JPS5257789A - Photo coupled semiconductor device - Google Patents
Photo coupled semiconductor deviceInfo
- Publication number
- JPS5257789A JPS5257789A JP13292475A JP13292475A JPS5257789A JP S5257789 A JPS5257789 A JP S5257789A JP 13292475 A JP13292475 A JP 13292475A JP 13292475 A JP13292475 A JP 13292475A JP S5257789 A JPS5257789 A JP S5257789A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- elements
- coupled semiconductor
- light emitting
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Abstract
PURPOSE: To increase the scale of integration and facilitate packaging by forming an IC for controlling light emitting elements and a main IC containing light receiving elements by electrically insulating these within the same chip and electrically connecting the controlling integrated circuit elements to the light emitting elements through photo coupling of the light receiving elements by the use of insulation isolating techniques used in the element isolation of bipolar ICs.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13292475A JPS5257789A (en) | 1975-11-07 | 1975-11-07 | Photo coupled semiconductor device |
CA263,453A CA1061884A (en) | 1975-11-07 | 1976-10-15 | Optoelectronic device having improved integration density and photocoupling efficiency |
NL7612271A NL171758C (en) | 1975-11-07 | 1976-11-04 | OPTO-ELECTRICAL COUPLING DEVICE. |
DE2650770A DE2650770C3 (en) | 1975-11-07 | 1976-11-05 | Opto-electronic coupling device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13292475A JPS5257789A (en) | 1975-11-07 | 1975-11-07 | Photo coupled semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5257789A true JPS5257789A (en) | 1977-05-12 |
JPS557709B2 JPS557709B2 (en) | 1980-02-27 |
Family
ID=15092682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13292475A Granted JPS5257789A (en) | 1975-11-07 | 1975-11-07 | Photo coupled semiconductor device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5257789A (en) |
CA (1) | CA1061884A (en) |
DE (1) | DE2650770C3 (en) |
NL (1) | NL171758C (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008093880A1 (en) * | 2007-02-02 | 2008-08-07 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2008123020A1 (en) * | 2007-03-09 | 2008-10-16 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2016171235A (en) * | 2015-03-13 | 2016-09-23 | 株式会社東芝 | Semiconductor module |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3128187A1 (en) * | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | OPTO-ELECTRONIC COMPONENT |
-
1975
- 1975-11-07 JP JP13292475A patent/JPS5257789A/en active Granted
-
1976
- 1976-10-15 CA CA263,453A patent/CA1061884A/en not_active Expired
- 1976-11-04 NL NL7612271A patent/NL171758C/en not_active IP Right Cessation
- 1976-11-05 DE DE2650770A patent/DE2650770C3/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008093880A1 (en) * | 2007-02-02 | 2008-08-07 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8188497B2 (en) | 2007-02-02 | 2012-05-29 | Sanyo Semiconductor Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5295783B2 (en) * | 2007-02-02 | 2013-09-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | Semiconductor device |
WO2008123020A1 (en) * | 2007-03-09 | 2008-10-16 | Sanyo Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7855425B2 (en) | 2007-03-09 | 2010-12-21 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2016171235A (en) * | 2015-03-13 | 2016-09-23 | 株式会社東芝 | Semiconductor module |
US10204891B2 (en) | 2015-03-13 | 2019-02-12 | Kabushiki Kaisha Toshiba | Semiconductor module |
Also Published As
Publication number | Publication date |
---|---|
DE2650770C3 (en) | 1981-02-26 |
CA1061884A (en) | 1979-09-04 |
NL171758B (en) | 1982-12-01 |
NL171758C (en) | 1983-05-02 |
JPS557709B2 (en) | 1980-02-27 |
NL7612271A (en) | 1977-05-10 |
DE2650770B2 (en) | 1980-06-12 |
DE2650770A1 (en) | 1977-05-18 |
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