JP2020141137A5 - - Google Patents

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JP2020141137A5
JP2020141137A5 JP2020032056A JP2020032056A JP2020141137A5 JP 2020141137 A5 JP2020141137 A5 JP 2020141137A5 JP 2020032056 A JP2020032056 A JP 2020032056A JP 2020032056 A JP2020032056 A JP 2020032056A JP 2020141137 A5 JP2020141137 A5 JP 2020141137A5
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Japan
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alanine
combinations
acid
composition
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JP2020032056A
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JP2020141137A (ja
JP7240346B2 (ja
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Priority claimed from US16/752,116 external-priority patent/US20200277514A1/en
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JP2020032056A 2019-02-28 2020-02-27 銅及びスルーシリコンビア用途のための化学機械研磨 Active JP7240346B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962811874P 2019-02-28 2019-02-28
US62/811,874 2019-02-28
US16/752,116 2020-01-24
US16/752,116 US20200277514A1 (en) 2019-02-28 2020-01-24 Chemical Mechanical Polishing For Copper And Through Silicon Via Applications

Publications (3)

Publication Number Publication Date
JP2020141137A JP2020141137A (ja) 2020-09-03
JP2020141137A5 true JP2020141137A5 (enExample) 2022-11-21
JP7240346B2 JP7240346B2 (ja) 2023-03-15

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JP2020032056A Active JP7240346B2 (ja) 2019-02-28 2020-02-27 銅及びスルーシリコンビア用途のための化学機械研磨

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US (1) US20200277514A1 (enExample)
EP (1) EP3702425A1 (enExample)
JP (1) JP7240346B2 (enExample)
KR (1) KR20200105431A (enExample)
CN (1) CN111732897A (enExample)
IL (1) IL272585B2 (enExample)
SG (1) SG10202001386VA (enExample)
TW (1) TW202039775A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021153171A1 (ja) * 2020-01-28 2021-08-05 富士フイルム株式会社 組成物、基板の処理方法
JP7818006B2 (ja) * 2020-12-14 2026-02-19 バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー 銅及びシリコン貫通電極(tsv)のための化学機械平坦化(cmp)
KR20230160334A (ko) * 2021-03-29 2023-11-23 엔테그리스, 아이엔씨. 화학적 기계적 평탄화(cmp)를 위한 현탁액 및 이를 사용하는 방법
CN115959779A (zh) * 2021-10-12 2023-04-14 中国石油化工股份有限公司 循环水系统预膜用组合物及其应用以及循环水系统预膜处理方法
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
TW202546158A (zh) 2024-02-16 2025-12-01 美商慧盛材料美國責任有限公司 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑
CN118406439B (zh) * 2024-07-01 2024-10-18 万华化学集团电子材料有限公司 化学机械抛光组合物及其在钨化学机械抛光中的应用
WO2026164757A1 (en) 2025-01-29 2026-08-06 Versum Materials Us, Llc Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
CN1842577A (zh) * 2003-06-06 2006-10-04 应用材料公司 用于抛光导电材料的抛光组合物和方法
TW200714696A (en) 2005-08-05 2007-04-16 Advanced Tech Materials High throughput chemical mechanical polishing composition for metal film planarization
TWI385226B (zh) 2005-09-08 2013-02-11 羅門哈斯電子材料Cmp控股公司 用於移除聚合物阻障之研磨漿液
KR20080070074A (ko) 2005-12-27 2008-07-29 히다치 가세고교 가부시끼가이샤 금속용 연마액 및 피연마막의 연마 방법
JP2010512657A (ja) 2006-12-22 2010-04-22 テクノ セミケム シーオー., エルティーディー. ゼオライトを含有する銅化学機械的研磨組成物
WO2009020625A1 (en) 2007-08-09 2009-02-12 Planar Solutions, Llc Copper polishing slurry
JPWO2009031389A1 (ja) 2007-09-03 2010-12-09 Jsr株式会社 化学機械研磨用水系分散体およびその調製方法、化学機械研磨用水系分散体を調製するためのキット、ならびに半導体装置の化学機械研磨方法
US7955520B2 (en) 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8435421B2 (en) 2007-11-27 2013-05-07 Cabot Microelectronics Corporation Metal-passivating CMP compositions and methods
JP5625044B2 (ja) 2009-04-22 2014-11-12 エルジー・ケム・リミテッド 化学的機械的研磨用スラリー
KR101793288B1 (ko) 2009-05-06 2017-11-02 바스프 에스이 측쇄 작용기를 함유하는 중합체 연마재를 포함한 수성 금속 연마제 및 cmp 공정에서 이의 용도
JP5646862B2 (ja) 2009-09-18 2014-12-24 長興開発科技股▲ふん▼有限公司 シリコン貫通ビア構造を有する半導体ウェハーの研磨方法、及びそれに使用する研磨組成物
CN102893376A (zh) 2010-06-01 2013-01-23 应用材料公司 铜晶圆研磨的化学平坦化
US8980122B2 (en) 2011-07-08 2015-03-17 General Engineering & Research, L.L.C. Contact release capsule useful for chemical mechanical planarization slurry
US9057004B2 (en) 2011-09-23 2015-06-16 International Business Machines Corporation Slurry for chemical-mechanical polishing of metals and use thereof
US8734665B2 (en) 2011-10-12 2014-05-27 International Business Machines Corporation Slurry for chemical-mechanical polishing of copper and use thereof
US8974692B2 (en) 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
US10217645B2 (en) * 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
KR101854499B1 (ko) 2015-04-24 2018-05-04 삼성에스디아이 주식회사 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마방법
US9978609B2 (en) 2015-04-27 2018-05-22 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization
WO2016195997A1 (en) 2015-05-29 2016-12-08 Weatherby Michael T Automated helmet gas bladder maintenance system and method
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
CN110099977B (zh) 2016-11-09 2021-05-11 福吉米株式会社 研磨用组合物及硅晶圆的研磨方法
US11401441B2 (en) * 2017-08-17 2022-08-02 Versum Materials Us, Llc Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

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