JP2020502811A - デザイナー原子層エッチング - Google Patents
デザイナー原子層エッチング Download PDFInfo
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- JP2020502811A JP2020502811A JP2019533041A JP2019533041A JP2020502811A JP 2020502811 A JP2020502811 A JP 2020502811A JP 2019533041 A JP2019533041 A JP 2019533041A JP 2019533041 A JP2019533041 A JP 2019533041A JP 2020502811 A JP2020502811 A JP 2020502811A
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- gas
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- energy
- temperature
- tantalum
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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Abstract
Description
本出願は、2016年12月19日に出願された「DESIGNER ATOMIC LAYER ETCHING」と題する米国特許仮出願第62/436,286号、および2017年7月14日に出願された「DESIGNER ATOMIC LAYER ETCHING」と題する米国特許仮出願第62/532,916号の両方に対し優先権を主張する、2017年12月13日に出願された「DESIGNER ATOMIC LAYER ETCHING」と題する、米国特許出願第15/841,205号の利益を主張する。これらの出願は、参照によりその全体が本出願において組み込まれる。
装置
実験
結論
Claims (45)
- 基板上の材料をエッチングする方法であって、
改質ガスおよび除去ガスを用いた前記材料の原子層エッチングプロセスのためのプロセス条件を特定すること、および
前記基板上の材料に前記原子層エッチングプロセスを、
エッチングされる前記材料に対して改質エネルギーおよび脱着エネルギーを有する前記改質ガスに前記基板を曝露して、前記材料の表面を改質すること、および
前記改質表面を前記除去ガスに曝露し、プラズマを発生させて、前記改質表面を除去すること、
により実施することを含み、
前記改質エネルギーが、前記脱着エネルギーより小さく、前記脱着エネルギーが前記材料の表面結合エネルギーより小さい、方法。 - 請求項1に記載の方法であって、
前記プロセス条件を特定することが、前記基板の改質ガスへの前記基板の曝露を実施するための基板温度を選択することを含み、前記基板温度により得られるエネルギーが、前記改質エネルギーと前記脱着エネルギーとの間にある、方法。 - 請求項1に記載の方法であって、
前記プロセス条件を特定することが、前記改質表面の除去ガスへの曝露中にバイアスを印加するためのバイアス電力を選択することを含み、前記バイアスにより得られるエネルギーが前記脱着エネルギーと前記表面結合エネルギーとの間にある、方法。 - 請求項1に記載の方法であって、
前記改質ガスが、前記材料をエッチングすることなく前記材料に吸着するように選択される、方法。 - 請求項1に記載の方法であって、
前記除去ガスが、下層の非改質材料をエッチングすることなく、前記改質表面を除去するように選択される、方法。 - 請求項1に記載の方法であって、
前記プロセス条件が、温度、チャンバー圧、プラズマ出力、バイアス電力、改質ガス流、および暴露時間からなる群より選択される、方法。 - 請求項1に記載の方法であって、
プロセスウィンドウ内の前記プロセス条件を修正することをさらに含む、方法。 - 請求項1に記載の方法であって、
前記材料が、ケイ素、炭素、タングステン、およびタンタルからなる群より選択される、方法。 - 請求項8に記載の方法であって、
前記原子層エッチングプロセスを実施する前に、前記基板を約0℃未満の温度に冷却することをさらに含み、前記特定されるプロセス条件が温度であり、前記材料がタンタルである、方法。 - 請求項9に記載の方法であって、
前記基板が、約0℃未満の基板温度で前記改質ガスに曝露される、方法。 - 請求項9に記載の方法であって、
前記温度が、約−20℃〜約0℃である、方法。 - 請求項9に記載の方法であって、
前記基板が窒化タンタルを含む、方法。 - 請求項1に記載の方法であって、
バイアスが、前記基板を前記改質ガスに曝露すること、および前記改質表面を前記除去ガスに曝露することの内の少なくとも1つで印加される、方法。 - 請求項1〜13のいずれか一項に記載の方法であって、
原子層エッチングが、前記基板を前記改質ガスに曝露することと、前記基板を前記除去ガスに曝露することとの間で、前記基板を収容するチャンバーをパージすることをさらに含む、方法。 - 請求項14に記載の方法であって、
パージが、N2、Ar、Ne、He、およびこれらの組み合わせからなる群より選択される不活性ガスを供給することにより実施される、方法。 - 請求項1〜13のいずれか一項に記載の方法であって、
前記改質ガスがハロゲン含有ガスである、方法。 - 請求項16に記載の方法であって、
前記改質ガスが塩素である、方法。 - 請求項16に記載の方法であって、
前記改質ガスが、臭素、ヨウ素、六フッ化硫黄、四フッ化ケイ素、および三塩化ホウ素(BCl3)からなる群より選択される、方法。 - 請求項1〜13のいずれか一項に記載の方法であって、
前記除去ガスが不活性ガスである、方法。 - 請求項19に記載の方法であって、
前記除去ガスがネオンまたはクリプトンである、方法。 - 基板上のタンタルをエッチングする方法であって、
前記タンタルを含む基板を用意すること、
前記基板を約0℃未満の温度に冷却すること、および、
前記タンタルの原子層エッチングを、
前記基板を改質ガスに曝露して、前記タンタルの表面を改質すること、および
前記改質表面を除去ガスに曝露し、プラズマを発生させて、前記タンタルの改質表面を除去すること、
により実施することを含む、方法。 - 請求項21に記載の方法であって、
前記基板が、約0℃未満の基板温度で前記改質ガスに曝露される、方法。 - 請求項21に記載の方法であって、
前記温度が、約−20℃〜約0℃である、方法。 - 請求項21に記載の方法であって、
前記基板が窒化タンタルを含む、方法。 - 請求項21に記載の方法であって、
バイアスが、前記基板を前記改質ガスに曝露すること、および前記改質表面を前記除去ガスに曝露することの内の少なくとも1つで印加される、方法。 - 請求項21〜25のいずれか一項に記載の方法であって、
原子層エッチングが、前記基板を前記改質ガスに曝露することと、前記基板を前記除去ガスに曝露することとの間で、前記基板を収容するチャンバーをパージすることをさらに含む、方法。 - 請求項26に記載の方法であって、
パージが、N2、Ar、Ne、He、およびこれらの組み合わせからなる群より選択される不活性ガスを供給することにより実施される、方法。 - 請求項21〜25のいずれか一項に記載の方法であって、
前記改質ガスがハロゲン含有ガスである、方法。 - 請求項28に記載の方法であって、
前記改質ガスが塩素である、方法。 - 請求項28に記載の方法であって、
前記改質ガスが、臭素、ヨウ素、六フッ化硫黄、四フッ化ケイ素、および三塩化ホウ素(BCl3)からなる群より選択される、方法。 - 請求項21〜25のいずれか一項に記載の方法であって、
前記除去ガスが不活性ガスである、方法。 - 請求項31に記載の方法であって、
前記除去ガスがネオンまたはクリプトンである、方法。 - 基板を処理するための装置であって、
シャワーヘッドおよび材料を有する前記基板を保持するための基板支持体を含むプロセスチャンバー、
プラズマ発生器、および
少なくとも1つのプロセッサーおよび記憶装置を有する制御装置を含み、
前記少なくとも1つのプロセッサーおよび前記記憶装置が、相互に通信可能に接続され、
前記少なくとも1つのプロセッサーが、流量制御ハードウェアと少なくとも操作可能に接続され、
前記記憶装置が、
改質ガスおよび除去ガスを用いた前記材料の原子層エッチングプロセスのためのプロセス条件の特定を可能とすること、および
前記基板上の前記材料に前記原子層エッチングプロセスを、
エッチングされる前記材料に対して改質エネルギーおよび脱着エネルギーを有する改質ガスを導入して前記材料の表面の改質すること、および
前記除去ガスの導入およびプラズマの生成を可能として、前記改質表面を除去すること、により実施可能とすること、
のための機械可読命令を保存し、
前記改質エネルギーが、前記脱着エネルギーより小さく、前記脱着エネルギーが前記材料の表面結合エネルギーより小さい、装置。 - 請求項33に記載の装置であって、
前記プロセス条件が、温度、チャンバー圧、プラズマ出力、バイアス電力、改質ガス流、および暴露時間からなる群より選択される、装置。 - 請求項33に記載の装置であって、
前記機械可読命令が、プロセスウィンドウ内の前記プロセス条件の修正を可能とする命令をさらに含む、装置。 - 請求項33に記載の装置であって、
前記機械可読命令が、前記原子層エッチングプロセスの実施を可能とする前に、前記基板支持体温度を約0℃未満の温度に設定可能とする命令をさらに含む、装置。 - 請求項36に記載の装置であって、
前記機械可読命令が、前記改質ガスの導入を可能としている間に、前記基板支持体温度を約0℃未満の温度に設定可能とする命令をさらに含む、装置。 - 請求項36に記載の装置であって、
前記基板支持体温度が、約−20℃〜約0℃である、装置。 - 請求項33に記載の装置であって、
前記機械可読命令が、前記改質ガスの導入を可能とすることおよび前記除去ガスの導入を可能とすることの内の少なくとも1つの間に、前記基板支持体にバイアスを印加可能とする命令をさらに含む、装置。 - 請求項33〜39のいずれか一項に記載の装置であって、
前記原子層エッチングを実施する機械可読命令が、前記改質ガスの導入を可能とすることと、前記除去ガスの導入を可能とすることとの間に、前記プロセスチャンバーのパージを可能とする命令をさらに含む、装置。 - 基板を処理するための装置であって、
シャワーヘッドおよび前記基板を保持するための基板支持体を含むプロセスチャンバー、
プラズマ発生器、および
少なくとも1つのプロセッサーおよび記憶装置を有する制御装置を含み、
前記少なくとも1つのプロセッサーおよび前記記憶装置が、相互に通信可能に接続され、
前記少なくとも1つのプロセッサーが、流量制御ハードウェアと少なくとも操作可能に接続され、
前記記憶装置が、
前記タンタルを含む基板を有する前記基板支持体の温度を約0℃未満の温度に設定可能とすること、および、
前記タンタルの原子層エッチングを、
改質ガスの導入により、前記タンタルの表面を改質可能とすること、および、
前記除去ガスの導入およびプラズマの生成を可能として前記改質タンタルの除去を可能とすること、
により実施可能とすること、
のための機械可読命令を保存する、装置。 - 請求項41に記載の装置であって、
前記機械可読命令が、前記改質ガスの導入を可能としている間に、前記基板支持体温度を約0℃未満の温度に設定可能とする命令をさらに含む、装置。 - 請求項41に記載の装置であって、
前記基板支持体温度が、約−20℃〜約0℃である、装置。 - 請求項41に記載の装置であって、
前記機械可読命令が、前記改質ガスの導入を可能とすることおよび前記除去ガスの導入を可能とすることの内の少なくとも1つの間に、前記基板支持体にバイアスを印加可能とする命令をさらに含む、装置。 - 請求項41〜44のいずれか一項に記載の装置であって、
前記原子層エッチングを実施する機械可読命令が、前記改質ガスの導入を可能とすることと、前記除去ガスの導入を可能とすることとの間に、前記プロセスチャンバーのパージを可能とする命令をさらに含む、装置。
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WO2022220170A1 (ja) * | 2021-04-15 | 2022-10-20 | 東京エレクトロン株式会社 | エッチング方法及び処理装置 |
WO2022224412A1 (ja) * | 2021-04-22 | 2022-10-27 | 株式会社日立ハイテク | エッチング方法 |
JP7231683B1 (ja) | 2021-08-30 | 2023-03-01 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
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TWI847168B (zh) | 2021-08-30 | 2024-07-01 | 日商國際電氣股份有限公司 | 半導體裝置之製造方法、基板處理裝置及電腦可讀取的記錄媒體 |
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WO2018118655A1 (en) | 2018-06-28 |
US11721558B2 (en) | 2023-08-08 |
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US20180174860A1 (en) | 2018-06-21 |
US20220093413A1 (en) | 2022-03-24 |
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