JP2014013889A - 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法 - Google Patents

有機アミノジシラン前駆体、及びそれを含む膜の堆積方法 Download PDF

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JP2014013889A
JP2014013889A JP2013117293A JP2013117293A JP2014013889A JP 2014013889 A JP2014013889 A JP 2014013889A JP 2013117293 A JP2013117293 A JP 2013117293A JP 2013117293 A JP2013117293 A JP 2013117293A JP 2014013889 A JP2014013889 A JP 2014013889A
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group
branched
disilane
linear
bis
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Japanese (ja)
Inventor
Manchao Xiao
シャオ マンチャオ
Xinjian Lei
レイ シンチャン
Daniel P Spence
ピー．スペンス ダニエル
Chandra Hairpin
チャンドラ ハリピン
Bing Han
ビン ハン
O'neal Leonard Marc
レオナルド オニール マーク
Steven Gerard Mayorga
ジェラルド マヨルガ スティーブン
Mallikarjunan Anupama
マリカージュナン アヌパマ
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Air Products and Chemicals Inc
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Air Products and Chemicals Inc
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Publication of JP2014013889A publication Critical patent/JP2014013889A/ja
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0682—Preparation by direct nitridation of silicon
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    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/0828—Carbonitrides or oxycarbonitrides of metals, boron or silicon
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    • C01B33/02—Silicon
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    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/126—Preparation of silica of undetermined type
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    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
JP2013117293A 2012-06-01 2013-06-03 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法 Withdrawn JP2014013889A (ja)

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US201261654508P 2012-06-01 2012-06-01
US61/654,508 2012-06-01
US13/902,300 2013-05-24
US13/902,300 US9337018B2 (en) 2012-06-01 2013-05-24 Methods for depositing films with organoaminodisilane precursors

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JP2015106433A Active JP6662579B2 (ja) 2012-06-01 2015-05-26 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法
JP2018129282A Active JP6904924B2 (ja) 2012-06-01 2018-07-06 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法
JP2021069016A Active JP7177209B2 (ja) 2012-06-01 2021-04-15 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法

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JP2015045082A (ja) * 2013-07-31 2015-03-12 東京エレクトロン株式会社 シリコン膜の成膜方法、薄膜の成膜方法および断面形状制御方法
JP2017523134A (ja) * 2014-05-30 2017-08-17 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ モノアミノシラン化合物
WO2015184202A1 (en) * 2014-05-30 2015-12-03 Dow Corning Corporation Diaminosilane compounds
WO2015184201A1 (en) * 2014-05-30 2015-12-03 Dow Corning Corporation Monoaminosilane compounds
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US10316407B2 (en) 2014-10-24 2019-06-11 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing films
JP2017533589A (ja) * 2014-10-24 2017-11-09 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の堆積のための組成物及びそれを使用した方法
JP2017535077A (ja) * 2014-10-24 2017-11-24 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー ケイ素含有膜の堆積のための組成物及びそれを使用した方法
US10106890B2 (en) 2014-10-24 2018-10-23 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
KR20170075766A (ko) * 2014-10-24 2017-07-03 버슘머트리얼즈 유에스, 엘엘씨 규소-함유 필름의 증착을 위한 조성물 및 이를 사용하는 방법
KR102079501B1 (ko) * 2014-10-24 2020-02-20 버슘머트리얼즈 유에스, 엘엘씨 규소-함유 필름의 증착을 위한 조성물 및 이를 사용하는 방법
US12049695B2 (en) 2014-10-24 2024-07-30 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
JP2018528615A (ja) * 2015-09-11 2018-09-27 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー コンフォーマルな金属又はメタロイド窒化ケイ素膜を堆積するための方法及びその結果として得られる膜
JP2018534772A (ja) * 2015-10-06 2018-11-22 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー コンフォーマルな金属又はメタロイド窒化ケイ素膜の堆積方法
KR20180136446A (ko) * 2016-03-23 2018-12-24 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Si-함유 막 형성 조성물 및 이를 제조하고 사용하는 방법
KR102403096B1 (ko) 2016-03-23 2022-05-26 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Si-함유 막 형성 조성물 및 이를 제조하고 사용하는 방법
JP2020529983A (ja) * 2017-07-31 2020-10-15 ディーディーピー スペシャリティ エレクトロニック マテリアルズ ユーエス ナイン，エルエルシー １，１，１−トリス（有機アミノ）ジシラン化合物及びこれを調製する方法

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