KR102323303B1 - 구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법 - Google Patents

구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법 Download PDF

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KR102323303B1
KR102323303B1 KR1020180096362A KR20180096362A KR102323303B1 KR 102323303 B1 KR102323303 B1 KR 102323303B1 KR 1020180096362 A KR1020180096362 A KR 1020180096362A KR 20180096362 A KR20180096362 A KR 20180096362A KR 102323303 B1 KR102323303 B1 KR 102323303B1
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weight
chemical mechanical
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mechanical polishing
alanine
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KR20190019875A (ko
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지아오보 시
로라 엠. 마츠
크리스 케-예우안 리
밍-시 짜이
파오 치아 판
차드 창-체 시에
룽-제 양
블레이크 제이. 루이
마크 레오나드 오닐
아그네스 데렉스케이-코박스
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버슘머트리얼즈 유에스, 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020180096362A 2017-08-17 2018-08-17 구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법 Active KR102323303B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762546914P 2017-08-17 2017-08-17
US62/546,914 2017-08-17
US16/101,869 US11401441B2 (en) 2017-08-17 2018-08-13 Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US16/101,869 2018-08-13

Related Child Applications (1)

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KR1020200141157A Division KR20200125564A (ko) 2017-08-17 2020-10-28 구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법

Publications (2)

Publication Number Publication Date
KR20190019875A KR20190019875A (ko) 2019-02-27
KR102323303B1 true KR102323303B1 (ko) 2021-11-08

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KR1020180096362A Active KR102323303B1 (ko) 2017-08-17 2018-08-17 구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법
KR1020200141157A Withdrawn KR20200125564A (ko) 2017-08-17 2020-10-28 구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법

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US (1) US11401441B2 (enExample)
EP (1) EP3444309B1 (enExample)
JP (2) JP6995716B2 (enExample)
KR (2) KR102323303B1 (enExample)
CN (1) CN109401631A (enExample)
IL (1) IL261161B2 (enExample)
SG (1) SG10201806977YA (enExample)
TW (2) TW202003732A (enExample)

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WO2022026369A1 (en) * 2020-07-29 2022-02-03 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper and through-silicon via (tsv) chemical-mechanical planarization (cmp)
CN116438267A (zh) * 2020-10-29 2023-07-14 富士胶片电子材料美国有限公司 研磨组成物及其使用方法
JP2024501478A (ja) * 2020-12-14 2024-01-12 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅及びシリコン貫通電極（ｔｓｖ）のための化学機械平坦化（ｃｍｐ）
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
JP7596928B2 (ja) * 2021-05-24 2024-12-10 信越化学工業株式会社 研磨用組成物
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
KR102867479B1 (ko) * 2022-09-06 2025-10-14 한국전자기술연구원 선택적 연마특성이 향상된 실리콘관통전극의 구리 연마용 슬러리 조성물
WO2025111136A1 (en) 2023-11-21 2025-05-30 Versum Materials Us, Llc Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
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WO2025122389A1 (en) 2023-12-07 2025-06-12 Versum Materials Us, Llc Chemical additives for chemical mechanical planarization (cmp) polishing compositions
WO2025175199A1 (en) 2024-02-16 2025-08-21 Versum Materials Us, Llc Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions

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Also Published As

Publication number Publication date
EP3444309A1 (en) 2019-02-20
TWI678402B (zh) 2019-12-01
JP6995716B2 (ja) 2022-01-17
IL261161B2 (en) 2024-03-01
SG10201806977YA (en) 2019-03-28
EP3444309B1 (en) 2025-07-16
JP2019052295A (ja) 2019-04-04
KR20190019875A (ko) 2019-02-27
TW201920533A (zh) 2019-06-01
US11401441B2 (en) 2022-08-02
IL261161A (en) 2019-01-31
CN109401631A (zh) 2019-03-01
JP2020164877A (ja) 2020-10-08
TW202003732A (zh) 2020-01-16
IL261161B1 (en) 2023-11-01
KR20200125564A (ko) 2020-11-04
US20190055430A1 (en) 2019-02-21

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