SG10201510271QA - Wafer producing method - Google Patents

Wafer producing method

Info

Publication number
SG10201510271QA
SG10201510271QA SG10201510271QA SG10201510271QA SG10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA SG 10201510271Q A SG10201510271Q A SG 10201510271QA
Authority
SG
Singapore
Prior art keywords
producing method
wafer producing
wafer
method
Prior art date
Application number
SG10201510271QA
Inventor
Kazuya Hirata
Kunimitsu Takahashi
Yoko Nishino
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015001039A priority Critical patent/JP6395613B2/en
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201510271QA publication Critical patent/SG10201510271QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
SG10201510271QA 2015-01-06 2015-12-15 Wafer producing method SG10201510271QA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015001039A JP6395613B2 (en) 2015-01-06 2015-01-06 Wafer generation method

Publications (1)

Publication Number Publication Date
SG10201510271QA true SG10201510271QA (en) 2016-08-30

Family

ID=56133278

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201510271QA SG10201510271QA (en) 2015-01-06 2015-12-15 Wafer producing method

Country Status (7)

Country Link
US (1) US9517530B2 (en)
JP (1) JP6395613B2 (en)
KR (1) KR20160084799A (en)
CN (1) CN105750742B (en)
DE (1) DE102016200027A1 (en)
SG (1) SG10201510271QA (en)
TW (1) TW201635364A (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6399913B2 (en) 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method
JP6358941B2 (en) * 2014-12-04 2018-07-18 株式会社ディスコ Wafer generation method
JP6391471B2 (en) * 2015-01-06 2018-09-19 株式会社ディスコ Wafer generation method
JP6395633B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6395632B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6425606B2 (en) 2015-04-06 2018-11-21 株式会社ディスコ Wafer production method
JP6494382B2 (en) 2015-04-06 2019-04-03 株式会社ディスコ Wafer generation method
JP6478821B2 (en) * 2015-06-05 2019-03-06 株式会社ディスコ Wafer generation method
JP6482423B2 (en) * 2015-07-16 2019-03-13 株式会社ディスコ Wafer generation method
JP6472347B2 (en) 2015-07-21 2019-02-20 株式会社ディスコ Thinning method of wafer
JP6482425B2 (en) 2015-07-21 2019-03-13 株式会社ディスコ Thinning method of wafer
JP2017189870A (en) 2016-04-11 2017-10-19 株式会社ディスコ Method of wafer production and method of detecting actual second orientation flat
JP2018093046A (en) * 2016-12-02 2018-06-14 株式会社ディスコ Wafer production method
JP2019067944A (en) 2017-10-02 2019-04-25 株式会社ディスコ Ingot and processing method of wafer

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO845182L (en) * 1983-12-23 1985-06-24 Int Paper Co A method for the treatment of edges of cardboard or paper laminates.
TW350095B (en) * 1995-11-21 1999-01-11 Daido Hoxan Inc Cutting method and apparatus for semiconductor materials
JP2000094221A (en) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd Electric discharge wire saw
TWI520269B (en) * 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US20080070380A1 (en) 2004-06-11 2008-03-20 Showda Denko K.K. Production Method of Compound Semiconductor Device Wafer
JP4183093B2 (en) * 2005-09-12 2008-11-19 コバレントマテリアル株式会社 Silicon wafer manufacturing method
JP2009266892A (en) * 2008-04-22 2009-11-12 Sumitomo Electric Ind Ltd Method for manufacturing compound semiconductor crystalline substrate
US8338218B2 (en) 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
WO2012108052A1 (en) * 2011-02-10 2012-08-16 信越ポリマー株式会社 Monocrystalline substrate production method and monocrystalline member with modified layer formed therein
JP2012238746A (en) * 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd Division method of optical device wafer
JP5917862B2 (en) * 2011-08-30 2016-05-18 浜松ホトニクス株式会社 Processing object cutting method
JP6002982B2 (en) 2011-08-31 2016-10-05 株式会社フジシール Pouch container
JP6026222B2 (en) * 2012-10-23 2016-11-16 株式会社ディスコ Wafer processing method
JP5836998B2 (en) * 2013-04-23 2015-12-24 株式会社豊田中央研究所 Crack generation method, laser cutting method and crack generation apparatus
JP6399914B2 (en) * 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method

Also Published As

Publication number Publication date
TW201635364A (en) 2016-10-01
CN105750742B (en) 2019-11-29
KR20160084799A (en) 2016-07-14
US9517530B2 (en) 2016-12-13
JP2016127186A (en) 2016-07-11
CN105750742A (en) 2016-07-13
JP6395613B2 (en) 2018-09-26
US20160193690A1 (en) 2016-07-07
DE102016200027A1 (en) 2016-07-07

Similar Documents

Publication Publication Date Title
GB201406151D0 (en) Method
SG10201606385RA (en) Wafer processing method
SG10201606388SA (en) Wafer processing method
SG10201600555UA (en) Wafer producing method
SG10201603903QA (en) Wafer producing method
SG10201509475VA (en) Wafer producing method
SG10201600557XA (en) Wafer producing method
SG10201603714RA (en) Wafer producing method
SG10201605092PA (en) Wafer producing method
SG10201509454YA (en) Wafer producing method
SG10201610962SA (en) SiC WAFER PRODUCING METHOD
SG10201510271QA (en) Wafer producing method
SG10201604315QA (en) Etching Method
GB201418159D0 (en) Method
GB201406155D0 (en) Method
GB201418469D0 (en) Method
GB201409558D0 (en) Method
GB201417712D0 (en) Method
RU2016133614A (en) Method for producing arilpropenes
SG10201504351YA (en) Wafer processing method
SG10201702358YA (en) Wafer producing method
TWI563547B (en) Method of forming semiconductor structure
GB201522399D0 (en) Process
SG10201505185XA (en) Wafer processing method
GB2539521B (en) Process