SG10201603714RA - Wafer producing method - Google Patents
Wafer producing methodInfo
- Publication number
- SG10201603714RA SG10201603714RA SG10201603714RA SG10201603714RA SG10201603714RA SG 10201603714R A SG10201603714R A SG 10201603714RA SG 10201603714R A SG10201603714R A SG 10201603714RA SG 10201603714R A SG10201603714R A SG 10201603714RA SG 10201603714R A SG10201603714R A SG 10201603714RA
- Authority
- SG
- Singapore
- Prior art keywords
- producing method
- wafer producing
- wafer
- producing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015112316A JP6472333B2 (en) | 2015-06-02 | 2015-06-02 | Wafer generation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201603714RA true SG10201603714RA (en) | 2017-01-27 |
Family
ID=57352244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201603714RA SG10201603714RA (en) | 2015-06-02 | 2016-05-10 | Wafer producing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10610973B2 (en) |
JP (1) | JP6472333B2 (en) |
KR (1) | KR102459564B1 (en) |
CN (1) | CN106216857B (en) |
DE (1) | DE102016208958A1 (en) |
MY (1) | MY188444A (en) |
SG (1) | SG10201603714RA (en) |
TW (1) | TWI687294B (en) |
Families Citing this family (35)
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JP6358941B2 (en) | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | Wafer generation method |
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JP6358941B2 (en) | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | Wafer generation method |
JP5917677B1 (en) | 2014-12-26 | 2016-05-18 | エルシード株式会社 | Processing method of SiC material |
JP6395613B2 (en) | 2015-01-06 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6395633B2 (en) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6395634B2 (en) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6425606B2 (en) | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | Wafer production method |
JP6482389B2 (en) | 2015-06-02 | 2019-03-13 | 株式会社ディスコ | Wafer generation method |
JP6482423B2 (en) | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | Wafer generation method |
JP6486240B2 (en) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | Wafer processing method |
JP6486239B2 (en) | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | Wafer processing method |
JP6602207B2 (en) | 2016-01-07 | 2019-11-06 | 株式会社ディスコ | Method for generating SiC wafer |
-
2015
- 2015-06-02 JP JP2015112316A patent/JP6472333B2/en active Active
-
2016
- 2016-05-02 TW TW105113653A patent/TWI687294B/en active
- 2016-05-10 SG SG10201603714RA patent/SG10201603714RA/en unknown
- 2016-05-12 MY MYPI2016701705A patent/MY188444A/en unknown
- 2016-05-24 DE DE102016208958.7A patent/DE102016208958A1/en active Pending
- 2016-05-25 KR KR1020160063911A patent/KR102459564B1/en active IP Right Grant
- 2016-05-26 US US15/165,259 patent/US10610973B2/en active Active
- 2016-05-31 CN CN201610373433.0A patent/CN106216857B/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20160142231A (en) | 2016-12-12 |
CN106216857B (en) | 2019-07-30 |
TWI687294B (en) | 2020-03-11 |
KR102459564B1 (en) | 2022-10-26 |
US10610973B2 (en) | 2020-04-07 |
TW201700249A (en) | 2017-01-01 |
MY188444A (en) | 2021-12-09 |
DE102016208958A1 (en) | 2016-12-08 |
JP6472333B2 (en) | 2019-02-20 |
JP2016225535A (en) | 2016-12-28 |
CN106216857A (en) | 2016-12-14 |
US20160354862A1 (en) | 2016-12-08 |
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