SG10201510271QA - Wafer producing method - Google Patents
Wafer producing methodInfo
- Publication number
- SG10201510271QA SG10201510271QA SG10201510271QA SG10201510271QA SG10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA
- Authority
- SG
- Singapore
- Prior art keywords
- wafer producing
- wafer
- producing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015001039A JP6395613B2 (en) | 2015-01-06 | 2015-01-06 | Wafer generation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201510271QA true SG10201510271QA (en) | 2016-08-30 |
Family
ID=56133278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201510271QA SG10201510271QA (en) | 2015-01-06 | 2015-12-15 | Wafer producing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US9517530B2 (en) |
JP (1) | JP6395613B2 (en) |
KR (1) | KR20160084799A (en) |
CN (1) | CN105750742B (en) |
DE (1) | DE102016200027A1 (en) |
SG (1) | SG10201510271QA (en) |
TW (1) | TWI673785B (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6358941B2 (en) * | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | Wafer generation method |
JP6399913B2 (en) | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | Wafer generation method |
JP6391471B2 (en) * | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | Wafer generation method |
JP6395633B2 (en) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6395632B2 (en) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6429715B2 (en) | 2015-04-06 | 2018-11-28 | 株式会社ディスコ | Wafer generation method |
JP6494382B2 (en) | 2015-04-06 | 2019-04-03 | 株式会社ディスコ | Wafer generation method |
JP6425606B2 (en) | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | Wafer production method |
JP6472333B2 (en) | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | Wafer generation method |
JP6478821B2 (en) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | Wafer generation method |
JP6482423B2 (en) * | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | Wafer generation method |
JP6472347B2 (en) | 2015-07-21 | 2019-02-20 | 株式会社ディスコ | Thinning method of wafer |
JP6482425B2 (en) | 2015-07-21 | 2019-03-13 | 株式会社ディスコ | Thinning method of wafer |
JP6690983B2 (en) | 2016-04-11 | 2020-04-28 | 株式会社ディスコ | Wafer generation method and actual second orientation flat detection method |
JP6698468B2 (en) * | 2016-08-10 | 2020-05-27 | 株式会社ディスコ | Wafer generation method |
JP6773506B2 (en) * | 2016-09-29 | 2020-10-21 | 株式会社ディスコ | Wafer generation method |
JP2018093046A (en) * | 2016-12-02 | 2018-06-14 | 株式会社ディスコ | Wafer production method |
JP6781639B2 (en) * | 2017-01-31 | 2020-11-04 | 株式会社ディスコ | Wafer generation method |
JP2018133485A (en) | 2017-02-16 | 2018-08-23 | 株式会社ディスコ | Wafer production method |
JP2019067944A (en) | 2017-10-02 | 2019-04-25 | 株式会社ディスコ | Ingot and processing method of wafer |
JP2020031134A (en) | 2018-08-22 | 2020-02-27 | 株式会社ディスコ | Facet region detection method and detection device |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0152616A3 (en) * | 1983-12-23 | 1986-03-19 | International Paper Company | Method and apparatus to achieve raw edge protection |
TW350095B (en) * | 1995-11-21 | 1999-01-11 | Daido Hoxan Inc | Cutting method and apparatus for semiconductor materials |
JP2000094221A (en) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | Electric discharge wire saw |
TWI520269B (en) * | 2002-12-03 | 2016-02-01 | Hamamatsu Photonics Kk | Cutting method of semiconductor substrate |
JP4753628B2 (en) | 2004-06-11 | 2011-08-24 | 昭和電工株式会社 | Method for manufacturing compound semiconductor device wafer |
JP4183093B2 (en) * | 2005-09-12 | 2008-11-19 | コバレントマテリアル株式会社 | Silicon wafer manufacturing method |
JP2009266892A (en) * | 2008-04-22 | 2009-11-12 | Sumitomo Electric Ind Ltd | Method for manufacturing compound semiconductor crystalline substrate |
US8338218B2 (en) | 2008-06-26 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module |
JP6004338B2 (en) * | 2011-02-10 | 2016-10-05 | 信越ポリマー株式会社 | Single crystal substrate manufacturing method and internal modified layer forming single crystal member |
JP2012238746A (en) * | 2011-05-12 | 2012-12-06 | Disco Abrasive Syst Ltd | Division method of optical device wafer |
JP5917862B2 (en) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | Processing object cutting method |
JP6002982B2 (en) | 2011-08-31 | 2016-10-05 | 株式会社フジシール | Pouch container |
JP6026222B2 (en) * | 2012-10-23 | 2016-11-16 | 株式会社ディスコ | Wafer processing method |
JP5836998B2 (en) * | 2013-04-23 | 2015-12-24 | 株式会社豊田中央研究所 | Crack generation method, laser cutting method and crack generation apparatus |
JP6399914B2 (en) * | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | Wafer generation method |
-
2015
- 2015-01-06 JP JP2015001039A patent/JP6395613B2/en active Active
- 2015-12-03 KR KR1020150171605A patent/KR20160084799A/en active Search and Examination
- 2015-12-08 TW TW104141116A patent/TWI673785B/en active
- 2015-12-15 SG SG10201510271QA patent/SG10201510271QA/en unknown
- 2015-12-29 CN CN201511009172.6A patent/CN105750742B/en active IP Right Grant
-
2016
- 2016-01-05 US US14/988,310 patent/US9517530B2/en active Active
- 2016-01-05 DE DE102016200027.6A patent/DE102016200027A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20160084799A (en) | 2016-07-14 |
US20160193690A1 (en) | 2016-07-07 |
US9517530B2 (en) | 2016-12-13 |
DE102016200027A1 (en) | 2016-07-07 |
JP6395613B2 (en) | 2018-09-26 |
JP2016127186A (en) | 2016-07-11 |
TWI673785B (en) | 2019-10-01 |
TW201635364A (en) | 2016-10-01 |
CN105750742B (en) | 2019-11-29 |
CN105750742A (en) | 2016-07-13 |
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