TW202039775A - 用於銅及貫穿矽通孔應用的化學機械研磨 - Google Patents

用於銅及貫穿矽通孔應用的化學機械研磨 Download PDF

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Publication number
TW202039775A
TW202039775A TW109105985A TW109105985A TW202039775A TW 202039775 A TW202039775 A TW 202039775A TW 109105985 A TW109105985 A TW 109105985A TW 109105985 A TW109105985 A TW 109105985A TW 202039775 A TW202039775 A TW 202039775A
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TW
Taiwan
Prior art keywords
group
copper
cmp
alanine
composition
Prior art date
Application number
TW109105985A
Other languages
English (en)
Chinese (zh)
Inventor
曉波 史
詹姆士艾倫 史魯特
馬克李納德 歐尼爾
Original Assignee
美商慧盛材料美國責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商慧盛材料美國責任有限公司 filed Critical 美商慧盛材料美國責任有限公司
Publication of TW202039775A publication Critical patent/TW202039775A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW109105985A 2019-02-28 2020-02-25 用於銅及貫穿矽通孔應用的化學機械研磨 TW202039775A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962811874P 2019-02-28 2019-02-28
US62/811,874 2019-02-28
US16/752,116 2020-01-24
US16/752,116 US20200277514A1 (en) 2019-02-28 2020-01-24 Chemical Mechanical Polishing For Copper And Through Silicon Via Applications

Publications (1)

Publication Number Publication Date
TW202039775A true TW202039775A (zh) 2020-11-01

Family

ID=69742787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109105985A TW202039775A (zh) 2019-02-28 2020-02-25 用於銅及貫穿矽通孔應用的化學機械研磨

Country Status (8)

Country Link
US (1) US20200277514A1 (enExample)
EP (1) EP3702425A1 (enExample)
JP (1) JP7240346B2 (enExample)
KR (1) KR20200105431A (enExample)
CN (1) CN111732897A (enExample)
IL (1) IL272585B2 (enExample)
SG (1) SG10202001386VA (enExample)
TW (1) TW202039775A (enExample)

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WO2021153171A1 (ja) * 2020-01-28 2021-08-05 富士フイルム株式会社 組成物、基板の処理方法
JP7818006B2 (ja) * 2020-12-14 2026-02-19 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅及びシリコン貫通電極（ｔｓｖ）のための化学機械平坦化（ｃｍｐ）
KR20230160334A (ko) * 2021-03-29 2023-11-23 엔테그리스, 아이엔씨. 화학적 기계적 평탄화(cmp)를 위한 현탁액 및 이를 사용하는 방법
CN115959779A (zh) * 2021-10-12 2023-04-14 中国石油化工股份有限公司 循环水系统预膜用组合物及其应用以及循环水系统预膜处理方法
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
TW202546158A (zh) 2024-02-16 2025-12-01 美商慧盛材料美國責任有限公司 用於金屬化學機械平坦化(cmp)研磨組合物的腐蝕抑制劑
CN118406439B (zh) * 2024-07-01 2024-10-18 万华化学集团电子材料有限公司 化学机械抛光组合物及其在钨化学机械抛光中的应用
WO2026164757A1 (en) 2025-01-29 2026-08-06 Versum Materials Us, Llc Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions

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Also Published As

Publication number Publication date
IL272585A (en) 2020-08-31
SG10202001386VA (en) 2020-09-29
KR20200105431A (ko) 2020-09-07
JP2020141137A (ja) 2020-09-03
CN111732897A (zh) 2020-10-02
US20200277514A1 (en) 2020-09-03
EP3702425A1 (en) 2020-09-02
JP7240346B2 (ja) 2023-03-15
IL272585B1 (en) 2024-04-01
IL272585B2 (en) 2024-08-01

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