JP2020164877A5 - - Google Patents

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Publication number
JP2020164877A5
JP2020164877A5 JP2020107244A JP2020107244A JP2020164877A5 JP 2020164877 A5 JP2020164877 A5 JP 2020164877A5 JP 2020107244 A JP2020107244 A JP 2020107244A JP 2020107244 A JP2020107244 A JP 2020107244A JP 2020164877 A5 JP2020164877 A5 JP 2020164877A5
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Japan
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formula
colloidal
carbon atoms
amino acid
particles
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JP2020107244A
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JP2020164877A (ja
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Priority claimed from US16/101,869 external-priority patent/US11401441B2/en
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JP2020107244A 2017-08-17 2020-06-22 銅及びシリカ貫通電極(tsv)用途のための化学機械平坦化(cmp)組成物並びにその方法 Withdrawn JP2020164877A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762546914P 2017-08-17 2017-08-17
US62/546,914 2017-08-17
US16/101,869 US11401441B2 (en) 2017-08-17 2018-08-13 Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US16/101,869 2018-08-13

Related Parent Applications (1)

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JP2018153625A Division JP6995716B2 (ja) 2017-08-17 2018-08-17 銅及びシリカ貫通電極(tsv)用途のための化学機械平坦化(cmp)組成物並びにその方法

Publications (2)

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JP2020164877A JP2020164877A (ja) 2020-10-08
JP2020164877A5 true JP2020164877A5 (enExample) 2021-09-30

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JP2018153625A Active JP6995716B2 (ja) 2017-08-17 2018-08-17 銅及びシリカ貫通電極(tsv)用途のための化学機械平坦化(cmp)組成物並びにその方法
JP2020107244A Withdrawn JP2020164877A (ja) 2017-08-17 2020-06-22 銅及びシリカ貫通電極(tsv)用途のための化学機械平坦化(cmp)組成物並びにその方法

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JP2018153625A Active JP6995716B2 (ja) 2017-08-17 2018-08-17 銅及びシリカ貫通電極(tsv)用途のための化学機械平坦化(cmp)組成物並びにその方法

Country Status (8)

Country Link
US (1) US11401441B2 (enExample)
EP (1) EP3444309B1 (enExample)
JP (2) JP6995716B2 (enExample)
KR (2) KR102323303B1 (enExample)
CN (1) CN109401631A (enExample)
IL (1) IL261161B2 (enExample)
SG (1) SG10201806977YA (enExample)
TW (2) TW202003732A (enExample)

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WO2022093688A1 (en) * 2020-10-29 2022-05-05 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using the same
CN116745375A (zh) * 2020-12-14 2023-09-12 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
JP7596928B2 (ja) * 2021-05-24 2024-12-10 信越化学工業株式会社 研磨用組成物
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
KR102867479B1 (ko) * 2022-09-06 2025-10-14 한국전자기술연구원 선택적 연마특성이 향상된 실리콘관통전극의 구리 연마용 슬러리 조성물
WO2025111136A1 (en) 2023-11-21 2025-05-30 Versum Materials Us, Llc Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025111138A1 (en) 2023-11-22 2025-05-30 Versum Materials Us, Llc Biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025122389A1 (en) 2023-12-07 2025-06-12 Versum Materials Us, Llc Chemical additives for chemical mechanical planarization (cmp) polishing compositions
WO2025175199A1 (en) 2024-02-16 2025-08-21 Versum Materials Us, Llc Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions

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