ベンゾトリアゾール、４−アミノ−１，２，４−トリアゾール、１Ｈ−ベンゾトリアゾール−１−カルボキシアルデヒド、３−アミノ−１，２，４−トリアゾール−５−カルボン酸、ピラゾール、２−ピラジンカルボン酸、２，６−ピリジンカルボン酸、４−ピリジル酢酸、１Ｈ−１，２，３−トリアゾロ［４，５−ｂ］ピリジン、メチルアミン、トリメチルアミン、それらの塩、及びそれらの組み合わせからなる群より選択される、請求項１に記載の化学機械研磨用組成物。
- 前記ヨウ素酸イオンが０．０５ｗｔ％〜０．４ｗｔ％の量で存在する、請求項１に記載の化学機械研磨用組成物。
- 前記窒素含有化合物が０．１ｗｔ％〜０．２５ｗｔ％の量で存在する、請求項１に記載の化学機械研磨用組成物。
- 前記研磨剤が０．２５ｗｔ％〜０．５ｗｔ％の量で存在する、請求項１に記載の化学機械研磨用組成物。
- 前記研磨剤が、コロイドシリカ、ヒュームドシリカ、ヒュームドアルミナ、αアルミナ、及びセリアからなる群より選択される、請求項１に記載の化学機械研磨用組成物。
- 前記化学機械研磨用組成物のｐＨが２〜４である、請求項１に記載の化学機械研磨用組成物。
- （ａ）基材を用意する工程、
（ｂ）該基材を、研磨パッド及び請求項１〜７のいずれか１項に記載の化学機械研磨用組成物と接触させる工程、
（ｃ）前記基材に対して前記研磨パッドを該化学機械研磨用組成物をそれらの間に置いて動かす工程、及び
（ｄ）該基材の少なくとも一部を削って該基材を研磨する工程
を含む、基材を化学機械研磨する方法。 - 前記基材が金属層を含む、請求項８に記載の方法。
- 前記金属層がタンタルを含む、請求項９に記載の方法。
- 前記金属層が銅をさらに含む、請求項１０に記載の方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/387,558 | 2006-03-23 | ||
| US11/387,558 US8551202B2 (en) | 2006-03-23 | 2006-03-23 | Iodate-containing chemical-mechanical polishing compositions and methods |
| PCT/US2007/005722 WO2007111813A2 (en) | 2006-03-23 | 2007-03-06 | Iodate-containing chemical-mechanical polishing compositions and methods |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009530849A JP2009530849A (ja) | 2009-08-27 |
| JP2009530849A5 true JP2009530849A5 (ja) | 2010-04-22 |
| JP5576112B2 JP5576112B2 (ja) | 2014-08-20 |
Family
ID=38269104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009501436A Expired - Fee Related JP5576112B2 (ja) | 2006-03-23 | 2007-03-06 | ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8551202B2 (ja) |
| EP (1) | EP1996663A2 (ja) |
| JP (1) | JP5576112B2 (ja) |
| KR (1) | KR101372208B1 (ja) |
| CN (1) | CN101389723B (ja) |
| IL (1) | IL192551A (ja) |
| MY (1) | MY150410A (ja) |
| SG (1) | SG170755A1 (ja) |
| TW (1) | TWI358449B (ja) |
| WO (1) | WO2007111813A2 (ja) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005120775A1 (en) * | 2004-06-08 | 2005-12-22 | S.O.I. Tec Silicon On Insulator Technologies | Planarization of a heteroepitaxial layer |
| TW200911971A (en) * | 2007-06-08 | 2009-03-16 | Nitta Haas Inc | Polishing composition |
| US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| CN101906270A (zh) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | 一种化学机械抛光液 |
| JP5141792B2 (ja) | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | Ｃｍｐ研磨液及び研磨方法 |
| CN102268225B (zh) * | 2011-05-30 | 2014-03-26 | 上海百兰朵电子科技有限公司 | 永悬浮钻石研磨液 |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| CN103265893B (zh) * | 2013-06-04 | 2015-12-09 | 复旦大学 | 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用 |
| WO2015037311A1 (ja) * | 2013-09-10 | 2015-03-19 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
| CN107491110B (zh) * | 2017-09-20 | 2019-12-13 | 山东大学 | pH稳定且具有酸碱缓冲的氧化铝分散液及其制备方法 |
| TWI761921B (zh) * | 2019-10-30 | 2022-04-21 | 南韓商Ｓｋｃ索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
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| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| TW512170B (en) | 1998-07-24 | 2002-12-01 | Ibm | Aqueous slurry composition and method for polishing a surface using the same |
| US6375693B1 (en) | 1999-05-07 | 2002-04-23 | International Business Machines Corporation | Chemical-mechanical planarization of barriers or liners for copper metallurgy |
| JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| US6355075B1 (en) | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
| JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
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| US20030139047A1 (en) | 2002-01-24 | 2003-07-24 | Thomas Terence M. | Metal polishing slurry having a static etch inhibitor and method of formulation |
| US6821309B2 (en) | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
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| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| TWI244498B (en) * | 2003-11-20 | 2005-12-01 | Eternal Chemical Co Ltd | Chemical mechanical abrasive slurry and method of using the same |
| JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20090215269A1 (en) | 2005-06-06 | 2009-08-27 | Advanced Technology Materials Inc. | Integrated chemical mechanical polishing composition and process for single platen processing |
| JP2007103485A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | 研磨方法及びそれに用いる研磨液 |
-
2006
- 2006-03-23 US US11/387,558 patent/US8551202B2/en not_active Expired - Fee Related
-
2007
- 2007-03-06 KR KR1020087025805A patent/KR101372208B1/ko not_active IP Right Cessation
- 2007-03-06 JP JP2009501436A patent/JP5576112B2/ja not_active Expired - Fee Related
- 2007-03-06 EP EP07752423A patent/EP1996663A2/en not_active Withdrawn
- 2007-03-06 SG SG201102048-4A patent/SG170755A1/en unknown
- 2007-03-06 CN CN2007800066859A patent/CN101389723B/zh not_active Expired - Fee Related
- 2007-03-06 MY MYPI20083710 patent/MY150410A/en unknown
- 2007-03-06 WO PCT/US2007/005722 patent/WO2007111813A2/en active Application Filing
- 2007-03-13 TW TW096108584A patent/TWI358449B/zh not_active IP Right Cessation
-
2008
- 2008-07-01 IL IL192551A patent/IL192551A/en not_active IP Right Cessation
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