JP2010205782A5 - - Google Patents
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- Publication number
- JP2010205782A5 JP2010205782A5 JP2009046801A JP2009046801A JP2010205782A5 JP 2010205782 A5 JP2010205782 A5 JP 2010205782A5 JP 2009046801 A JP2009046801 A JP 2009046801A JP 2009046801 A JP2009046801 A JP 2009046801A JP 2010205782 A5 JP2010205782 A5 JP 2010205782A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- silicide layer
- insulating film
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 239000002184 metal Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009046801A JP2010205782A (ja) | 2009-02-27 | 2009-02-27 | 半導体装置の製造方法 |
| US12/656,981 US8293653B2 (en) | 2009-02-27 | 2010-02-22 | Method of manufacturing a semiconductor device |
| CN201010119463.1A CN101819931B (zh) | 2009-02-27 | 2010-02-23 | 制造半导体装置的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009046801A JP2010205782A (ja) | 2009-02-27 | 2009-02-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010205782A JP2010205782A (ja) | 2010-09-16 |
| JP2010205782A5 true JP2010205782A5 (enExample) | 2012-03-29 |
Family
ID=42654964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009046801A Pending JP2010205782A (ja) | 2009-02-27 | 2009-02-27 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8293653B2 (enExample) |
| JP (1) | JP2010205782A (enExample) |
| CN (1) | CN101819931B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5326113B2 (ja) * | 2009-06-25 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の洗浄方法 |
| US8784572B2 (en) | 2011-10-19 | 2014-07-22 | Intermolecular, Inc. | Method for cleaning platinum residues on a semiconductor substrate |
| US8697573B2 (en) | 2011-11-09 | 2014-04-15 | Intermolecular, Inc. | Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating |
| FR3013502A1 (fr) | 2013-11-20 | 2015-05-22 | Commissariat Energie Atomique | Procede de protection d’une couche de siliciure |
| US9865466B2 (en) * | 2015-09-25 | 2018-01-09 | Applied Materials, Inc. | Silicide phase control by confinement |
| CN114005831B (zh) * | 2021-10-28 | 2024-03-22 | 上海华力微电子有限公司 | 一种改善NAND flash字线间漏电的工艺集成方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69533245D1 (de) | 1994-03-25 | 2004-08-19 | Nec Electronics Corp | Vorrichtung zur elektrolytischen Behandlung |
| JP3594718B2 (ja) | 1995-12-08 | 2004-12-02 | 大日本印刷株式会社 | 包装用材料およびそれを使用した押し出しラミネ−トチュ−ブ |
| CN1163946C (zh) | 1996-08-20 | 2004-08-25 | 奥加诺株式会社 | 清洗电子元件或其制造设备的元件的方法和装置 |
| JP3111979B2 (ja) * | 1998-05-20 | 2000-11-27 | 日本電気株式会社 | ウエハの洗浄方法 |
| KR100389917B1 (ko) * | 2000-09-06 | 2003-07-04 | 삼성전자주식회사 | 산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수 |
| JP2002305177A (ja) * | 2001-02-01 | 2002-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP4046486B2 (ja) * | 2001-06-13 | 2008-02-13 | Ｎｅｃエレクトロニクス株式会社 | 洗浄水及びウエハの洗浄方法 |
| JP3667273B2 (ja) * | 2001-11-02 | 2005-07-06 | Ｎｅｃエレクトロニクス株式会社 | 洗浄方法および洗浄液 |
| JP3680063B2 (ja) * | 2002-03-12 | 2005-08-10 | 株式会社東芝 | 半導体装置の製造方法 |
| CN1269190C (zh) | 2002-11-19 | 2006-08-09 | 台湾积体电路制造股份有限公司 | 制作接触孔于硅化镍层上方的方法 |
| JP3828511B2 (ja) * | 2003-06-26 | 2006-10-04 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2005085981A (ja) * | 2003-09-09 | 2005-03-31 | Matsushita Electric Ind Co Ltd | 電子デバイスの製造方法及び洗浄方法 |
| JP2005183937A (ja) * | 2003-11-25 | 2005-07-07 | Nec Electronics Corp | 半導体装置の製造方法およびレジスト除去用洗浄装置 |
| JP2006024823A (ja) * | 2004-07-09 | 2006-01-26 | Casio Comput Co Ltd | レジスト除去方法 |
| JP4917328B2 (ja) | 2006-02-28 | 2012-04-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2008198935A (ja) * | 2007-02-15 | 2008-08-28 | Sony Corp | 絶縁ゲート電界効果トランジスタの製造方法。 |
-
2009
- 2009-02-27 JP JP2009046801A patent/JP2010205782A/ja active Pending
-
2010
- 2010-02-22 US US12/656,981 patent/US8293653B2/en not_active Expired - Fee Related
- 2010-02-23 CN CN201010119463.1A patent/CN101819931B/zh not_active Expired - Fee Related
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