TWI680508B - 於化學機械硏磨處理期間藉由原地蝕刻移除缺陷 - Google Patents

於化學機械硏磨處理期間藉由原地蝕刻移除缺陷 Download PDF

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Publication number
TWI680508B
TWI680508B TW104140023A TW104140023A TWI680508B TW I680508 B TWI680508 B TW I680508B TW 104140023 A TW104140023 A TW 104140023A TW 104140023 A TW104140023 A TW 104140023A TW I680508 B TWI680508 B TW I680508B
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TW
Taiwan
Prior art keywords
slurry
protective layer
layer
cmp
etchant
Prior art date
Application number
TW104140023A
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English (en)
Chinese (zh)
Other versions
TW201631652A (zh
Inventor
史考特Ｂ 辛格爾
Scott B. Singer
喬瑟夫Ｃ 波斯維特
Joseph C. Boisvert
丹尼爾Ｃ 羅
Daniel C. Law
克里斯多福Ｍ 費策
Christopher M. Fetzer
Original Assignee
美商波音公司
The Boeing Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商波音公司, The Boeing Company filed Critical 美商波音公司
Publication of TW201631652A publication Critical patent/TW201631652A/zh
Application granted granted Critical
Publication of TWI680508B publication Critical patent/TWI680508B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104140023A 2014-12-01 2015-12-01 於化學機械硏磨處理期間藉由原地蝕刻移除缺陷 TWI680508B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/556,337 US9431261B2 (en) 2014-12-01 2014-12-01 Removal of defects by in-situ etching during chemical-mechanical polishing processing
US14/556,337 2014-12-01

Publications (2)

Publication Number Publication Date
TW201631652A TW201631652A (zh) 2016-09-01
TWI680508B true TWI680508B (zh) 2019-12-21

Family

ID=54542064

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104140023A TWI680508B (zh) 2014-12-01 2015-12-01 於化學機械硏磨處理期間藉由原地蝕刻移除缺陷

Country Status (4)

Country Link
US (1) US9431261B2 (enExample)
EP (2) EP3029717A1 (enExample)
JP (1) JP6151340B2 (enExample)
TW (1) TWI680508B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121013326A (zh) * 2024-05-22 2025-11-25 长鑫科技集团股份有限公司 半导体结构的制作方法以及半导体结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060218867A1 (en) * 2005-03-30 2006-10-05 Isamu Koshiyama Polishing composition and polishing method using the same
US20090186466A1 (en) * 2004-02-25 2009-07-23 Hrl Laboratories, Llc Self-masking defect removing method
WO2013018015A2 (en) * 2011-08-01 2013-02-07 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
EP2779216A1 (en) * 2011-11-08 2014-09-17 Fujimi Incorporated Polishing composition and polishing method using same, and substrate manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031163A (ja) 1998-07-13 2000-01-28 Denso Corp 半導体装置及びその製造方法
KR100343136B1 (ko) * 1999-03-18 2002-07-05 윤종용 이중 연마저지층을 이용한 화학기계적 연마방법
US6417109B1 (en) * 2000-07-26 2002-07-09 Aiwa Co., Ltd. Chemical-mechanical etch (CME) method for patterned etching of a substrate surface
DE102007019565A1 (de) 2007-04-25 2008-09-04 Siltronic Ag Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
FR2994615A1 (fr) * 2012-08-14 2014-02-21 Commissariat Energie Atomique Procede de planarisation d'une couche epitaxiee

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090186466A1 (en) * 2004-02-25 2009-07-23 Hrl Laboratories, Llc Self-masking defect removing method
US20060218867A1 (en) * 2005-03-30 2006-10-05 Isamu Koshiyama Polishing composition and polishing method using the same
WO2013018015A2 (en) * 2011-08-01 2013-02-07 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
EP2779216A1 (en) * 2011-11-08 2014-09-17 Fujimi Incorporated Polishing composition and polishing method using same, and substrate manufacturing method

Also Published As

Publication number Publication date
EP4235751A3 (en) 2023-11-15
JP6151340B2 (ja) 2017-06-21
EP4235751A2 (en) 2023-08-30
US20160155644A1 (en) 2016-06-02
TW201631652A (zh) 2016-09-01
JP2016129221A (ja) 2016-07-14
US9431261B2 (en) 2016-08-30
EP3029717A1 (en) 2016-06-08

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