JP5865859B2 - 光結合装置 - Google Patents
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- JP5865859B2 JP5865859B2 JP2013061150A JP2013061150A JP5865859B2 JP 5865859 B2 JP5865859 B2 JP 5865859B2 JP 2013061150 A JP2013061150 A JP 2013061150A JP 2013061150 A JP2013061150 A JP 2013061150A JP 5865859 B2 JP5865859 B2 JP 5865859B2
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/165—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the semiconductor sensitive to radiation being characterised by at least one potential-jump or surface barrier
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- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/4917—Crossed wires
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
図1(a)は第1の実施形態にかかる光結合装置の模式平面図、図1(b)はA−A線に沿った模式断面図、である。
光結合装置は、発光素子10と、受光素子20と、接着層34と、入力端子30と、出力端子40と、樹脂成型体70と、を有する。
図2(a)に表すように、透光性を有する支持基板11は、第1の面11aと、第1の面11aとは反対の側の第2の面11b、とを有する。 第2の面11bに、発光層12(ドット線)を含む半導体積層体13が設けられる。半導体積層体13は、支持基板11の側とは反対の側の面に、表面から発光層12の下方まで到達する段差部を含む。段差部は、底面13aを有する。
受光素子20は、たとえば、Si基板に1つのpn接合からなる1つのフォトダイオードが互いに絶縁されて複数形成されている。さらに、複数のシリコンフォトダイオードは直列接続されてフォトダイオードアレイ20aをなしている。このようにすると、光結合装置に内蔵されたMOSFETのゲートのしきい値電圧Vth以上の電圧を供給できるので好ましい。
複数のpn接合領域は、異なるサイズの領域を含んでいてもよい。発光素子10の放出光は発光中心(たとえば、図2(b)に点Oで表す)を通る光軸上で光強度が最大であり、光軸から離間した領域ほど光強度が低下する。なお、本実施形態では、受光面22が、半導体発光素子10の光出射面18の外側にはみ出すことはないので、極端に光起電力が低下することは抑制される。
図5(a)のように、受光素子20は、制御回路28をさらに有することができる。制御回路28は、フォトダイオードアレイ20aの第1の電極27と、第2の電極26と、にそれぞれ接続されている。このような構成とすると、MOSFET(M1、M2)のそれぞれのゲートに電圧を供給できる。
比較例では、入力リード130に接着された発光素子110と、出力リード140に接着された受光素子120と、は、透光性樹脂層168内で離間距離L1を保って互いに対向するように設けられる。このため、放出光が広がり、一部の光しか受光面に到達できず、電流は略2.5μAと低い。また、透光性樹脂層168を覆うように遮光性樹脂層170を設ける必要がある。対向型では、離間距離L1を低減するのに限界がある。
第2の実施形態にかかる光結合装置は、発光素子10と、受光素子20と、MOSFET(M1、M2)と、接着層34と、入力端子30と、出力端子40と、樹脂成型体70と、を有する。
Claims (4)
- 光出射面を有する第1の面と前記第1の面とは反対の側の第2の面とを有する基板と、前記基板の前記第2の面に設けられ、発光層を含む半導体積層体と、前記基板とは反対の側の前記半導体積層体の面に設けられた第1および第2の電極と、を有する発光素子と、 複数のpn接合が直列接続されて構成された受光面を有する受光素子と、
前記基板の前記第1の面と前記受光素子の前記受光面の側とを接着し、透光性および絶縁性を有する接着層と、
前記発光素子と前記受光素子とを覆い遮光性を有する樹脂成型体と、
備え、
前記受光面は、前記第2の電極に対向して設けられ、前記第2の電極の形状と同一であって、はみ出すことがないように配置され、さらに、前記第1電極には対向して設けられない光結合装置。 - MOSFETをさらに備え、
前記MOSFETは、前記受光素子の第1の電極と接続されたゲートと、前記受光素子の第2の電極と接続されたソースと、を有する請求項1記載の光結合装置。 - 前記MOSFETは、ソース・コモンで接続された2つのMOSFETを含む請求項2記載の光結合装置。
- 前記複数のpn接合は、メタル配線部により直列接続され、
前記受光素子の前記第1および第2の電極は、前記複数のpn接合の両端にそれぞれ接続された請求項2または3に記載の光結合装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2013061150A JP5865859B2 (ja) | 2013-03-22 | 2013-03-22 | 光結合装置 |
US14/025,027 US9450134B2 (en) | 2013-03-22 | 2013-09-12 | Photocoupler |
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JP2013061150A JP5865859B2 (ja) | 2013-03-22 | 2013-03-22 | 光結合装置 |
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JP2015252154A Division JP6226393B2 (ja) | 2015-12-24 | 2015-12-24 | 光結合装置 |
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JP5865859B2 true JP5865859B2 (ja) | 2016-02-17 |
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5985452B2 (ja) * | 2013-09-12 | 2016-09-06 | 株式会社東芝 | 半導体装置 |
JP2015056651A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 受光素子と光結合型絶縁装置 |
JP2015177056A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | フォトリレー |
JP2015188051A (ja) * | 2014-03-14 | 2015-10-29 | 株式会社東芝 | 光結合装置 |
JP6318004B2 (ja) | 2014-05-27 | 2018-04-25 | ローム株式会社 | Ledモジュール、ledモジュールの実装構造 |
JP6371725B2 (ja) | 2015-03-13 | 2018-08-08 | 株式会社東芝 | 半導体モジュール |
EP3082169A1 (de) * | 2015-04-17 | 2016-10-19 | AZUR SPACE Solar Power GmbH | Stapelförmiger optokopplerbaustein |
JP6438363B2 (ja) * | 2015-07-28 | 2018-12-12 | 株式会社東芝 | 光結合装置 |
JP6445940B2 (ja) * | 2015-08-03 | 2018-12-26 | 株式会社東芝 | 光結合装置 |
JP6626294B2 (ja) | 2015-09-04 | 2019-12-25 | 株式会社東芝 | 半導体装置および光結合装置 |
JP6402091B2 (ja) * | 2015-12-17 | 2018-10-10 | 株式会社東芝 | 光結合装置 |
CN110168745B (zh) * | 2017-01-05 | 2023-02-17 | 松下控股株式会社 | 半导体继电器 |
JP7002424B2 (ja) | 2018-08-28 | 2022-01-20 | 株式会社東芝 | 半導体装置 |
JP7273701B2 (ja) * | 2019-12-04 | 2023-05-15 | 株式会社東芝 | フォトリレー |
JP7273741B2 (ja) * | 2020-02-07 | 2023-05-15 | 株式会社東芝 | 光結合装置及び高周波装置 |
JP7413217B2 (ja) * | 2020-09-17 | 2024-01-15 | 株式会社東芝 | 半導体装置 |
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US4227098A (en) * | 1979-02-21 | 1980-10-07 | General Electric Company | Solid state relay |
US4571374A (en) | 1984-12-27 | 1986-02-18 | Minnesota Mining And Manufacturing Company | Multilayer dry-film positive-acting laminable photoresist with two photoresist layers wherein one layer includes thermal adhesive |
JPS61156251U (ja) * | 1985-03-20 | 1986-09-27 | ||
DE3633251A1 (de) * | 1986-09-30 | 1988-03-31 | Siemens Ag | Optoelektronisches koppelelement |
US4805006A (en) * | 1987-03-25 | 1989-02-14 | Matsushita Electric Works, Ltd. | Light receiving element |
JPH02206182A (ja) | 1989-02-06 | 1990-08-15 | Hitachi Ltd | ホトカプラ |
JP2981361B2 (ja) * | 1993-04-01 | 1999-11-22 | シャープ株式会社 | フォトカプラ |
EP0645827B1 (de) * | 1993-09-23 | 1998-02-11 | Siemens Aktiengesellschaft | Optokoppler und Verfahren zu dessen Herstellung |
JPH0936413A (ja) | 1995-07-14 | 1997-02-07 | Denso Corp | 光結合半導体装置 |
JPH11150291A (ja) | 1997-11-19 | 1999-06-02 | Sharp Corp | 光結合装置 |
JP3610235B2 (ja) * | 1998-07-22 | 2005-01-12 | キヤノン株式会社 | 面型発光素子装置 |
JP2008091671A (ja) * | 2006-10-03 | 2008-04-17 | Toshiba Corp | 光結合装置 |
JP5381280B2 (ja) * | 2009-04-23 | 2014-01-08 | オムロン株式会社 | 光結合装置 |
-
2013
- 2013-03-22 JP JP2013061150A patent/JP5865859B2/ja active Active
- 2013-09-12 US US14/025,027 patent/US9450134B2/en active Active
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JP2014187210A (ja) | 2014-10-02 |
US20140284629A1 (en) | 2014-09-25 |
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