SG11201707998TA - Method for atomic layer etching - Google Patents

Method for atomic layer etching

Info

Publication number
SG11201707998TA
SG11201707998TA SG11201707998TA SG11201707998TA SG11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA SG 11201707998T A SG11201707998T A SG 11201707998TA
Authority
SG
Singapore
Prior art keywords
atomic layer
layer etching
etching
atomic
layer
Prior art date
Application number
SG11201707998TA
Inventor
Alok Ranjan
Sonam Sherpa
Mingmei Wang
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201707998TA publication Critical patent/SG11201707998TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
SG11201707998TA 2015-03-30 2016-03-29 Method for atomic layer etching SG11201707998TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562139795P 2015-03-30 2015-03-30
PCT/US2016/024661 WO2016160778A1 (en) 2015-03-30 2016-03-29 Method for atomic layer etching

Publications (1)

Publication Number Publication Date
SG11201707998TA true SG11201707998TA (en) 2017-10-30

Family

ID=55745829

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201707998TA SG11201707998TA (en) 2015-03-30 2016-03-29 Method for atomic layer etching

Country Status (7)

Country Link
US (1) US9881807B2 (en)
JP (1) JP6532066B2 (en)
KR (1) KR102510737B1 (en)
CN (1) CN107431011B (en)
SG (1) SG11201707998TA (en)
TW (1) TWI621177B (en)
WO (1) WO2016160778A1 (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256108B2 (en) * 2016-03-01 2019-04-09 Lam Research Corporation Atomic layer etching of AL2O3 using a combination of plasma and vapor treatments
KR102292077B1 (en) 2016-12-09 2021-08-23 에이에스엠 아이피 홀딩 비.브이. Thermal Atomic Layer Etching Process
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10692724B2 (en) * 2016-12-23 2020-06-23 Lam Research Corporation Atomic layer etching methods and apparatus
US9779956B1 (en) * 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US10134600B2 (en) * 2017-02-06 2018-11-20 Lam Research Corporation Dielectric contact etch
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US10483118B2 (en) * 2017-05-11 2019-11-19 Tokyo Electron Limited Etching method
US10504742B2 (en) * 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
JP6987172B2 (en) * 2017-11-28 2021-12-22 東京エレクトロン株式会社 Etching method and etching equipment
JP2019102483A (en) * 2017-11-28 2019-06-24 東京エレクトロン株式会社 Etching method and etching apparatus
KR102642011B1 (en) 2018-03-30 2024-02-27 램 리써치 코포레이션 Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
CN112219266B (en) 2018-04-13 2024-06-25 玛特森技术公司 Treatment of workpieces with alkyl halide-generated reactive species
GB201810387D0 (en) * 2018-06-25 2018-08-08 Spts Technologies Ltd Method of plasma etching
US10847375B2 (en) * 2018-06-26 2020-11-24 Lam Research Corporation Selective atomic layer etching
US10720337B2 (en) * 2018-07-20 2020-07-21 Asm Ip Holding B.V. Pre-cleaning for etching of dielectric materials
JP2021019201A (en) 2019-07-18 2021-02-15 エーエスエム アイピー ホールディング ビー．ブイ． Showerhead device for semiconductor processing system
US11043362B2 (en) * 2019-09-17 2021-06-22 Tokyo Electron Limited Plasma processing apparatuses including multiple electron sources
JP7114554B2 (en) 2019-11-22 2022-08-08 株式会社Kokusai Electric Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
CN111370308B (en) * 2020-02-18 2023-03-21 中国科学院微电子研究所 Etching method and system, etching control device, electronic device and equipment
JP7394665B2 (en) * 2020-03-11 2023-12-08 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
US20210408235A1 (en) * 2020-06-25 2021-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with silicide gate fill structure
CN112366135B (en) * 2020-10-26 2024-06-21 北京北方华创微电子装备有限公司 Silicon atomic layer etching method
JP7511501B2 (en) * 2021-02-10 2024-07-05 東京エレクトロン株式会社 Plasma processing apparatus and monitoring device
KR102654170B1 (en) * 2021-02-17 2024-04-04 대전대학교 산학협력단 Atomic layer etching method using liquid precursor
US20220301887A1 (en) * 2021-03-16 2022-09-22 Applied Materials, Inc. Ruthenium etching process
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
JP2024098769A (en) 2023-01-11 2024-07-24 東京エレクトロン株式会社 Etching method and plasma processing apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
KR101080604B1 (en) * 2010-02-09 2011-11-04 성균관대학교산학협력단 atomic layer etching apparatus and etching method using the same
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
KR101380835B1 (en) * 2011-07-22 2014-04-04 성균관대학교산학협력단 Atomic layer etching method of graphene
US20130084707A1 (en) 2011-09-30 2013-04-04 Tokyo Electron Limited Dry cleaning method for recovering etch process condition
CN103117216B (en) * 2011-11-17 2015-08-05 中芯国际集成电路制造(上海)有限公司 Fleet plough groove isolation structure is avoided to produce the manufacture method of the semiconductor device of unfilled corner
US9330899B2 (en) * 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film

Also Published As

Publication number Publication date
WO2016160778A1 (en) 2016-10-06
CN107431011A (en) 2017-12-01
KR20180036646A (en) 2018-04-09
TW201643958A (en) 2016-12-16
US9881807B2 (en) 2018-01-30
CN107431011B (en) 2021-08-24
JP2018510515A (en) 2018-04-12
US20160293432A1 (en) 2016-10-06
TWI621177B (en) 2018-04-11
JP6532066B2 (en) 2019-06-19
KR102510737B1 (en) 2023-03-15

Similar Documents

Publication Publication Date Title
SG11201707998TA (en) Method for atomic layer etching
SG10201610659YA (en) Etching Method
SG10201604315QA (en) Etching Method
SG10201610044VA (en) Plasma etching method
SG10201702358YA (en) Wafer producing method
SG10201603903QA (en) Wafer producing method
SG10201603714RA (en) Wafer producing method
SG10201605092PA (en) Wafer producing method
SG10201604080XA (en) Wafer producing method
SG10201600555UA (en) Wafer producing method
SG10201600557XA (en) Wafer producing method
SG10201510273SA (en) Wafer producing method
PT3338105T (en) Method for accelerometer-assisted navigation
SG10201600552YA (en) Wafer producing method
SG10201607880PA (en) METHOD FOR FORMING TiON FILM
SG10201510271QA (en) Wafer producing method
SG10201601981YA (en) Wafer producing method
SG10201509454YA (en) Wafer producing method
SG10201509475VA (en) Wafer producing method
SG10201704123PA (en) Wafer producing method
SG11201701159QA (en) Atomic layer etching device and atomic layer etching method using same
SG10201601975SA (en) Wafer producing method
SG10201506217SA (en) Etching method of multilayered film
SG10201509471YA (en) Wafer producing method
SG11201703122PA (en) Plasma etching method