JP2016129221A5 - - Google Patents
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- Publication number
- JP2016129221A5 JP2016129221A5 JP2015234383A JP2015234383A JP2016129221A5 JP 2016129221 A5 JP2016129221 A5 JP 2016129221A5 JP 2015234383 A JP2015234383 A JP 2015234383A JP 2015234383 A JP2015234383 A JP 2015234383A JP 2016129221 A5 JP2016129221 A5 JP 2016129221A5
- Authority
- JP
- Japan
- Prior art keywords
- slurry
- cmp
- protective layer
- etching process
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 22
- 239000002002 slurry Substances 0.000 claims 15
- 239000011241 protective layer Substances 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 7
- 239000010410 layer Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000008119 colloidal silica Substances 0.000 claims 4
- 230000007547 defect Effects 0.000 claims 4
- 230000002950 deficient Effects 0.000 claims 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 229910019093 NaOCl Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- 150000002978 peroxides Chemical class 0.000 claims 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 150000007513 acids Chemical class 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/556,337 US9431261B2 (en) | 2014-12-01 | 2014-12-01 | Removal of defects by in-situ etching during chemical-mechanical polishing processing |
| US14/556,337 | 2014-12-01 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016129221A JP2016129221A (ja) | 2016-07-14 |
| JP2016129221A5 true JP2016129221A5 (enExample) | 2017-05-18 |
| JP6151340B2 JP6151340B2 (ja) | 2017-06-21 |
Family
ID=54542064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015234383A Active JP6151340B2 (ja) | 2014-12-01 | 2015-12-01 | 化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9431261B2 (enExample) |
| EP (2) | EP3029717A1 (enExample) |
| JP (1) | JP6151340B2 (enExample) |
| TW (1) | TWI680508B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121013326A (zh) * | 2024-05-22 | 2025-11-25 | 长鑫科技集团股份有限公司 | 半导体结构的制作方法以及半导体结构 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031163A (ja) | 1998-07-13 | 2000-01-28 | Denso Corp | 半導体装置及びその製造方法 |
| KR100343136B1 (ko) * | 1999-03-18 | 2002-07-05 | 윤종용 | 이중 연마저지층을 이용한 화학기계적 연마방법 |
| US6417109B1 (en) * | 2000-07-26 | 2002-07-09 | Aiwa Co., Ltd. | Chemical-mechanical etch (CME) method for patterned etching of a substrate surface |
| US7528075B2 (en) | 2004-02-25 | 2009-05-05 | Hrl Laboratories, Llc | Self-masking defect removing method |
| JP4759298B2 (ja) * | 2005-03-30 | 2011-08-31 | 株式会社フジミインコーポレーテッド | 単結晶表面用の研磨剤及び研磨方法 |
| DE102007019565A1 (de) | 2007-04-25 | 2008-09-04 | Siltronic Ag | Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
| RU2605941C2 (ru) | 2011-08-01 | 2016-12-27 | Басф Се | СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА Si1-x Gex В ПРИСУТСТВИИ ХМП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ |
| JP6050934B2 (ja) | 2011-11-08 | 2016-12-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| FR2994615A1 (fr) * | 2012-08-14 | 2014-02-21 | Commissariat Energie Atomique | Procede de planarisation d'une couche epitaxiee |
-
2014
- 2014-12-01 US US14/556,337 patent/US9431261B2/en active Active
-
2015
- 2015-11-12 EP EP15194346.1A patent/EP3029717A1/en not_active Ceased
- 2015-11-12 EP EP23168320.2A patent/EP4235751A3/en active Pending
- 2015-12-01 JP JP2015234383A patent/JP6151340B2/ja active Active
- 2015-12-01 TW TW104140023A patent/TWI680508B/zh active
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