SG10201603903QA - Wafer producing method - Google Patents

Wafer producing method

Info

Publication number
SG10201603903QA
SG10201603903QA SG10201603903QA SG10201603903QA SG10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA
Authority
SG
Singapore
Prior art keywords
producing method
wafer producing
wafer
method
Prior art date
Application number
SG10201603903QA
Inventor
Hirata Kazuya
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015112317A priority Critical patent/JP6482389B2/en
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201603903QA publication Critical patent/SG10201603903QA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608Silicon carbide
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003Nitride compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
SG10201603903QA 2015-06-02 2016-05-16 Wafer producing method SG10201603903QA (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015112317A JP6482389B2 (en) 2015-06-02 2015-06-02 Wafer generation method

Publications (1)

Publication Number Publication Date
SG10201603903QA true SG10201603903QA (en) 2017-01-27

Family

ID=57352617

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201603903QA SG10201603903QA (en) 2015-06-02 2016-05-16 Wafer producing method

Country Status (7)

Country Link
US (1) US9815138B2 (en)
JP (1) JP6482389B2 (en)
KR (1) KR20160142232A (en)
CN (1) CN106216858A (en)
DE (1) DE102016209555A1 (en)
SG (1) SG10201603903QA (en)
TW (1) TW201700250A (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6399913B2 (en) * 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method
JP6399914B2 (en) * 2014-12-04 2018-10-03 株式会社ディスコ Wafer generation method
JP6358941B2 (en) 2014-12-04 2018-07-18 株式会社ディスコ Wafer generation method
JP6358940B2 (en) * 2014-12-04 2018-07-18 株式会社ディスコ Wafer generation method
JP6391471B2 (en) 2015-01-06 2018-09-19 株式会社ディスコ Wafer generation method
JP6395633B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6395632B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6425606B2 (en) 2015-04-06 2018-11-21 株式会社ディスコ Wafer production method
JP6494382B2 (en) 2015-04-06 2019-04-03 株式会社ディスコ Wafer generation method
JP6456228B2 (en) * 2015-04-15 2019-01-23 株式会社ディスコ Thin plate separation method
JP6478821B2 (en) * 2015-06-05 2019-03-06 株式会社ディスコ Wafer generation method
JP6482423B2 (en) 2015-07-16 2019-03-13 株式会社ディスコ Wafer generation method
JP6482425B2 (en) 2015-07-21 2019-03-13 株式会社ディスコ Thinning method of wafer
JP6472347B2 (en) 2015-07-21 2019-02-20 株式会社ディスコ Thinning method of wafer
JP2017189870A (en) 2016-04-11 2017-10-19 株式会社ディスコ Method of wafer production and method of detecting actual second orientation flat
JP2018093046A (en) * 2016-12-02 2018-06-14 株式会社ディスコ Wafer production method
JP2018133487A (en) * 2017-02-16 2018-08-23 国立大学法人埼玉大学 Method for manufacturing peeling substrate
WO2019044588A1 (en) * 2017-09-04 2019-03-07 リンテック株式会社 Thinned plate member production method and thinned plate member production device
US10388526B1 (en) 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US10468304B1 (en) 2018-05-31 2019-11-05 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods

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JP2000094221A (en) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd Electric discharge wire saw
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
GB2402230B (en) * 2003-05-30 2006-05-03 Xsil Technology Ltd Focusing an optical beam to two foci
US20050217560A1 (en) * 2004-03-31 2005-10-06 Tolchinsky Peter G Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
CN102439728B (en) * 2009-04-21 2015-08-19 泰特拉桑有限公司 Form the method for the structure in solar cell
CN102473851A (en) * 2009-07-07 2012-05-23 皇家飞利浦电子股份有限公司 Patterning device for generating a pattern in and/or on a layer
JP5537081B2 (en) * 2009-07-28 2014-07-02 浜松ホトニクス株式会社 Processing object cutting method
JP5917862B2 (en) * 2011-08-30 2016-05-18 浜松ホトニクス株式会社 Processing object cutting method
JP5940906B2 (en) * 2012-06-19 2016-06-29 株式会社ディスコ Laser processing equipment
WO2014179368A1 (en) * 2013-04-29 2014-11-06 Solexel, Inc. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate
CN103495805A (en) * 2013-09-27 2014-01-08 苏州德龙激光股份有限公司 Laser point printing device
JP2016015463A (en) * 2014-06-10 2016-01-28 エルシード株式会社 METHOD FOR PROCESSING SiC MATERIAL AND SiC MATERIAL
JP6390898B2 (en) * 2014-08-22 2018-09-19 アイシン精機株式会社 Substrate manufacturing method, workpiece cutting method, and laser processing apparatus
JP6486239B2 (en) * 2015-08-18 2019-03-20 株式会社ディスコ Wafer processing method
JP6486240B2 (en) * 2015-08-18 2019-03-20 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
TW201700250A (en) 2017-01-01
US9815138B2 (en) 2017-11-14
US20160354863A1 (en) 2016-12-08
DE102016209555A1 (en) 2016-12-08
CN106216858A (en) 2016-12-14
KR20160142232A (en) 2016-12-12
JP2016225536A (en) 2016-12-28
JP6482389B2 (en) 2019-03-13

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