JP7209155B2 - デザイナー原子層エッチング - Google Patents

デザイナー原子層エッチング Download PDF

Info

Publication number
JP7209155B2
JP7209155B2 JP2019533041A JP2019533041A JP7209155B2 JP 7209155 B2 JP7209155 B2 JP 7209155B2 JP 2019533041 A JP2019533041 A JP 2019533041A JP 2019533041 A JP2019533041 A JP 2019533041A JP 7209155 B2 JP7209155 B2 JP 7209155B2
Authority
JP
Japan
Prior art keywords
substrate
gas
energy
ale
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019533041A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020502811A (ja
JP2020502811A5 (enExample
Inventor
カナリク・ケレン・ジェイコブス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2020502811A publication Critical patent/JP2020502811A/ja
Publication of JP2020502811A5 publication Critical patent/JP2020502811A5/ja
Priority to JP2022155681A priority Critical patent/JP7320168B2/ja
Application granted granted Critical
Publication of JP7209155B2 publication Critical patent/JP7209155B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H10P50/267—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H10P14/6336—
    • H10P14/6339—
    • H10P50/242—
    • H10P50/246—
    • H10P50/269—
    • H10P50/283—
    • H10P50/285—
    • H10P72/0418—
    • H10P72/0421—
    • H10P72/0432—
    • H10P72/0434—
    • H10P72/0468—
    • H10P72/0606—
    • H10P72/72—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
JP2019533041A 2016-12-19 2017-12-14 デザイナー原子層エッチング Active JP7209155B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022155681A JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662436286P 2016-12-19 2016-12-19
US62/436,286 2016-12-19
US201762532916P 2017-07-14 2017-07-14
US62/532,916 2017-07-14
US15/841,205 US10566212B2 (en) 2016-12-19 2017-12-13 Designer atomic layer etching
US15/841,205 2017-12-13
PCT/US2017/066470 WO2018118655A1 (en) 2016-12-19 2017-12-14 Designer atomic layer etching

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022155681A Division JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

Publications (3)

Publication Number Publication Date
JP2020502811A JP2020502811A (ja) 2020-01-23
JP2020502811A5 JP2020502811A5 (enExample) 2021-01-28
JP7209155B2 true JP7209155B2 (ja) 2023-01-20

Family

ID=62556881

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019533041A Active JP7209155B2 (ja) 2016-12-19 2017-12-14 デザイナー原子層エッチング
JP2022155681A Active JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022155681A Active JP7320168B2 (ja) 2016-12-19 2022-09-29 デザイナー原子層エッチング

Country Status (6)

Country Link
US (4) US10566212B2 (enExample)
JP (2) JP7209155B2 (enExample)
KR (4) KR102589704B1 (enExample)
CN (2) CN118610084A (enExample)
TW (2) TWI811199B (enExample)
WO (1) WO2018118655A1 (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP6936700B2 (ja) 2017-10-31 2021-09-22 株式会社日立ハイテク 半導体製造装置及び半導体装置の製造方法
US11120999B2 (en) * 2017-12-15 2021-09-14 Tokyo Electron Limited Plasma etching method
CN111937122A (zh) 2018-03-30 2020-11-13 朗姆研究公司 难熔金属和其他高表面结合能材料的原子层蚀刻和平滑化
US10998170B2 (en) * 2018-04-13 2021-05-04 Tokyo Electron Limited Method for ion mass separation and ion energy control in process plasmas
WO2020102085A1 (en) 2018-11-14 2020-05-22 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
WO2020172070A1 (en) * 2019-02-22 2020-08-27 Lam Research Corporation Electrostatic chuck with powder coating
US10937659B2 (en) * 2019-04-09 2021-03-02 Tokyo Electron Limited Method of anisotropically etching adjacent lines with multi-color selectivity
KR102801535B1 (ko) * 2019-04-29 2025-04-25 램 리써치 코포레이션 서브트랙티브 (subtractive) 금속 에칭을 위한 원자 층 에칭
TWI848120B (zh) * 2019-06-13 2024-07-11 日商東京威力科創股份有限公司 蝕刻方法以及蝕刻裝置
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
US10790157B1 (en) * 2019-07-16 2020-09-29 University Of Maryland, College Park Achieving etching selectivity for atomic layer etching processes by utilizing material-selective deposition phenomena
KR102141547B1 (ko) * 2019-09-25 2020-09-14 솔브레인 주식회사 박막 제조 방법
KR102156663B1 (ko) * 2019-09-25 2020-09-21 솔브레인 주식회사 박막 제조 방법
JP7189375B2 (ja) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション フォトレジスト接着および線量低減のための下層
US11087989B1 (en) * 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7634642B2 (ja) * 2020-07-19 2025-02-21 アプライド マテリアルズ インコーポレイテッド ホウ素がドープされたシリコン材料を利用した集積プロセス
JP7123100B2 (ja) * 2020-09-24 2022-08-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、およびプログラム
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
WO2022169509A1 (en) 2021-02-03 2022-08-11 Lam Research Corporation Etch selectivity control in atomic layer etching
JP7617769B2 (ja) * 2021-02-25 2025-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2022164060A (ja) * 2021-04-15 2022-10-27 東京エレクトロン株式会社 エッチング方法及び処理装置
US12237174B2 (en) 2021-04-22 2025-02-25 Hitachi High-Tech Corporation Etching method
US11557487B2 (en) * 2021-06-04 2023-01-17 Tokyo Electron Limited Etching metal during processing of a semiconductor structure
CN115527849A (zh) * 2021-06-25 2022-12-27 江苏鲁汶仪器有限公司 一种基于GaN基材料原子层刻蚀方法
JP7231683B1 (ja) * 2021-08-30 2023-03-01 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
JP2024164332A (ja) * 2021-10-06 2024-11-27 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
JP7462065B2 (ja) 2022-03-29 2024-04-04 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、および基板処理装置
KR20240033327A (ko) 2022-09-05 2024-03-12 에스케이하이닉스 주식회사 리간드 교환반응을 이용한 원자층의 에칭방법
CN115985770A (zh) * 2022-12-29 2023-04-18 上海集成电路装备材料产业创新中心有限公司 伪栅加工工艺
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
KR102908511B1 (ko) * 2023-04-03 2026-01-06 주식회사 인포비온 하전 입자 제어를 기반으로 한 원자층 식각 장치 및 방법
WO2024247222A1 (ja) 2023-06-01 2024-12-05 株式会社日立ハイテク ウエハ処理方法およびウエハ処理システム
US20250046614A1 (en) * 2023-07-31 2025-02-06 Tokyo Electron Limited SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS
US12463050B2 (en) 2023-08-30 2025-11-04 Tokyo Electron Limited Methods for wet atomic layer etching of molybdenum
KR102775721B1 (ko) * 2024-02-15 2025-03-05 오스 주식회사 원자층 식각을 위한 기판 처리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
JP2016028424A (ja) 2014-07-10 2016-02-25 東京エレクトロン株式会社 基板の高精度エッチング方法
JP2016208031A (ja) 2015-04-20 2016-12-08 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｍｒａｍスタックをパターニングする乾式プラズマ・エッチング法

Family Cites Families (204)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061769B2 (ja) 1983-08-10 1994-01-05 株式会社日立製作所 アルミナ膜のパターニング方法
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
JPH03263827A (ja) * 1990-03-14 1991-11-25 Yasuhiro Horiike デジタルエツチング装置
JPH06151382A (ja) 1992-11-11 1994-05-31 Toshiba Corp ドライエッチング方法
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH06326060A (ja) 1993-05-12 1994-11-25 Hitachi Ltd 固体表面加工方法
EP0635884A1 (de) 1993-07-13 1995-01-25 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Grabens in einem Substrat und dessen Verwendung in der Smart-Power-Technologie
US5482802A (en) 1993-11-24 1996-01-09 At&T Corp. Material removal with focused particle beams
JPH07183256A (ja) * 1993-12-22 1995-07-21 Hitachi Ltd 原子層エッチング方法及び装置
US6022806A (en) 1994-03-15 2000-02-08 Kabushiki Kaisha Toshiba Method of forming a film in recess by vapor phase growth
JP3331819B2 (ja) 1995-06-30 2002-10-07 ソニー株式会社 化合物半導体のプラズマエッチング方法
US5527425A (en) 1995-07-21 1996-06-18 At&T Corp. Method of making in-containing III/V semiconductor devices
JPH0945670A (ja) 1995-07-29 1997-02-14 Hewlett Packard Co <Hp> Ｉｉｉ族−ｎ系結晶の気相エッチング方法および再成長方法
US5789265A (en) 1995-08-31 1998-08-04 Kabushiki Kaisha Toshiba Method of manufacturing blue light-emitting device by using BCL3 and CL2
GB2322235B (en) 1995-10-19 2000-09-27 Massachusetts Inst Technology Metals removal process
WO1999036956A1 (en) 1998-01-13 1999-07-22 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6177353B1 (en) 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
SE9903213D0 (sv) 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US8206568B2 (en) * 1999-06-22 2012-06-26 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
EP1120820A3 (en) 2000-01-24 2008-01-09 Ebara Corporation Method and apparatus for forming interconnect
US20010024769A1 (en) 2000-02-08 2001-09-27 Kevin Donoghue Method for removing photoresist and residues from semiconductor device surfaces
JP2001255670A (ja) 2000-03-10 2001-09-21 Mitsubishi Electric Corp 微細レジストパターン形成方法および装置
US6517602B2 (en) 2000-03-14 2003-02-11 Hitachi Metals, Ltd Solder ball and method for producing same
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
KR100463237B1 (ko) 2000-06-28 2004-12-23 주식회사 하이닉스반도체 감광막패턴의 형성 방법
US6527855B2 (en) 2000-10-10 2003-03-04 Rensselaer Polytechnic Institute Atomic layer deposition of cobalt from cobalt metallorganic compounds
US20020058409A1 (en) 2000-11-16 2002-05-16 Ching-Te Lin Elimination of overhang in liner/barrier/seed layers using post-deposition sputter etch
US6448192B1 (en) 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
TW552624B (en) 2001-05-04 2003-09-11 Tokyo Electron Ltd Ionized PVD with sequential deposition and etching
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US6635965B1 (en) 2001-05-22 2003-10-21 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US7005372B2 (en) 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US6562700B1 (en) 2001-05-31 2003-05-13 Lsi Logic Corporation Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal
US20030003374A1 (en) 2001-06-15 2003-01-02 Applied Materials, Inc. Etch process for photolithographic reticle manufacturing with improved etch bias
US20030015704A1 (en) 2001-07-23 2003-01-23 Motorola, Inc. Structure and process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same including intermediate surface cleaning
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US7115516B2 (en) 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
AU2003223472A1 (en) 2002-05-14 2003-12-02 Tokyo Electron Limited PLASMA ETCHING OF Cu-CONTAINING LAYERS
US6884730B2 (en) 2002-07-02 2005-04-26 Headway Technologies, Inc. Method of etching a film of magnetic material and method of manufacturing a thin-film magnetic head
JP3878577B2 (ja) 2003-06-06 2007-02-07 株式会社東芝 半導体装置の製造方法
US6933239B2 (en) 2003-01-13 2005-08-23 Applied Materials, Inc. Method for removing conductive residue
US6841484B2 (en) 2003-04-17 2005-01-11 Chentsau Ying Method of fabricating a magneto-resistive random access memory (MRAM) device
JP2004332045A (ja) 2003-05-07 2004-11-25 Renesas Technology Corp 多層膜材料のドライエッチング方法
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
TW200428532A (en) 2003-06-03 2004-12-16 Silicon Integrated Sys Corp Method of modifying conductive wiring
KR100606532B1 (ko) 2003-08-02 2006-07-31 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US7067407B2 (en) 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US7018469B2 (en) 2003-09-23 2006-03-28 Micron Technology, Inc. Atomic layer deposition methods of forming silicon dioxide comprising layers
US7341946B2 (en) 2003-11-10 2008-03-11 Novellus Systems, Inc. Methods for the electrochemical deposition of copper onto a barrier layer of a work piece
US20050233555A1 (en) 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US7115522B2 (en) 2004-07-09 2006-10-03 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
CN100576474C (zh) 2004-07-20 2009-12-30 应用材料股份有限公司 以钽前驱物taimata进行含钽材料的原子层沉积
US8288828B2 (en) 2004-09-09 2012-10-16 International Business Machines Corporation Via contact structure having dual silicide layers
US8084400B2 (en) * 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
US20060102197A1 (en) 2004-11-16 2006-05-18 Kang-Lie Chiang Post-etch treatment to remove residues
US7196955B2 (en) 2005-01-12 2007-03-27 Hewlett-Packard Development Company, L.P. Hardmasks for providing thermally assisted switching of magnetic memory elements
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7365026B2 (en) 2005-02-01 2008-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. CxHy sacrificial layer for cu/low-k interconnects
JP4860219B2 (ja) 2005-02-14 2012-01-25 東京エレクトロン株式会社 基板の処理方法、電子デバイスの製造方法及びプログラム
US7214626B2 (en) 2005-08-24 2007-05-08 United Microelectronics Corp. Etching process for decreasing mask defect
US20070087581A1 (en) 2005-09-09 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Technique for atomic layer deposition
US20070095367A1 (en) 2005-10-28 2007-05-03 Yaxin Wang Apparatus and method for atomic layer cleaning and polishing
US20070117040A1 (en) 2005-11-21 2007-05-24 International Business Machines Corporation Water castable-water strippable top coats for 193 nm immersion lithography
DE102006001253B4 (de) 2005-12-30 2013-02-07 Advanced Micro Devices, Inc. Verfahren zur Herstellung einer Metallschicht über einem strukturierten Dielektrikum mittels einer nasschemischen Abscheidung mit einer stromlosen und einer leistungsgesteuerten Phase
US9230818B2 (en) 2006-02-02 2016-01-05 Trustees Of Boston University Planarization of GaN by photoresist technique using an inductively coupled plasma
WO2007145679A2 (en) 2006-02-02 2007-12-21 Trustees Of Boston University Planarization of gan by photoresist technique using an inductively coupled plasma
US7662718B2 (en) 2006-03-09 2010-02-16 Micron Technology, Inc. Trim process for critical dimension control for integrated circuits
US20070238301A1 (en) 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
US7795148B2 (en) 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US7368393B2 (en) 2006-04-20 2008-05-06 International Business Machines Corporation Chemical oxide removal of plasma damaged SiCOH low k dielectrics
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US8366953B2 (en) 2006-09-19 2013-02-05 Tokyo Electron Limited Plasma cleaning method and plasma CVD method
US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
KR101330707B1 (ko) 2007-07-19 2013-11-19 삼성전자주식회사 반도체 장치의 형성 방법
KR100905993B1 (ko) 2007-09-13 2009-07-02 인하대학교 산학협력단 인듐옥사이드-징크옥사이드의 건식 식각 방법
US8481423B2 (en) 2007-09-19 2013-07-09 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
US8247030B2 (en) 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US7948044B2 (en) 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
KR100925210B1 (ko) 2008-05-27 2009-11-06 한국전자통신연구원 건식 식각 공정을 이용한 산화물 박막 트랜지스터의 제조방법
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
JP5391594B2 (ja) 2008-07-02 2014-01-15 富士通セミコンダクター株式会社 半導体装置の製造方法
KR20100019233A (ko) 2008-08-08 2010-02-18 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
US8551885B2 (en) 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
JP5128421B2 (ja) 2008-09-04 2013-01-23 東京エレクトロン株式会社 プラズマ処理方法およびレジストパターンの改質方法
JP5085595B2 (ja) 2008-09-08 2012-11-28 株式会社東芝 コアシェル型磁性材料、コアシェル型磁性材料の製造方法、デバイス装置、およびアンテナ装置。
JP4305574B1 (ja) 2009-01-14 2009-07-29 住友電気工業株式会社 Ｉｉｉ族窒化物基板、それを備える半導体デバイス、及び、表面処理されたｉｉｉ族窒化物基板を製造する方法
JP5275094B2 (ja) 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
US7759239B1 (en) 2009-05-05 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing a critical dimension of a semiconductor device
US8404561B2 (en) 2009-05-18 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating an isolation structure
US8114306B2 (en) 2009-05-22 2012-02-14 International Business Machines Corporation Method of forming sub-lithographic features using directed self-assembly of polymers
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US9034768B2 (en) 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
JP5813303B2 (ja) 2009-11-20 2015-11-17 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US8247332B2 (en) 2009-12-04 2012-08-21 Novellus Systems, Inc. Hardmask materials
US8664070B2 (en) 2009-12-21 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. High temperature gate replacement process
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
US8227344B2 (en) 2010-02-26 2012-07-24 Tokyo Electron Limited Hybrid in-situ dry cleaning of oxidized surface layers
JP4982582B2 (ja) 2010-03-31 2012-07-25 株式会社東芝 マスクの製造方法
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
KR20130115085A (ko) 2010-04-30 2013-10-21 어플라이드 머티어리얼스, 인코포레이티드 개선된 스택 결함을 위한 비결정질 탄소 증착 방법
KR101340793B1 (ko) 2010-07-09 2013-12-11 노벨러스 시스템즈, 인코포레이티드 고 종횡비 특징부 내부로 텅스텐 증착하기
JP5416280B2 (ja) 2010-08-19 2014-02-12 株式会社アルバック ドライエッチング方法及び半導体装置の製造方法
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
WO2012050888A2 (en) 2010-09-28 2012-04-19 North Carolina State University Gallium nitride based structures with embedded voids and methods for their fabrication
US8124505B1 (en) 2010-10-21 2012-02-28 Hrl Laboratories, Llc Two stage plasma etching method for enhancement mode GaN HFET
US20120100308A1 (en) 2010-10-25 2012-04-26 Asm America, Inc. Ternary metal alloys with tunable stoichiometries
KR101739987B1 (ko) 2010-12-28 2017-05-26 에스케이 텔레콤주식회사 주변블록의 특징벡터를 이용한 영상 부호화/복호화 방법 및 장치
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8546263B2 (en) 2011-04-27 2013-10-01 Applied Materials, Inc. Method of patterning of magnetic tunnel junctions
WO2012146310A1 (en) 2011-04-29 2012-11-01 Applied Materials, Inc. Devices and methods for passivating a flexible substrate in a coating process
FR2975823B1 (fr) 2011-05-27 2014-11-21 Commissariat Energie Atomique Procede de realisation d'un motif a la surface d'un bloc d'un substrat utilisant des copolymeres a bloc
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
KR101380835B1 (ko) 2011-07-22 2014-04-04 성균관대학교산학협력단 그래핀의 원자층 식각 방법
US20130099277A1 (en) 2011-10-25 2013-04-25 The Regents Of The University Of California SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES
US9666414B2 (en) 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
TWI541377B (zh) 2011-11-04 2016-07-11 Ａｓｍ國際股份有限公司 形成摻雜二氧化矽薄膜的方法
US8808561B2 (en) 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US8809994B2 (en) 2011-12-09 2014-08-19 International Business Machines Corporation Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
EP2608247A1 (en) 2011-12-21 2013-06-26 Imec EUV photoresist encapsulation
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US20130313561A1 (en) 2012-05-25 2013-11-28 Triquint Semiconductor, Inc. Group iii-nitride transistor with charge-inducing layer
JP2014049466A (ja) 2012-08-29 2014-03-17 Tokyo Electron Ltd エッチング処理方法及び基板処理装置
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8969997B2 (en) 2012-11-14 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structures and methods of forming the same
JP5918108B2 (ja) 2012-11-16 2016-05-18 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN104871319B (zh) 2012-11-16 2018-04-10 麻省理工学院 半导体结构以及凹槽形成蚀刻技术
US8927989B2 (en) 2012-11-28 2015-01-06 International Business Machines Corporation Voltage contrast inspection of deep trench isolation
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
FR3000600B1 (fr) 2012-12-28 2018-04-20 Commissariat Energie Atomique Procede microelectronique de gravure d'une couche
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US20140335666A1 (en) 2013-05-13 2014-11-13 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics
KR102245104B1 (ko) 2013-06-17 2021-04-26 어플라이드 머티어리얼스, 인코포레이티드 웨트 웨이퍼 백 콘택을 사용하여 실리콘 관통 비아들을 구리 도금하기 위한 방법
JP6170754B2 (ja) 2013-06-18 2017-07-26 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US8940646B1 (en) 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
KR102399752B1 (ko) 2013-09-04 2022-05-20 도쿄엘렉트론가부시키가이샤 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리
US9257431B2 (en) 2013-09-25 2016-02-09 Micron Technology, Inc. Memory cell with independently-sized electrode
US9435049B2 (en) 2013-11-20 2016-09-06 Lam Research Corporation Alkaline pretreatment for electroplating
JP6347695B2 (ja) * 2013-11-20 2018-06-27 東京エレクトロン株式会社 被エッチング層をエッチングする方法
US10265742B2 (en) 2013-11-25 2019-04-23 Applied Materials, Inc. Method for in-situ chamber clean using carbon monoxide (CO) gas utlized in an etch processing chamber
US9620382B2 (en) * 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
US11164753B2 (en) 2014-01-13 2021-11-02 Applied Materials, Inc. Self-aligned double patterning with spatial atomic layer deposition
FR3017241B1 (fr) 2014-01-31 2017-08-25 Commissariat Energie Atomique Procede de gravure plasma
CN106133876A (zh) 2014-03-26 2016-11-16 东丽株式会社 半导体器件的制造方法及半导体器件
US9257638B2 (en) 2014-03-27 2016-02-09 Lam Research Corporation Method to etch non-volatile metal materials
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
FR3023971B1 (fr) 2014-07-18 2016-08-05 Commissariat Energie Atomique Procede de formation des espaceurs d'une grille d'un transistor
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
WO2016033087A1 (en) 2014-08-28 2016-03-03 Cardiac Pacemakers, Inc. Display of temporally aligned heart information from separate implantable medical devices on an extracorporeal display
US9362131B2 (en) 2014-08-29 2016-06-07 Applied Materials, Inc. Fast atomic layer etch process using an electron beam
US9609730B2 (en) 2014-11-12 2017-03-28 Lam Research Corporation Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
US10170324B2 (en) 2014-12-04 2019-01-01 Lam Research Corporation Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch
WO2016100873A1 (en) 2014-12-18 2016-06-23 The Regents Of The University Of Colorado, A Body Corporate Novel methods of atomic layer etching (ale) using sequential, self-limiting thermal reactions
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9881807B2 (en) * 2015-03-30 2018-01-30 Tokyo Electron Limited Method for atomic layer etching
US9607834B2 (en) 2015-04-02 2017-03-28 Tokyo Electron Limited Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
SG10201604524PA (en) * 2015-06-05 2017-01-27 Lam Res Corp ATOMIC LAYER ETCHING OF GaN AND OTHER III-V MATERIALS
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
US9659771B2 (en) 2015-06-11 2017-05-23 Applied Materials, Inc. Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning
US9922839B2 (en) * 2015-06-23 2018-03-20 Lam Research Corporation Low roughness EUV lithography
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9520821B1 (en) 2015-08-19 2016-12-13 Nidec Motor Corporation System and method for optimizing flux regulation in electric motors
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
KR20170050056A (ko) 2015-10-29 2017-05-11 삼성전자주식회사 반도체 소자의 패턴 형성 방법
WO2017099718A1 (en) 2015-12-08 2017-06-15 Intel Corporation Atomic layer etching of transition metals by halogen surface oxidation
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
WO2017147254A1 (en) 2016-02-23 2017-08-31 Tokyo Electron Limited Method and system for atomic layer etching
US10256108B2 (en) 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9837312B1 (en) 2016-07-22 2017-12-05 Lam Research Corporation Atomic layer etching for enhanced bottom-up feature fill
US10283369B2 (en) 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US9997371B1 (en) 2017-04-24 2018-06-12 Lam Research Corporation Atomic layer etch methods and hardware for patterning applications
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR101853588B1 (ko) 2017-08-01 2018-04-30 성균관대학교산학협력단 반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법
KR102485169B1 (ko) 2017-09-08 2023-01-09 삼성디스플레이 주식회사 표시 장치, 이의 제조 방법, 및 전극 형성 방법
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US20190131130A1 (en) 2017-10-31 2019-05-02 Lam Research Corporation Etching metal oxide substrates using ale and selective deposition
CN111937122A (zh) 2018-03-30 2020-11-13 朗姆研究公司 难熔金属和其他高表面结合能材料的原子层蚀刻和平滑化
US10720337B2 (en) 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
US10720334B2 (en) 2018-07-20 2020-07-21 Asm Ip Holding B.V. Selective cyclic dry etching process of dielectric materials using plasma modification
CN112470257B (zh) 2018-07-26 2024-03-29 东京毅力科创株式会社 形成用于半导体器件的晶体学稳定的铁电铪锆基膜的方法
WO2021178399A1 (en) 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012529777A (ja) 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
JP2016028424A (ja) 2014-07-10 2016-02-25 東京エレクトロン株式会社 基板の高精度エッチング方法
JP2016208031A (ja) 2015-04-20 2016-12-08 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｍｒａｍスタックをパターニングする乾式プラズマ・エッチング法

Also Published As

Publication number Publication date
JP2020502811A (ja) 2020-01-23
TWI811199B (zh) 2023-08-11
US11239094B2 (en) 2022-02-01
WO2018118655A1 (en) 2018-06-28
US10566213B2 (en) 2020-02-18
CN118610084A (zh) 2024-09-06
TW202245054A (zh) 2022-11-16
TW201838026A (zh) 2018-10-16
KR20230145551A (ko) 2023-10-17
US20180174860A1 (en) 2018-06-21
TWI832325B (zh) 2024-02-11
KR20250005482A (ko) 2025-01-09
US11721558B2 (en) 2023-08-08
KR102617520B1 (ko) 2023-12-22
KR20190089231A (ko) 2019-07-30
US20200118835A1 (en) 2020-04-16
JP2022180585A (ja) 2022-12-06
JP7320168B2 (ja) 2023-08-03
KR102589704B1 (ko) 2023-10-13
US20180350624A1 (en) 2018-12-06
KR102741138B1 (ko) 2024-12-10
CN110741462A (zh) 2020-01-31
US10566212B2 (en) 2020-02-18
CN110741462B (zh) 2024-06-25
KR20190089222A (ko) 2019-07-30
US20220093413A1 (en) 2022-03-24

Similar Documents

Publication Publication Date Title
JP7320168B2 (ja) デザイナー原子層エッチング
KR102735327B1 (ko) Ale 및 선택적인 증착을 사용하여 기판들 에칭
KR102510612B1 (ko) 향상된 텅스텐 증착 충진을 위한 텅스텐의 원자층 에칭
US10304659B2 (en) Ale smoothness: in and outside semiconductor industry
KR102642011B1 (ko) 내화성 금속들 및 다른 고 표면 결합 에너지 재료들의 원자 층 에칭 및 평활화 (smoothing)
TW202544924A (zh) 用於減式金屬蝕刻的原子層蝕刻

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201210

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220405

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20220531

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220929

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20220929

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20221007

C21 Notice of transfer of a case for reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C21

Effective date: 20221011

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221115

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20221213

R150 Certificate of patent or registration of utility model

Ref document number: 7209155

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250