JP2015146453A - 垂直集積システム - Google Patents
垂直集積システム Download PDFInfo
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- JP2015146453A JP2015146453A JP2015079984A JP2015079984A JP2015146453A JP 2015146453 A JP2015146453 A JP 2015146453A JP 2015079984 A JP2015079984 A JP 2015079984A JP 2015079984 A JP2015079984 A JP 2015079984A JP 2015146453 A JP2015146453 A JP 2015146453A
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Abstract
Description
110 半導体ダイ
120 アクティブ面
130 裏面
140 パッシブ部品
150 TSV
160 端子
Claims (21)
- 集積回路システムであって、
半導体ダイの前面上に製造されたアクティブ層と、
前記半導体ダイの裏面上のエネルギーハーベスティング層であって、非電気エネルギーを電荷に変換するように構成されたエネルギーハーベスティング層と、
前記集積回路システムの部品に電力を供給するように前記電荷を分配するように構成された少なくとも一つの電気経路とを備えた集積回路システム。 - 前記電荷を貯蔵するように構成された貯蔵層を更に備え、
前記少なくとも一つの電気経路が、前記集積回路システムの他の領域に前記電荷を分配するように前記貯蔵層に結合されている、請求項1に記載の集積回路システム。 - 前記半導体ダイの裏面上に配置された個別パッシブ部品を更に備えた請求項1に記載の集積回路システム。
- 前記エネルギーハーベスティング層が、熱から前記電荷を発生させるように構成された熱電層である、請求項1に記載の集積回路システム。
- 前記熱電層が、熱源に結合されたホットサイドと、冷却層に結合されたコールドサイドとを含む、請求項4に記載の集積回路システム。
- 前記冷却層が、冷却剤を流すための導管を含む、請求項5に記載の集積回路システム。
- 前記エネルギーハーベスティング層が、光から前記電荷を発生させるように構成された光起電層である、請求項1に記載の集積回路システム。
- 前記半導体ダイの反対側において前記光起電層に配置された耐光層を更に備え、
前記耐光層が、光を前記光起電層に到達させるための開口を有する、請求項7に記載の集積回路システム。 - 前記エネルギーハーベスティング層が熱電層及び光起電層を含む、請求項1に記載の集積回路システム。
- 半導体ダイの裏面上に配置された第一の層において非電気エネルギーを電荷に変換するステップと、
前記半導体ダイの前面上に製造されたアクティブ部品に前記電荷を分配させて、前記アクティブ部品に電力を供給するステップとを備えた方法。 - 前記半導体ダイの裏面上に配置された第二の層に前記電荷を貯蔵するステップを更に備えた請求項10に記載の方法。
- 前記非電気エネルギーが熱であり、前記第一の層が熱電層である、請求項10に記載の方法。
- 前記熱電層が、熱源に結合されたホットサイドと、冷却層に結合されたコールドサイドとを含む、請求項12に記載の方法。
- 前記冷却層に冷却剤を通すステップを更に備えた請求項13に記載の方法。
- 前記非電気エネルギーが光であり、前記第一の層が光起電層である、請求項10に記載の方法。
- 前記光起電層の上方の特定の領域において前記光起電層に向かう光を遮るステップを更に備えた請求項15に記載の方法。
- 回路板と、
前記回路板上の垂直集積回路とを備えたデバイスであって、
前記垂直集積回路が、
半導体ダイの前面上に製造されたアクティブ層と、
前記半導体ダイの裏面上のエネルギーハーベスティング層であって、非電気環境条件からのエネルギーを電荷に変換するように構成されたエネルギーハーベスティング層と、
前記電荷を前記垂直集積回路に分配するように構成された少なくとも一つの電気経路とを備える、デバイス。 - プロセッサを更に備えた請求項17に記載のデバイス。
- 前記電荷を貯蔵して前記電荷を前記垂直集積回路に分配するように前記垂直集積回路内に構成された貯蔵層を更に備えた請求項17に記載のデバイス。
- 前記エネルギーハーベスティング層が熱電層及び/又は光起電層を含む、請求項17に記載のデバイス。
- 前記電荷のレベルを示す信号を伝送するように構成された信号伝送層を更に備えた請求項17に記載のデバイス。
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US8315068B2 (en) | 2009-11-12 | 2012-11-20 | International Business Machines Corporation | Integrated circuit die stacks having initially identical dies personalized with fuses and methods of manufacturing the same |
US9156673B2 (en) | 2010-09-18 | 2015-10-13 | Fairchild Semiconductor Corporation | Packaging to reduce stress on microelectromechanical systems |
KR101352827B1 (ko) | 2010-09-18 | 2014-01-17 | 페어차일드 세미컨덕터 코포레이션 | 단일 프루프 매스를 가진 미세기계화 3축 가속도계 |
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US8649179B2 (en) * | 2011-02-05 | 2014-02-11 | Laird Technologies, Inc. | Circuit assemblies including thermoelectric modules |
CN104115226B (zh) * | 2011-12-23 | 2018-02-06 | 英特尔公司 | 堆叠存储器体系结构中的单独微通道电压域 |
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