JP2010278320A5 - - Google Patents
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- Publication number
- JP2010278320A5 JP2010278320A5 JP2009130819A JP2009130819A JP2010278320A5 JP 2010278320 A5 JP2010278320 A5 JP 2010278320A5 JP 2009130819 A JP2009130819 A JP 2009130819A JP 2009130819 A JP2009130819 A JP 2009130819A JP 2010278320 A5 JP2010278320 A5 JP 2010278320A5
- Authority
- JP
- Japan
- Prior art keywords
- resist mask
- film
- layer
- forming
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 62
- 239000004065 semiconductor Substances 0.000 claims 19
- 238000005530 etching Methods 0.000 claims 15
- 238000000034 method Methods 0.000 claims 10
- 238000000206 photolithography Methods 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 3
- 238000004380 ashing Methods 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 3
- 230000007261 regionalization Effects 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009130819A JP5514474B2 (ja) | 2009-05-29 | 2009-05-29 | 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009130819A JP5514474B2 (ja) | 2009-05-29 | 2009-05-29 | 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010278320A JP2010278320A (ja) | 2010-12-09 |
| JP2010278320A5 true JP2010278320A5 (enExample) | 2012-06-21 |
| JP5514474B2 JP5514474B2 (ja) | 2014-06-04 |
Family
ID=43424995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009130819A Expired - Fee Related JP5514474B2 (ja) | 2009-05-29 | 2009-05-29 | 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5514474B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5563888B2 (ja) * | 2010-05-12 | 2014-07-30 | 三菱電機株式会社 | 薄膜トランジスタとその製造方法、アクティブマトリックス基板、及び電気光学装置 |
| JP5848918B2 (ja) | 2010-09-03 | 2016-01-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5667868B2 (ja) * | 2010-12-24 | 2015-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63313866A (ja) * | 1987-06-17 | 1988-12-21 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH04277721A (ja) * | 1991-03-06 | 1992-10-02 | Seikosha Co Ltd | 薄膜パターンの形成方法 |
| JPH0613474A (ja) * | 1992-06-26 | 1994-01-21 | Nippon Steel Corp | 半導体装置の製造方法 |
| JPH0822983A (ja) * | 1994-07-05 | 1996-01-23 | Citizen Watch Co Ltd | 半導体装置の製造方法 |
| JPH09127707A (ja) * | 1995-10-30 | 1997-05-16 | Casio Comput Co Ltd | レジストパターンの形成方法 |
| JP3214321B2 (ja) * | 1995-11-03 | 2001-10-02 | トヨタ自動車株式会社 | 薄膜トランジスタ及びその製造方法 |
| JP5105811B2 (ja) * | 2005-10-14 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7994000B2 (en) * | 2007-02-27 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
-
2009
- 2009-05-29 JP JP2009130819A patent/JP5514474B2/ja not_active Expired - Fee Related
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