JP7209155B2 - デザイナー原子層エッチング - Google Patents

デザイナー原子層エッチング Download PDF

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JP7209155B2
JP7209155B2 JP2019533041A JP2019533041A JP7209155B2 JP 7209155 B2 JP7209155 B2 JP 7209155B2 JP 2019533041 A JP2019533041 A JP 2019533041A JP 2019533041 A JP2019533041 A JP 2019533041A JP 7209155 B2 JP7209155 B2 JP 7209155B2
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substrate
gas
energy
ale
temperature
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JP2020502811A (ja
JP2020502811A5 (enExample
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カナリク・ケレン・ジェイコブス
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Lam Research Corp
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Lam Research Corp
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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    • H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
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    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2019533041A 2016-12-19 2017-12-14 デザイナー原子層エッチング Active JP7209155B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022155681A JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662436286P 2016-12-19 2016-12-19
US62/436,286 2016-12-19
US201762532916P 2017-07-14 2017-07-14
US62/532,916 2017-07-14
US15/841,205 2017-12-13
US15/841,205 US10566212B2 (en) 2016-12-19 2017-12-13 Designer atomic layer etching
PCT/US2017/066470 WO2018118655A1 (en) 2016-12-19 2017-12-14 Designer atomic layer etching

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022155681A Division JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

Publications (3)

Publication Number Publication Date
JP2020502811A JP2020502811A (ja) 2020-01-23
JP2020502811A5 JP2020502811A5 (enExample) 2021-01-28
JP7209155B2 true JP7209155B2 (ja) 2023-01-20

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JP2022155681A Active JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

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US (4) US10566212B2 (enExample)
JP (2) JP7209155B2 (enExample)
KR (4) KR20250005482A (enExample)
CN (2) CN110741462B (enExample)
TW (2) TWI832325B (enExample)
WO (1) WO2018118655A1 (enExample)

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US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10566212B2 (en) * 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP6936700B2 (ja) 2017-10-31 2021-09-22 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法
JP6976352B2 (ja) * 2017-12-15 2021-12-08 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
US10998170B2 (en) * 2018-04-13 2021-05-04 Tokyo Electron Limited Method for ion mass separation and ion energy control in process plasmas
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
US20220130705A1 (en) * 2019-02-22 2022-04-28 Lam Research Corporation Electrostatic chuck with powder coating
US10937659B2 (en) * 2019-04-09 2021-03-02 Tokyo Electron Limited Method of anisotropically etching adjacent lines with multi-color selectivity
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