CN101819931B - 制造半导体装置的方法 - Google Patents

制造半导体装置的方法 Download PDF

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Publication number
CN101819931B
CN101819931B CN201010119463.1A CN201010119463A CN101819931B CN 101819931 B CN101819931 B CN 101819931B CN 201010119463 A CN201010119463 A CN 201010119463A CN 101819931 B CN101819931 B CN 101819931B
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CN
China
Prior art keywords
make
semiconductor device
silicide layer
water
film
Prior art date
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Expired - Fee Related
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CN201010119463.1A
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English (en)
Chinese (zh)
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CN101819931A (zh
Inventor
中山知士
笠间佳子
藤仓荣一
菊池敦志
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN101819931A publication Critical patent/CN101819931A/zh
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Publication of CN101819931B publication Critical patent/CN101819931B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201010119463.1A 2009-02-27 2010-02-23 制造半导体装置的方法 Expired - Fee Related CN101819931B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-046801 2009-02-27
JP2009046801A JP2010205782A (ja) 2009-02-27 2009-02-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN101819931A CN101819931A (zh) 2010-09-01
CN101819931B true CN101819931B (zh) 2013-02-13

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Family Applications (1)

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CN201010119463.1A Expired - Fee Related CN101819931B (zh) 2009-02-27 2010-02-23 制造半导体装置的方法

Country Status (3)

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US (1) US8293653B2 (enExample)
JP (1) JP2010205782A (enExample)
CN (1) CN101819931B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5326113B2 (ja) * 2009-06-25 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置の洗浄方法
US8784572B2 (en) 2011-10-19 2014-07-22 Intermolecular, Inc. Method for cleaning platinum residues on a semiconductor substrate
US8697573B2 (en) 2011-11-09 2014-04-15 Intermolecular, Inc. Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating
FR3013502A1 (fr) 2013-11-20 2015-05-22 Commissariat Energie Atomique Procede de protection d’une couche de siliciure
US9865466B2 (en) * 2015-09-25 2018-01-09 Applied Materials, Inc. Silicide phase control by confinement
CN114005831B (zh) * 2021-10-28 2024-03-22 上海华力微电子有限公司 一种改善NAND flash字线间漏电的工艺集成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1113034A (zh) * 1994-03-25 1995-12-06 日本电气株式会社 具有用于阳极和阴极分别再生的反馈通道的湿法处理设备
JPH09155998A (ja) 1995-12-08 1997-06-17 Dainippon Printing Co Ltd 包装用材料およびそれを使用した押し出しラミネ−トチュ−ブ
CN1228197A (zh) * 1996-08-20 1999-09-08 奥加诺株式会社 清洗电子元件构件或类似零件的方法和装置
CN1501448A (zh) * 2002-11-19 2004-06-02 台湾积体电路制造股份有限公司 制作接触孔于硅化镍层上方的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111979B2 (ja) * 1998-05-20 2000-11-27 日本電気株式会社 ウエハの洗浄方法
KR100389917B1 (ko) * 2000-09-06 2003-07-04 삼성전자주식회사 산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수
JP2002305177A (ja) * 2001-02-01 2002-10-18 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4046486B2 (ja) * 2001-06-13 2008-02-13 Ｎｅｃエレクトロニクス株式会社 洗浄水及びウエハの洗浄方法
JP3667273B2 (ja) * 2001-11-02 2005-07-06 Ｎｅｃエレクトロニクス株式会社 洗浄方法および洗浄液
JP3680063B2 (ja) * 2002-03-12 2005-08-10 株式会社東芝 半導体装置の製造方法
JP3828511B2 (ja) * 2003-06-26 2006-10-04 株式会社東芝 半導体装置の製造方法
JP2005085981A (ja) * 2003-09-09 2005-03-31 Matsushita Electric Ind Co Ltd 電子デバイスの製造方法及び洗浄方法
JP2005183937A (ja) * 2003-11-25 2005-07-07 Nec Electronics Corp 半導体装置の製造方法およびレジスト除去用洗浄装置
JP2006024823A (ja) * 2004-07-09 2006-01-26 Casio Comput Co Ltd レジスト除去方法
JP4917328B2 (ja) 2006-02-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008198935A (ja) * 2007-02-15 2008-08-28 Sony Corp 絶縁ゲート電界効果トランジスタの製造方法。

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1113034A (zh) * 1994-03-25 1995-12-06 日本电气株式会社 具有用于阳极和阴极分别再生的反馈通道的湿法处理设备
JPH09155998A (ja) 1995-12-08 1997-06-17 Dainippon Printing Co Ltd 包装用材料およびそれを使用した押し出しラミネ−トチュ−ブ
CN1228197A (zh) * 1996-08-20 1999-09-08 奥加诺株式会社 清洗电子元件构件或类似零件的方法和装置
CN1501448A (zh) * 2002-11-19 2004-06-02 台湾积体电路制造股份有限公司 制作接触孔于硅化镍层上方的方法

Also Published As

Publication number Publication date
JP2010205782A (ja) 2010-09-16
US20100221912A1 (en) 2010-09-02
CN101819931A (zh) 2010-09-01
US8293653B2 (en) 2012-10-23

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