US10378106B2
(en)
|
2008-11-14 |
2019-08-13 |
Asm Ip Holding B.V. |
Method of forming insulation film by modified PEALD
|
US9394608B2
(en)
|
2009-04-06 |
2016-07-19 |
Asm America, Inc. |
Semiconductor processing reactor and components thereof
|
US8802201B2
(en)
|
2009-08-14 |
2014-08-12 |
Asm America, Inc. |
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
|
US9312155B2
(en)
|
2011-06-06 |
2016-04-12 |
Asm Japan K.K. |
High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
|
US9793148B2
(en)
|
2011-06-22 |
2017-10-17 |
Asm Japan K.K. |
Method for positioning wafers in multiple wafer transport
|
JP5959307B2
(ja)
*
|
2011-06-22 |
2016-08-02 |
株式会社日立国際電気 |
半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
|
US10364496B2
(en)
|
2011-06-27 |
2019-07-30 |
Asm Ip Holding B.V. |
Dual section module having shared and unshared mass flow controllers
|
US10854498B2
(en)
|
2011-07-15 |
2020-12-01 |
Asm Ip Holding B.V. |
Wafer-supporting device and method for producing same
|
US20130023129A1
(en)
|
2011-07-20 |
2013-01-24 |
Asm America, Inc. |
Pressure transmitter for a semiconductor processing environment
|
US20130217243A1
(en)
*
|
2011-09-09 |
2013-08-22 |
Applied Materials, Inc. |
Doping of dielectric layers
|
US9017481B1
(en)
|
2011-10-28 |
2015-04-28 |
Asm America, Inc. |
Process feed management for semiconductor substrate processing
|
US8728955B2
(en)
*
|
2012-02-14 |
2014-05-20 |
Novellus Systems, Inc. |
Method of plasma activated deposition of a conformal film on a substrate surface
|
US8946830B2
(en)
|
2012-04-04 |
2015-02-03 |
Asm Ip Holdings B.V. |
Metal oxide protective layer for a semiconductor device
|
US9558931B2
(en)
|
2012-07-27 |
2017-01-31 |
Asm Ip Holding B.V. |
System and method for gas-phase sulfur passivation of a semiconductor surface
|
US9659799B2
(en)
|
2012-08-28 |
2017-05-23 |
Asm Ip Holding B.V. |
Systems and methods for dynamic semiconductor process scheduling
|
US9021985B2
(en)
|
2012-09-12 |
2015-05-05 |
Asm Ip Holdings B.V. |
Process gas management for an inductively-coupled plasma deposition reactor
|
US9324811B2
(en)
|
2012-09-26 |
2016-04-26 |
Asm Ip Holding B.V. |
Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
|
US10714315B2
(en)
|
2012-10-12 |
2020-07-14 |
Asm Ip Holdings B.V. |
Semiconductor reaction chamber showerhead
|
US9640416B2
(en)
|
2012-12-26 |
2017-05-02 |
Asm Ip Holding B.V. |
Single-and dual-chamber module-attachable wafer-handling chamber
|
JP5925673B2
(ja)
*
|
2012-12-27 |
2016-05-25 |
東京エレクトロン株式会社 |
シリコン膜の成膜方法および成膜装置
|
US20160376700A1
(en)
|
2013-02-01 |
2016-12-29 |
Asm Ip Holding B.V. |
System for treatment of deposition reactor
|
US9589770B2
(en)
|
2013-03-08 |
2017-03-07 |
Asm Ip Holding B.V. |
Method and systems for in-situ formation of intermediate reactive species
|
US9484191B2
(en)
|
2013-03-08 |
2016-11-01 |
Asm Ip Holding B.V. |
Pulsed remote plasma method and system
|
US9564309B2
(en)
|
2013-03-14 |
2017-02-07 |
Asm Ip Holding B.V. |
Si precursors for deposition of SiN at low temperatures
|
US9824881B2
(en)
*
|
2013-03-14 |
2017-11-21 |
Asm Ip Holding B.V. |
Si precursors for deposition of SiN at low temperatures
|
TW201441408A
(zh)
*
|
2013-03-15 |
2014-11-01 |
Applied Materials Inc |
包含氮化矽之膜的電漿輔助原子層沉積
|
US9796739B2
(en)
*
|
2013-06-26 |
2017-10-24 |
Versum Materials Us, Llc |
AZA-polysilane precursors and methods for depositing films comprising same
|
US8993054B2
(en)
|
2013-07-12 |
2015-03-31 |
Asm Ip Holding B.V. |
Method and system to reduce outgassing in a reaction chamber
|
US9018111B2
(en)
|
2013-07-22 |
2015-04-28 |
Asm Ip Holding B.V. |
Semiconductor reaction chamber with plasma capabilities
|
JP6082712B2
(ja)
*
|
2013-07-31 |
2017-02-15 |
東京エレクトロン株式会社 |
シリコン膜の成膜方法および薄膜の成膜方法
|
US9793115B2
(en)
|
2013-08-14 |
2017-10-17 |
Asm Ip Holding B.V. |
Structures and devices including germanium-tin films and methods of forming same
|
US9284642B2
(en)
*
|
2013-09-19 |
2016-03-15 |
Asm Ip Holding B.V. |
Method for forming oxide film by plasma-assisted processing
|
US9240412B2
(en)
|
2013-09-27 |
2016-01-19 |
Asm Ip Holding B.V. |
Semiconductor structure and device and methods of forming same using selective epitaxial process
|
US9920077B2
(en)
|
2013-09-27 |
2018-03-20 |
L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof
|
US9905415B2
(en)
*
|
2013-10-03 |
2018-02-27 |
Versum Materials Us, Llc |
Methods for depositing silicon nitride films
|
US9556516B2
(en)
|
2013-10-09 |
2017-01-31 |
ASM IP Holding B.V |
Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
|
US11549181B2
(en)
|
2013-11-22 |
2023-01-10 |
Applied Materials, Inc. |
Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
|
US10179947B2
(en)
|
2013-11-26 |
2019-01-15 |
Asm Ip Holding B.V. |
Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
|
US10683571B2
(en)
|
2014-02-25 |
2020-06-16 |
Asm Ip Holding B.V. |
Gas supply manifold and method of supplying gases to chamber using same
|
US10167557B2
(en)
|
2014-03-18 |
2019-01-01 |
Asm Ip Holding B.V. |
Gas distribution system, reactor including the system, and methods of using the same
|
US9447498B2
(en)
|
2014-03-18 |
2016-09-20 |
Asm Ip Holding B.V. |
Method for performing uniform processing in gas system-sharing multiple reaction chambers
|
US11015245B2
(en)
|
2014-03-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Gas-phase reactor and system having exhaust plenum and components thereof
|
US20150303060A1
(en)
*
|
2014-04-16 |
2015-10-22 |
Samsung Electronics Co., Ltd. |
Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
|
US9404587B2
(en)
|
2014-04-24 |
2016-08-02 |
ASM IP Holding B.V |
Lockout tagout for semiconductor vacuum valve
|
JP2017523134A
(ja)
*
|
2014-05-30 |
2017-08-17 |
ダウ コーニング コーポレーションDow Corning Corporation |
モノアミノシラン化合物
|
WO2015184202A1
(en)
*
|
2014-05-30 |
2015-12-03 |
Dow Corning Corporation |
Diaminosilane compounds
|
EP3149011A4
(en)
*
|
2014-05-30 |
2018-06-13 |
Dow Corning Corporation |
Process of synthesizing diisopropylaminw-disilanes
|
KR101875183B1
(ko)
*
|
2014-06-11 |
2018-07-06 |
(주)디엔에프 |
신규한 아미노실릴아민 화합물 및 원자층 증착법을 이용한 Si-N 결합을 포함하는 절연막의 제조방법
|
US10858737B2
(en)
|
2014-07-28 |
2020-12-08 |
Asm Ip Holding B.V. |
Showerhead assembly and components thereof
|
US9543180B2
(en)
|
2014-08-01 |
2017-01-10 |
Asm Ip Holding B.V. |
Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
|
US9890456B2
(en)
|
2014-08-21 |
2018-02-13 |
Asm Ip Holding B.V. |
Method and system for in situ formation of gas-phase compounds
|
US9576792B2
(en)
|
2014-09-17 |
2017-02-21 |
Asm Ip Holding B.V. |
Deposition of SiN
|
KR102461078B1
(ko)
|
2014-10-02 |
2022-10-28 |
레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 |
Ald/cvd 규소-함유 필름 응용을 위한 오르가노디실란 전구체
|
US10941490B2
(en)
|
2014-10-07 |
2021-03-09 |
Asm Ip Holding B.V. |
Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
|
US9657845B2
(en)
|
2014-10-07 |
2017-05-23 |
Asm Ip Holding B.V. |
Variable conductance gas distribution apparatus and method
|
CN107429391B
(zh)
*
|
2014-10-24 |
2021-06-25 |
弗萨姆材料美国有限责任公司 |
组合物和使用所述组合物沉积含硅膜的方法
|
KR102300403B1
(ko)
|
2014-11-19 |
2021-09-09 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법
|
KR102263121B1
(ko)
|
2014-12-22 |
2021-06-09 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 및 그 제조 방법
|
JP6585724B2
(ja)
*
|
2015-02-06 |
2019-10-02 |
バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー |
炭素ドープケイ素含有膜のための組成物及びそれを使用する方法
|
US9478415B2
(en)
|
2015-02-13 |
2016-10-25 |
Asm Ip Holding B.V. |
Method for forming film having low resistance and shallow junction depth
|
JP2016157893A
(ja)
*
|
2015-02-26 |
2016-09-01 |
東京エレクトロン株式会社 |
カーボン膜の成膜方法および成膜装置
|
US10529542B2
(en)
|
2015-03-11 |
2020-01-07 |
Asm Ip Holdings B.V. |
Cross-flow reactor and method
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
TWI716333B
(zh)
|
2015-03-30 |
2021-01-11 |
法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 |
碳矽烷與氨、胺類及脒類之觸媒去氫耦合
|
US9777025B2
(en)
|
2015-03-30 |
2017-10-03 |
L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude |
Si-containing film forming precursors and methods of using the same
|
US11124876B2
(en)
|
2015-03-30 |
2021-09-21 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Si-containing film forming precursors and methods of using the same
|
US10763103B2
(en)
*
|
2015-03-31 |
2020-09-01 |
Versum Materials Us, Llc |
Boron-containing compounds, compositions, and methods for the deposition of a boron containing films
|
WO2016191199A1
(en)
*
|
2015-05-22 |
2016-12-01 |
Dow Corning Corporation |
Diisopropylaminopentachlorodisilane
|
JP6086942B2
(ja)
|
2015-06-10 |
2017-03-01 |
株式会社日立国際電気 |
半導体装置の製造方法、基板処理装置およびプログラム
|
TWI663281B
(zh)
*
|
2015-06-16 |
2019-06-21 |
美商慧盛材料美國責任有限公司 |
鹵代矽烷化合物的製備方法、組合物及含有其的容器
|
US10458018B2
(en)
|
2015-06-26 |
2019-10-29 |
Asm Ip Holding B.V. |
Structures including metal carbide material, devices including the structures, and methods of forming same
|
US10600673B2
(en)
|
2015-07-07 |
2020-03-24 |
Asm Ip Holding B.V. |
Magnetic susceptor to baseplate seal
|
US9899291B2
(en)
|
2015-07-13 |
2018-02-20 |
Asm Ip Holding B.V. |
Method for protecting layer by forming hydrocarbon-based extremely thin film
|
US10043661B2
(en)
|
2015-07-13 |
2018-08-07 |
Asm Ip Holding B.V. |
Method for protecting layer by forming hydrocarbon-based extremely thin film
|
US10083836B2
(en)
|
2015-07-24 |
2018-09-25 |
Asm Ip Holding B.V. |
Formation of boron-doped titanium metal films with high work function
|
US10087525B2
(en)
|
2015-08-04 |
2018-10-02 |
Asm Ip Holding B.V. |
Variable gap hard stop design
|
US9647114B2
(en)
|
2015-08-14 |
2017-05-09 |
Asm Ip Holding B.V. |
Methods of forming highly p-type doped germanium tin films and structures and devices including the films
|
US10410857B2
(en)
|
2015-08-24 |
2019-09-10 |
Asm Ip Holding B.V. |
Formation of SiN thin films
|
US9711345B2
(en)
|
2015-08-25 |
2017-07-18 |
Asm Ip Holding B.V. |
Method for forming aluminum nitride-based film by PEALD
|
CN117265512A
(zh)
*
|
2015-09-11 |
2023-12-22 |
弗萨姆材料美国有限责任公司 |
用于沉积保形的金属或准金属氮化硅膜的方法和所得的膜
|
US9960072B2
(en)
|
2015-09-29 |
2018-05-01 |
Asm Ip Holding B.V. |
Variable adjustment for precise matching of multiple chamber cavity housings
|
EP3359705B1
(en)
*
|
2015-10-06 |
2021-12-08 |
Versum Materials US, LLC |
Methods for depositing a conformal metal or metalloid silicon nitride film
|
US9909214B2
(en)
|
2015-10-15 |
2018-03-06 |
Asm Ip Holding B.V. |
Method for depositing dielectric film in trenches by PEALD
|
US10211308B2
(en)
|
2015-10-21 |
2019-02-19 |
Asm Ip Holding B.V. |
NbMC layers
|
US10322384B2
(en)
|
2015-11-09 |
2019-06-18 |
Asm Ip Holding B.V. |
Counter flow mixer for process chamber
|
US9455138B1
(en)
|
2015-11-10 |
2016-09-27 |
Asm Ip Holding B.V. |
Method for forming dielectric film in trenches by PEALD using H-containing gas
|
US9905420B2
(en)
|
2015-12-01 |
2018-02-27 |
Asm Ip Holding B.V. |
Methods of forming silicon germanium tin films and structures and devices including the films
|
TWI757260B
(zh)
*
|
2015-12-18 |
2022-03-11 |
中國大陸商南大光電半導體材料有限公司 |
參(二矽烷基)胺
|
US9607837B1
(en)
|
2015-12-21 |
2017-03-28 |
Asm Ip Holding B.V. |
Method for forming silicon oxide cap layer for solid state diffusion process
|
CN108603287B
(zh)
*
|
2015-12-21 |
2021-11-02 |
弗萨姆材料美国有限责任公司 |
用于沉积含硅膜的组合物及使用其的方法
|
US10458016B2
(en)
*
|
2015-12-25 |
2019-10-29 |
Tokyo Electron Limited |
Method for forming a protective film
|
US9627221B1
(en)
|
2015-12-28 |
2017-04-18 |
Asm Ip Holding B.V. |
Continuous process incorporating atomic layer etching
|
US9735024B2
(en)
|
2015-12-28 |
2017-08-15 |
Asm Ip Holding B.V. |
Method of atomic layer etching using functional group-containing fluorocarbon
|
US11139308B2
(en)
|
2015-12-29 |
2021-10-05 |
Asm Ip Holding B.V. |
Atomic layer deposition of III-V compounds to form V-NAND devices
|
US9777373B2
(en)
|
2015-12-30 |
2017-10-03 |
American Air Liquide, Inc. |
Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same
|
US9701695B1
(en)
|
2015-12-30 |
2017-07-11 |
American Air Liquide, Inc. |
Synthesis methods for amino(halo)silanes
|
US10053775B2
(en)
|
2015-12-30 |
2018-08-21 |
L'air Liquide, Societé Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude |
Methods of using amino(bromo)silane precursors for ALD/CVD silicon-containing film applications
|
US10468251B2
(en)
|
2016-02-19 |
2019-11-05 |
Asm Ip Holding B.V. |
Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
|
US9754779B1
(en)
|
2016-02-19 |
2017-09-05 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
US10501866B2
(en)
|
2016-03-09 |
2019-12-10 |
Asm Ip Holding B.V. |
Gas distribution apparatus for improved film uniformity in an epitaxial system
|
US10343920B2
(en)
|
2016-03-18 |
2019-07-09 |
Asm Ip Holding B.V. |
Aligned carbon nanotubes
|
TWI724141B
(zh)
*
|
2016-03-23 |
2021-04-11 |
法商液態空氣喬治斯克勞帝方法硏究開發股份有限公司 |
形成含矽膜之組成物及其製法與用途
|
US9892913B2
(en)
|
2016-03-24 |
2018-02-13 |
Asm Ip Holding B.V. |
Radial and thickness control via biased multi-port injection settings
|
US10190213B2
(en)
|
2016-04-21 |
2019-01-29 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
US10865475B2
(en)
|
2016-04-21 |
2020-12-15 |
Asm Ip Holding B.V. |
Deposition of metal borides and silicides
|
US10087522B2
(en)
|
2016-04-21 |
2018-10-02 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
US10367080B2
(en)
|
2016-05-02 |
2019-07-30 |
Asm Ip Holding B.V. |
Method of forming a germanium oxynitride film
|
US10032628B2
(en)
|
2016-05-02 |
2018-07-24 |
Asm Ip Holding B.V. |
Source/drain performance through conformal solid state doping
|
KR102592471B1
(ko)
|
2016-05-17 |
2023-10-20 |
에이에스엠 아이피 홀딩 비.브이. |
금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
|
US11453943B2
(en)
|
2016-05-25 |
2022-09-27 |
Asm Ip Holding B.V. |
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
|
US10388509B2
(en)
|
2016-06-28 |
2019-08-20 |
Asm Ip Holding B.V. |
Formation of epitaxial layers via dislocation filtering
|
US9859151B1
(en)
|
2016-07-08 |
2018-01-02 |
Asm Ip Holding B.V. |
Selective film deposition method to form air gaps
|
US10612137B2
(en)
|
2016-07-08 |
2020-04-07 |
Asm Ip Holdings B.V. |
Organic reactants for atomic layer deposition
|
US9793135B1
(en)
|
2016-07-14 |
2017-10-17 |
ASM IP Holding B.V |
Method of cyclic dry etching using etchant film
|
US10714385B2
(en)
|
2016-07-19 |
2020-07-14 |
Asm Ip Holding B.V. |
Selective deposition of tungsten
|
KR102354490B1
(ko)
|
2016-07-27 |
2022-01-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
US20180033614A1
(en)
*
|
2016-07-27 |
2018-02-01 |
Versum Materials Us, Llc |
Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
|
US10177025B2
(en)
|
2016-07-28 |
2019-01-08 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9812320B1
(en)
|
2016-07-28 |
2017-11-07 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
KR102532607B1
(ko)
|
2016-07-28 |
2023-05-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 가공 장치 및 그 동작 방법
|
US10395919B2
(en)
|
2016-07-28 |
2019-08-27 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9887082B1
(en)
|
2016-07-28 |
2018-02-06 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US10090316B2
(en)
|
2016-09-01 |
2018-10-02 |
Asm Ip Holding B.V. |
3D stacked multilayer semiconductor memory using doped select transistor channel
|
KR102451069B1
(ko)
*
|
2016-09-01 |
2022-10-05 |
에이에스엠 아이피 홀딩 비.브이. |
탄화수소-기반 극박막을 형성하여 층을 보호하기 위한 방법
|
KR20180034798A
(ko)
|
2016-09-28 |
2018-04-05 |
삼성전자주식회사 |
유전막 형성 방법 및 반도체 장치의 제조 방법
|
US10410943B2
(en)
|
2016-10-13 |
2019-09-10 |
Asm Ip Holding B.V. |
Method for passivating a surface of a semiconductor and related systems
|
US10643826B2
(en)
|
2016-10-26 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for thermally calibrating reaction chambers
|
US11532757B2
(en)
|
2016-10-27 |
2022-12-20 |
Asm Ip Holding B.V. |
Deposition of charge trapping layers
|
US10714350B2
(en)
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
US10229833B2
(en)
|
2016-11-01 |
2019-03-12 |
Asm Ip Holding B.V. |
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
US10643904B2
(en)
|
2016-11-01 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for forming a semiconductor device and related semiconductor device structures
|
US10435790B2
(en)
|
2016-11-01 |
2019-10-08 |
Asm Ip Holding B.V. |
Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
|
US10134757B2
(en)
|
2016-11-07 |
2018-11-20 |
Asm Ip Holding B.V. |
Method of processing a substrate and a device manufactured by using the method
|
KR102546317B1
(ko)
|
2016-11-15 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기체 공급 유닛 및 이를 포함하는 기판 처리 장치
|
US10340135B2
(en)
|
2016-11-28 |
2019-07-02 |
Asm Ip Holding B.V. |
Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
|
US10192734B2
(en)
|
2016-12-11 |
2019-01-29 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude |
Short inorganic trisilylamine-based polysilazanes for thin film deposition
|
KR20180068582A
(ko)
|
2016-12-14 |
2018-06-22 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11447861B2
(en)
|
2016-12-15 |
2022-09-20 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
|
US9916980B1
(en)
|
2016-12-15 |
2018-03-13 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US11581186B2
(en)
|
2016-12-15 |
2023-02-14 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus
|
KR20180070971A
(ko)
|
2016-12-19 |
2018-06-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US10269558B2
(en)
|
2016-12-22 |
2019-04-23 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US10867788B2
(en)
|
2016-12-28 |
2020-12-15 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
WO2018125141A1
(en)
*
|
2016-12-29 |
2018-07-05 |
Intel Corporation |
Methods for incorporating stabilized carbon into silicon nitride films
|
US11390950B2
(en)
|
2017-01-10 |
2022-07-19 |
Asm Ip Holding B.V. |
Reactor system and method to reduce residue buildup during a film deposition process
|
US10049882B1
(en)
|
2017-01-25 |
2018-08-14 |
Samsung Electronics Co., Ltd. |
Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD
|
JP6857503B2
(ja)
*
|
2017-02-01 |
2021-04-14 |
株式会社Kokusai Electric |
半導体装置の製造方法、基板処理装置およびプログラム
|
US10822458B2
(en)
|
2017-02-08 |
2020-11-03 |
Versum Materials Us, Llc |
Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films
|
US11591692B2
(en)
|
2017-02-08 |
2023-02-28 |
Versum Materials Us, Llc |
Organoamino-polysiloxanes for deposition of silicon-containing films
|
US10655221B2
(en)
|
2017-02-09 |
2020-05-19 |
Asm Ip Holding B.V. |
Method for depositing oxide film by thermal ALD and PEALD
|
US10176984B2
(en)
|
2017-02-14 |
2019-01-08 |
Lam Research Corporation |
Selective deposition of silicon oxide
|
US10468261B2
(en)
|
2017-02-15 |
2019-11-05 |
Asm Ip Holding B.V. |
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
|
US10242866B2
(en)
|
2017-03-08 |
2019-03-26 |
Lam Research Corporation |
Selective deposition of silicon nitride on silicon oxide using catalytic control
|
US10529563B2
(en)
|
2017-03-29 |
2020-01-07 |
Asm Ip Holdings B.V. |
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
|
US10283353B2
(en)
|
2017-03-29 |
2019-05-07 |
Asm Ip Holding B.V. |
Method of reforming insulating film deposited on substrate with recess pattern
|
US10103040B1
(en)
|
2017-03-31 |
2018-10-16 |
Asm Ip Holding B.V. |
Apparatus and method for manufacturing a semiconductor device
|
USD830981S1
(en)
|
2017-04-07 |
2018-10-16 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate processing apparatus
|
US10559461B2
(en)
|
2017-04-19 |
2020-02-11 |
Lam Research Corporation |
Selective deposition with atomic layer etch reset
|
KR102457289B1
(ko)
|
2017-04-25 |
2022-10-21 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
US10446393B2
(en)
|
2017-05-08 |
2019-10-15 |
Asm Ip Holding B.V. |
Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
US10892156B2
(en)
|
2017-05-08 |
2021-01-12 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
|
US10504742B2
(en)
|
2017-05-31 |
2019-12-10 |
Asm Ip Holding B.V. |
Method of atomic layer etching using hydrogen plasma
|
US10886123B2
(en)
|
2017-06-02 |
2021-01-05 |
Asm Ip Holding B.V. |
Methods for forming low temperature semiconductor layers and related semiconductor device structures
|
US12040200B2
(en)
|
2017-06-20 |
2024-07-16 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
US10685834B2
(en)
|
2017-07-05 |
2020-06-16 |
Asm Ip Holdings B.V. |
Methods for forming a silicon germanium tin layer and related semiconductor device structures
|
KR20190009245A
(ko)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
|
US11018002B2
(en)
|
2017-07-19 |
2021-05-25 |
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Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
|
US10541333B2
(en)
|
2017-07-19 |
2020-01-21 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US11374112B2
(en)
|
2017-07-19 |
2022-06-28 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US10312055B2
(en)
|
2017-07-26 |
2019-06-04 |
Asm Ip Holding B.V. |
Method of depositing film by PEALD using negative bias
|
US10605530B2
(en)
|
2017-07-26 |
2020-03-31 |
Asm Ip Holding B.V. |
Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
TWI784022B
(zh)
*
|
2017-07-31 |
2022-11-21 |
中國大陸商南大光電半導體材料有限公司 |
1,1,1-參(二甲胺基)二矽烷及其製備方法
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
US11769682B2
(en)
|
2017-08-09 |
2023-09-26 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US11139191B2
(en)
|
2017-08-09 |
2021-10-05 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US10249524B2
(en)
|
2017-08-09 |
2019-04-02 |
Asm Ip Holding B.V. |
Cassette holder assembly for a substrate cassette and holding member for use in such assembly
|
US10236177B1
(en)
|
2017-08-22 |
2019-03-19 |
ASM IP Holding B.V.. |
Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
|
USD900036S1
(en)
|
2017-08-24 |
2020-10-27 |
Asm Ip Holding B.V. |
Heater electrical connector and adapter
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
KR102491945B1
(ko)
|
2017-08-30 |
2023-01-26 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
US11056344B2
(en)
|
2017-08-30 |
2021-07-06 |
Asm Ip Holding B.V. |
Layer forming method
|
KR102401446B1
(ko)
|
2017-08-31 |
2022-05-24 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US10607895B2
(en)
|
2017-09-18 |
2020-03-31 |
Asm Ip Holdings B.V. |
Method for forming a semiconductor device structure comprising a gate fill metal
|
KR102630301B1
(ko)
|
2017-09-21 |
2024-01-29 |
에이에스엠 아이피 홀딩 비.브이. |
침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
|
US10844484B2
(en)
|
2017-09-22 |
2020-11-24 |
Asm Ip Holding B.V. |
Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
US10403504B2
(en)
|
2017-10-05 |
2019-09-03 |
Asm Ip Holding B.V. |
Method for selectively depositing a metallic film on a substrate
|
US10319588B2
(en)
|
2017-10-10 |
2019-06-11 |
Asm Ip Holding B.V. |
Method for depositing a metal chalcogenide on a substrate by cyclical deposition
|
US10923344B2
(en)
|
2017-10-30 |
2021-02-16 |
Asm Ip Holding B.V. |
Methods for forming a semiconductor structure and related semiconductor structures
|
US10910262B2
(en)
|
2017-11-16 |
2021-02-02 |
Asm Ip Holding B.V. |
Method of selectively depositing a capping layer structure on a semiconductor device structure
|
KR102443047B1
(ko)
|
2017-11-16 |
2022-09-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 방법 및 그에 의해 제조된 장치
|
US10460930B2
(en)
|
2017-11-22 |
2019-10-29 |
Lam Research Corporation |
Selective growth of SiO2 on dielectric surfaces in the presence of copper
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
WO2019103613A1
(en)
|
2017-11-27 |
2019-05-31 |
Asm Ip Holding B.V. |
A storage device for storing wafer cassettes for use with a batch furnace
|
KR102633318B1
(ko)
|
2017-11-27 |
2024-02-05 |
에이에스엠 아이피 홀딩 비.브이. |
청정 소형 구역을 포함한 장치
|
US10290508B1
(en)
|
2017-12-05 |
2019-05-14 |
Asm Ip Holding B.V. |
Method for forming vertical spacers for spacer-defined patterning
|
US10872771B2
(en)
|
2018-01-16 |
2020-12-22 |
Asm Ip Holding B. V. |
Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
|
CN111630203A
(zh)
|
2018-01-19 |
2020-09-04 |
Asm Ip私人控股有限公司 |
通过等离子体辅助沉积来沉积间隙填充层的方法
|
TWI799494B
(zh)
|
2018-01-19 |
2023-04-21 |
荷蘭商Asm 智慧財產控股公司 |
沈積方法
|
USD903477S1
(en)
|
2018-01-24 |
2020-12-01 |
Asm Ip Holdings B.V. |
Metal clamp
|
US11018047B2
(en)
|
2018-01-25 |
2021-05-25 |
Asm Ip Holding B.V. |
Hybrid lift pin
|
US10535516B2
(en)
|
2018-02-01 |
2020-01-14 |
Asm Ip Holdings B.V. |
Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
|
USD880437S1
(en)
|
2018-02-01 |
2020-04-07 |
Asm Ip Holding B.V. |
Gas supply plate for semiconductor manufacturing apparatus
|
US11081345B2
(en)
|
2018-02-06 |
2021-08-03 |
Asm Ip Holding B.V. |
Method of post-deposition treatment for silicon oxide film
|
US10896820B2
(en)
|
2018-02-14 |
2021-01-19 |
Asm Ip Holding B.V. |
Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
WO2019158960A1
(en)
|
2018-02-14 |
2019-08-22 |
Asm Ip Holding B.V. |
A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
US10731249B2
(en)
|
2018-02-15 |
2020-08-04 |
Asm Ip Holding B.V. |
Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
|
US10658181B2
(en)
|
2018-02-20 |
2020-05-19 |
Asm Ip Holding B.V. |
Method of spacer-defined direct patterning in semiconductor fabrication
|
KR102636427B1
(ko)
|
2018-02-20 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 장치
|
US10975470B2
(en)
|
2018-02-23 |
2021-04-13 |
Asm Ip Holding B.V. |
Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
|
US11473195B2
(en)
|
2018-03-01 |
2022-10-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and a method for processing a substrate
|
US11404275B2
(en)
|
2018-03-02 |
2022-08-02 |
Lam Research Corporation |
Selective deposition using hydrolysis
|
US11629406B2
(en)
|
2018-03-09 |
2023-04-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
|
US11114283B2
(en)
|
2018-03-16 |
2021-09-07 |
Asm Ip Holding B.V. |
Reactor, system including the reactor, and methods of manufacturing and using same
|
KR102646467B1
(ko)
|
2018-03-27 |
2024-03-11 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
|
US11088002B2
(en)
|
2018-03-29 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate rack and a substrate processing system and method
|
US11230766B2
(en)
|
2018-03-29 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
US10510536B2
(en)
|
2018-03-29 |
2019-12-17 |
Asm Ip Holding B.V. |
Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
|
KR102501472B1
(ko)
|
2018-03-30 |
2023-02-20 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
SG10201903201XA
(en)
|
2018-04-11 |
2019-11-28 |
Versum Materials Us Llc |
Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films
|
US10580645B2
(en)
|
2018-04-30 |
2020-03-03 |
Asm Ip Holding B.V. |
Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
|
KR20190128558A
(ko)
|
2018-05-08 |
2019-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
|
US12025484B2
(en)
|
2018-05-08 |
2024-07-02 |
Asm Ip Holding B.V. |
Thin film forming method
|
TW202349473A
(zh)
|
2018-05-11 |
2023-12-16 |
荷蘭商Asm Ip私人控股有限公司 |
用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
|
KR102596988B1
(ko)
|
2018-05-28 |
2023-10-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 그에 의해 제조된 장치
|
US11270899B2
(en)
|
2018-06-04 |
2022-03-08 |
Asm Ip Holding B.V. |
Wafer handling chamber with moisture reduction
|
US11718913B2
(en)
|
2018-06-04 |
2023-08-08 |
Asm Ip Holding B.V. |
Gas distribution system and reactor system including same
|
CN110581050B
(zh)
*
|
2018-06-07 |
2024-06-11 |
东京毅力科创株式会社 |
处理方法和等离子体处理装置
|
US11286562B2
(en)
|
2018-06-08 |
2022-03-29 |
Asm Ip Holding B.V. |
Gas-phase chemical reactor and method of using same
|
KR102568797B1
(ko)
|
2018-06-21 |
2023-08-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 시스템
|
US10797133B2
(en)
|
2018-06-21 |
2020-10-06 |
Asm Ip Holding B.V. |
Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
|
TW202409324A
(zh)
|
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2024-03-01 |
荷蘭商Asm Ip私人控股有限公司 |
用於形成含金屬材料之循環沉積製程
|
TW202405221A
(zh)
|
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2024-02-01 |
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|
US10612136B2
(en)
|
2018-06-29 |
2020-04-07 |
ASM IP Holding, B.V. |
Temperature-controlled flange and reactor system including same
|
TWI751420B
(zh)
|
2018-06-29 |
2022-01-01 |
荷蘭商Asm知識產權私人控股有限公司 |
薄膜沉積方法
|
US10388513B1
(en)
|
2018-07-03 |
2019-08-20 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10755922B2
(en)
|
2018-07-03 |
2020-08-25 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10767789B2
(en)
|
2018-07-16 |
2020-09-08 |
Asm Ip Holding B.V. |
Diaphragm valves, valve components, and methods for forming valve components
|
US10483099B1
(en)
|
2018-07-26 |
2019-11-19 |
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|
US11053591B2
(en)
|
2018-08-06 |
2021-07-06 |
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|
US10883175B2
(en)
|
2018-08-09 |
2021-01-05 |
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Vertical furnace for processing substrates and a liner for use therein
|
US10829852B2
(en)
|
2018-08-16 |
2020-11-10 |
Asm Ip Holding B.V. |
Gas distribution device for a wafer processing apparatus
|
US11430674B2
(en)
|
2018-08-22 |
2022-08-30 |
Asm Ip Holding B.V. |
Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
KR20200030162A
(ko)
|
2018-09-11 |
2020-03-20 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11024523B2
(en)
|
2018-09-11 |
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|
US11049751B2
(en)
|
2018-09-14 |
2021-06-29 |
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|
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(zh)
|
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|
US11232963B2
(en)
|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US10847365B2
(en)
|
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|
US10811256B2
(en)
|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
USD948463S1
(en)
|
2018-10-24 |
2022-04-12 |
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Susceptor for semiconductor substrate supporting apparatus
|
US10381219B1
(en)
|
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Asm Ip Holding B.V. |
Methods for forming a silicon nitride film
|
US11087997B2
(en)
|
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|
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(ko)
|
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2020-05-13 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11572620B2
(en)
|
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|
US11031242B2
(en)
|
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|
US10818758B2
(en)
|
2018-11-16 |
2020-10-27 |
Asm Ip Holding B.V. |
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
|
US10847366B2
(en)
|
2018-11-16 |
2020-11-24 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
|
US10559458B1
(en)
|
2018-11-26 |
2020-02-11 |
Asm Ip Holding B.V. |
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|
US12040199B2
(en)
|
2018-11-28 |
2024-07-16 |
Asm Ip Holding B.V. |
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|
US11217444B2
(en)
|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US11158513B2
(en)
|
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Asm Ip Holding B.V. |
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
|
JP7504584B2
(ja)
|
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2024-06-24 |
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|
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(zh)
|
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荷蘭商Asm 智慧財產控股公司 |
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|
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(ko)
|
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2020-07-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
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(zh)
|
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Asm Ip私人控股有限公司 |
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|
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(ja)
|
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炭素ドープされた酸化ケイ素の堆積
|
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(ja)
|
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2020-08-31 |
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|
US11482533B2
(en)
|
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2022-10-25 |
Asm Ip Holding B.V. |
Apparatus and methods for plug fill deposition in 3-D NAND applications
|
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(ja)
|
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ja)
|
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2020-08-31 |
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基材を処理するための基材処理装置および方法
|
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(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 층을 포함한 구조체 및 이의 형성 방법
|
KR20200108248A
(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
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|
KR20200108242A
(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
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|
KR20200116033A
(ko)
|
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2020-10-08 |
에이에스엠 아이피 홀딩 비.브이. |
도어 개방기 및 이를 구비한 기판 처리 장치
|
KR20200116855A
(ko)
|
2019-04-01 |
2020-10-13 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자를 제조하는 방법
|
US20210017198A1
(en)
|
2019-04-05 |
2021-01-21 |
Versum Materials Us, Llc |
Organoamino-Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films
|
KR20200123380A
(ko)
|
2019-04-19 |
2020-10-29 |
에이에스엠 아이피 홀딩 비.브이. |
층 형성 방법 및 장치
|
KR20200125453A
(ko)
|
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2020-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
기상 반응기 시스템 및 이를 사용하는 방법
|
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(ko)
|
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2020-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
비정질 탄소 중합체 막을 개질하는 방법
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ja)
|
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2020-11-19 |
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|
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(ja)
|
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ウェハボートハンドリング装置、縦型バッチ炉および方法
|
USD975665S1
(en)
|
2019-05-17 |
2023-01-17 |
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Susceptor shaft
|
USD947913S1
(en)
|
2019-05-17 |
2022-04-05 |
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|
USD935572S1
(en)
|
2019-05-24 |
2021-11-09 |
Asm Ip Holding B.V. |
Gas channel plate
|
USD922229S1
(en)
|
2019-06-05 |
2021-06-15 |
Asm Ip Holding B.V. |
Device for controlling a temperature of a gas supply unit
|
KR20200141002A
(ko)
|
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2020-12-17 |
에이에스엠 아이피 홀딩 비.브이. |
배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
|
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(ko)
|
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2020-12-23 |
에이에스엠 아이피 홀딩 비.브이. |
개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
|
USD944946S1
(en)
|
2019-06-14 |
2022-03-01 |
Asm Ip Holding B.V. |
Shower plate
|
US11649560B2
(en)
|
2019-06-20 |
2023-05-16 |
Applied Materials, Inc. |
Method for forming silicon-phosphorous materials
|
USD931978S1
(en)
|
2019-06-27 |
2021-09-28 |
Asm Ip Holding B.V. |
Showerhead vacuum transport
|
KR20210005515A
(ko)
|
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2021-01-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
|
JP7499079B2
(ja)
|
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2024-06-13 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
同軸導波管を用いたプラズマ装置、基板処理方法
|
CN112216646A
(zh)
|
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2021-01-12 |
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基板支撑组件及包括其的基板处理装置
|
KR20210010307A
(ko)
|
2019-07-16 |
2021-01-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
KR20210010816A
(ko)
|
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2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
라디칼 보조 점화 플라즈마 시스템 및 방법
|
KR20210010820A
(ko)
|
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2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 게르마늄 구조를 형성하는 방법
|
US11643724B2
(en)
|
2019-07-18 |
2023-05-09 |
Asm Ip Holding B.V. |
Method of forming structures using a neutral beam
|
TWI839544B
(zh)
|
2019-07-19 |
2024-04-21 |
荷蘭商Asm Ip私人控股有限公司 |
形成形貌受控的非晶碳聚合物膜之方法
|
TW202113936A
(zh)
|
2019-07-29 |
2021-04-01 |
荷蘭商Asm Ip私人控股有限公司 |
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|
CN112309900A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112309899A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
US11227782B2
(en)
|
2019-07-31 |
2022-01-18 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11587815B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11587814B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
CN112323048B
(zh)
|
2019-08-05 |
2024-02-09 |
Asm Ip私人控股有限公司 |
用于化学源容器的液位传感器
|
USD965524S1
(en)
|
2019-08-19 |
2022-10-04 |
Asm Ip Holding B.V. |
Susceptor support
|
USD965044S1
(en)
|
2019-08-19 |
2022-09-27 |
Asm Ip Holding B.V. |
Susceptor shaft
|
JP2021031769A
(ja)
|
2019-08-21 |
2021-03-01 |
エーエスエム アイピー ホールディング ビー.ブイ. |
成膜原料混合ガス生成装置及び成膜装置
|
KR20210024423A
(ko)
|
2019-08-22 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
홀을 구비한 구조체를 형성하기 위한 방법
|
USD949319S1
(en)
|
2019-08-22 |
2022-04-19 |
Asm Ip Holding B.V. |
Exhaust duct
|
USD979506S1
(en)
|
2019-08-22 |
2023-02-28 |
Asm Ip Holding B.V. |
Insulator
|
USD930782S1
(en)
|
2019-08-22 |
2021-09-14 |
Asm Ip Holding B.V. |
Gas distributor
|
USD940837S1
(en)
|
2019-08-22 |
2022-01-11 |
Asm Ip Holding B.V. |
Electrode
|
US11286558B2
(en)
|
2019-08-23 |
2022-03-29 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
|
KR20210024420A
(ko)
|
2019-08-23 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
|
KR20210029090A
(ko)
|
2019-09-04 |
2021-03-15 |
에이에스엠 아이피 홀딩 비.브이. |
희생 캡핑 층을 이용한 선택적 증착 방법
|
KR20210029663A
(ko)
|
2019-09-05 |
2021-03-16 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11562901B2
(en)
|
2019-09-25 |
2023-01-24 |
Asm Ip Holding B.V. |
Substrate processing method
|
CN112593212B
(zh)
|
2019-10-02 |
2023-12-22 |
Asm Ip私人控股有限公司 |
通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
|
KR20210042810A
(ko)
|
2019-10-08 |
2021-04-20 |
에이에스엠 아이피 홀딩 비.브이. |
활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
|
CN112635282A
(zh)
|
2019-10-08 |
2021-04-09 |
Asm Ip私人控股有限公司 |
具有连接板的基板处理装置、基板处理方法
|
KR20210043460A
(ko)
|
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2021-04-21 |
에이에스엠 아이피 홀딩 비.브이. |
포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
|
US12009241B2
(en)
|
2019-10-14 |
2024-06-11 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly with detector to detect cassette
|
TWI834919B
(zh)
|
2019-10-16 |
2024-03-11 |
荷蘭商Asm Ip私人控股有限公司 |
氧化矽之拓撲選擇性膜形成之方法
|
US11637014B2
(en)
|
2019-10-17 |
2023-04-25 |
Asm Ip Holding B.V. |
Methods for selective deposition of doped semiconductor material
|
KR20210047808A
(ko)
|
2019-10-21 |
2021-04-30 |
에이에스엠 아이피 홀딩 비.브이. |
막을 선택적으로 에칭하기 위한 장치 및 방법
|
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(ko)
|
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2021-05-07 |
에이에스엠 아이피 홀딩 비.브이. |
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|
US11646205B2
(en)
|
2019-10-29 |
2023-05-09 |
Asm Ip Holding B.V. |
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
|
KR20210054983A
(ko)
|
2019-11-05 |
2021-05-14 |
에이에스엠 아이피 홀딩 비.브이. |
도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
|
CN110670045A
(zh)
*
|
2019-11-12 |
2020-01-10 |
复旦大学 |
一种原子层沉积制备有机无机杂化卤素钙钛矿材料的方法
|
US11501968B2
(en)
|
2019-11-15 |
2022-11-15 |
Asm Ip Holding B.V. |
Method for providing a semiconductor device with silicon filled gaps
|
KR20210062561A
(ko)
|
2019-11-20 |
2021-05-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
|
US11450529B2
(en)
|
2019-11-26 |
2022-09-20 |
Asm Ip Holding B.V. |
Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
|
CN112951697A
(zh)
|
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|
CN112885693A
(zh)
|
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2021-06-01 |
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|
CN112885692A
(zh)
|
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2021-06-01 |
Asm Ip私人控股有限公司 |
基板处理设备
|
JP2021090042A
(ja)
|
2019-12-02 |
2021-06-10 |
エーエスエム アイピー ホールディング ビー.ブイ. |
基板処理装置、基板処理方法
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
US11527403B2
(en)
|
2019-12-19 |
2022-12-13 |
Asm Ip Holding B.V. |
Methods for filling a gap feature on a substrate surface and related semiconductor structures
|
KR20210089079A
(ko)
|
2020-01-06 |
2021-07-15 |
에이에스엠 아이피 홀딩 비.브이. |
채널형 리프트 핀
|
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(zh)
|
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氣體供應總成以及閥板總成
|
US11993847B2
(en)
|
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Asm Ip Holding B.V. |
Injector
|
KR102675856B1
(ko)
|
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박막 형성 방법 및 박막 표면 개질 방법
|
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(zh)
|
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|
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(ko)
|
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대형 물품의 투과율 측정을 위한 방법 및 장치
|
CN115053016A
(zh)
*
|
2020-02-07 |
2022-09-13 |
朗姆研究公司 |
用于含硅膜高温沉积的前体
|
US11776846B2
(en)
|
2020-02-07 |
2023-10-03 |
Asm Ip Holding B.V. |
Methods for depositing gap filling fluids and related systems and devices
|
US11781243B2
(en)
|
2020-02-17 |
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Asm Ip Holding B.V. |
Method for depositing low temperature phosphorous-doped silicon
|
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(zh)
|
2020-02-28 |
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專用於零件清潔的系統
|
US11876356B2
(en)
|
2020-03-11 |
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Asm Ip Holding B.V. |
Lockout tagout assembly and system and method of using same
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
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|
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(zh)
|
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|
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(ko)
|
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실리콘 함유 필름의 증착을 위한 유기아미노-작용기화된 사이클릭 올리고실록산
|
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(ko)
|
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에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법
|
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(zh)
|
2020-04-03 |
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阻障層形成方法及半導體裝置的製造方法
|
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(zh)
|
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用於選擇性蝕刻氧化矽膜之設備及方法
|
US11821078B2
(en)
|
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2023-11-21 |
Asm Ip Holding B.V. |
Method for forming precoat film and method for forming silicon-containing film
|
US11996289B2
(en)
|
2020-04-16 |
2024-05-28 |
Asm Ip Holding B.V. |
Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
|
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(ko)
|
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2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
|
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(ko)
|
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2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
|
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(zh)
|
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形成含氮化钒的层的方法及包含其的结构
|
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(ko)
|
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2021-11-09 |
에이에스엠 아이피 홀딩 비.브이. |
고체 소스 전구체 용기
|
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(ko)
|
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2021-11-11 |
에이에스엠 아이피 홀딩 비.브이. |
Foup 핸들러를 이용한 foup의 빠른 교환
|
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(ko)
|
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2021-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
반응기 시스템용 레이저 정렬 고정구
|
KR20210143653A
(ko)
|
2020-05-19 |
2021-11-29 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
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(ko)
|
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2021-12-01 |
에이에스엠 아이피 홀딩 비.브이. |
다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
|
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(ko)
|
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|
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(zh)
|
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荷蘭商Asm Ip私人控股有限公司 |
基板處理方法
|
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(zh)
|
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形成含矽層之方法
|
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(zh)
|
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2022-05-01 |
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基板處理方法
|
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(zh)
|
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|
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(ko)
|
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2022-01-25 |
에이에스엠 아이피 홀딩 비.브이. |
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|
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(zh)
|
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2022-02-01 |
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用於沉積鉬層之方法及系統
|
US12040177B2
(en)
|
2020-08-18 |
2024-07-16 |
Asm Ip Holding B.V. |
Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
|
KR20220027026A
(ko)
|
2020-08-26 |
2022-03-07 |
에이에스엠 아이피 홀딩 비.브이. |
금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
|
USD990534S1
(en)
|
2020-09-11 |
2023-06-27 |
Asm Ip Holding B.V. |
Weighted lift pin
|
USD1012873S1
(en)
|
2020-09-24 |
2024-01-30 |
Asm Ip Holding B.V. |
Electrode for semiconductor processing apparatus
|
US12009224B2
(en)
|
2020-09-29 |
2024-06-11 |
Asm Ip Holding B.V. |
Apparatus and method for etching metal nitrides
|
FR3114588B1
(fr)
*
|
2020-09-29 |
2023-08-11 |
Safran Ceram |
Procédé de fabrication d’une barrière environnementale
|
CN112210769B
(zh)
*
|
2020-09-29 |
2023-04-25 |
合肥安德科铭半导体科技有限公司 |
一种低温高生长速率氧化硅薄膜的原子层沉积方法
|
CN112110948B
(zh)
*
|
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2023-07-14 |
合肥安德科铭半导体科技有限公司 |
一种液态双氨基取代的乙硅烷制备方法及其产物的应用
|
TW202229613A
(zh)
|
2020-10-14 |
2022-08-01 |
荷蘭商Asm Ip私人控股有限公司 |
於階梯式結構上沉積材料的方法
|
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(ko)
|
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2022-04-29 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
|
TW202223136A
(zh)
|
2020-10-28 |
2022-06-16 |
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用於在基板上形成層之方法、及半導體處理系統
|
US11447865B2
(en)
|
2020-11-17 |
2022-09-20 |
Applied Materials, Inc. |
Deposition of low-κ films
|
TW202235649A
(zh)
|
2020-11-24 |
2022-09-16 |
荷蘭商Asm Ip私人控股有限公司 |
填充間隙之方法與相關之系統及裝置
|
KR20220076343A
(ko)
|
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2022-06-08 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
|
KR20220081905A
(ko)
|
2020-12-09 |
2022-06-16 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 질화물 증착용 실리콘 전구체
|
CN114639631A
(zh)
|
2020-12-16 |
2022-06-17 |
Asm Ip私人控股有限公司 |
跳动和摆动测量固定装置
|
TW202231903A
(zh)
|
2020-12-22 |
2022-08-16 |
荷蘭商Asm Ip私人控股有限公司 |
過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
|
USD1023959S1
(en)
|
2021-05-11 |
2024-04-23 |
Asm Ip Holding B.V. |
Electrode for substrate processing apparatus
|
USD980813S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas flow control plate for substrate processing apparatus
|
USD981973S1
(en)
|
2021-05-11 |
2023-03-28 |
Asm Ip Holding B.V. |
Reactor wall for substrate processing apparatus
|
USD980814S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas distributor for substrate processing apparatus
|
USD990441S1
(en)
|
2021-09-07 |
2023-06-27 |
Asm Ip Holding B.V. |
Gas flow control plate
|
KR20230087074A
(ko)
*
|
2021-12-09 |
2023-06-16 |
에스케이트리켐 주식회사 |
저 유전율 실리콘 함유 박막 형성용 전구체, 이를 이용한 저 유전율 실리콘 함유 박막 형성 방법 및 상기 저 유전율 실리콘 함유 박막을 포함하는 반도체 소자.
|
WO2024086199A1
(en)
*
|
2022-10-19 |
2024-04-25 |
Entegris, Inc. |
Silane precursors and related methods
|