JP2006066621A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 75
- 238000001039 wet etching Methods 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
- 125000004429 atom Chemical group 0.000 claims abstract description 15
- 238000002407 reforming Methods 0.000 claims abstract description 11
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 88
- 239000007789 gas Substances 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 74
- 238000005530 etching Methods 0.000 claims description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 24
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 17
- 229910001882 dioxygen Inorganic materials 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 238000001312 dry etching Methods 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 69
- 239000010703 silicon Substances 0.000 abstract description 69
- 238000012545 processing Methods 0.000 abstract description 21
- 230000004075 alteration Effects 0.000 abstract description 4
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 118
- 230000008569 process Effects 0.000 description 52
- 238000009792 diffusion process Methods 0.000 description 29
- -1 oxygen ions Chemical class 0.000 description 26
- 238000002474 experimental method Methods 0.000 description 18
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 11
- 238000002513 implantation Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 238000006057 reforming reaction Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910020177 SiOF Inorganic materials 0.000 description 3
- 229910020175 SiOH Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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Abstract
【解決手段】 前記変質層を、酸素ラジカルに、前記半導体表面のSi原子に結合してSi原子と酸素原子との間の二重結合の形成を阻害するような元素の活性種を添加して改質し、形成された改質層をウェットエッチングにより除去する。
【選択図】 図9
Description
図8は、本発明で使われるダウンフロープラズマ処理装置40の構成を示す。
[第2実施例]
図11(A)〜15(J)は、本発明の第2実施例による半導体装置80の製造工程を、pチャネルMOSトランジスタを形成する場合を例に示す図である。
[第3実施例]
図19(A)〜図20(D)は、本発明の第3実施例によるコンタクトホールの形成工程を示す。
半導体表面に形成された炭素を含む変質層を、酸素ラジカルに曝露することにより改質し、改質層を形成する工程と、
前記改質層をウェットエッチングにより除去する工程と
を含む半導体装置の製造方法であって、
前記改質工程は、酸素ラジカルに、前記半導体表面のSi原子に結合してSi原子と酸素原子との間の二重結合の形成を阻害するような元素の活性種を添加して実行されることを特徴とする半導体装置の製造方法。
前記半導体表面はSi原子を含み、前記変質層は、SiCを含むことを特徴とする付記1記載の半導体装置の製造方法。
前記半導体表面は、シリコン基板表面であることを特徴とする付記1または2記載の半導体装置の製造方法。
前記半導体表面は、ポリシリコン膜表面であることを特徴とする付記1または2記載の半導体装置の製造方法。
前記改質工程は、前記変質層のエッチングが実質的に生じないような条件で実行されることを特徴とする付記1〜4のうち、いずれか一項記載の半導体装置の製造方法。
前記元素は、水素およびハロゲンよりなる群から選択されることを特徴とする付記1〜5のうち、いずれか一項記載の半導体装置の製造方法。
前記元素は、水素またはフッ素よりなることを特徴とする付記1〜6のうち、いずれか一項記載の半導体装置の製造方法。
前記酸素ラジカルは、酸素ガスをプラズマにより励起することで形成され、
前記フッ素の活性種は、フロロカーボンガスまたはSF6ガスを前記プラズマにより励起することにより供給されることを特徴とする付記7記載の半導体装置の製造方法。
前記フロロカーボンガスは、CF4を含むことを特徴とする付記9記載の半導体装置の製造方法。
前記改質工程は、前記半導体表面を有する半導体基板に、基板バイアスを印加することなく実行されることを特徴とする付記1〜9のうち、いずれか一項記載の半導体装置の製造方法。
絶縁膜を、フルオロカーボンガスをエッチングガスとして使うドライエッチング法により除去することにより、前記絶縁膜が覆っている半導体表面を露出する工程と、
前記半導体表面に、前記ドライエッチング工程により形成された炭素を含む変質層を、酸素ラジカルに曝露することにより改質し、改質層を形成する工程と、
前記改質層をウェットエッチングにより除去する工程と
を含む半導体装置の製造方法であって、
前記改質工程は付記1〜10のうち、いずれか一項に記載の方法により実行されることを特徴とする半導体装置の製造方法。
半導体表面上に形成されたポリシリコンゲート電極を覆うように前記半導体表面上に絶縁膜を形成する工程と、
前記絶縁膜を、前記半導体表面が露出するように、また前記ポリシリコンゲート電極の上面が露出するように、フルオロカーボンガスをエッチングガスとして使うドライエッチング法によりエッチバックし、前記ポリシリコンゲート電極の両側壁面に側壁絶縁膜を形成する工程と、
前記半導体表面に前記エッチバック工程の際に形成された、炭素を含む変質層を、酸素ラジカルに曝露することにより改質し、改質層を形成する工程と、
前記改質層をウェットエッチングにより除去する工程と
を含む半導体装置の製造方法であって、
前記改質工程は付記1〜10のうち、いずれか一項に記載の方法により実行されることを特徴とする半導体装置の製造方法。
前記ゲート電極は、90nm以下のゲート長を有することを特徴とする付記12記載の半導体装置の製造方法。
前記ウェットエッチング工程の後、前記半導体表面に不純物元素をイオン注入する工程を特徴とする付記1〜13のうち、いずれか一項記載の半導体装置の製造方法。
前記ウェットエッチング工程の後、前記半導体表面にシリサイド層を形成する工程を有することを特徴とする付記1〜14のうち、いずれか一項記載の半導体装置の製造方法。
半導体基板と、
前記半導体基板の主表面上にゲート絶縁膜を介して形成されたゲート電極と、
前記ゲート電極の両側に形成されたソース/ドレイン領域と、
前記ゲート電極の両側面上に形成された側壁絶縁膜のさらに両側に形成された段差とを有し、
前記段差が5nm以下であることを特徴とする半導体装置。
さらに、前記ソース/ドレイン領域および前記ゲート電極上にシリサイド層を有し、
前記段差は、前記シリサイド層の下にSiCを含まない深さまでエッチングしてなることを特徴とする請求項16記載の半導体装置。
前記段差は、ウェットエッチングにより形成されてなることを特徴とする請求項16または17記載の半導体装置。
前記ゲート電極は、90nm以下のゲート長を有することを特徴とする請求項16〜18記載の半導体装置。
11a,101a 拡散領域
11b,101b 変質層
101c 改質層
12,102 層間絶縁膜
12A,102A コンタクトホール
12x,102x 絶縁膜残渣
13,103 レジスト膜
13A,103A レジスト開口部
14,104 コンタクトプラグ
14A,104A 密着/拡散防止膜
21 シリコン基板
21G 段差部
21a,21b 拡散領域
22 ゲート絶縁膜
23 ポリシリコンゲート電極
24 絶縁膜
24A,24B 側壁絶縁膜
24x 絶縁膜残渣
25 変質層
40 プラズマ処理装置
41 処理容器
41A 基板保持台
41B,41C 排気ポート
41D 絶縁部
43 シャワーヘッド
43A 石英シャワーヘッド本体
44A〜44E ガスライン
45 マイクロ波源
46 高周波源
60 シリコン基板
61 変質層
61A 改質層
81 シリコン基板
81A 素子領域
81B 素子分離絶縁膜
81G 段差部
81a,81b ソース・ドレインエクステンション拡散領域
81c,81d ソース・ドレイン拡散領域
81p ポケット注入領域
82 ゲート絶縁膜
83 ポリシリコンゲート電極
84 絶縁膜
84A,84B 側壁絶縁膜
85 変質層
85A 改質層
86 シリサイド層
87 層間絶縁膜
87A,87B コンタクトホール
88A,88B コンタクトプラグ
Claims (10)
- 半導体表面に形成された炭素を含む変質層を、酸素ラジカルに曝露することにより改質し、改質層を形成する工程と、
前記改質層をウェットエッチングにより除去する工程と
を含む半導体装置の製造方法であって、
前記改質工程は、酸素ラジカルに、前記半導体表面のSi原子に結合してSi原子と酸素原子との間の二重結合の形成を阻害するような元素の活性種を添加して実行されることを特徴とする半導体装置の製造方法。 - 前記半導体表面はSi原子を含み、前記変質層は、SiCを含むことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記元素は、水素およびハロゲンよりなる群から選択されることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記元素は、水素またはフッ素よりなることを特徴とする請求項1〜3のうち、いずれか一項記載の半導体装置の製造方法。
- 前記酸素ラジカルは、酸素ガスをプラズマにより励起することで形成され、
前記フッ素の活性種は、フロロカーボンガスまたはSF6を前記プラズマにより励起することにより供給されることを特徴とする請求項4記載の半導体装置の製造方法。 - 半導体表面上に形成されたポリシリコンゲート電極を覆うように前記半導体表面上に絶縁膜を形成する工程と、
前記絶縁膜を、前記半導体表面が露出するように、また前記ポリシリコンゲート電極の上面が露出するように、フルオロカーボンガスをエッチングガスとして使うドライエッチング法によりエッチバックし、前記ポリシリコンゲート電極の両側壁面に側壁絶縁膜を形成する工程と、
前記半導体表面に前記エッチバック工程の際に形成された、炭素を含む変質層を、酸素ラジカルに曝露することにより改質し、改質層を形成する工程と、
前記改質層をウェットエッチングにより除去する工程と
を含む半導体装置の製造方法であって、
前記改質工程は請求項1〜5のうち、いずれか一項に記載の方法により実行されることを特徴とする半導体装置の製造方法。 - 半導体基板と、
前記半導体基板の主表面上にゲート絶縁膜を介して形成されたゲート電極と、
前記ゲート電極の両側に形成されたソース/ドレイン領域と、
前記ゲート電極の両側面上に形成された側壁絶縁膜のさらに両側に形成された段差とを有し、
前記段差が5nm以下であることを特徴とする半導体装置。 - さらに、前記ソース/ドレイン領域および前記ゲート電極上にシリサイド層を有し、
前記段差は、前記シリサイド層の下にSiCを含まない深さまでエッチングしてなることを特徴とする請求項7記載の半導体装置。 - 前記段差は、ウェットエッチングにより形成されてなることを特徴とする請求項7または8記載の半導体装置。
- 前記ゲート電極は、90nm以下のゲート長を有することを特徴とする請求項7〜10記載の半導体装置。
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