NL171758C - OPTO-ELECTRICAL COUPLING DEVICE. - Google Patents

OPTO-ELECTRICAL COUPLING DEVICE.

Info

Publication number
NL171758C
NL171758C NL7612271A NL7612271A NL171758C NL 171758 C NL171758 C NL 171758C NL 7612271 A NL7612271 A NL 7612271A NL 7612271 A NL7612271 A NL 7612271A NL 171758 C NL171758 C NL 171758C
Authority
NL
Netherlands
Prior art keywords
opto
coupling device
electrical coupling
electrical
coupling
Prior art date
Application number
NL7612271A
Other languages
Dutch (nl)
Other versions
NL7612271A (en
NL171758B (en
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7612271A publication Critical patent/NL7612271A/en
Publication of NL171758B publication Critical patent/NL171758B/en
Application granted granted Critical
Publication of NL171758C publication Critical patent/NL171758C/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13Modifications for switching at zero crossing
    • H03K17/136Modifications for switching at zero crossing in thyristor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
NL7612271A 1975-11-07 1976-11-04 OPTO-ELECTRICAL COUPLING DEVICE. NL171758C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13292475A JPS5257789A (en) 1975-11-07 1975-11-07 Photo coupled semiconductor device

Publications (3)

Publication Number Publication Date
NL7612271A NL7612271A (en) 1977-05-10
NL171758B NL171758B (en) 1982-12-01
NL171758C true NL171758C (en) 1983-05-02

Family

ID=15092682

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7612271A NL171758C (en) 1975-11-07 1976-11-04 OPTO-ELECTRICAL COUPLING DEVICE.

Country Status (4)

Country Link
JP (1) JPS5257789A (en)
CA (1) CA1061884A (en)
DE (1) DE2650770C3 (en)
NL (1) NL171758C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (en) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg OPTO-ELECTRONIC COMPONENT
WO2008093880A1 (en) * 2007-02-02 2008-08-07 Sanyo Electric Co., Ltd. Semiconductor device and method for manufacturing the same
US7855425B2 (en) 2007-03-09 2010-12-21 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP6371725B2 (en) * 2015-03-13 2018-08-08 株式会社東芝 Semiconductor module

Also Published As

Publication number Publication date
JPS5257789A (en) 1977-05-12
NL7612271A (en) 1977-05-10
NL171758B (en) 1982-12-01
DE2650770B2 (en) 1980-06-12
CA1061884A (en) 1979-09-04
DE2650770C3 (en) 1981-02-26
JPS557709B2 (en) 1980-02-27
DE2650770A1 (en) 1977-05-18

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee