JP6371725B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP6371725B2 JP6371725B2 JP2015050852A JP2015050852A JP6371725B2 JP 6371725 B2 JP6371725 B2 JP 6371725B2 JP 2015050852 A JP2015050852 A JP 2015050852A JP 2015050852 A JP2015050852 A JP 2015050852A JP 6371725 B2 JP6371725 B2 JP 6371725B2
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- 239000004065 semiconductor Substances 0.000 title claims description 121
- 229920005989 resin Polymers 0.000 claims description 37
- 239000011347 resin Substances 0.000 claims description 37
- 239000012212 insulator Substances 0.000 claims description 32
- 230000005855 radiation Effects 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
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- 239000000853 adhesive Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000013021 overheating Methods 0.000 description 3
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- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 2
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
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- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 1
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/732—Location after the connecting process
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- H01L2224/85909—Post-treatment of the connector or wire bonding area
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- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
本実施形態に係る半導体モジュールについて図1乃至図3を用いて説明する。図1は本実施形態の半導体モジュールを示す断面図である。図2は半導体モジュールの回路構成の概要を示すブロック図である。図3は外囲器に収納された半導体モジュールを示す図で、図3(a)はその平面図、図3(b)はA−A線に沿って切断し矢印方向に眺めた断面図である。
本実施形態に係る半導体モジュールについて図10を用いて説明する。図10は本実施形態の半導体モジュールに用いられる発光素子を示す断面図である。
(付記1) 前記第1および第2絶縁体は、サファイア、石英ガラス、透光性セラミックスのいずれかである請求項2に記載の半導体モジュール。
11、21 第1、第2半導体素子
11a、21a 第1、第2受光回路
11b、21b 第1、第2出力回路
11c、21c フォトダイオード
12、22 第1、第2放射光
13、23 第1、第2発光素子
14、24 第1、第2絶縁体
15a、15b、25a、25b 接合樹脂
16、26 導電性接着剤
17a、27a ダイパッド
17b、27b リード
18a、18b、28a、28b ワイヤ
19、29 内部樹脂
30 外囲器
31 外部樹脂
41、42、46、49 増幅器
43 プリドライバ
44、51 保護回路
45、50 論理回路
47 定電圧回路
48、52 クロック発振回路
61 制御用マイクロコンピュータ
62 ドライバ
63 IGBT
64 コイル
65 ダイオード
66 抵抗
71 pクラッド層
72 活性層
73 nクラッド層
74、82 nコンタクト層
75 p接着層
76 p支持基板
76a、76b、81a、81b 第1、第2の面
76c、81c 凹凸
77 n側電極
78 p側電極
79 基板
81 絶縁性支持基板
83 pコンタクト層
84 接着層
L1 外部沿面距離
L2 空間距離
L3 内部沿面距離
Claims (6)
- 第1受光回路と第1出力回路とが設けられた第1半導体素子と、
第2受光回路と第2出力回路とが設けられた第2半導体素子と、
前記第2出力回路に電気的に接続された第1発光素子であって、前記第1発光素子が放射する第1放射光が前記第1受光回路に受光されるように前記第1半導体素子に載置された第1発光素子と、
前記第1出力回路に電気的に接続された第2発光素子であって、前記第2発光素子が放射する第2放射光が前記第2受光回路に受光されるように前記第2半導体素子に載置された第2発光素子と、
を具備することを特徴とする半導体モジュール。 - 前記第1発光素子は、前記第1放射光に対して透光性を有する第1絶縁体を介して前記第1半導体素子に積層され、
前記第2発光素子は、前記第2放射光に対して透光性を有する第2絶縁体を介して前記第2半導体素子に積層され、
前記第1絶縁体および前記第2絶縁体は、サファイア、石英ガラス、セラミックスの少なくとも1つを含むことを特徴とする請求項1に記載の半導体モジュール。 - 前記第1放射光に対して透光性を有し、前記第1発光素子と前記第1絶縁体との間および前記第1絶縁体と前記第1半導体素子との間に設けられた第1接合樹脂と、
前記第2放射光に対して透光性を有し、前記第2発光素子と前記第2絶縁体との間および前記第2絶縁体と前記第2半導体素子との間に設けられた第2接合樹脂と、
を有することを特徴とする請求項2に記載の半導体モジュール。 - 前記第1および第2発光素子それぞれを覆う内部樹脂と、
前記内部樹脂より高い弾性率を有し、前記第1および第2半導体素子と、前記第1および第2発光素子とを一体に覆う外部樹脂と、
を具備することを特徴とする請求項1に記載の半導体モジュール。 - 前記第1半導体素子の動作電圧と前記第2半導体素子の動作電圧が異なることを特徴とする請求項1に記載の半導体モジュール。
- 前記第1半導体素子と前記第1発光素子との間の介在物に沿った内部沿面距離が1mm以上である請求項3に記載の半導体モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2015050852A JP6371725B2 (ja) | 2015-03-13 | 2015-03-13 | 半導体モジュール |
US15/061,397 US9633984B2 (en) | 2015-03-13 | 2016-03-04 | Semiconductor module |
US15/460,568 US10204891B2 (en) | 2015-03-13 | 2017-03-16 | Semiconductor module |
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Application Number | Priority Date | Filing Date | Title |
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JP2015050852A JP6371725B2 (ja) | 2015-03-13 | 2015-03-13 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
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JP2016171235A JP2016171235A (ja) | 2016-09-23 |
JP6371725B2 true JP6371725B2 (ja) | 2018-08-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015050852A Expired - Fee Related JP6371725B2 (ja) | 2015-03-13 | 2015-03-13 | 半導体モジュール |
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US (2) | US9633984B2 (ja) |
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JP6371725B2 (ja) * | 2015-03-13 | 2018-08-08 | 株式会社東芝 | 半導体モジュール |
JP2017147364A (ja) * | 2016-02-18 | 2017-08-24 | 株式会社東芝 | 半導体モジュール |
JP6698569B2 (ja) * | 2017-03-10 | 2020-05-27 | 三菱電機株式会社 | 半導体モジュールおよび電力変換装置 |
JP7413217B2 (ja) * | 2020-09-17 | 2024-01-15 | 株式会社東芝 | 半導体装置 |
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US20160268240A1 (en) | 2016-09-15 |
US9633984B2 (en) | 2017-04-25 |
JP2016171235A (ja) | 2016-09-23 |
US10204891B2 (en) | 2019-02-12 |
US20170186738A1 (en) | 2017-06-29 |
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