CN109401631A - 用于铜和硅通孔（tsv）应用的化学机械平面化（cmp）组合物及其方法 - Google Patents
用于铜和硅通孔（tsv）应用的化学机械平面化（cmp）组合物及其方法 Download PDFInfo
- Publication number
- CN109401631A CN109401631A CN201810940445.6A CN201810940445A CN109401631A CN 109401631 A CN109401631 A CN 109401631A CN 201810940445 A CN201810940445 A CN 201810940445A CN 109401631 A CN109401631 A CN 109401631A
- Authority
- CN
- China
- Prior art keywords
- chemical mechanical
- composition
- copper
- mechanical polishing
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010949 copper Substances 0.000 title claims abstract description 195
- 239000000203 mixture Substances 0.000 title claims abstract description 86
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 49
- 239000000126 substance Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims description 21
- 229910052710 silicon Inorganic materials 0.000 title abstract description 13
- 239000010703 silicon Substances 0.000 title abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 99
- 239000002738 chelating agent Substances 0.000 claims abstract description 98
- 150000001413 amino acids Chemical class 0.000 claims abstract description 34
- 150000001412 amines Chemical class 0.000 claims abstract description 31
- 150000003862 amino acid derivatives Chemical class 0.000 claims abstract description 31
- 238000005260 corrosion Methods 0.000 claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 16
- 239000003139 biocide Substances 0.000 claims abstract description 15
- 239000003112 inhibitor Substances 0.000 claims abstract description 14
- 239000007800 oxidant agent Substances 0.000 claims abstract description 14
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000008119 colloidal silica Substances 0.000 claims description 36
- 229940024606 amino acid Drugs 0.000 claims description 33
- 235000001014 amino acid Nutrition 0.000 claims description 33
- QNAYBMKLOCPYGJ-UHFFFAOYSA-N D-alpha-Ala Natural products CC([NH3+])C([O-])=O QNAYBMKLOCPYGJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000004471 Glycine Substances 0.000 claims description 27
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 22
- DQKGOGJIOHUEGK-UHFFFAOYSA-M hydron;2-hydroxyethyl(trimethyl)azanium;carbonate Chemical compound OC([O-])=O.C[N+](C)(C)CCO DQKGOGJIOHUEGK-UHFFFAOYSA-M 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 22
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 19
- 229960003767 alanine Drugs 0.000 claims description 19
- 125000000217 alkyl group Chemical group 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 17
- QNAYBMKLOCPYGJ-UWTATZPHSA-N D-alanine Chemical compound C[C@@H](N)C(O)=O QNAYBMKLOCPYGJ-UWTATZPHSA-N 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 13
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 claims description 12
- 239000002105 nanoparticle Substances 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 150000003536 tetrazoles Chemical class 0.000 claims description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 9
- 239000003082 abrasive agent Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- -1 bicarbonate radical Chemical class 0.000 claims description 8
- 229950010030 dl-alanine Drugs 0.000 claims description 8
- 239000004381 Choline salt Substances 0.000 claims description 7
- 235000019417 choline salt Nutrition 0.000 claims description 7
- 150000003248 quinolines Chemical class 0.000 claims description 7
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- 150000001565 benzotriazoles Chemical class 0.000 claims description 6
- 229940000635 beta-alanine Drugs 0.000 claims description 6
- 230000003115 biocidal effect Effects 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 239000004480 active ingredient Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 4
- 229940100484 5-chloro-2-methyl-4-isothiazolin-3-one Drugs 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 125000000129 anionic group Chemical group 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical group OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 4
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical class C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004475 Arginine Substances 0.000 claims description 3
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 3
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 3
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 3
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 claims description 3
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 3
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 3
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 claims description 3
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 3
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 claims description 3
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 claims description 3
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 3
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 claims description 3
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 claims description 3
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 claims description 3
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 3
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 3
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 claims description 3
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004472 Lysine Substances 0.000 claims description 3
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 3
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 3
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- AYFVYJQAPQTCCC-UHFFFAOYSA-N Threonine Natural products CC(O)C(N)C(O)=O AYFVYJQAPQTCCC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004473 Threonine Substances 0.000 claims description 3
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 claims description 3
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 3
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 claims description 3
- 239000011609 ammonium molybdate Substances 0.000 claims description 3
- 235000018660 ammonium molybdate Nutrition 0.000 claims description 3
- 229940010552 ammonium molybdate Drugs 0.000 claims description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 3
- 229940058303 antinematodal benzimidazole derivative Drugs 0.000 claims description 3
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 3
- 229960001230 asparagine Drugs 0.000 claims description 3
- 235000009582 asparagine Nutrition 0.000 claims description 3
- 235000003704 aspartic acid Nutrition 0.000 claims description 3
- 150000001556 benzimidazoles Chemical class 0.000 claims description 3
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 3
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 3
- 229960001231 choline Drugs 0.000 claims description 3
- 239000011246 composite particle Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 235000013922 glutamic acid Nutrition 0.000 claims description 3
- 239000004220 glutamic acid Substances 0.000 claims description 3
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 claims description 3
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 3
- 150000002460 imidazoles Chemical class 0.000 claims description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 3
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 claims description 3
- 229960000310 isoleucine Drugs 0.000 claims description 3
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 claims description 3
- 229930182817 methionine Natural products 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 3
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 3
- 239000001230 potassium iodate Substances 0.000 claims description 3
- 235000006666 potassium iodate Nutrition 0.000 claims description 3
- 229940093930 potassium iodate Drugs 0.000 claims description 3
- 239000004323 potassium nitrate Substances 0.000 claims description 3
- 235000010333 potassium nitrate Nutrition 0.000 claims description 3
- 239000012286 potassium permanganate Substances 0.000 claims description 3
- 150000003217 pyrazoles Chemical class 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 claims description 3
- 239000004474 valine Substances 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims description 2
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 claims 8
- 229940093740 amino acid and derivative Drugs 0.000 claims 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical class C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 2
- 239000012964 benzotriazole Chemical class 0.000 claims 2
- 125000001376 1,2,4-triazolyl group Chemical class N1N=C(N=C1)* 0.000 claims 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 235000018417 cysteine Nutrition 0.000 claims 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000009472 formulation Methods 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 239000002904 solvent Substances 0.000 abstract description 2
- 125000003275 alpha amino acid group Chemical group 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 57
- 150000003141 primary amines Chemical group 0.000 description 24
- 235000004279 alanine Nutrition 0.000 description 12
- 150000004985 diamines Chemical class 0.000 description 12
- 125000003118 aryl group Chemical group 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
- 125000005647 linker group Chemical group 0.000 description 4
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 125000003630 glycyl group Chemical group [H]N([H])C([H])([H])C(*)=O 0.000 description 3
- 150000000178 1,2,4-triazoles Chemical class 0.000 description 2
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 description 2
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 description 2
- QVYARBLCAHCSFJ-UHFFFAOYSA-N butane-1,1-diamine Chemical compound CCCC(N)N QVYARBLCAHCSFJ-UHFFFAOYSA-N 0.000 description 2
- 229960003067 cystine Drugs 0.000 description 2
- 125000004427 diamine group Chemical group 0.000 description 2
- 150000002390 heteroarenes Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 125000003831 tetrazolyl group Chemical group 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-M L-tartrate(1-) Chemical compound OC(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-M 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762546914P | 2017-08-17 | 2017-08-17 | |
| US62/546,914 | 2017-08-17 | ||
| US16/101,869 | 2018-08-13 | ||
| US16/101,869 US11401441B2 (en) | 2017-08-17 | 2018-08-13 | Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109401631A true CN109401631A (zh) | 2019-03-01 |
Family
ID=63311834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810940445.6A Pending CN109401631A (zh) | 2017-08-17 | 2018-08-17 | 用于铜和硅通孔（tsv）应用的化学机械平面化（cmp）组合物及其方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11401441B2 (enExample) |
| EP (1) | EP3444309B1 (enExample) |
| JP (2) | JP6995716B2 (enExample) |
| KR (2) | KR102323303B1 (enExample) |
| CN (1) | CN109401631A (enExample) |
| IL (1) | IL261161B2 (enExample) |
| SG (1) | SG10201806977YA (enExample) |
| TW (2) | TW202003732A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113789127A (zh) * | 2021-10-20 | 2021-12-14 | 博力思(天津)电子科技有限公司 | 一种硅通孔铜膜抛光液 |
| CN114466909A (zh) * | 2019-09-30 | 2022-05-10 | 弗萨姆材料美国有限责任公司 | 低凹陷铜化学机械平面化 |
| CN116249754A (zh) * | 2020-07-29 | 2023-06-09 | 弗萨姆材料美国有限责任公司 | 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术 |
| CN116438267A (zh) * | 2020-10-29 | 2023-07-14 | 富士胶片电子材料美国有限公司 | 研磨组成物及其使用方法 |
| CN116745375A (zh) * | 2020-12-14 | 2023-09-12 | 弗萨姆材料美国有限责任公司 | 用于铜和硅通孔(tsv)的化学机械平面化(cmp) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200277514A1 (en) * | 2019-02-28 | 2020-09-03 | Versum Materials Us, Llc | Chemical Mechanical Polishing For Copper And Through Silicon Via Applications |
| KR102410845B1 (ko) * | 2021-01-08 | 2022-06-22 | 에스케이씨솔믹스 주식회사 | 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법 |
| JP7596928B2 (ja) * | 2021-05-24 | 2024-12-10 | 信越化学工業株式会社 | 研磨用組成物 |
| KR102867479B1 (ko) * | 2022-09-06 | 2025-10-14 | 한국전자기술연구원 | 선택적 연마특성이 향상된 실리콘관통전극의 구리 연마용 슬러리 조성물 |
| WO2025111136A1 (en) | 2023-11-21 | 2025-05-30 | Versum Materials Us, Llc | Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions |
| WO2025111138A1 (en) | 2023-11-22 | 2025-05-30 | Versum Materials Us, Llc | Biocides for chemical mechanical planarization (cmp) polishing compositions |
| WO2025122389A1 (en) | 2023-12-07 | 2025-06-12 | Versum Materials Us, Llc | Chemical additives for chemical mechanical planarization (cmp) polishing compositions |
| WO2025175199A1 (en) | 2024-02-16 | 2025-08-21 | Versum Materials Us, Llc | Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1906333A (zh) * | 2004-01-29 | 2007-01-31 | 应用材料公司 | 用于抛光衬底的方法和组合物 |
| CN104250816A (zh) * | 2013-06-27 | 2014-12-31 | 气体产品与化学公司 | 化学机械抛光浆料组合物和将其用于铜和硅通孔应用的方法 |
| CN106085245A (zh) * | 2015-04-27 | 2016-11-09 | 气体产品与化学公司 | 低凹陷的铜化学机械抛光 |
| CN106929858A (zh) * | 2015-12-31 | 2017-07-07 | 安集微电子科技(上海)有限公司 | 金属化学机械抛光浆料 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4264781B2 (ja) * | 1999-09-20 | 2009-05-20 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
| SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US8003587B2 (en) | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| JP2004071674A (ja) * | 2002-08-02 | 2004-03-04 | Nec Electronics Corp | 半導体装置の製造方法 |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| JP2005082791A (ja) * | 2003-09-11 | 2005-03-31 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
| US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
| KR100614773B1 (ko) * | 2004-12-28 | 2006-08-22 | 삼성전자주식회사 | 화학 기계적 연마 방법 |
| TWI385226B (zh) | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Ｃｍｐ控股公司 | 用於移除聚合物阻障之研磨漿液 |
| US8772214B2 (en) | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
| JP4952584B2 (ja) | 2005-12-27 | 2012-06-13 | 日立化成工業株式会社 | 金属用研磨液及び被研磨膜の研磨方法 |
| JP2008270584A (ja) * | 2007-04-23 | 2008-11-06 | Nippon Chem Ind Co Ltd | 半導体ウエハ研磨用組成物及び研磨加工方法 |
| KR20100049626A (ko) | 2007-09-03 | 2010-05-12 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 그의 제조 방법, 화학 기계 연마용 수계 분산체를 제조하기 위한 키트, 및 반도체 장치의 화학 기계 연마 방법 |
| US7955520B2 (en) | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| US8435421B2 (en) | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
| JP5408437B2 (ja) | 2008-02-07 | 2014-02-05 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体、および該分散体を調製するためのキット、該キットを用いた化学機械研磨用水系分散体の調製方法、ならびに半導体装置の化学機械研磨方法 |
| KR101104369B1 (ko) | 2009-04-22 | 2012-01-16 | 주식회사 엘지화학 | 화학적 기계적 연마용 슬러리 |
| US8679980B2 (en) | 2009-05-06 | 2014-03-25 | Basf Se | Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process |
| SG186294A1 (en) | 2010-07-19 | 2013-02-28 | Basf Se | Aqueous alkaline cleaning compositions and methods of their use |
| US8980122B2 (en) | 2011-07-08 | 2015-03-17 | General Engineering & Research, L.L.C. | Contact release capsule useful for chemical mechanical planarization slurry |
| US9057004B2 (en) | 2011-09-23 | 2015-06-16 | International Business Machines Corporation | Slurry for chemical-mechanical polishing of metals and use thereof |
| US8734665B2 (en) | 2011-10-12 | 2014-05-27 | International Business Machines Corporation | Slurry for chemical-mechanical polishing of copper and use thereof |
| WO2014112418A1 (ja) * | 2013-01-16 | 2014-07-24 | 日立化成株式会社 | 金属用研磨液及び研磨方法 |
| JP6250454B2 (ja) * | 2014-03-27 | 2017-12-20 | 株式会社フジミインコーポレーテッド | シリコン材料研磨用組成物 |
| US10217645B2 (en) | 2014-07-25 | 2019-02-26 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
| US10465096B2 (en) * | 2017-08-24 | 2019-11-05 | Versum Materials Us, Llc | Metal chemical mechanical planarization (CMP) composition and methods therefore |
-
2018
- 2018-08-13 US US16/101,869 patent/US11401441B2/en active Active
- 2018-08-15 IL IL261161A patent/IL261161B2/en unknown
- 2018-08-17 JP JP2018153625A patent/JP6995716B2/ja active Active
- 2018-08-17 SG SG10201806977YA patent/SG10201806977YA/en unknown
- 2018-08-17 EP EP18189581.4A patent/EP3444309B1/en active Active
- 2018-08-17 TW TW108139403A patent/TW202003732A/zh unknown
- 2018-08-17 CN CN201810940445.6A patent/CN109401631A/zh active Pending
- 2018-08-17 TW TW107128768A patent/TWI678402B/zh active
- 2018-08-17 KR KR1020180096362A patent/KR102323303B1/ko active Active
-
2020
- 2020-06-22 JP JP2020107244A patent/JP2020164877A/ja not_active Withdrawn
- 2020-10-28 KR KR1020200141157A patent/KR20200125564A/ko not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1906333A (zh) * | 2004-01-29 | 2007-01-31 | 应用材料公司 | 用于抛光衬底的方法和组合物 |
| CN104250816A (zh) * | 2013-06-27 | 2014-12-31 | 气体产品与化学公司 | 化学机械抛光浆料组合物和将其用于铜和硅通孔应用的方法 |
| US20150132956A1 (en) * | 2013-06-27 | 2015-05-14 | Air Products And Chemicals, Inc. | Chemical Mechanical Polishing Slurry Compositions and Method Using the Same for Copper and Through-Silicon Via Applications |
| CN106085245A (zh) * | 2015-04-27 | 2016-11-09 | 气体产品与化学公司 | 低凹陷的铜化学机械抛光 |
| CN106929858A (zh) * | 2015-12-31 | 2017-07-07 | 安集微电子科技(上海)有限公司 | 金属化学机械抛光浆料 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114466909A (zh) * | 2019-09-30 | 2022-05-10 | 弗萨姆材料美国有限责任公司 | 低凹陷铜化学机械平面化 |
| CN116249754A (zh) * | 2020-07-29 | 2023-06-09 | 弗萨姆材料美国有限责任公司 | 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术 |
| CN116438267A (zh) * | 2020-10-29 | 2023-07-14 | 富士胶片电子材料美国有限公司 | 研磨组成物及其使用方法 |
| CN116745375A (zh) * | 2020-12-14 | 2023-09-12 | 弗萨姆材料美国有限责任公司 | 用于铜和硅通孔(tsv)的化学机械平面化(cmp) |
| CN113789127A (zh) * | 2021-10-20 | 2021-12-14 | 博力思(天津)电子科技有限公司 | 一种硅通孔铜膜抛光液 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201920533A (zh) | 2019-06-01 |
| JP2020164877A (ja) | 2020-10-08 |
| EP3444309B1 (en) | 2025-07-16 |
| IL261161B2 (en) | 2024-03-01 |
| TW202003732A (zh) | 2020-01-16 |
| US11401441B2 (en) | 2022-08-02 |
| JP6995716B2 (ja) | 2022-01-17 |
| KR20200125564A (ko) | 2020-11-04 |
| US20190055430A1 (en) | 2019-02-21 |
| IL261161B1 (en) | 2023-11-01 |
| KR20190019875A (ko) | 2019-02-27 |
| EP3444309A1 (en) | 2019-02-20 |
| SG10201806977YA (en) | 2019-03-28 |
| KR102323303B1 (ko) | 2021-11-08 |
| TWI678402B (zh) | 2019-12-01 |
| JP2019052295A (ja) | 2019-04-04 |
| IL261161A (en) | 2019-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102323303B1 (ko) | 구리 및 관통 실리카 비아(tsv) 적용을 위한 화학적 기계적 평탄화(cmp) 조성물 및 이를 위한 방법 | |
| CN109456704B (zh) | 金属化学机械平面化（cmp）组合物及其方法 | |
| CN104250816B (zh) | 化学机械抛光浆料组合物和将其用于铜和硅通孔应用的方法 | |
| JP7240346B2 (ja) | 銅及びスルーシリコンビア用途のための化学機械研磨 | |
| US20240006189A1 (en) | Chemical Mechanical Planarization (CMP) For Copper And Through-Silicon Via (TSV) | |
| CN120530170A (zh) | 用于金属膜的cmp的组合物和方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |