JP2005518090A5 - - Google Patents

Download PDF

Info

Publication number
JP2005518090A5
JP2005518090A5 JP2003567998A JP2003567998A JP2005518090A5 JP 2005518090 A5 JP2005518090 A5 JP 2005518090A5 JP 2003567998 A JP2003567998 A JP 2003567998A JP 2003567998 A JP2003567998 A JP 2003567998A JP 2005518090 A5 JP2005518090 A5 JP 2005518090A5
Authority
JP
Japan
Prior art keywords
composition
activator
liquid
particles
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003567998A
Other languages
English (en)
Japanese (ja)
Other versions
JP4824909B2 (ja
JP2005518090A (ja
Filing date
Publication date
Priority claimed from US10/074,757 external-priority patent/US20030162398A1/en
Application filed filed Critical
Publication of JP2005518090A publication Critical patent/JP2005518090A/ja
Publication of JP2005518090A5 publication Critical patent/JP2005518090A5/ja
Application granted granted Critical
Publication of JP4824909B2 publication Critical patent/JP4824909B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2003567998A 2002-02-11 2003-02-11 固体に結合され、ｃｍｐ処方を向上させるために使用されるフリーラジカル形成活性化剤 Expired - Lifetime JP4824909B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/074,757 2002-02-11
US10/074,757 US20030162398A1 (en) 2002-02-11 2002-02-11 Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
PCT/US2003/004144 WO2003068882A1 (en) 2002-02-11 2003-02-11 Free radical-forming activator attached to solid and used to enhance cmp formulations

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009151373A Division JP5109000B2 (ja) 2002-02-11 2009-06-25 固体に結合され、ｃｍｐ処方を向上させるために使用されるフリーラジカル形成活性化剤

Publications (3)

Publication Number Publication Date
JP2005518090A JP2005518090A (ja) 2005-06-16
JP2005518090A5 true JP2005518090A5 (enExample) 2006-03-23
JP4824909B2 JP4824909B2 (ja) 2011-11-30

Family

ID=27732385

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003567998A Expired - Lifetime JP4824909B2 (ja) 2002-02-11 2003-02-11 固体に結合され、ｃｍｐ処方を向上させるために使用されるフリーラジカル形成活性化剤
JP2009151373A Expired - Lifetime JP5109000B2 (ja) 2002-02-11 2009-06-25 固体に結合され、ｃｍｐ処方を向上させるために使用されるフリーラジカル形成活性化剤

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009151373A Expired - Lifetime JP5109000B2 (ja) 2002-02-11 2009-06-25 固体に結合され、ｃｍｐ処方を向上させるために使用されるフリーラジカル形成活性化剤

Country Status (10)

Country Link
US (6) US20030162398A1 (enExample)
EP (2) EP1485440B1 (enExample)
JP (2) JP4824909B2 (enExample)
KR (1) KR100736325B1 (enExample)
CN (1) CN1646650B (enExample)
AT (1) ATE409212T1 (enExample)
AU (1) AU2003219741A1 (enExample)
DE (2) DE03716012T1 (enExample)
TW (1) TWI278499B (enExample)
WO (1) WO2003068882A1 (enExample)

Families Citing this family (164)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
AU2002359356A1 (en) * 2001-11-16 2003-06-10 Ferro Corporation Particles for use in cmp slurries and method for producing them
US20060032836A1 (en) * 2001-11-16 2006-02-16 Ferro Corporation Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
KR100560223B1 (ko) * 2002-06-05 2006-03-10 삼성코닝 주식회사 고정도 연마용 금속 산화물 분말 및 이의 제조방법
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
WO2004072332A1 (ja) * 2003-02-12 2004-08-26 Ebara Corporation 研磨液、研磨方法及び研磨装置
JP4075691B2 (ja) * 2003-05-27 2008-04-16 セイコーエプソン株式会社 電気光学装置の製造方法並びに基板装置の製造方法
WO2005014753A1 (en) * 2003-07-09 2005-02-17 Dynea Chemicals Oy Non-polymeric organic particles for chemical mechanical planarization
IL157681A0 (en) * 2003-09-01 2004-03-28 J G Systems Inc Improved abrasives for chemical-mechanical polishing applications
JP4336550B2 (ja) * 2003-09-09 2009-09-30 花王株式会社 磁気ディスク用研磨液キット
US7344988B2 (en) * 2003-10-27 2008-03-18 Dupont Air Products Nanomaterials Llc Alumina abrasive for chemical mechanical polishing
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
US7288021B2 (en) * 2004-01-07 2007-10-30 Cabot Microelectronics Corporation Chemical-mechanical polishing of metals in an oxidized form
JP2005236275A (ja) * 2004-01-23 2005-09-02 Jsr Corp 化学機械研磨用水系分散体および化学機械研磨方法
KR20050079313A (ko) * 2004-02-05 2005-08-10 매그나칩 반도체 유한회사 구리 연마용 슬러리 및 이를 이용한 연마 방법
US8557343B2 (en) 2004-03-19 2013-10-15 The Boeing Company Activation method
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US20090120012A1 (en) * 2004-06-18 2009-05-14 Dongjin Semichem Co., Ltd. Method for preparing additive for chemical mechanical polishing slurry composition
KR100850877B1 (ko) * 2004-06-18 2008-08-07 주식회사 동진쎄미켐 철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물
KR101072271B1 (ko) * 2005-03-14 2011-10-11 주식회사 동진쎄미켐 화학 기계적 연마 슬러리 조성물용 산화제 및 그 제조방법
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
KR100648264B1 (ko) 2004-08-17 2006-11-23 삼성전자주식회사 루테늄을 위한 화학적기계적 연마 슬러리, 상기 슬러리를이용한 루테늄에 대한 화학적기계적 연마 방법, 그리고상기 화학적기계적 연마 방법을 이용한 루테늄 전극 형성방법
KR20060016498A (ko) * 2004-08-18 2006-02-22 삼성전자주식회사 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법
US20060038293A1 (en) * 2004-08-23 2006-02-23 Rueger Neal R Inter-metal dielectric fill
US20080105651A1 (en) * 2004-09-14 2008-05-08 Katsumi Mabuchi Polishing Slurry for Cmp
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same
JP4836441B2 (ja) * 2004-11-30 2011-12-14 花王株式会社 研磨液組成物
KR100497413B1 (ko) * 2004-11-26 2005-06-23 에이스하이텍 주식회사 텅스텐-화학적 기계적 연마에 유용한 슬러리 및 그 제조방법
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
FR2880186B1 (fr) * 2004-12-24 2007-07-20 Soitec Silicon On Insulator Procede de traitement d'une surface de plaquette
US7919391B2 (en) * 2004-12-24 2011-04-05 S.O.I.Tec Silicon On Insulator Technologies Methods for preparing a bonding surface of a semiconductor wafer
KR20060077353A (ko) * 2004-12-30 2006-07-05 삼성전자주식회사 슬러리 조성물, 이를 이용한 가공물의 연마방법 및 반도체장치의 콘택 형성방법
ATE460466T1 (de) 2005-01-21 2010-03-15 Commw Scient Ind Res Org Aktivierungsverfahren mithilfe eines modifikationsmittels
US7476620B2 (en) * 2005-03-25 2009-01-13 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
TWI421931B (zh) * 2005-04-28 2014-01-01 Advanced Tech Materials 用於銅薄膜平坦化製程中之化學機械研磨組成物之鈍化方法
US20060278614A1 (en) * 2005-06-08 2006-12-14 Cabot Microelectronics Corporation Polishing composition and method for defect improvement by reduced particle stiction on copper surface
KR101124569B1 (ko) * 2005-06-09 2012-03-15 삼성전자주식회사 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법
CA2618883A1 (en) * 2005-08-19 2007-03-01 Nanosys, Inc. Electronic grade metal nanostructures
CN102863943B (zh) 2005-08-30 2015-03-25 花王株式会社 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
US7897061B2 (en) 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US7732393B2 (en) * 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
KR100816651B1 (ko) * 2006-03-31 2008-03-27 테크노세미켐 주식회사 제올라이트를 함유하는 구리 화학 기계적 연마 조성물
US7776228B2 (en) * 2006-04-11 2010-08-17 Ebara Corporation Catalyst-aided chemical processing method
KR100832993B1 (ko) * 2006-04-14 2008-05-27 주식회사 엘지화학 Ｃｍｐ 슬러리용 보조제
US8163049B2 (en) * 2006-04-18 2012-04-24 Dupont Air Products Nanomaterials Llc Fluoride-modified silica sols for chemical mechanical planarization
EP2031968B1 (en) 2006-04-21 2017-11-22 Wake Forest University Health Sciences Structurally modified acellular tissue engineering scaffolds and methods of production
US20080283502A1 (en) * 2006-05-26 2008-11-20 Kevin Moeggenborg Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US7294576B1 (en) 2006-06-29 2007-11-13 Cabot Microelectronics Corporation Tunable selectivity slurries in CMP applications
JP5426373B2 (ja) * 2006-07-12 2014-02-26 キャボット マイクロエレクトロニクス コーポレイション 金属含有基材のためのｃｍｐ法
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
EP1894900A3 (en) * 2006-08-28 2010-02-24 Osaka University Catalyst-aided chemical processing method and apparatus
JP5448824B2 (ja) * 2006-10-16 2014-03-19 キャボット マイクロエレクトロニクス コーポレイション ガラス研磨組成物および方法
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
JP5072091B2 (ja) * 2006-12-08 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20080149591A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US7691287B2 (en) * 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
DE102007008279A1 (de) * 2007-02-20 2008-08-21 Evonik Degussa Gmbh Ceroxid und Schichtsilikat enthaltende Dispersion
DE102007008232A1 (de) * 2007-02-20 2008-08-21 Evonik Degussa Gmbh Dispersion enthaltend Ceroxid und kolloidales Siliciumdioxid
JP4372173B2 (ja) * 2007-03-16 2009-11-25 株式会社東芝 化学的機械的研磨方法および半導体装置の製造方法
US8541310B2 (en) * 2007-05-04 2013-09-24 Cabot Microelectronics Corporation CMP compositions containing a soluble peroxometalate complex and methods of use thereof
JP2008307631A (ja) * 2007-06-13 2008-12-25 Asahi Glass Co Ltd ガラス基板研磨方法
JP2009050920A (ja) * 2007-08-23 2009-03-12 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
US20090061630A1 (en) * 2007-08-30 2009-03-05 Dupont Air Products Nanomaterials Llc Method for Chemical Mechanical Planarization of A Metal-containing Substrate
JP2010538167A (ja) * 2007-09-06 2010-12-09 イー．ケー．シー．テクノロジー．インコーポレーテッド 銅表面を処理するための組成物およびその方法
US20090124173A1 (en) * 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
DE102007062572A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
DE102008002321A1 (de) * 2008-06-10 2009-12-17 Evonik Degussa Gmbh Ceroxid und partikuläres Additiv enthaltende Dispersion
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
US20100096360A1 (en) * 2008-10-20 2010-04-22 Applied Materials, Inc. Compositions and methods for barrier layer polishing
US8506831B2 (en) * 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
US8247328B2 (en) * 2009-05-04 2012-08-21 Cabot Microelectronics Corporation Polishing silicon carbide
KR100928456B1 (ko) 2009-06-01 2009-11-25 주식회사 동진쎄미켐 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법
US8367594B2 (en) * 2009-06-24 2013-02-05 Lam Research Corporation Damage free, high-efficiency, particle removal cleaner comprising polyvinyl alcohol particles
US8530100B2 (en) * 2009-12-10 2013-09-10 Daimler Ag Method of chemical treatment of fuel cell plate surface to modify wettability of flow field channels
JP5088452B2 (ja) * 2009-12-10 2012-12-05 日立化成工業株式会社 Ｃｍｐ研磨液、基板の研磨方法及び電子部品
JP2011142284A (ja) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
KR101396232B1 (ko) * 2010-02-05 2014-05-19 한양대학교 산학협력단 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법
US8858819B2 (en) * 2010-02-15 2014-10-14 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a tungsten-containing substrate
US20130203948A1 (en) * 2010-10-19 2013-08-08 Basell Poliolefine Italia S.R.L. Process for the preparation of high purity propylene polymers
CN102560368A (zh) * 2010-12-28 2012-07-11 鸿富锦精密工业（深圳）有限公司 壳体及其制造方法
US8242011B2 (en) * 2011-01-11 2012-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming metal pillar
US8720770B2 (en) 2011-03-01 2014-05-13 The Golden Box, Inc. Box partition set
CN102181232B (zh) * 2011-03-17 2013-12-11 清华大学 Ulsi多层铜布线铜的低下压力化学机械抛光的组合物
US9598775B2 (en) * 2011-06-13 2017-03-21 Praxair S.T. Technology, Inc. Multilayer overlay system for thermal and corrosion protection of superalloy substrates
US8623766B2 (en) * 2011-09-20 2014-01-07 Cabot Microelectronics Corporation Composition and method for polishing aluminum semiconductor substrates
TWI463002B (zh) * 2011-12-01 2014-12-01 Uwiz Technology Co Ltd 研漿組成物
SG11201407168PA (en) * 2012-05-07 2014-11-27 Basf Se Process for manufacture of semiconductor devices
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN102910725A (zh) * 2012-11-20 2013-02-06 哈尔滨工业大学 改进的芬顿、类芬顿体系去除水中有机污染物的方法
US20140273458A1 (en) * 2013-03-12 2014-09-18 Air Products And Chemicals, Inc. Chemical Mechanical Planarization for Tungsten-Containing Substrates
US20140315386A1 (en) * 2013-04-19 2014-10-23 Air Products And Chemicals, Inc. Metal Compound Coated Colloidal Particles Process for Making and Use Therefor
JP6534507B2 (ja) * 2013-07-03 2019-06-26 Hoya株式会社 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
JP6285775B2 (ja) * 2014-03-31 2018-02-28 日揮触媒化成株式会社 研磨用金属担持金属酸化物粒子および研磨剤
WO2015200663A1 (en) 2014-06-25 2015-12-30 Cabot Microelectronics Corporation Colloidal silica chemical-mechanical polishing composition
JP6612789B2 (ja) 2014-06-25 2019-11-27 キャボット マイクロエレクトロニクス コーポレイション タングステンの化学機械研磨組成物
US9556363B2 (en) 2014-06-25 2017-01-31 Cabot Microelectronics Corporation Copper barrier chemical-mechanical polishing composition
CN104131292B (zh) * 2014-07-01 2015-10-28 蚌埠市高华电子有限公司 一种清洗方便防腐蚀的复合抛光液及其制备方法
DE102014112817A1 (de) * 2014-09-05 2016-03-10 Osram Opto Semiconductors Gmbh Verfahren zum chemisch-mechanischen Polieren eines Substrats
CN104371649B (zh) * 2014-09-28 2017-05-10 顾泉 一种化学机械研磨组合物
US20160122590A1 (en) * 2014-10-31 2016-05-05 Air Products And Chemicals, Inc. Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
CN104403571B (zh) * 2014-11-20 2016-08-10 石狮市星光化工科技有限公司 一种通用的新型粉状光饰光亮剂制作方法
CN104513627B (zh) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 一种集成电路铜cmp组合物及其制备方法
JP6437303B2 (ja) * 2014-12-25 2018-12-12 花王株式会社 ガラスハードディスク基板用研磨液組成物
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US10160884B2 (en) 2015-03-23 2018-12-25 Versum Materials Us, Llc Metal compound chemically anchored colloidal particles and methods of production and use thereof
US10077381B2 (en) * 2015-07-20 2018-09-18 Kctech Co., Ltd. Polishing slurry composition
KR101834418B1 (ko) * 2015-10-02 2018-03-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
US9631122B1 (en) 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9771496B2 (en) 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
KR102543606B1 (ko) * 2015-12-29 2023-06-19 솔브레인 주식회사 텅스텐 연마용 슬러리 조성물 및 이를 이용한 연마방법
US11098224B2 (en) 2016-11-23 2021-08-24 Hoya Corporation Method for polishing glass substrate, method for manufacturing glass substrate, method for manufacturing magnetic-disk glass substrate, method for manufacturing magnetic disk, polishing liquid, and method for reducing cerium oxide
US12473457B2 (en) 2017-09-15 2025-11-18 Cmc Materials Llc Composition for tungsten CMP
WO2019064524A1 (ja) * 2017-09-29 2019-04-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
US10002771B1 (en) 2017-10-10 2018-06-19 Applied Materials, Inc. Methods for chemical mechanical polishing (CMP) processing with ozone
CN108161581A (zh) * 2017-12-25 2018-06-15 大连三生科技发展有限公司 一种牙种植体表面抛光的方法
WO2019151145A1 (ja) * 2018-02-05 2019-08-08 Jsr株式会社 化学機械研磨用組成物及び研磨方法
JP6784798B2 (ja) * 2018-06-01 2020-11-11 ケーシーテック カンパニー リミテッド 研磨用スラリー組成物
US11643599B2 (en) 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
JP7267795B2 (ja) * 2019-03-22 2023-05-02 株式会社フジミインコーポレーテッド 単体シリコンの研磨速度向上剤
EP3947580A4 (en) * 2019-03-25 2022-12-14 CMC Materials, Inc. CMP SPRAY PARTICULATE DISPERSION ENHANCING ADDITIVES
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
CN110437744A (zh) * 2019-08-19 2019-11-12 福建华清电子材料科技有限公司 一种用于氮化铝基片抛光的抛光液的制备方法
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
CN110900322B (zh) * 2019-12-23 2024-04-09 广东工业大学 一种电芬顿集群磁流变复合研磨抛光装置及方法
WO2021141741A1 (en) 2020-01-07 2021-07-15 Cmc Materials, Inc. Derivatized polyamino acids
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
TW202138505A (zh) 2020-03-31 2021-10-16 美商富士軟片電子材料美國股份有限公司 研磨組成物及其使用方法
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
KR102237346B1 (ko) * 2020-08-24 2021-04-07 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
CN111975627B (zh) * 2020-08-27 2022-06-28 中国电子科技集团公司第十一研究所 非规则碲锌镉晶片的研磨方法
CN114433159A (zh) * 2020-10-31 2022-05-06 华为技术有限公司 用于化学机械平坦化的复合催化剂及其制备方法和抛光液
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
CN114559302B (zh) * 2022-03-01 2023-04-11 广东工业大学 一种抛光液、磷化铟抛光装置及方法
TWI873734B (zh) * 2022-07-29 2025-02-21 美商聖高拜陶器塑膠公司 用於進行材料移除操作之組成物及方法
CN115960540A (zh) * 2022-12-23 2023-04-14 昂士特科技(深圳)有限公司 具有改进颗粒的化学机械抛光组合物
CN117487515B (zh) * 2023-12-27 2024-05-03 甬江实验室 具有催化活性的复合抛光磨粒及其制备方法
US12454768B1 (en) 2024-11-08 2025-10-28 Wolfspeed, Inc. Hybrid seed structure for crystal growth system
CN119608168B (zh) * 2024-12-09 2025-11-18 中国石油化工股份有限公司 一种镍基催化剂及其制备方法和应用

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007878A (en) 1956-11-01 1961-11-07 Du Pont Aquasols of positively-charged coated silica particles and their production
US3139406A (en) * 1960-10-12 1964-06-30 Nalco Chemical Co Method of producing hydrous metal oxide sols
US3252917A (en) 1962-08-27 1966-05-24 Nalco Chemical Co Method of producing alumina-coated silica in sol form
BE657099A (enExample) 1963-12-30
US4252671A (en) * 1979-12-04 1981-02-24 Xerox Corporation Preparation of colloidal iron dispersions by the polymer-catalyzed decomposition of iron carbonyl and iron organocarbonyl compounds
US4478742A (en) * 1981-09-17 1984-10-23 Nalco Chemical Company Preparation of a ferric acetate coated silica sol by selective anion exchange
US4478242A (en) * 1983-08-25 1984-10-23 Liqui-Box Corporation Finger-actuated push-pull slideable dispensing valve
US4595113A (en) * 1983-10-04 1986-06-17 Firma Stangl & Vogt Gmbh & Co. Kg Device for the storage and/or carriage of sensitive materials
JPS61176192A (ja) 1985-01-31 1986-08-07 株式会社日立製作所 銅と樹脂との接着方法
US5352517A (en) 1986-03-24 1994-10-04 Ensci, Inc. Iron oxide coated substrates
FR2604443A1 (fr) 1986-09-26 1988-04-01 Rhone Poulenc Chimie Composition de polissage a base de cerium destinee au polissage des verres organiques
US4841680A (en) 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
JPH01193166A (ja) 1988-01-28 1989-08-03 Showa Denko Kk 半導体ウェハ鏡面研磨用パッド
US4910155A (en) 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
DE3840194A1 (de) 1988-11-29 1990-05-31 Bayer Ag Kupfer-traegerkatalysator, verfahren zu seiner herstellung und verfahren zur herstellung von n-alkylierten aromatischen aminen unter einsatz dieses kupfer-katalysators
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4959113C1 (en) 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5128081A (en) 1989-12-05 1992-07-07 Arch Development Corporation Method of making nanocrystalline alpha alumina
US5020283A (en) 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
EP0462094B1 (en) * 1990-06-05 1996-01-03 Huntsman Specialty Chemicals Corporation Process for dehydrogenation of paraffin
US5234880A (en) * 1990-10-11 1993-08-10 Paxon Polymer Company, L.P. Polyolefin catalysts and method of preparing an olefin polymer
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US5345490A (en) 1991-06-28 1994-09-06 General Electric Company Method and apparatus for converting computed tomography (CT) data into finite element models
US5197999A (en) 1991-09-30 1993-03-30 National Semiconductor Corporation Polishing pad for planarization
US5302356A (en) * 1992-03-04 1994-04-12 Arizona Board Of Reagents Acting On Behalf Of University Of Arizona Ultrapure water treatment system
US5264010A (en) 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5445996A (en) 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5626715A (en) 1993-02-05 1997-05-06 Lsi Logic Corporation Methods of polishing semiconductor substrates
US5427423A (en) * 1993-09-27 1995-06-27 E. J. Brooks Company Padlock security seal with internal bar code
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
IL115053A (en) 1994-09-01 1999-11-30 Cabot Corp Ceramic slip compositions and method for making the same
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
WO1996038262A1 (en) 1995-06-01 1996-12-05 Rodel, Inc. Compositions for polishing silicon wafers and methods
DE19530339A1 (de) * 1995-08-18 1997-02-20 Degussa Pyrogene Kieselsäure, Verfahren zu ihrer Herstellung und Verwendung
FR2738007B1 (fr) * 1995-08-24 1999-03-05 Nippon Denso Co Procede et dispositif pour produire une eau minerale
US5785868A (en) * 1995-09-11 1998-07-28 Board Of Regents, Univ. Of Texas System Method for selective separation of products at hydrothermal conditions
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
DE69729513T2 (de) * 1996-02-28 2005-05-25 Hoya Corp. Filtervorrichtung mit photokatalysator
FR2745260B1 (fr) * 1996-02-28 1998-04-03 Airbus Ind Systeme et procede de conversion rapide et reversible d'un avion entre une configuration passagers et une configuration fret
US5948697A (en) 1996-05-23 1999-09-07 Lsi Logic Corporation Catalytic acceleration and electrical bias control of CMP processing
US5863838A (en) 1996-07-22 1999-01-26 Motorola, Inc. Method for chemically-mechanically polishing a metal layer
WO1998004646A1 (en) 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5783489A (en) 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6039891A (en) 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5773364A (en) 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
JPH10128667A (ja) 1996-10-30 1998-05-19 Chiyouri Kk 研磨方法及び装置及びその研磨材
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
DE19650500A1 (de) 1996-12-05 1998-06-10 Degussa Dotierte, pyrogen hergestellte Oxide
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5735963A (en) * 1996-12-17 1998-04-07 Lucent Technologies Inc. Method of polishing
JPH10204416A (ja) * 1997-01-21 1998-08-04 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
US5891205A (en) 1997-08-14 1999-04-06 Ekc Technology, Inc. Chemical mechanical polishing composition
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US5849051A (en) 1997-11-12 1998-12-15 Minnesota Mining And Manufacturing Company Abrasive foam article and method of making same
JPH11151321A (ja) 1997-11-20 1999-06-08 Bridgestone Sports Co Ltd マルチピースソリッドゴルフボール
JP2002511650A (ja) 1998-04-10 2002-04-16 フェロー コーポレイション 化学的−機械的金属表面研磨用スラリ
US6077601A (en) * 1998-05-01 2000-06-20 3M Innovative Properties Company Coated abrasive article
CA2330320A1 (en) * 1998-05-14 1999-11-18 U.S. Environmental Protection Agency Contaminant adsorption and oxidation via the fenton reaction
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US6435947B2 (en) * 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
JP4090589B2 (ja) * 1998-09-01 2008-05-28 株式会社フジミインコーポレーテッド 研磨用組成物
US6439709B1 (en) 1998-09-04 2002-08-27 Trident International, Inc. Method for reducing cavitation in impulse ink jet printing device
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
JP3986181B2 (ja) * 1998-10-19 2007-10-03 三井化学株式会社 タングステン含有部材研磨用スラリー及び研磨方法
US6140239A (en) * 1998-11-25 2000-10-31 Advanced Micro Devices, Inc. Chemically removable Cu CMP slurry abrasive
US6077337A (en) * 1998-12-01 2000-06-20 Intel Corporation Chemical-mechanical polishing slurry
KR100447551B1 (ko) 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
TWI267549B (en) 1999-03-18 2006-12-01 Toshiba Corp Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded wiring
DE19919635A1 (de) 1999-04-30 2000-11-23 Degussa Silicium-Aluminium-Mischoxid
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6251150B1 (en) * 1999-05-27 2001-06-26 Ekc Technology, Inc. Slurry composition and method of chemical mechanical polishing using same
US6376645B1 (en) * 1999-07-09 2002-04-23 The Dow Chemical Company Complexing agent-modified hexacyanometallate hexanitrometallate catalysts
US6235693B1 (en) 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
CN1107097C (zh) 1999-07-28 2003-04-30 长兴化学工业股份有限公司 化学机械研磨组合物及方法
TWI254070B (en) 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
WO2001030928A1 (en) 1999-10-28 2001-05-03 Cabot Microelectronics Corporation Chemical mechanical polishing compositions and systems
JP2001133053A (ja) * 1999-11-01 2001-05-18 Toyota Autom Loom Works Ltd 空調装置
US6503418B2 (en) 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6638143B2 (en) * 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6242351B1 (en) * 1999-12-27 2001-06-05 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers
US6299795B1 (en) * 2000-01-18 2001-10-09 Praxair S.T. Technology, Inc. Polishing slurry
US6332831B1 (en) * 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
IL151862A0 (en) * 2000-04-07 2003-04-10 Cabot Microelectronics Corp Integrated chemical-mechanical polishing
DE10024874A1 (de) * 2000-05-16 2001-11-29 Siemens Ag Polierflüssigkeit und Verfahren zur Strukturierung von Metallen und Metalloxiden
JP3632071B2 (ja) * 2000-07-04 2005-03-23 国立大学法人東北大学 硫化物触媒を用いた一酸化炭素の水素化法
JP3993369B2 (ja) * 2000-07-14 2007-10-17 株式会社東芝 半導体装置の製造方法
JP2002043258A (ja) * 2000-07-24 2002-02-08 Asahi Kasei Corp 金属膜用研磨組成物
US6498131B1 (en) 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
US6541384B1 (en) * 2000-09-08 2003-04-01 Applied Materials, Inc. Method of initiating cooper CMP process
US6461227B1 (en) * 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US6702954B1 (en) 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
US6383065B1 (en) * 2001-01-22 2002-05-07 Cabot Microelectronics Corporation Catalytic reactive pad for metal CMP
US6899804B2 (en) * 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
JP4083397B2 (ja) * 2001-06-18 2008-04-30 株式会社ルネサステクノロジ 半導体集積回路装置
JP4954398B2 (ja) * 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
IL157681A0 (en) * 2003-09-01 2004-03-28 J G Systems Inc Improved abrasives for chemical-mechanical polishing applications
WO2005066325A2 (en) * 2003-12-31 2005-07-21 Ekc Technology, Inc. Cleaner compositions containing free radical quenchers
US7476620B2 (en) * 2005-03-25 2009-01-13 Dupont Air Products Nanomaterials Llc Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers

Similar Documents

Publication Publication Date Title
JP2005518090A5 (enExample)
KR100302671B1 (ko) 화학기계적연마용조성물및화학기계적연마방법
JP5468778B2 (ja) 制御された電気化学研磨方法
TWI248970B (en) Tantalum barrier removal solution
JP5153623B2 (ja) 研磨組成物の製造方法
Prasad et al. Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor
US20070093182A1 (en) Polishing fluids and methods for CMP
CN102304327A (zh) 一种基于金属Co的抛光工艺的抛光液
TWI311150B (enExample)
JP2010509755A5 (enExample)
CN101180379A (zh) 用于含有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
JP2009539740A5 (enExample)
CN104513627B (zh) 一种集成电路铜cmp组合物及其制备方法
US20160122590A1 (en) Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
JP2008501240A (ja) 電気化学−機械研磨組成物及び同組成物の使用方法
CN103194148A (zh) 化学机械抛光水性组合物及其用途
WO2007108215A1 (ja) 研磨用組成物
CN104400624B (zh) 固结磨料化学机械抛光铜的加工方法
Dong et al. The role of formamidine acetate as a complexing agent in the chemical mechanical polishing process of Ta-based barrier layers for through-silicon vias wafers
CN101935596A (zh) 硫系化合物相变材料抛光后清洗液
Chen et al. Achieving atomic surface of Ti-6Al-4V alloys in chemical mechanical planarization using phytic acid as corrosion inhibitor, chelator and pH adjuster
CN117328068B (zh) 一种减少凹陷的钨插塞化学机械抛光液及其应用
CN115678439B (zh) 一种抑制铜钴电偶腐蚀的碱性抛光液及其制备方法
Nair et al. Chemical mechanical planarization of germanium using oxone® based silica slurries
JP2001127018A (ja) 金属研磨方法