JP5514474B2 - 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 - Google Patents
薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 Download PDFInfo
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- JP5514474B2 JP5514474B2 JP2009130819A JP2009130819A JP5514474B2 JP 5514474 B2 JP5514474 B2 JP 5514474B2 JP 2009130819 A JP2009130819 A JP 2009130819A JP 2009130819 A JP2009130819 A JP 2009130819A JP 5514474 B2 JP5514474 B2 JP 5514474B2
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- resist mask
- film
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- semiconductor
- conductive
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- 239000004065 semiconductor Substances 0.000 title claims description 317
- 238000000034 method Methods 0.000 title claims description 150
- 239000010409 thin film Substances 0.000 title claims description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 72
- 239000010408 film Substances 0.000 claims description 517
- 239000012535 impurity Substances 0.000 claims description 125
- 238000005530 etching Methods 0.000 claims description 67
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 238000004380 ashing Methods 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 14
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 320
- 239000000758 substrate Substances 0.000 description 50
- 239000000463 material Substances 0.000 description 48
- 238000001312 dry etching Methods 0.000 description 41
- 238000000206 photolithography Methods 0.000 description 40
- 238000005229 chemical vapour deposition Methods 0.000 description 32
- 238000004544 sputter deposition Methods 0.000 description 32
- 230000007261 regionalization Effects 0.000 description 31
- 239000007789 gas Substances 0.000 description 26
- 238000001039 wet etching Methods 0.000 description 19
- 239000013078 crystal Substances 0.000 description 18
- 239000011241 protective layer Substances 0.000 description 18
- 239000004020 conductor Substances 0.000 description 13
- 239000011810 insulating material Substances 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000255777 Lepidoptera Species 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
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- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009130819A JP5514474B2 (ja) | 2009-05-29 | 2009-05-29 | 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009130819A JP5514474B2 (ja) | 2009-05-29 | 2009-05-29 | 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010278320A JP2010278320A (ja) | 2010-12-09 |
| JP2010278320A5 JP2010278320A5 (enExample) | 2012-06-21 |
| JP5514474B2 true JP5514474B2 (ja) | 2014-06-04 |
Family
ID=43424995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009130819A Expired - Fee Related JP5514474B2 (ja) | 2009-05-29 | 2009-05-29 | 薄膜トランジスタの作製方法、不揮発性半導体記憶素子の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5514474B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5563888B2 (ja) * | 2010-05-12 | 2014-07-30 | 三菱電機株式会社 | 薄膜トランジスタとその製造方法、アクティブマトリックス基板、及び電気光学装置 |
| JP5848918B2 (ja) | 2010-09-03 | 2016-01-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5667868B2 (ja) * | 2010-12-24 | 2015-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63313866A (ja) * | 1987-06-17 | 1988-12-21 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH04277721A (ja) * | 1991-03-06 | 1992-10-02 | Seikosha Co Ltd | 薄膜パターンの形成方法 |
| JPH0613474A (ja) * | 1992-06-26 | 1994-01-21 | Nippon Steel Corp | 半導体装置の製造方法 |
| JPH0822983A (ja) * | 1994-07-05 | 1996-01-23 | Citizen Watch Co Ltd | 半導体装置の製造方法 |
| JPH09127707A (ja) * | 1995-10-30 | 1997-05-16 | Casio Comput Co Ltd | レジストパターンの形成方法 |
| JP3214321B2 (ja) * | 1995-11-03 | 2001-10-02 | トヨタ自動車株式会社 | 薄膜トランジスタ及びその製造方法 |
| JP5105811B2 (ja) * | 2005-10-14 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7994000B2 (en) * | 2007-02-27 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
-
2009
- 2009-05-29 JP JP2009130819A patent/JP5514474B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2010278320A (ja) | 2010-12-09 |
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