JP4731050B2 - Processing method of semiconductor wafer - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for processing a semiconductor wafer in which a large number of rectangular regions partitioned by streets arranged in a lattice pattern are arranged on the surface, and a semiconductor circuit is applied to each of the rectangular regions.
[0002]
As is well known to those skilled in the art, in the manufacture of semiconductor devices, a large number of rectangular areas are defined on the surface of a semiconductor wafer by streets arranged in a lattice pattern, and a semiconductor circuit is applied to each of the rectangular areas. Then, the back surface of the semiconductor wafer is ground to reduce its thickness, and the semiconductor wafer is cut along the streets, and the rectangular regions are individually separated to form semiconductor chips.
[0003]
Usually, the grinding means is applied to the back surface of the semiconductor wafer to reduce the thickness of the semiconductor wafer to a required value, and then the cutting means is applied from the surface of the semiconductor wafer to cut the semiconductor wafer along the street. The rectangular areas are separated individually. When cutting a semiconductor wafer along a street, a mounting opening is provided at the center so that the rectangular regions that have been individually separated can be transported and processed after the cutting. It is attached to the frame it has via the attachment tape. More specifically, a tape extending across the mounting opening is mounted on the frame, and the back surface of the semiconductor wafer is attached to the mounting tape in the mounting opening, thus mounting the semiconductor wafer on the frame. Next, the individually separated rectangular regions, that is, semiconductor chips are picked up and transported to a required place.
[0004]
Recently, first, a cutting means is applied from the surface of the semiconductor wafer to form a groove having a required depth along the street, and then a grinding means is applied to the back surface of the semiconductor wafer to obtain the thickness of the semiconductor wafer. It is also practiced to reduce each of the rectangular areas due to the presence of the grooves. Also in this case, when grinding the back surface of the semiconductor wafer, a mounting opening is provided in the center portion so that the rectangular regions separated individually can be transported and cleaned. It is attached to the frame via attachment tape. More specifically, a tape extending across the mounting opening is mounted on the frame, and the surface of the semiconductor wafer is attached to the mounting tape in the mounting opening, thus mounting the semiconductor wafer on the frame. Next, the individually separated rectangular regions, that is, semiconductor chips are picked up and transported to a required place.
[0005]
[Problems to be solved by the invention]
In order to form extremely small and lightweight semiconductor chips, it is recently desirable to reduce the thickness of the semiconductor wafer by grinding the back surface of the semiconductor wafer, for example, 150 μm or less, especially 50 μm or less. It is not rare that However, if the thickness of a semiconductor wafer made of silicon, for example, is made extremely thin, the rigidity of the semiconductor wafer becomes extremely small, making it difficult to grind without damaging it, and transporting the ground semiconductor wafer at the required speed. It is also extremely difficult to do. In order to prevent the semiconductor wafer from being damaged during grinding, the semiconductor wafer is ground by applying a cutting means to the back surface of the semiconductor wafer with a protective substrate or a tape attached to the surface of the semiconductor wafer. You can do it. However, when a protective substrate or a tape is attached to the surface of the semiconductor wafer, in a processing process performed after the back grinding process of the semiconductor wafer, for example, cutting along the street or picking up individually separated rectangular areas However, it is necessary to directly access the semiconductor wafer from its surface, but such access is obstructed by the protective substrate or the protective tape.
[0006]
The present invention has been made in view of the above facts, and its main technical object is to perform back surface grinding without damaging the semiconductor wafer even when the thickness of the semiconductor wafer is significantly reduced by back surface grinding of the semiconductor wafer. A new and improved semiconductor that can be carried out, can transport the semiconductor wafer as easily as required, and can also freely access the surface of the semiconductor wafer after backside grinding of the wafer It is to provide a wafer processing method.
[0007]
[Means for Solving the Problems]
As a result of intensive studies, the present inventors have made a semiconductor wafer through a mounting tape attached to the surface of the semiconductor wafer on a frame having a mounting opening at the center prior to the grinding step of grinding the back surface of the semiconductor wafer. In addition to this, between the grinding step and the subsequent processing step of accessing from the surface of the semiconductor wafer and applying the required processing, (1) the semiconductor wafer is detached from the previous frame and mounting tape, Attach to a separate frame having a mounting opening in the center via a mounting tape affixed to the back side of the semiconductor wafer, or perform a transfer process, or (2) the semiconductor wafer to the previous frame itself, the semiconductor A mounting tape changer that is mounted via a mounting tape that is attached to the back of the semiconductor wafer instead of the mounting tape that is attached to the front of the wafer. Perform, we found that it is possible to achieve the above principal object by.
[0008]
That is, according to one aspect of the present invention, as a method of processing a semiconductor wafer that achieves the main technical problem described above, a large number of rectangular regions partitioned by streets arranged in a lattice pattern are disposed on the surface. In each of the rectangular regions, a semiconductor wafer processing method in which a semiconductor circuit is applied,
A peripheral portion of a first mounting tape that extends across the mounting opening is formed on a first frame that includes an outer ring member and an inner ring member and has a mounting opening in the center. The outer ring member and the inner ring A mounting step of mounting by being sandwiched between members and mounting the surface of the semiconductor wafer in the mounting opening of the first frame by attaching the surface of the semiconductor wafer to the first mounting tape with an adhesive ;
The surface of the semiconductor wafer mounted on the first frame is adsorbed onto the chuck means via the first mounting tape, and the semiconductor wafer is ground by applying a grinding means to the back surface of the semiconductor wafer. A grinding process that reduces the thickness of the wafer;
After the grinding step, a semiconductor wafer mounted on the first frame is mounted on a second frame having a mounting opening in the center and is transferred from the first frame,
Mounting a second mounting tape extending across the mounting opening on one side of the second frame;
Attaching the semiconductor wafer attached to the first attachment tape in the attachment opening of the second frame by attaching the back surface of the semiconductor wafer to the second attachment tape;
After or before mounting the semiconductor wafer on the second frame, separating the outer ring member and the inner ring member of the first frame to separate the first frame from the semiconductor wafer; And after or before mounting the semiconductor wafer on the second frame, the adhesive property of the adhesive disappears or is reduced to allow the first mounting tape to be detached from the semiconductor wafer.
A transfer process comprising:
A processing step of accessing the semiconductor wafer mounted on the second frame from its surface and performing a required processing;
A method for processing a semiconductor wafer is provided.
[0009]
Preferably, in the transferring step, after the back surface of the semiconductor wafer is attached to the second mounting tape, the first mounting tape is detached from the semiconductor wafer.
[0010]
According to another aspect of the present invention, as a method for processing a semiconductor wafer that achieves the main technical problem, a plurality of rectangular regions partitioned by streets arranged in a lattice pattern are disposed on the surface. In each of the rectangular areas, a semiconductor wafer processing method in which a semiconductor circuit is applied,
A first mounting tape that extends across the mounting opening is mounted on one side of a frame having a mounting opening in the center, and the surface of the semiconductor wafer is adhered to the first mounting tape with an adhesive . A mounting step of mounting in the mounting opening of the first frame;
The thickness of the semiconductor wafer is obtained by adsorbing the surface of the semiconductor wafer mounted on the frame onto the chuck means via the first mounting tape and grinding the back surface of the semiconductor wafer by applying a grinding means to the back surface of the semiconductor wafer. Grinding process to reduce the thickness,
After the grinding step, a second mounting tape extending across the mounting opening is mounted on the other surface of the frame, and the back surface of the semiconductor wafer is attached to the second mounting tape. After pasting the back surface to the second mounting tape , cutting the first mounting tape by cutting means outside the outer peripheral edge of the semiconductor wafer and inside the inner peripheral edge of the mounting opening of the frame, A mounting tape replacement step for eliminating or reducing the adhesiveness of the adhesive and detaching the first mounting tape from the semiconductor wafer;
There is provided a semiconductor wafer processing method characterized by including a processing step of accessing a semiconductor wafer from its surface and performing a required processing after the mounting tape exchanging step.
[0012]
In a preferred embodiment of the present invention, in the processing step, the back surface of the semiconductor wafer is adsorbed on the chuck means via the first mounting tape, and the cutting means is operated from the surface of the semiconductor wafer to bring the semiconductor wafer into the street. It is the cutting process cut | disconnected along. Alternatively, in the semiconductor wafer mounted on the first frame, a groove having a required depth is cut from the surface along the street, and when the semiconductor wafer is ground in the grinding process, the semiconductor wafer has a number of rectangular shapes. The processing step is a pick-up step of picking up each of the rectangular regions that are separated into regions. In the grinding step, the thickness of the semiconductor wafer is reduced to 150 μm or less.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of a semiconductor wafer processing method of the present invention will be described in more detail with reference to the accompanying drawings.
[0014]
FIG. 1 shows a typical example of a semiconductor wafer to which the processing method of the present invention can be applied. The illustrated semiconductor wafer 2 has a shape in which a straight edge 4 called an orientation flat is formed on a part of a disk shape, and a large number of rectangular regions 8 are defined on the surface by streets 6 arranged in a lattice pattern. Has been. Each rectangular area 8 is provided with a semiconductor circuit.
[0015]
In the processing method of the present invention, a mounting process is performed. In this mounting step, the semiconductor wafer 2 is mounted on the frame 12 (first frame) via the mounting tape 10 as shown in FIG. As clearly understood by referring to FIG. 3 in conjunction with FIG. 2, the frame 12 in the illustrated embodiment is composed of an outer ring member 12a and an inner ring 12b member that can be formed from a suitable synthetic resin or metal. It has a circular mounting opening 14 at its center. The inner diameter of the outer ring member 12a is substantially the same as or slightly smaller than the outer diameter of the inner ring member 12b, and it is convenient that the outer ring member 12a and the inner ring member 12b are detachably fitted by an interference fit. . The mounting tape 10, which can be formed of a synthetic resin film or sheet such as a polyester film or sheet, is sandwiched between the outer ring member 12 a and the inner ring member 12 b of the frame 12, and is attached to the frame 12. It is mounted and extends across the mounting opening 14 of the frame 12. An adhesive is applied to one surface (the upper surface in FIG. 2) of the mounting tape 10. Such an adhesive is an ultraviolet curable adhesive that is cured by irradiation with ultraviolet rays and loses or decreases its adhesiveness, or a thermosetting adhesive that is cured by heating and loses or decreases its adhesiveness. Convenient. The semiconductor wafer 2 is positioned in the mounting opening 14 of the frame 12 with its front surface facing downward, in other words, with its back surface exposed upward, and is adhered to the upper surface of the mounting tape 10. The semiconductor wafer 2 is mounted on the frame 12.
[0016]
Next, a grinding process is performed. Referring to FIG. 3, the chucking means 16 including a porous chuck plate is used in the grinding process. The chuck means 16 has an outer diameter somewhat smaller than the mounting opening 14 of the frame 12, and the semiconductor wafer 2 adhered on the mounting tape 10 is placed on the chuck means 16. 12 is positioned outside the chuck means 16. The chuck means 16 is communicated with a vacuum source, whereby the surface of the semiconductor wafer 2 is attracted onto the chuck means 16 via the mounting tape 10. Then, the grinding means 18 is applied to the back surface of the semiconductor wafer 2 so that the back surface of the semiconductor wafer 2 is ground, and the thickness of the semiconductor wafer 2 is reduced to a predetermined value. The grinding means 18 can be constituted by an annular grinding tool having a grinding tool containing diamond particles on its lower surface. When grinding the back surface of the semiconductor wafer 2, the chuck means 16 holding the semiconductor wafer 2 has its central axis line. , The grinding means 18 is rotated about its central axis, and the grinding means 18 is pressed against the back surface of the semiconductor wafer 2. In such a grinding process, the semiconductor wafer 2 is reinforced by the mounting tape 10 attached to the surface of the semiconductor wafer 2, so that the semiconductor wafer 2 can be damaged without causing problems such as damage to the semiconductor wafer 2. 2 can be ground to a thickness of, for example, 150 μm or less, in particular 50 μm or less. Grinding of the back surface of the semiconductor wafer 2 as described above can be conveniently performed by a grinding machine sold under the trade name “DFG841” by DISCO Corporation. When such a grinding machine is used, a plurality of semiconductor wafers 2 mounted on the frame 12 via the mounting tape 10 are accommodated in a well-known cassette (not shown) in the vertical direction. Then, it can be supplied to a grinding machine.
[0017]
In the processing method of the present invention, it is important to perform a transfer process following the grinding process. In the transfer process shown in FIG. 4, first, as shown in FIG. 4A, the inner ring member 12b and the semiconductor wafer 2 are supported from below by the support base 20, and the outer ring member 12a. Is forced downward to separate the outer ring member 12a and the inner ring member 12b. At this time, when the peripheral edge of the mounting tape 10 is relatively firmly attached to the inner surface of the outer ring member 12a, the peripheral edge of the mounting tape 10 is forced downward together with the outer ring member 12a. Can be separated from the main part. When the outer ring member 12a and the inner ring member 12b are separated, the inner ring member 12b is also separated from the semiconductor wafer 2 and the mounting tape 10 attached to the surface thereof. Next, the semiconductor wafer 2 supported on the support base 20 is mounted on a frame 22 (second frame) separate from the frame 12 via a mounting tape 24. As shown in FIG. 4B, the frame 22 is composed of an annular member that can be formed of an appropriate synthetic resin or metal, and a circular mounting opening 26 is formed at the center thereof. A mounting tape 24 extending across the mounting opening 26 is attached to one side, that is, the upper surface of the frame 22. The mounting tape 24 can be composed of an appropriate synthetic resin film or sheet in the same manner as the mounting tape 10, and an adhesive that is preferably an ultraviolet curable adhesive or a heat curable adhesive is provided on one side, that is, the lower surface. The mounting tape 24 is adhered to one side of the frame 22 with the adhesive. The frame 22 to which the mounting tape 24 is bonded is lowered and positioned on the semiconductor wafer 2 on the support base 20 in the mounting opening 26, and the back surface of the semiconductor wafer 2 is bonded to the lower surface of the mounting tape 24. Thereafter, as shown in FIG. 4C, the back surface of the semiconductor wafer 2 is adsorbed by the suction means 28 including a porous disk through the mounting tape 24, and is adhered to the front surface of the semiconductor wafer 2 and the semiconductor wafer 2. The attached mounting tape 10 is exposed downward. Then, the mounting tape 10 is irradiated with ultraviolet rays or the mounting tape 10 is heated to cure the pressure-sensitive adhesive applied to one surface, that is, the upper surface of the mounting tape 10, thereby eliminating or reducing the adhesiveness. Thereafter, one edge portion of the mounting tape 10 is gradually pulled toward the other edge portion to be peeled from the surface of the semiconductor wafer 2. Thus, the frame 12 and the mounting tape 10 are detached from the semiconductor wafer 2 and the semiconductor wafer 2 is mounted on the frame 22 via the mounting tape 24. FIG. 5 illustrates the semiconductor wafer 2 mounted on the frame 22 via the mounting tape 24 with its surface facing upward.
[0018]
Thus, in the embodiment shown in FIG. 4, the mounting tape 10 is sucked by the suction means 28 so that the surface of the semiconductor wafer 2 and the mounting tape 10 adhered thereto are exposed downward. Although peeled off from the surface of the semiconductor wafer 2, if desired, the semiconductor wafer 2 is placed on an appropriate suction means with the surface facing upward, and the surface of the semiconductor wafer 2 and attached to it. It is also possible to peel the mounting tape 10 from the surface of the semiconductor wafer 2 by exposing the mounting tape 10 to the upper side. In the embodiment shown in FIG. 4, the mounting tape 10 is peeled off from the surface of the semiconductor wafer 2 after the mounting tape 24 is attached to the back surface of the semiconductor wafer 2. The mounting tape 24 can be attached to the back surface of the semiconductor wafer 2 after peeling from the front surface.
[0019]
When the transfer process is completed, a process process is performed in which the semiconductor wafer 2 is accessed from its surface and a required process is performed. In the illustrated embodiment, as shown in FIG. 6, the back surface of the semiconductor wafer 2 is adsorbed onto the chuck means 30 via the mounting tape 24 attached thereto, and the cutting means 32 is attached to the surface of the semiconductor wafer 2. Then, the semiconductor wafer 2 is cut along the streets 6. The chuck means 30 includes a porous chuck plate that is communicated with a vacuum source and sucks the back surface of the semiconductor wafer 2 through the mounting tape 24. The cutting means 32 can be conveniently constructed from a thin disk-shaped blade that can be formed by bonding diamond abrasive grains with a suitable binder. The cutting means 32 is centered on its central axis. By relatively moving the chuck means 30 and the cutting means 32 along the streets 6 while rotating at high speed, the rectangular regions 8 can be separated individually by cutting along the streets 6 of the semiconductor wafer 2. . The mounting tape 24 is maintained without being cut. Therefore, even if the rectangular regions 8 are separated individually, the back surface of each rectangular region 8 is stuck to the mounting tape 24 and is held by the frame 22. After performing such a cutting process, the individually separated rectangular regions 8 can be washed and then individually picked up and transported to a required place. The cutting of the semiconductor wafer 2 as described above can be conveniently performed by, for example, a cutting machine (also referred to as a dicer) sold by Disco Corporation under the trade name “DFD641”. Even when such a cutting machine is used, a plurality of semiconductor wafers 2 mounted on the frame 22 via the mounting tape 24 are accommodated in a well-known cassette (not shown) in the vertical direction. Then, it can be supplied to a grinding machine.
[0020]
In the illustrated embodiment, the semiconductor wafer 2 is cut along the streets 6 after grinding the back surface of the semiconductor wafer 2 to reduce the thickness of the semiconductor wafer 2 to a predetermined value. Prior to the grinding step shown in FIG. 6, a groove having a required depth can be formed along the street 6 on the surface of the semiconductor wafer 2 (the formation of such a groove is the same as the cutting step described with reference to FIG. 6). Can be accomplished by a similar cutting process). In this case, if the thickness of the semiconductor wafer 2 is reduced by grinding the back surface of the semiconductor wafer 2 in the grinding step shown in FIG. 3, the semiconductor wafer 2 is separated into individual rectangular regions 8 due to the presence of the grooves. The The separated rectangular area 8 is continuously mounted on the frame 12 via the mounting tape 10. Then, when the transfer process as described with reference to FIG. 4 is performed, a state in which each of the individually separated rectangular regions 8 is attached to the frame 22 via the attachment tape 24 is established. In such a case, as a processing step performed after the transfer step, the individually separated rectangular areas 8 are individually picked up and transported to a required place (for example, on the mounting base on which the rectangular area 8 is to be mounted). What is necessary is just to perform a known pick-up process.
[0021]
FIG. 7 shows a modification of the frame used in place of the frame 12 described with reference to FIGS. 2 and 3 in the mounting process. The frame 112 shown in FIG. 7 is composed of an annular member that can be formed from an appropriate synthetic resin or metal, and a circular mounting opening 114 is formed at the center thereof (the frame 112 is 4 may be substantially the same as the frame 22 shown in FIGS. The semiconductor wafer 2 is mounted on the frame 112 via the mounting tape 110. The mounting tape 110 can be composed of a synthetic resin film or sheet, and an adhesive that is advantageously an ultraviolet curable adhesive or a heat curable adhesive is applied to both sides thereof. The mounting tape 110 extends over the mounting opening 114 of the frame 112, and one side or the lower surface of the mounting tape 110 is attached to one side or the upper surface of the frame 112. The semiconductor wafer 2 is disposed in the mounting opening 114 of the frame 112 with its surface facing downward, and is adhered to the upper surface of the mounting tape 110. Even when such a frame 112 is used, the back surface of the semiconductor wafer 2 can be ground in substantially the same manner as described with reference to FIG. When the frame 112 is detached from the semiconductor wafer 2 in the transfer process, as shown by a two-dot chain line 115 in FIG. 7, outside the outer periphery of the semiconductor wafer 2 and inside the inner periphery of the mounting opening 114, The mounting tape 110 can be cut by an appropriate cutting means (not shown) such as a cutting blade. Other operation modes in the transfer process and the cutting mode of the semiconductor wafer 2 may be the same as those described with reference to FIGS.
[0022]
In the embodiment illustrated in FIG. 7, the frame 112 is adhered to one side or lower surface of the mounting tape 110 and the semiconductor wafer 2 is adhered to the other surface or upper surface of the mounting tape 110, but is illustrated in FIG. 8. As described above, both the frame 112 and the semiconductor wafer 2 can be attached to the same surface (upper surface) of the mounting tape 110. Therefore, the mounting tape 110 may have a form in which an adhesive is applied only to one side, that is, the upper surface.
[0023]
FIG. 9 shows a mounting tape exchange process performed in place of the transfer process shown in FIG. In the mounting tape changing step, as shown in FIG. 9A, the semiconductor wafer 2 whose back surface is ground in the grinding step and the semiconductor 112 on which the semiconductor 2 is mounted via the mounting tape 110 (the frame 112). May be the same as the frame 112 shown in FIG. 8), but is placed on an appropriate support base 120 with the back surface of the semiconductor wafer 2 facing upward. A mounting tape 124 separate from the mounting tape 110 is attached to the back surface of the semiconductor wafer 2 and the upper surface of the frame 112. Such a mounting tape 124 may also be formed from a synthetic resin film or sheet coated with an adhesive, which is advantageously an ultraviolet curable adhesive or a heat curable adhesive, on one side, that is, the lower surface. Next, as illustrated in FIG. 9B, the front and back of the frame 112, the semiconductor wafer 2, and the mounting tapes 110 and 124 are reversed and placed on the support base 120. Thereafter, the mounting tape 110 is cut by an appropriate cutting means such as a rotary cutting blade 125 outside the outer peripheral edge of the semiconductor wafer 2 and inside the inner peripheral edge of the mounting opening 114 of the frame 112. Next, the adhesive tape 110 is irradiated with ultraviolet rays or heated to cure the adhesive applied to one side of the mounting tape 110 (that is, the lower surface in FIG. 9B) to lose or reduce its adhesiveness. Let me. Then, the mounting tape 110 is peeled from the surface of the semiconductor wafer 2 by gradually pulling one edge portion toward the other edge portion. Thus, a state in which the semiconductor wafer 2 is mounted on the frame 112 via the mounting tape 124 is established. This state is substantially the same as the state shown in FIG. 5, and the mounting tape 112 is attached to one side of the frame 112 (the lower surface in FIG. 9B) and the back surface of the semiconductor wafer 2 (FIG. 9B). ) Is attached to the lower surface).
[0024]
After the mounting tape changing process described with reference to FIG. 9 is completed, the cutting process can be performed in the manner described with reference to FIG. As can be easily understood by comparing FIG. 4 and FIG. 9, when performing the mounting tape replacement process instead of the transfer process, the frame 112 used in the grinding process is used as a processing process such as a cutting process. Can be used, and there is no need to prepare a frame separate from the frame 112.
[0025]
【The invention's effect】
According to the semiconductor wafer processing method of the present invention, even when the thickness of the semiconductor wafer is significantly reduced by grinding the back surface of the semiconductor wafer, the back surface grinding can be performed without damaging the semiconductor wafer. It can be transported sufficiently easily as required, and it is also possible to freely access the surface of the semiconductor wafer after backside grinding of the wafer.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a typical example of a semiconductor wafer provided with a processing method of the present invention.
FIG. 2 is a perspective view showing a state in which a semiconductor wafer is mounted on a frame via a mounting tape in a mounting step in the processing method of the present invention.
FIG. 3 is a simplified cross-sectional view showing a grinding step in the processing method of the present invention.
FIG. 4 is a simplified cross-sectional view showing a transfer step in the processing method of the present invention.
FIG. 5 is a perspective view showing a state in which a semiconductor wafer is mounted on a frame via a mounting tape after a transfer step in the processing method of the present invention.
FIG. 6 is a simplified cross-sectional view showing a cutting step (processing step) in the processing method of the present invention.
FIG. 7 is a perspective view showing a state in which a semiconductor wafer is mounted on a modified example of a frame via a mounting tape in a mounting step in the processing method of the present invention.
FIG. 8 is a perspective view showing another state in which the semiconductor wafer is mounted on the modified example of the frame via the mounting tape in the mounting step in the processing method of the present invention.
FIG. 9 is a simplified cross-sectional view showing a mounting tape replacement process performed in place of the transfer process in the processing method of the present invention.
[Explanation of symbols]
2: Semiconductor wafer 6: Street 8: Rectangular area 10: Mounting tape 12: Frame 14: Mounting opening 16: Chuck means 18: Grinding means 22: Frame 24: Mounting tape 26: Mounting opening 30: Chuck means 32: Cutting means 110 : Mounting tape 112: Frame 114: Mounting opening 124: Mounting tape

Claims (6)

A large number of rectangular regions partitioned by streets arranged in a lattice pattern are arranged on the surface, and each of the rectangular regions is a semiconductor wafer processing method in which a semiconductor circuit is applied.
A peripheral portion of a first mounting tape that extends across the mounting opening is formed on a first frame that includes an outer ring member and an inner ring member and has a mounting opening in the center. The outer ring member and the inner ring A mounting step of mounting by being sandwiched between members and mounting the surface of the semiconductor wafer in the mounting opening of the first frame by attaching the surface of the semiconductor wafer to the first mounting tape with an adhesive ;
The surface of the semiconductor wafer mounted on the first frame is adsorbed onto the chuck means via the first mounting tape, and the semiconductor wafer is ground by applying a grinding means to the back surface of the semiconductor wafer. A grinding process that reduces the thickness of the wafer;
After the grinding step, a semiconductor wafer mounted on the first frame is mounted on a second frame having a mounting opening in the center and is transferred from the first frame,
Mounting a second mounting tape extending across the mounting opening on one side of the second frame;
Attaching the semiconductor wafer attached to the first attachment tape in the attachment opening of the second frame by attaching the back surface of the semiconductor wafer to the second attachment tape;
After or before mounting the semiconductor wafer on the second frame, separating the outer ring member and the inner ring member of the first frame to separate the first frame from the semiconductor wafer; And after or before mounting the semiconductor wafer on the second frame, the adhesive property of the adhesive disappears or is reduced to allow the first mounting tape to be detached from the semiconductor wafer.
A transfer process comprising:
A processing step of accessing the semiconductor wafer mounted on the second frame from its surface and performing a required processing;
A method for processing a semiconductor wafer, comprising:   2. The semiconductor wafer processing method according to claim 1, wherein, in the transferring step, the first mounting tape is detached from the semiconductor wafer after the back surface of the semiconductor wafer is adhered to the second mounting tape. A large number of rectangular regions partitioned by streets arranged in a lattice pattern are arranged on the surface, and each of the rectangular regions is a semiconductor wafer processing method in which a semiconductor circuit is applied.
A first mounting tape that extends across the mounting opening is mounted on one side of a frame having a mounting opening in the center, and the surface of the semiconductor wafer is adhered to the first mounting tape with an adhesive . A mounting step of mounting in the mounting opening of the first frame;
The thickness of the semiconductor wafer is obtained by adsorbing the surface of the semiconductor wafer mounted on the frame onto the chuck means via the first mounting tape and grinding the back surface of the semiconductor wafer by applying a grinding means to the back surface of the semiconductor wafer. Grinding process to reduce the thickness,
After the grinding step, a second mounting tape extending across the mounting opening is mounted on the other surface of the frame, and the back surface of the semiconductor wafer is attached to the second mounting tape. After pasting the back surface to the second mounting tape , cutting the first mounting tape by cutting means outside the outer peripheral edge of the semiconductor wafer and inside the inner peripheral edge of the mounting opening of the frame, A mounting tape replacement step for eliminating or reducing the adhesiveness of the adhesive and detaching the first mounting tape from the semiconductor wafer;
And a processing step of accessing the semiconductor wafer from its surface and performing a required processing after the mounting tape exchanging step. The processing step is a cutting step in which the back surface of the semiconductor wafer is adsorbed on the chuck means via the first mounting tape, and the semiconductor wafer is cut along the street by applying a cutting means from the surface of the semiconductor wafer. A method for processing a semiconductor wafer according to any one of claims 1 to 3 . In the semiconductor wafer mounted on the first frame, a groove having a required depth is cut from the surface along the street. When the semiconductor wafer is ground in the grinding process, the semiconductor wafer is divided into a number of rectangular regions. are separated, the processing step is a Pikkuakku step of picking up the respective rectangular areas are individually separated, processing method of a semiconductor wafer according to any one of claims 1 to 3. The grinding allowed to the 150μm or less the thickness of the semiconductor wafer in the process, the semiconductor wafer processing method according to any one of claims 1 to 5.

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