DE69533245D1 - Vorrichtung zur elektrolytischen Behandlung - Google Patents

Vorrichtung zur elektrolytischen Behandlung

Info

Publication number
DE69533245D1
DE69533245D1 DE69533245T DE69533245T DE69533245D1 DE 69533245 D1 DE69533245 D1 DE 69533245D1 DE 69533245 T DE69533245 T DE 69533245T DE 69533245 T DE69533245 T DE 69533245T DE 69533245 D1 DE69533245 D1 DE 69533245D1
Authority
DE
Germany
Prior art keywords
treatment device
electrolytic treatment
electrolytic
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69533245T
Other languages
English (en)
Inventor
Hiroshi Kitajima
Hidemitsu Aoki
Haruto Hamano
Yoshimi Shiramizu
Masaharu Nakamori
Kaori Watanabe
Hirofumi Seo
Yuji Shimizu
Makoto Iuchi
Yasusuhi Sasaki
Naomi Ohta
Morita Makoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6056108A external-priority patent/JP2743822B2/ja
Priority claimed from JP6056110A external-priority patent/JP2897637B2/ja
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Application granted granted Critical
Publication of DE69533245D1 publication Critical patent/DE69533245D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104—Devices therefor; Their operating or servicing
    • C02F1/4618—Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/46115—Electrolytic cell with membranes or diaphragms
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/4612—Controlling or monitoring
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/4618—Supplying or removing reactants or electrolyte
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/4618—Supplying or removing reactants or electrolyte
    • C02F2201/46185—Recycling the cathodic or anodic feed
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00—Apparatus for treatment of water, waste water or sewage
    • C02F2201/46—Apparatus for electrochemical processes
    • C02F2201/461—Electrolysis apparatus
    • C02F2201/46105—Details relating to the electrolytic devices
    • C02F2201/4619—Supplying gas to the electrolyte
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/04—Oxidation reduction potential [ORP]
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/06—Controlling or monitoring parameters in water treatment pH
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/42—Liquid level
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2301/00—General aspects of water treatment
    • C02F2301/06—Pressure conditions
    • C02F2301/066—Overpressure, high pressure
DE69533245T 1994-03-25 1995-03-22 Vorrichtung zur elektrolytischen Behandlung Expired - Lifetime DE69533245D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6056108A JP2743822B2 (ja) 1994-03-25 1994-03-25 電解活性水処理装置
JP6056110A JP2897637B2 (ja) 1994-03-25 1994-03-25 ウエット処理装置

Publications (1)

Publication Number Publication Date
DE69533245D1 true DE69533245D1 (de) 2004-08-19

Family

ID=26397038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69533245T Expired - Lifetime DE69533245D1 (de) 1994-03-25 1995-03-22 Vorrichtung zur elektrolytischen Behandlung

Country Status (5)

Country Link
US (1) US5549798A (de)
KR (1) KR0174107B1 (de)
CN (1) CN1065656C (de)
DE (1) DE69533245D1 (de)
TW (1) TW281785B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261687A (ja) * 1997-03-18 1998-09-29 Furontetsuku:Kk 半導体等製造装置
WO1999033496A1 (fr) * 1997-12-26 1999-07-08 Morinaga Milk Industry Co., Ltd. Procede de sterilisation d'articles et procede d'emballage d'articles
JP2000040679A (ja) 1998-07-24 2000-02-08 Hitachi Ltd 半導体集積回路装置の製造方法
WO2002101808A1 (fr) * 2001-06-11 2002-12-19 Kabushikikaisha Tsukuba Semi Technology Dispositif de nettoyage/traitement pour element non traite et procede de nettoyage/traitement
JP4753596B2 (ja) * 2004-05-19 2011-08-24 大日本スクリーン製造株式会社 基板処理装置
JP4462146B2 (ja) * 2004-09-17 2010-05-12 栗田工業株式会社 硫酸リサイクル型洗浄システムおよび硫酸リサイクル型過硫酸供給装置
JP2010205782A (ja) * 2009-02-27 2010-09-16 Renesas Electronics Corp 半導体装置の製造方法
US20200306802A1 (en) * 2017-12-18 2020-10-01 Sekisui Chemical Co., Ltd. Surface treatment method and surface treatment apparatus
GB201804881D0 (en) * 2018-03-27 2018-05-09 Lam Res Ag Method of producing rinsing liquid
CN109013589B (zh) * 2018-07-12 2021-07-30 芜湖慧宇商贸有限公司 一种家庭用水循环处理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834850A (en) * 1987-07-27 1989-05-30 Eltech Systems Corporation Efficient electrolytic precious metal recovery system
US4891103A (en) * 1988-08-23 1990-01-02 Texas Instruments Incorporated Anadization system with remote voltage sensing and active feedback control capabilities
EP0445120B1 (de) * 1988-11-24 1995-09-13 GRAMM, Gerhard Vorrichtung zum auf- und/oder abtragen von überzügen bei werkstücken
DE3937391A1 (de) * 1989-11-10 1991-05-16 Kolbe & Co Hans Vorrichtung zur regenerierung von aetzloesung
DE69312636T2 (de) * 1992-11-09 1998-02-05 Canon Kk Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat
JP2859081B2 (ja) * 1993-01-08 1999-02-17 日本電気株式会社 ウェット処理方法及び処理装置
JPH06240499A (ja) * 1993-02-12 1994-08-30 Yamaha Corp メッキ方法及びその装置
US5411652A (en) * 1993-12-15 1995-05-02 Allied-Signal Inc. Optimum conversion chamber

Also Published As

Publication number Publication date
US5549798A (en) 1996-08-27
KR0174107B1 (ko) 1999-04-01
KR950027973A (ko) 1995-10-18
CN1113034A (zh) 1995-12-06
CN1065656C (zh) 2001-05-09
TW281785B (de) 1996-07-21

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Legal Events

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