CN105304480B - 锗的干法刻蚀方法 - Google Patents
锗的干法刻蚀方法 Download PDFInfo
- Publication number
- CN105304480B CN105304480B CN201410231370.6A CN201410231370A CN105304480B CN 105304480 B CN105304480 B CN 105304480B CN 201410231370 A CN201410231370 A CN 201410231370A CN 105304480 B CN105304480 B CN 105304480B
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- CN
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- Prior art keywords
- germanium
- plasma
- layer
- plasma treatment
- germanium layer
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 63
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000001312 dry etching Methods 0.000 title claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000460 chlorine Substances 0.000 claims abstract description 11
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 11
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000009832 plasma treatment Methods 0.000 claims description 32
- 238000012545 processing Methods 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000012805 post-processing Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 10
- 125000001309 chloro group Chemical group Cl* 0.000 abstract 2
- 238000003851 corona treatment Methods 0.000 abstract 2
- 230000008569 process Effects 0.000 description 11
- 238000004380 ashing Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410231370.6A CN105304480B (zh) | 2014-05-29 | 2014-05-29 | 锗的干法刻蚀方法 |
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CN201410231370.6A CN105304480B (zh) | 2014-05-29 | 2014-05-29 | 锗的干法刻蚀方法 |
Publications (2)
Publication Number | Publication Date |
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CN105304480A CN105304480A (zh) | 2016-02-03 |
CN105304480B true CN105304480B (zh) | 2019-11-22 |
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CN201410231370.6A Active CN105304480B (zh) | 2014-05-29 | 2014-05-29 | 锗的干法刻蚀方法 |
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Country | Link |
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CN (1) | CN105304480B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465369B (zh) * | 2014-12-30 | 2017-10-10 | 上海华虹宏力半导体制造有限公司 | 锗的刻蚀方法 |
CN106865488B (zh) * | 2017-02-08 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | 锗层图形化方法及硅基mems运动传感器的制造方法 |
CN109031496A (zh) * | 2018-07-19 | 2018-12-18 | 深圳市华星光电技术有限公司 | 一种纳米金属光栅的制作方法及纳米金属光栅 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7591201B1 (en) * | 2007-03-09 | 2009-09-22 | Silicon Clocks, Inc. | MEMS structure having a compensated resonating member |
CN104541370A (zh) * | 2012-07-09 | 2015-04-22 | 桑迪士克科技股份有限公司 | 三维nand 装置和电荷捕获层分开以及在nand 装置中浮动栅极形成的方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7829465B2 (en) * | 2006-08-09 | 2010-11-09 | Shouliang Lai | Method for plasma etching of positively sloped structures |
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2014
- 2014-05-29 CN CN201410231370.6A patent/CN105304480B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7591201B1 (en) * | 2007-03-09 | 2009-09-22 | Silicon Clocks, Inc. | MEMS structure having a compensated resonating member |
CN104541370A (zh) * | 2012-07-09 | 2015-04-22 | 桑迪士克科技股份有限公司 | 三维nand 装置和电荷捕获层分开以及在nand 装置中浮动栅极形成的方法 |
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CN105304480A (zh) | 2016-02-03 |
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Address after: 200000 room 307, 3 / F, No. 1328, Dingxi Road, Jiading District, Shanghai Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: 201815 room 3157, building 3, No. 1368, Xingxian Road, Jiading District, Shanghai Patentee before: Shanghai Silicon Technology Co.,Ltd. |
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Address after: 200000 room 307, floor 3, No. 1328, Dingxi Road, Changning District, Shanghai Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: 200000 room 307, 3 / F, No. 1328, Dingxi Road, Jiading District, Shanghai Patentee before: Shanghai Sirui Technology Co.,Ltd. |