JP5514474B2 - 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 - Google Patents

薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 Download PDF

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JP5514474B2
JP5514474B2 JP2009130819A JP2009130819A JP5514474B2 JP 5514474 B2 JP5514474 B2 JP 5514474B2 JP 2009130819 A JP2009130819 A JP 2009130819A JP 2009130819 A JP2009130819 A JP 2009130819A JP 5514474 B2 JP5514474 B2 JP 5514474B2
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semiconductor
conductive
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JP2010278320A (ja
JP2010278320A5 (enExample
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隆文 溝口
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Semiconductor Energy Laboratory Co Ltd
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JP2009130819A 2009-05-29 2009-05-29 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 Expired - Fee Related JP5514474B2 (ja)

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JP2010278320A JP2010278320A (ja) 2010-12-09
JP2010278320A5 JP2010278320A5 (enExample) 2012-06-21
JP5514474B2 true JP5514474B2 (ja) 2014-06-04

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JP5563888B2 (ja) * 2010-05-12 2014-07-30 三菱電機株式会社 薄膜トランジスタとその製造方法、アクティブマトリックス基板、及び電気光学装置
JP5848918B2 (ja) 2010-09-03 2016-01-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5667868B2 (ja) * 2010-12-24 2015-02-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63313866A (ja) * 1987-06-17 1988-12-21 Seiko Epson Corp 半導体装置の製造方法
JPH04277721A (ja) * 1991-03-06 1992-10-02 Seikosha Co Ltd 薄膜パターンの形成方法
JPH0613474A (ja) * 1992-06-26 1994-01-21 Nippon Steel Corp 半導体装置の製造方法
JPH0822983A (ja) * 1994-07-05 1996-01-23 Citizen Watch Co Ltd 半導体装置の製造方法
JPH09127707A (ja) * 1995-10-30 1997-05-16 Casio Comput Co Ltd レジストパターンの形成方法
JP3214321B2 (ja) * 1995-11-03 2001-10-02 トヨタ自動車株式会社 薄膜トランジスタ及びその製造方法
JP5105811B2 (ja) * 2005-10-14 2012-12-26 株式会社半導体エネルギー研究所 表示装置
US7994000B2 (en) * 2007-02-27 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

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