TW202039775A - 用於銅及貫穿矽通孔應用的化學機械研磨 - Google Patents
用於銅及貫穿矽通孔應用的化學機械研磨 Download PDFInfo
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- TW202039775A TW202039775A TW109105985A TW109105985A TW202039775A TW 202039775 A TW202039775 A TW 202039775A TW 109105985 A TW109105985 A TW 109105985A TW 109105985 A TW109105985 A TW 109105985A TW 202039775 A TW202039775 A TW 202039775A
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- copper
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- alanine
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 1
- TYOWVJZFGQJLMZ-UHFFFAOYSA-N 2h-benzotriazole;1h-pyrrole Chemical class C=1C=CNC=1.C1=CC=C2NN=NC2=C1 TYOWVJZFGQJLMZ-UHFFFAOYSA-N 0.000 description 1
- JSIAIROWMJGMQZ-UHFFFAOYSA-N 2h-triazol-4-amine Chemical class NC1=CNN=N1 JSIAIROWMJGMQZ-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-M L-tartrate(1-) Chemical compound OC(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-M 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962811874P | 2019-02-28 | 2019-02-28 | |
| US62/811,874 | 2019-02-28 | ||
| US16/752,116 US20200277514A1 (en) | 2019-02-28 | 2020-01-24 | Chemical Mechanical Polishing For Copper And Through Silicon Via Applications |
| US16/752,116 | 2020-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202039775A true TW202039775A (zh) | 2020-11-01 |
Family
ID=69742787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109105985A TW202039775A (zh) | 2019-02-28 | 2020-02-25 | 用於銅及貫穿矽通孔應用的化學機械研磨 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20200277514A1 (enExample) |
| EP (1) | EP3702425A1 (enExample) |
| JP (1) | JP7240346B2 (enExample) |
| KR (1) | KR20200105431A (enExample) |
| CN (1) | CN111732897A (enExample) |
| IL (1) | IL272585B2 (enExample) |
| SG (1) | SG10202001386VA (enExample) |
| TW (1) | TW202039775A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7405872B2 (ja) * | 2020-01-28 | 2023-12-26 | 富士フイルム株式会社 | 組成物、基板の処理方法 |
| KR20230139386A (ko) * | 2020-12-14 | 2023-10-05 | 버슘머트리얼즈 유에스, 엘엘씨 | 구리 및 관통 실리콘 비아(tsv)를 위한 화학적 기계적평탄화(cmp) |
| US20220306902A1 (en) * | 2021-03-29 | 2022-09-29 | Entegris, Inc. | Suspension for chemical mechanical planarization (cmp) and method employing the same |
| CN115959779A (zh) * | 2021-10-12 | 2023-04-14 | 中国石油化工股份有限公司 | 循环水系统预膜用组合物及其应用以及循环水系统预膜处理方法 |
| CN113789127B (zh) * | 2021-10-20 | 2023-07-28 | 博力思(天津)电子科技有限公司 | 一种硅通孔铜膜抛光液 |
| WO2025175199A1 (en) | 2024-02-16 | 2025-08-21 | Versum Materials Us, Llc | Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions |
| CN118406439B (zh) * | 2024-07-01 | 2024-10-18 | 万华化学集团电子材料有限公司 | 化学机械抛光组合物及其在钨化学机械抛光中的应用 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
| KR20070104479A (ko) * | 2003-06-06 | 2007-10-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 전도성 물질을 폴리싱하기 위한 폴리싱 조성물 및 방법 |
| EP1929512A2 (en) | 2005-08-05 | 2008-06-11 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| TWI385226B (zh) | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Cmp控股公司 | 用於移除聚合物阻障之研磨漿液 |
| US8791019B2 (en) | 2005-12-27 | 2014-07-29 | Hitachi Chemical Company, Ltd. | Metal polishing slurry and method of polishing a film to be polished |
| WO2008078909A1 (en) | 2006-12-22 | 2008-07-03 | Techno Semichem Co., Ltd. | Chemical mechanical polishing composition for copper comprising zeolite |
| WO2009020625A1 (en) | 2007-08-09 | 2009-02-12 | Planar Solutions, Llc | Copper polishing slurry |
| JPWO2009031389A1 (ja) | 2007-09-03 | 2010-12-09 | Jsr株式会社 | 化学機械研磨用水系分散体およびその調製方法、化学機械研磨用水系分散体を調製するためのキット、ならびに半導体装置の化学機械研磨方法 |
| US7955520B2 (en) | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| US8435421B2 (en) | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
| WO2010123300A2 (en) | 2009-04-22 | 2010-10-28 | Lg Chem, Ltd. | Slurry for chemical mechanical polishing |
| EP2427523B1 (en) | 2009-05-06 | 2015-10-28 | Basf Se | An aqueous metal polishing agent comprising a polymeric abrasive containing pendant functional groups and its use in a cmp process |
| JP5646862B2 (ja) | 2009-09-18 | 2014-12-24 | 長興開発科技股▲ふん▼有限公司 | シリコン貫通ビア構造を有する半導体ウェハーの研磨方法、及びそれに使用する研磨組成物 |
| WO2011152966A2 (en) | 2010-06-01 | 2011-12-08 | Applied Materials, Inc. | Chemical planarization of copper wafer polishing |
| US8980122B2 (en) | 2011-07-08 | 2015-03-17 | General Engineering & Research, L.L.C. | Contact release capsule useful for chemical mechanical planarization slurry |
| US9057004B2 (en) | 2011-09-23 | 2015-06-16 | International Business Machines Corporation | Slurry for chemical-mechanical polishing of metals and use thereof |
| US8734665B2 (en) | 2011-10-12 | 2014-05-27 | International Business Machines Corporation | Slurry for chemical-mechanical polishing of copper and use thereof |
| US8974692B2 (en) * | 2013-06-27 | 2015-03-10 | Air Products And Chemicals, Inc. | Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications |
| US10217645B2 (en) * | 2014-07-25 | 2019-02-26 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
| KR101854499B1 (ko) | 2015-04-24 | 2018-05-04 | 삼성에스디아이 주식회사 | 구리 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마방법 |
| US9978609B2 (en) | 2015-04-27 | 2018-05-22 | Versum Materials Us, Llc | Low dishing copper chemical mechanical planarization |
| WO2016195997A1 (en) | 2015-05-29 | 2016-12-08 | Weatherby Michael T | Automated helmet gas bladder maintenance system and method |
| US10253216B2 (en) | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| CN110099977B (zh) | 2016-11-09 | 2021-05-11 | 福吉米株式会社 | 研磨用组合物及硅晶圆的研磨方法 |
| US11401441B2 (en) * | 2017-08-17 | 2022-08-02 | Versum Materials Us, Llc | Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications |
-
2020
- 2020-01-24 US US16/752,116 patent/US20200277514A1/en not_active Abandoned
- 2020-02-10 IL IL272585A patent/IL272585B2/en unknown
- 2020-02-14 SG SG10202001386VA patent/SG10202001386VA/en unknown
- 2020-02-25 TW TW109105985A patent/TW202039775A/zh unknown
- 2020-02-27 KR KR1020200024405A patent/KR20200105431A/ko not_active Ceased
- 2020-02-27 CN CN202010125856.7A patent/CN111732897A/zh active Pending
- 2020-02-27 JP JP2020032056A patent/JP7240346B2/ja active Active
- 2020-02-27 EP EP20159825.7A patent/EP3702425A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200105431A (ko) | 2020-09-07 |
| US20200277514A1 (en) | 2020-09-03 |
| SG10202001386VA (en) | 2020-09-29 |
| IL272585A (en) | 2020-08-31 |
| EP3702425A1 (en) | 2020-09-02 |
| JP2020141137A (ja) | 2020-09-03 |
| IL272585B2 (en) | 2024-08-01 |
| CN111732897A (zh) | 2020-10-02 |
| JP7240346B2 (ja) | 2023-03-15 |
| IL272585B1 (en) | 2024-04-01 |
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