IL261161B2 - Chemical mechanical planarization preparation and methods therefor for copper applications and using silica - Google Patents

Chemical mechanical planarization preparation and methods therefor for copper applications and using silica

Info

Publication number
IL261161B2
IL261161B2 IL261161A IL26116118A IL261161B2 IL 261161 B2 IL261161 B2 IL 261161B2 IL 261161 A IL261161 A IL 261161A IL 26116118 A IL26116118 A IL 26116118A IL 261161 B2 IL261161 B2 IL 261161B2
Authority
IL
Israel
Prior art keywords
alanine
group
chemical mechanical
colloidal silica
mechanical polishing
Prior art date
Application number
IL261161A
Other languages
English (en)
Hebrew (he)
Other versions
IL261161B1 (en
IL261161A (en
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of IL261161A publication Critical patent/IL261161A/en
Publication of IL261161B1 publication Critical patent/IL261161B1/en
Publication of IL261161B2 publication Critical patent/IL261161B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL261161A 2017-08-17 2018-08-15 Chemical mechanical planarization preparation and methods therefor for copper applications and using silica IL261161B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762546914P 2017-08-17 2017-08-17
US16/101,869 US11401441B2 (en) 2017-08-17 2018-08-13 Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

Publications (3)

Publication Number Publication Date
IL261161A IL261161A (en) 2019-01-31
IL261161B1 IL261161B1 (en) 2023-11-01
IL261161B2 true IL261161B2 (en) 2024-03-01

Family

ID=63311834

Family Applications (1)

Application Number Title Priority Date Filing Date
IL261161A IL261161B2 (en) 2017-08-17 2018-08-15 Chemical mechanical planarization preparation and methods therefor for copper applications and using silica

Country Status (8)

Country Link
US (1) US11401441B2 (enExample)
EP (1) EP3444309B1 (enExample)
JP (2) JP6995716B2 (enExample)
KR (2) KR102323303B1 (enExample)
CN (1) CN109401631A (enExample)
IL (1) IL261161B2 (enExample)
SG (1) SG10201806977YA (enExample)
TW (2) TW202003732A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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US20200277514A1 (en) * 2019-02-28 2020-09-03 Versum Materials Us, Llc Chemical Mechanical Polishing For Copper And Through Silicon Via Applications
US20220332978A1 (en) * 2019-09-30 2022-10-20 Versum Materials Us, Llc Low Dishing Copper Chemical Mechanical Planarization
EP4189026A4 (en) * 2020-07-29 2024-07-31 Versum Materials US, LLC BUFFER-IN-BOTTLE (PIB) TECHNOLOGY FOR CHEMICAL-MECHANICAL PLANARIZATION (CMP) OF COPPER AND THROUGH-SILICON VIA (TSV)
WO2022093688A1 (en) * 2020-10-29 2022-05-05 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using the same
CN116745375A (zh) * 2020-12-14 2023-09-12 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
JP7596928B2 (ja) * 2021-05-24 2024-12-10 信越化学工業株式会社 研磨用組成物
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
KR102867479B1 (ko) * 2022-09-06 2025-10-14 한국전자기술연구원 선택적 연마특성이 향상된 실리콘관통전극의 구리 연마용 슬러리 조성물
WO2025111136A1 (en) 2023-11-21 2025-05-30 Versum Materials Us, Llc Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025111138A1 (en) 2023-11-22 2025-05-30 Versum Materials Us, Llc Biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025122389A1 (en) 2023-12-07 2025-06-12 Versum Materials Us, Llc Chemical additives for chemical mechanical planarization (cmp) polishing compositions
WO2025175199A1 (en) 2024-02-16 2025-08-21 Versum Materials Us, Llc Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions

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EP3088486A1 (en) * 2015-04-27 2016-11-02 Air Products And Chemicals, Inc. Low dishing copper chemical mechanical planarization

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EP3088486A1 (en) * 2015-04-27 2016-11-02 Air Products And Chemicals, Inc. Low dishing copper chemical mechanical planarization

Also Published As

Publication number Publication date
EP3444309A1 (en) 2019-02-20
EP3444309B1 (en) 2025-07-16
KR20200125564A (ko) 2020-11-04
JP6995716B2 (ja) 2022-01-17
US20190055430A1 (en) 2019-02-21
SG10201806977YA (en) 2019-03-28
TWI678402B (zh) 2019-12-01
KR20190019875A (ko) 2019-02-27
TW201920533A (zh) 2019-06-01
JP2019052295A (ja) 2019-04-04
TW202003732A (zh) 2020-01-16
KR102323303B1 (ko) 2021-11-08
US11401441B2 (en) 2022-08-02
JP2020164877A (ja) 2020-10-08
CN109401631A (zh) 2019-03-01
IL261161B1 (en) 2023-11-01
IL261161A (en) 2019-01-31

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