ITMI20100407A1 - Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto - Google Patents

Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto

Info

Publication number
ITMI20100407A1
ITMI20100407A1 IT000407A ITMI20100407A ITMI20100407A1 IT MI20100407 A1 ITMI20100407 A1 IT MI20100407A1 IT 000407 A IT000407 A IT 000407A IT MI20100407 A ITMI20100407 A IT MI20100407A IT MI20100407 A1 ITMI20100407 A1 IT MI20100407A1
Authority
IT
Italy
Prior art keywords
substrate
porous semiconductor
prime
contact terminals
photo
Prior art date
Application number
IT000407A
Other languages
English (en)
Inventor
Marco Balucani
Original Assignee
Rise Technology S R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rise Technology S R L filed Critical Rise Technology S R L
Priority to IT000407A priority Critical patent/ITMI20100407A1/it
Priority to JP2012557505A priority patent/JP2013522895A/ja
Priority to CN201180020401.8A priority patent/CN102870237B/zh
Priority to TW100108235A priority patent/TWI565092B/zh
Priority to PCT/EP2011/053739 priority patent/WO2011110682A2/en
Priority to CN201710122012.5A priority patent/CN106935671A/zh
Priority to EP11713203.5A priority patent/EP2545596B1/en
Priority to US13/634,238 priority patent/US20130061920A1/en
Publication of ITMI20100407A1 publication Critical patent/ITMI20100407A1/it
Priority to US15/456,426 priority patent/US20170186890A1/en
Priority to US15/711,963 priority patent/US10109512B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
    • C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/026—Electroplating of selected surface areas using locally applied jets of electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Formation Of Insulating Films (AREA)
IT000407A 2010-03-12 2010-03-12 Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto ITMI20100407A1 (it)

Priority Applications (10)

Application Number Priority Date Filing Date Title
IT000407A ITMI20100407A1 (it) 2010-03-12 2010-03-12 Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
JP2012557505A JP2013522895A (ja) 2010-03-12 2011-03-11 接触端末、電解モジュール及びエッチングモジュールを固定するための多孔質半導体領域を有する光起電力電池、及び関連製造ライン
CN201180020401.8A CN102870237B (zh) 2010-03-12 2011-03-11 具有用于锚固接触端子的多孔半导体区域的光伏电池、电解和蚀刻模块以及相关生产线
TW100108235A TWI565092B (zh) 2010-03-12 2011-03-11 接觸端子／電解蝕刻模組設計的多孔半導體光伏電池以及相關的生產線
PCT/EP2011/053739 WO2011110682A2 (en) 2010-03-12 2011-03-11 Photovoltaic cell with porous semiconductor regions for anchoring contact terminals, electrolitic and etching modules, and related production line
CN201710122012.5A CN106935671A (zh) 2010-03-12 2011-03-11 具有用于锚固接触端子的多孔半导体区域的光伏电池、电解和蚀刻模块以及相关生产线
EP11713203.5A EP2545596B1 (en) 2010-03-12 2011-03-11 Methods for performing electrolytic processes and an etching process
US13/634,238 US20130061920A1 (en) 2010-03-12 2011-03-12 Photovoltaic cell with porous semiconductor regions for anchoring contact terminals, electrolitic and etching modules, and related production line
US15/456,426 US20170186890A1 (en) 2010-03-12 2017-03-10 Photovoltaic cell with porous semiconductor regions for anchoring contact terminals, electrolitic and etching modules, and related production line
US15/711,963 US10109512B2 (en) 2010-03-12 2017-09-21 Photovoltaic cell with porous semiconductor regions for anchoring contact terminals, electrolitic and etching modules, and related production line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000407A ITMI20100407A1 (it) 2010-03-12 2010-03-12 Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto

Publications (1)

Publication Number Publication Date
ITMI20100407A1 true ITMI20100407A1 (it) 2011-09-13

Family

ID=42931928

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000407A ITMI20100407A1 (it) 2010-03-12 2010-03-12 Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto

Country Status (7)

Country Link
US (3) US20130061920A1 (it)
EP (1) EP2545596B1 (it)
JP (1) JP2013522895A (it)
CN (2) CN106935671A (it)
IT (1) ITMI20100407A1 (it)
TW (1) TWI565092B (it)
WO (1) WO2011110682A2 (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20100407A1 (it) * 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
DE102013219342A1 (de) * 2013-09-26 2015-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Strukturierung von Schichten oxidierbarer Materialien mittels Oxidation sowie Substrat mit strukturierter Beschichtung
DE102013219886A1 (de) * 2013-10-01 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten
WO2015090423A1 (en) * 2013-12-19 2015-06-25 Applied Materials Italia S.R.L. Method for producing a conductive contact pattern for a solar cell
KR101622091B1 (ko) * 2014-08-20 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US11702692B2 (en) 2014-11-05 2023-07-18 Fundación De Investigación Hospital 12 De Octubre Method of treatment of disease and method for quantifying the level of minimal residual disease in a subject
WO2017002265A1 (ja) * 2015-07-02 2017-01-05 三菱電機株式会社 太陽電池セルおよび太陽電池セルの製造方法
US10181428B2 (en) * 2015-08-28 2019-01-15 Skyworks Solutions, Inc. Silicon on porous silicon
US10483010B2 (en) * 2016-09-07 2019-11-19 Lam Research Ag Reduction of surface and embedded substrate charge by controlled exposure to vacuum ultraviolet (VUV) light in low-oxygen environment
USD841570S1 (en) 2017-08-25 2019-02-26 Flex Ltd Solar cell
USD841571S1 (en) 2017-08-25 2019-02-26 Flex Ltd. Solar panel
CN110335902A (zh) * 2017-03-09 2019-10-15 伟创力有限公司 叠瓦式阵列太阳能电池及制造包括叠瓦式阵列太阳能电池的太阳能组件的方法
US10784348B2 (en) * 2017-03-23 2020-09-22 Qualcomm Incorporated Porous semiconductor handle substrate
US20180337630A1 (en) 2017-05-18 2018-11-22 Andersen Corporation Insulating glazing unit with photovoltaic power source
PL425045A1 (pl) * 2018-03-28 2019-10-07 Uniwersytet Jagielloński Sposób wytwarzania nanoporowatych warstw półprzewodzących tlenków metali
EP3588584A1 (en) * 2018-06-29 2020-01-01 Total SA Solar cells and metallization process and device
IT201800009071A1 (it) * 2018-10-01 2020-04-01 Rise Tech Srl Realizzazione di strutture multi-componente tramite menischi dinamici
CN109065656A (zh) 2018-10-31 2018-12-21 伟创力有限公司 形成用于集成在太阳能电池组件中的有色导电焊带的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644156A (en) * 1994-04-14 1997-07-01 Kabushiki Kaisha Toshiba Porous silicon photo-device capable of photoelectric conversion

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3162589A (en) * 1954-06-01 1964-12-22 Rca Corp Methods of making semiconductor devices
EP0597428B1 (en) * 1992-11-09 1997-07-30 Canon Kabushiki Kaisha Anodization apparatus with supporting device for substrate to be treated
JP3416190B2 (ja) * 1993-03-23 2003-06-16 キヤノン株式会社 陽極化成装置及び陽極化成方法
JPH07230983A (ja) * 1994-02-15 1995-08-29 Sony Corp 多孔質状シリコンの形成方法およびその多孔質状シリコンを用いた光半導体装置
US6406984B1 (en) * 1997-10-06 2002-06-18 The United States Of America As Represented By The Secretary Of The Navy Method of making improved electrical contact to porous silicon using intercalated conductive materials
JP2001203184A (ja) * 2000-01-19 2001-07-27 Matsushita Electric Ind Co Ltd 加工装置及び加工方法
JP2002146595A (ja) * 2000-11-14 2002-05-22 Sony Corp 電解メッキ装置および電解メッキ方法
US7202412B2 (en) * 2002-01-18 2007-04-10 Sharp Kabushiki Kaisha Photovoltaic cell including porous semiconductor layer, method of manufacturing the same and solar cell
US7240679B2 (en) * 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7153400B2 (en) * 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
JP2004134428A (ja) * 2002-10-08 2004-04-30 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
TWI245739B (en) 2002-12-05 2005-12-21 Ibm Method and device for flowing a liquid on a surface
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
JP4466231B2 (ja) * 2004-06-25 2010-05-26 パナソニック電工株式会社 圧力波発生素子およびその製造方法
US7003899B1 (en) * 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
ITMI20060478A1 (it) * 2006-03-16 2007-09-17 Eles Semiconductor Equipment Spa Sistema per contattare dispositivim elettronici e relativo metodo di produzione basato su filo conduttore annegato in materiale isolante
US7396430B2 (en) * 2006-03-31 2008-07-08 Lam Research Corporation Apparatus and method for confined area planarization
KR20070099840A (ko) * 2006-04-05 2007-10-10 삼성에스디아이 주식회사 태양 전지 및 이의 제조 방법
CN101055899A (zh) * 2006-04-10 2007-10-17 上海太阳能科技有限公司 多孔硅层结构的晶体硅太阳电池
AU2007313050B2 (en) * 2006-08-29 2012-05-31 Liao, Hsiu-Chen A foam spring mattress configured with variable firmness
ES2394167T3 (es) * 2006-10-16 2013-01-23 Materials And Technologies Corporation Aparato de procesamiento húmedo usando un menisco de fluído
US20080149147A1 (en) * 2006-12-22 2008-06-26 Lam Research Proximity head with configurable delivery
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US8323460B2 (en) * 2007-06-20 2012-12-04 Lam Research Corporation Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal
US20090188553A1 (en) 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
DE102009008152A1 (de) * 2009-02-09 2010-08-19 Nb Technologies Gmbh Siliziumsolarzelle
ITMI20100407A1 (it) 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644156A (en) * 1994-04-14 1997-07-01 Kabushiki Kaisha Toshiba Porous silicon photo-device capable of photoelectric conversion

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GONZALEZ-DIAZ B ET AL: "Gradual oxidation of stain etched porous silicon nanostructures applied to silicon-based solar cells", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH LNKD- DOI:10.1016/J.SNA.2008.12.006, vol. 150, no. 1, 16 March 2009 (2009-03-16), pages 97 - 101, XP025959098, ISSN: 0924-4247, [retrieved on 20090223] *
PRIYANKA SHARMA ET AL: "Comparison of the properties of porous silicon films with different back contacts (Ag, Al) for possible photovoltaic applications", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL LNKD- DOI:10.1016/J.SOLMAT.2007.04.004, vol. 91, no. 15-16, 19 July 2007 (2007-07-19), pages 1510 - 1514, XP022152506, ISSN: 0927-0248 *
VINOD ET AL: "The ohmic properties and current-voltage characteristics of the screen-printed silicon solar cells with porous silicon surface", SOLID STATE COMMUNICATIONS, PERGAMON, GB LNKD- DOI:10.1016/J.SSC.2009.03.019, vol. 149, no. 23-24, 1 June 2009 (2009-06-01), pages 957 - 961, XP026098082, ISSN: 0038-1098, [retrieved on 20090324] *

Also Published As

Publication number Publication date
TW201145553A (en) 2011-12-16
CN106935671A (zh) 2017-07-07
TWI565092B (zh) 2017-01-01
US20170186890A1 (en) 2017-06-29
JP2013522895A (ja) 2013-06-13
CN102870237B (zh) 2017-04-05
EP2545596A2 (en) 2013-01-16
US20180012782A1 (en) 2018-01-11
US20130061920A1 (en) 2013-03-14
CN102870237A (zh) 2013-01-09
US10109512B2 (en) 2018-10-23
EP2545596B1 (en) 2016-05-11
WO2011110682A3 (en) 2012-03-08
WO2011110682A2 (en) 2011-09-15

Similar Documents

Publication Publication Date Title
ITMI20100407A1 (it) Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
MY180307A (en) Solar cell and method for producing thereof
MY168566A (en) Method for manufacturing crystalline silicon solar cell, method for manufacturing solar cell module, crystalline silicon solar cell, and solar cell module
MY158500A (en) Backplane reinforcement and interconnects for solar cells
WO2013152965A3 (de) Photovoltaische dünnschichtsolarmodule sowie verfahren zur herstellung solcher dünnschichtsolarmodule
MY170628A (en) Solar cell, solar cell manufacturing method, and solar cell module
MY172480A (en) Solar cell, manufacturing method thereof, solar-cell module, and manufacturing method thereof
WO2012166974A3 (en) Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
MY170447A (en) Systems and methods for monolithically integrated bypass switches in photovoltaic solar cells and modules
MY177509A (en) Trench process and structure for backside contact solar cells with polysilicon doped regions
PH12016502161A1 (en) Solar cell emitter region fabrication using ion implantation
WO2010082794A3 (ko) 직/병렬 혼합형 염료감응형 태양전지 모듈
WO2013022479A3 (en) High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
WO2012037191A3 (en) Improved photovoltaic cell assembly and method
MX2013008573A (es) Celdas fotovoltaicas transparentes.
WO2006110341A3 (en) Nano-structured photovoltaic solar cells and related methods
WO2007126441A3 (en) Back-contact photovoltaic cells
MY169379A (en) Solar cell and solar cell module
EP2293350A3 (en) Solar cell and method for manufacturing the same
MY170106A (en) Method for manufacturing solar cell, solar cell and solar-cell module
MY176293A (en) Back contact type solar battery cell
WO2010013956A3 (en) Solar cell, method of manufacturing the same, and solar cell module
WO2013124438A3 (de) Verfahren und vorrichtung zur herstellung eines solarmoduls und ein solarmodul mit flexiblen dünnschicht-solarzellen
EP2631953A3 (en) Solar cell module
MY173471A (en) Thin film solar module and method for production of the same