DE69312636T2 - Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat - Google Patents

Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat

Info

Publication number
DE69312636T2
DE69312636T2 DE69312636T DE69312636T DE69312636T2 DE 69312636 T2 DE69312636 T2 DE 69312636T2 DE 69312636 T DE69312636 T DE 69312636T DE 69312636 T DE69312636 T DE 69312636T DE 69312636 T2 DE69312636 T2 DE 69312636T2
Authority
DE
Germany
Prior art keywords
treated
substrate
carrier device
anodizing apparatus
anodizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69312636T
Other languages
English (en)
Other versions
DE69312636D1 (de
Inventor
Yasutomo Fujiyama
Mitsuhiro Ishii
Senju Kanbe
Takao Yonehara
Toru Takisawa
Akira Okita
Kiyofumi Sakaguchi
Takanori Watanabe
Kazuo Kokumai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32229592A external-priority patent/JP3110178B2/ja
Priority claimed from JP73293A external-priority patent/JP3181128B2/ja
Priority claimed from JP2163793A external-priority patent/JPH06216110A/ja
Priority claimed from JP08687693A external-priority patent/JP3416190B2/ja
Priority claimed from JP05095011A external-priority patent/JP3129569B2/ja
Priority claimed from JP12207793A external-priority patent/JP3201875B2/ja
Priority claimed from JP13511793A external-priority patent/JPH06326084A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69312636D1 publication Critical patent/DE69312636D1/de
Application granted granted Critical
Publication of DE69312636T2 publication Critical patent/DE69312636T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/005—Apparatus specially adapted for electrolytic conversion coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
DE69312636T 1992-11-09 1993-11-08 Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat Expired - Lifetime DE69312636T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP32229592A JP3110178B2 (ja) 1992-11-09 1992-11-09 半導体基板の作製方法及び陽極化成装置
JP73293A JP3181128B2 (ja) 1993-01-06 1993-01-06 半導体プロセス装置
JP2163793A JPH06216110A (ja) 1993-01-18 1993-01-18 陽極化成方法及び陽極化成装置
JP08687693A JP3416190B2 (ja) 1993-03-23 1993-03-23 陽極化成装置及び陽極化成方法
JP05095011A JP3129569B2 (ja) 1993-03-31 1993-03-31 陽極化成装置及び陽極化成法
JP12207793A JP3201875B2 (ja) 1993-04-27 1993-04-27 陽極化成装置及び陽極化成法
JP13511793A JPH06326084A (ja) 1993-05-14 1993-05-14 陽極化成装置

Publications (2)

Publication Number Publication Date
DE69312636D1 DE69312636D1 (de) 1997-09-04
DE69312636T2 true DE69312636T2 (de) 1998-02-05

Family

ID=27563084

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312636T Expired - Lifetime DE69312636T2 (de) 1992-11-09 1993-11-08 Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat

Country Status (3)

Country Link
US (1) US5458755A (de)
EP (1) EP0597428B1 (de)
DE (1) DE69312636T2 (de)

Families Citing this family (65)

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US5824199A (en) * 1993-11-22 1998-10-20 E. I. Du Pont De Nemours And Company Electrochemical cell having an inflatable member
DE69533245D1 (de) * 1994-03-25 2004-08-19 Nec Electronics Corp Vorrichtung zur elektrolytischen Behandlung
JP3376258B2 (ja) * 1996-11-28 2003-02-10 キヤノン株式会社 陽極化成装置及びそれに関連する装置及び方法
JP3985065B2 (ja) * 1997-05-14 2007-10-03 忠弘 大見 多孔質シリコン基板の形成方法及び多孔質シリコン基板の形成装置
JP3413090B2 (ja) 1997-12-26 2003-06-03 キヤノン株式会社 陽極化成装置及び陽極化成処理方法
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DE19803852C2 (de) * 1998-01-31 2003-12-18 Bosch Gmbh Robert Verfahren zur Herstellung beidseitig oxidierter Siliziumwafer
JPH11243076A (ja) * 1998-02-26 1999-09-07 Canon Inc 陽極化成方法及び陽極化成装置並びに半導体基板の製造方法
JP3762144B2 (ja) 1998-06-18 2006-04-05 キヤノン株式会社 Ｓｏｉ基板の作製方法
JP2000082679A (ja) 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
US6197654B1 (en) * 1998-08-21 2001-03-06 Texas Instruments Incorporated Lightly positively doped silicon wafer anodization process
US6417069B1 (en) 1999-03-25 2002-07-09 Canon Kabushiki Kaisha Substrate processing method and manufacturing method, and anodizing apparatus
US6468923B1 (en) 1999-03-26 2002-10-22 Canon Kabushiki Kaisha Method of producing semiconductor member
US6410436B2 (en) 1999-03-26 2002-06-25 Canon Kabushiki Kaisha Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
DE19914905A1 (de) * 1999-04-01 2000-10-05 Bosch Gmbh Robert Elektrochemische Ätzanlage und Verfahren zur Ätzung eines Ätzkörpers
DE19936569B4 (de) * 1999-08-03 2006-04-27 Robert Bosch Gmbh Herstellung von porösem Silicium
US20010038153A1 (en) 2000-01-07 2001-11-08 Kiyofumi Sakaguchi Semiconductor substrate and process for its production
JP2002075917A (ja) 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
US6454917B1 (en) * 2000-10-30 2002-09-24 Taiwan Semiconductor Manufacturing Co., Ltd. High throughput and high performance copper electroplating tool
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
US20040124088A1 (en) * 2002-12-26 2004-07-01 Canon Kabushiki Kaisha Processing apparatus
JP4438049B2 (ja) * 2003-08-11 2010-03-24 キヤノン株式会社 電界効果トランジスタ及びそれを用いたセンサ並びにその製造方法
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
JP2005210062A (ja) * 2003-12-26 2005-08-04 Canon Inc 半導体部材とその製造方法、及び半導体装置
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
JP2007297657A (ja) * 2006-04-28 2007-11-15 Canon Inc 吸着パット及び基板処理装置
JP2008019495A (ja) * 2006-07-14 2008-01-31 Ebara Corp 多孔質体の洗浄方法および洗浄装置
US20080264477A1 (en) * 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US8035027B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US8168465B2 (en) 2008-11-13 2012-05-01 Solexel, Inc. Three-dimensional semiconductor template for making high efficiency thin-film solar cells
US7999174B2 (en) * 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
WO2009114108A2 (en) * 2008-03-08 2009-09-17 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US9890465B2 (en) * 2009-01-15 2018-02-13 Trutag Technologies, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US8906218B2 (en) * 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
MY170119A (en) 2009-01-15 2019-07-05 Trutag Tech Inc Porous silicon electro-etching system and method
US8999058B2 (en) * 2009-05-05 2015-04-07 Solexel, Inc. High-productivity porous semiconductor manufacturing equipment
US9076642B2 (en) * 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
CN102763226B (zh) 2009-12-09 2016-01-27 速力斯公司 使用薄平面半导体的高效光伏背触点太阳能电池结构和制造方法
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
ITMI20100407A1 (it) * 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
JP5489855B2 (ja) 2010-05-14 2014-05-14 キヤノン株式会社 固体撮像装置の製造方法
WO2011156657A2 (en) 2010-06-09 2011-12-15 Solexel, Inc. High productivity thin film deposition method and system
JP5715351B2 (ja) * 2010-06-30 2015-05-07 キヤノン株式会社 半導体装置およびその製造方法、ならびに固体撮像装置
EP2601687A4 (de) 2010-08-05 2018-03-07 Solexel, Inc. Rückseitenverstärkung und vernetzungsmittel für solarzellen
KR101347681B1 (ko) * 2010-09-24 2014-01-06 솔렉셀, 인크. 고생산성 배치 다공성 실리콘 제조 장치 디자인 및 가공 방법
EP2652774B1 (de) * 2010-11-03 2017-10-11 Solexel, Inc. Vorrichtung und verfahren zur gleichmässigen herstellung poröser halbleiter auf einem substrat
US8992746B2 (en) * 2010-12-02 2015-03-31 Dainippon Screen Mfg. Co., Ltd. Anodizing apparatus
EP2710639A4 (de) 2011-05-20 2015-11-25 Solexel Inc Selbstaktivierte vorderseiten-vorspannung für eine solarzelle
JP5908266B2 (ja) * 2011-11-30 2016-04-26 株式会社Ｓｃｒｅｅｎホールディングス 陽極化成装置及びそれを備えた陽極化成システム並びに半導体ウエハ
JP6189656B2 (ja) 2013-06-14 2017-08-30 Ｋｙｂ株式会社 給電部材及びそれを備えた高速めっき装置
JP6193005B2 (ja) 2013-06-14 2017-09-06 Ｋｙｂ株式会社 保持装置及びそれを備えた高速めっき装置
FR3020642B1 (fr) * 2014-04-30 2021-07-02 Turbomeca Dispositif destine a la mise en oeuvre d'un traitement d'anodisation
FR3039564B1 (fr) * 2015-07-31 2017-08-25 Silimixt Dispositif de support pour substrat a traiter notamment par voie chimique ou electrochimique
FR3039563B1 (fr) * 2015-07-31 2017-08-25 Silimixt Dispositif de support adaptable pour substrats a traiter notamment par voie chimique ou electrochimique
CN106906506B (zh) * 2016-12-29 2018-12-25 平湖瑞星金属工艺有限公司 一种通讯设备表面氧化处理的夹具
JP6847691B2 (ja) * 2017-02-08 2021-03-24 株式会社荏原製作所 めっき装置およびめっき装置とともに使用される基板ホルダ
ES2816180T3 (es) * 2018-02-26 2021-03-31 Cockerill Maintenance & Ingenierie Sa Instalación y método de tratamiento superficial localizado para piezas industriales
CN109056049B (zh) * 2018-08-16 2020-08-04 湖南文理学院 一种纳米多孔硅双凹透镜的制备方法
JP2020105590A (ja) 2018-12-27 2020-07-09 キオクシア株式会社 基板処理装置および基板処理方法
KR20200104691A (ko) * 2019-02-27 2020-09-04 주식회사 만도 아노다이징 장치

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Also Published As

Publication number Publication date
US5458755A (en) 1995-10-17
EP0597428B1 (de) 1997-07-30
DE69312636D1 (de) 1997-09-04
EP0597428A1 (de) 1994-05-18

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