IL261161B2 - Chemical Mechanical Planarization (CMP) Composition and Methods Therefor for Copper and Through Silica VIA (TSV) Applications - Google Patents

Chemical Mechanical Planarization (CMP) Composition and Methods Therefor for Copper and Through Silica VIA (TSV) Applications

Info

Publication number
IL261161B2
IL261161B2 IL261161A IL26116118A IL261161B2 IL 261161 B2 IL261161 B2 IL 261161B2 IL 261161 A IL261161 A IL 261161A IL 26116118 A IL26116118 A IL 26116118A IL 261161 B2 IL261161 B2 IL 261161B2
Authority
IL
Israel
Prior art keywords
alanine
group
chemical mechanical
colloidal silica
mechanical polishing
Prior art date
Application number
IL261161A
Other languages
English (en)
Hebrew (he)
Other versions
IL261161A (en
IL261161B1 (en
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of IL261161A publication Critical patent/IL261161A/en
Publication of IL261161B1 publication Critical patent/IL261161B1/en
Publication of IL261161B2 publication Critical patent/IL261161B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL261161A 2017-08-17 2018-08-15 Chemical Mechanical Planarization (CMP) Composition and Methods Therefor for Copper and Through Silica VIA (TSV) Applications IL261161B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762546914P 2017-08-17 2017-08-17
US16/101,869 US11401441B2 (en) 2017-08-17 2018-08-13 Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

Publications (3)

Publication Number Publication Date
IL261161A IL261161A (en) 2019-01-31
IL261161B1 IL261161B1 (en) 2023-11-01
IL261161B2 true IL261161B2 (en) 2024-03-01

Family

ID=63311834

Family Applications (1)

Application Number Title Priority Date Filing Date
IL261161A IL261161B2 (en) 2017-08-17 2018-08-15 Chemical Mechanical Planarization (CMP) Composition and Methods Therefor for Copper and Through Silica VIA (TSV) Applications

Country Status (8)

Country Link
US (1) US11401441B2 (enExample)
EP (1) EP3444309B1 (enExample)
JP (2) JP6995716B2 (enExample)
KR (2) KR102323303B1 (enExample)
CN (1) CN109401631A (enExample)
IL (1) IL261161B2 (enExample)
SG (1) SG10201806977YA (enExample)
TW (2) TW202003732A (enExample)

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JP7709517B2 (ja) * 2020-07-29 2025-07-16 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅及びスルーシリコンビア（ｔｓｖ）化学機械平坦化（ｃｍｐ）のためのパッドインボトル（ｐｉｂ）技術
CN116438267A (zh) * 2020-10-29 2023-07-14 富士胶片电子材料美国有限公司 研磨组成物及其使用方法
JP7818006B2 (ja) * 2020-12-14 2026-02-19 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅及びシリコン貫通電極（ｔｓｖ）のための化学機械平坦化（ｃｍｐ）
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
JP7596928B2 (ja) * 2021-05-24 2024-12-10 信越化学工業株式会社 研磨用組成物
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
KR102867479B1 (ko) * 2022-09-06 2025-10-14 한국전자기술연구원 선택적 연마특성이 향상된 실리콘관통전극의 구리 연마용 슬러리 조성물
CN122249521A (zh) 2023-11-21 2026-06-19 弗萨姆材料美国有限责任公司 用于化学机械平面化（cmp）抛光组合物的环境友好的杀生物剂
WO2025111138A1 (en) 2023-11-22 2025-05-30 Versum Materials Us, Llc Biocides for chemical mechanical planarization (cmp) polishing compositions
CN122319210A (zh) 2023-12-07 2026-06-30 弗萨姆材料美国有限责任公司 用于化学机械平面化(cmp)抛光组合物的化学添加剂
TW202546158A (zh) 2024-02-16 2025-12-01 美商慧盛材料美國責任有限公司 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑
WO2026164757A1 (en) 2025-01-29 2026-08-06 Versum Materials Us, Llc Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions
CN121203553B (zh) * 2025-09-29 2026-05-29 芯越微电子材料(嘉兴)有限公司 一种低凹陷硅通孔铜膜化学机械抛光液及其应用
CN121136611B (zh) * 2025-09-29 2026-05-29 芯越微电子材料(嘉兴)有限公司 一种硅通孔铜膜化学机械抛光液及其应用

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EP3088486A1 (en) * 2015-04-27 2016-11-02 Air Products And Chemicals, Inc. Low dishing copper chemical mechanical planarization

Also Published As

Publication number Publication date
JP2019052295A (ja) 2019-04-04
CN109401631A (zh) 2019-03-01
US11401441B2 (en) 2022-08-02
US20190055430A1 (en) 2019-02-21
JP6995716B2 (ja) 2022-01-17
TW202003732A (zh) 2020-01-16
SG10201806977YA (en) 2019-03-28
TW201920533A (zh) 2019-06-01
JP2020164877A (ja) 2020-10-08
KR20190019875A (ko) 2019-02-27
TWI678402B (zh) 2019-12-01
KR20200125564A (ko) 2020-11-04
EP3444309B1 (en) 2025-07-16
IL261161A (en) 2019-01-31
EP3444309A1 (en) 2019-02-20
IL261161B1 (en) 2023-11-01
KR102323303B1 (ko) 2021-11-08

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