JP6151340B2 - 化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去 - Google Patents

化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去 Download PDF

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JP6151340B2
JP6151340B2 JP2015234383A JP2015234383A JP6151340B2 JP 6151340 B2 JP6151340 B2 JP 6151340B2 JP 2015234383 A JP2015234383 A JP 2015234383A JP 2015234383 A JP2015234383 A JP 2015234383A JP 6151340 B2 JP6151340 B2 JP 6151340B2
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slurry
protective layer
layer
cmp
planarization
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JP2016129221A5 (enExample
JP2016129221A (ja
Inventor
スコット ビー． シンジャー，
スコット ビー． シンジャー，
ジョセフ シー． ボワヴェール，
ジョセフ シー． ボワヴェール，
ダニエル シー． ロー，
ダニエル シー． ロー，
クリストファー エム． フェッツァー，
クリストファー エム． フェッツァー，
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Boeing Co
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Boeing Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2015234383A 2014-12-01 2015-12-01 化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去 Active JP6151340B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/556,337 US9431261B2 (en) 2014-12-01 2014-12-01 Removal of defects by in-situ etching during chemical-mechanical polishing processing
US14/556,337 2014-12-01

Publications (3)

Publication Number Publication Date
JP2016129221A JP2016129221A (ja) 2016-07-14
JP2016129221A5 JP2016129221A5 (enExample) 2017-05-18
JP6151340B2 true JP6151340B2 (ja) 2017-06-21

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JP2015234383A Active JP6151340B2 (ja) 2014-12-01 2015-12-01 化学機械研磨加工の間のインシトゥエッチングによる欠陥の除去

Country Status (4)

Country Link
US (1) US9431261B2 (enExample)
EP (2) EP3029717A1 (enExample)
JP (1) JP6151340B2 (enExample)
TW (1) TWI680508B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121013326A (zh) * 2024-05-22 2025-11-25 长鑫科技集团股份有限公司 半导体结构的制作方法以及半导体结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031163A (ja) 1998-07-13 2000-01-28 Denso Corp 半導体装置及びその製造方法
KR100343136B1 (ko) * 1999-03-18 2002-07-05 윤종용 이중 연마저지층을 이용한 화학기계적 연마방법
US6417109B1 (en) * 2000-07-26 2002-07-09 Aiwa Co., Ltd. Chemical-mechanical etch (CME) method for patterned etching of a substrate surface
US7528075B2 (en) 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
JP4759298B2 (ja) * 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
DE102007019565A1 (de) 2007-04-25 2008-09-04 Siltronic Ag Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
RU2605941C2 (ru) 2011-08-01 2016-12-27 Басф Се СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА Si1-x Gex В ПРИСУТСТВИИ ХМП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ
JP6050934B2 (ja) 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
FR2994615A1 (fr) * 2012-08-14 2014-02-21 Commissariat Energie Atomique Procede de planarisation d'une couche epitaxiee

Also Published As

Publication number Publication date
EP4235751A3 (en) 2023-11-15
EP4235751A2 (en) 2023-08-30
US20160155644A1 (en) 2016-06-02
TW201631652A (zh) 2016-09-01
JP2016129221A (ja) 2016-07-14
US9431261B2 (en) 2016-08-30
EP3029717A1 (en) 2016-06-08
TWI680508B (zh) 2019-12-21

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