JP6445375B2 - 有機アミノジシラン前駆体、及びそれを含む膜の堆積方法 - Google Patents
有機アミノジシラン前駆体、及びそれを含む膜の堆積方法 Download PDFInfo
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- JP6445375B2 JP6445375B2 JP2015075074A JP2015075074A JP6445375B2 JP 6445375 B2 JP6445375 B2 JP 6445375B2 JP 2015075074 A JP2015075074 A JP 2015075074A JP 2015075074 A JP2015075074 A JP 2015075074A JP 6445375 B2 JP6445375 B2 JP 6445375B2
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- 239000002243 precursor Substances 0.000 title claims description 176
- 238000000034 method Methods 0.000 title claims description 148
- 238000000151 deposition Methods 0.000 title claims description 54
- 229910052710 silicon Inorganic materials 0.000 claims description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 112
- 239000010703 silicon Substances 0.000 claims description 112
- 239000000758 substrate Substances 0.000 claims description 76
- 230000008569 process Effects 0.000 claims description 70
- 125000003342 alkenyl group Chemical group 0.000 claims description 63
- 125000000304 alkynyl group Chemical group 0.000 claims description 60
- 238000000231 atomic layer deposition Methods 0.000 claims description 58
- 125000006575 electron-withdrawing group Chemical group 0.000 claims description 57
- 238000010926 purge Methods 0.000 claims description 55
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 53
- 125000006619 (C1-C6) dialkylamino group Chemical group 0.000 claims description 52
- 229910052739 hydrogen Inorganic materials 0.000 claims description 52
- 125000000041 C6-C10 aryl group Chemical group 0.000 claims description 51
- 239000001257 hydrogen Substances 0.000 claims description 51
- 125000000217 alkyl group Chemical group 0.000 claims description 44
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 43
- 238000005229 chemical vapour deposition Methods 0.000 claims description 43
- 229910052760 oxygen Inorganic materials 0.000 claims description 43
- 239000001301 oxygen Substances 0.000 claims description 43
- 239000000203 mixture Substances 0.000 claims description 42
- 125000001931 aliphatic group Chemical group 0.000 claims description 41
- 150000002431 hydrogen Chemical class 0.000 claims description 39
- 229910007991 Si-N Inorganic materials 0.000 claims description 36
- 229910006294 Si—N Inorganic materials 0.000 claims description 36
- 229910008045 Si-Si Inorganic materials 0.000 claims description 35
- 229910006411 Si—Si Inorganic materials 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 29
- 125000003118 aryl group Chemical group 0.000 claims description 28
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- DSWDPPJBJCXDCZ-UHFFFAOYSA-N ctk0h9754 Chemical compound N[SiH2][SiH3] DSWDPPJBJCXDCZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- 125000004122 cyclic group Chemical group 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 23
- 238000009835 boiling Methods 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 238000005137 deposition process Methods 0.000 claims description 18
- -1 1,2-bis (diethylmethylamino) disilane Chemical compound 0.000 claims description 15
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 14
- 239000006227 byproduct Substances 0.000 claims description 14
- 239000003638 chemical reducing agent Substances 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 150000002170 ethers Chemical class 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 150000003512 tertiary amines Chemical class 0.000 claims description 3
- 125000001302 tertiary amino group Chemical group 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims 2
- NHWMIUYDTSAKBC-UHFFFAOYSA-N N-(diethylaminosilylsilyl)-N-ethylethanamine Chemical compound CCN(CC)[SiH2][SiH2]N(CC)CC NHWMIUYDTSAKBC-UHFFFAOYSA-N 0.000 claims 1
- VTXVGYAICHZHDN-UHFFFAOYSA-N N-(dimethylaminosilylsilyl)-N-methylmethanamine Chemical compound CN(C)[SiH2][SiH2]N(C)C VTXVGYAICHZHDN-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 139
- 230000008021 deposition Effects 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 125000004663 dialkyl amino group Chemical group 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 10
- GNZBDLMUHMACNZ-UHFFFAOYSA-N N-(disilanyl)-N-propan-2-ylpropan-2-amine Chemical compound CC(C)N([SiH2][SiH3])C(C)C GNZBDLMUHMACNZ-UHFFFAOYSA-N 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 125000003545 alkoxy group Chemical group 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 125000000524 functional group Chemical group 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 8
- 239000003446 ligand Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 125000001424 substituent group Chemical group 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- ANSYKGYLJJTCPH-UHFFFAOYSA-N N-butan-2-yl-N-(disilanyl)butan-2-amine Chemical compound CCC(C)N([SiH2][SiH3])C(C)CC ANSYKGYLJJTCPH-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000004817 gas chromatography Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- CZSDVFCVCGAKLF-UHFFFAOYSA-N CCC(C)N(C(C)CC)[SiH2][SiH2]N(C(C)CC)C(C)CC Chemical compound CCC(C)N(C(C)CC)[SiH2][SiH2]N(C(C)CC)C(C)CC CZSDVFCVCGAKLF-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- HWHGQKHLOCJGPB-KPWCQOOUSA-N [(2S,6R)-2,6-dimethylpiperidin-1-yl]-[(2S,6R)-2,6-dimethylpiperidin-1-yl]silylsilane Chemical compound C[C@H]1CCC[C@@H](C)N1[SiH2][SiH2]N1[C@H](C)CCC[C@@H]1C HWHGQKHLOCJGPB-KPWCQOOUSA-N 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- COUMSRIIJWJSSY-UHFFFAOYSA-N chloro(chlorosilyl)silane Chemical compound Cl[SiH2][SiH2]Cl COUMSRIIJWJSSY-UHFFFAOYSA-N 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- HOXINJBQVZWYGZ-UHFFFAOYSA-N fenbutatin oxide Chemical compound C=1C=CC=CC=1C(C)(C)C[Sn](O[Sn](CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C1=CC=CC=C1 HOXINJBQVZWYGZ-UHFFFAOYSA-N 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 0 *N(*)*C*N(*)* Chemical compound *N(*)*C*N(*)* 0.000 description 2
- LISDBLOKKWTHNH-UHFFFAOYSA-N 1,3,5-Trisilacyclohexan Natural products C1[SiH2]C[SiH2]C[SiH2]1 LISDBLOKKWTHNH-UHFFFAOYSA-N 0.000 description 2
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- DMSPFACBWOXIBX-UHFFFAOYSA-N 1-phenyl-N-silylmethanamine Chemical compound [SiH3]NCC1=CC=CC=C1 DMSPFACBWOXIBX-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- CQXQGICGTOFIAG-UHFFFAOYSA-N CC1CCCC(C)N1[SiH2][SiH3] Chemical compound CC1CCCC(C)N1[SiH2][SiH3] CQXQGICGTOFIAG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- SFLARCZJKUXPCE-UHFFFAOYSA-N N-butan-2-yl-N-silylbutan-2-amine Chemical compound CCC(C)N([SiH3])C(C)CC SFLARCZJKUXPCE-UHFFFAOYSA-N 0.000 description 2
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 description 2
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 2
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 2
- SRLSISLWUNZOOB-UHFFFAOYSA-N ethyl(methyl)azanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C SRLSISLWUNZOOB-UHFFFAOYSA-N 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- WMAAIGILTZEOHE-UHFFFAOYSA-N n-[bis(ethylamino)-[tris(ethylamino)silyl]silyl]ethanamine Chemical compound CCN[Si](NCC)(NCC)[Si](NCC)(NCC)NCC WMAAIGILTZEOHE-UHFFFAOYSA-N 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- DFKWUUAUOWORTP-UHFFFAOYSA-N piperidin-1-yl(piperidin-1-ylsilyl)silane Chemical compound C1CCCCN1[SiH2][SiH2]N1CCCCC1 DFKWUUAUOWORTP-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BJNGFYSJWFVHAO-UHFFFAOYSA-N (2,5-dimethylpiperidin-1-yl)-silylsilane Chemical compound CC1N(CC(CC1)C)[SiH2][SiH3] BJNGFYSJWFVHAO-UHFFFAOYSA-N 0.000 description 1
- SDGKUVSVPIIUCF-KNVOCYPGSA-N (2r,6s)-2,6-dimethylpiperidine Chemical compound C[C@H]1CCC[C@@H](C)N1 SDGKUVSVPIIUCF-KNVOCYPGSA-N 0.000 description 1
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- PUNGSQUVTIDKNU-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-1,3,5,7,9,2$l^{3},4$l^{3},6$l^{3},8$l^{3},10$l^{3}-pentaoxapentasilecane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O[Si](C)O1 PUNGSQUVTIDKNU-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- AWAGIEIVNCPXJH-UHFFFAOYSA-N 2-(amino-butan-2-yl-silylsilyl)butane Chemical class C(C)(CC)[Si]([SiH3])(N)C(C)CC AWAGIEIVNCPXJH-UHFFFAOYSA-N 0.000 description 1
- GTEXIOINCJRBIO-UHFFFAOYSA-N 2-[2-(dimethylamino)ethoxy]-n,n-dimethylethanamine Chemical compound CN(C)CCOCCN(C)C GTEXIOINCJRBIO-UHFFFAOYSA-N 0.000 description 1
- IVSPVXKJEGPQJP-UHFFFAOYSA-N 2-silylethylsilane Chemical compound [SiH3]CC[SiH3] IVSPVXKJEGPQJP-UHFFFAOYSA-N 0.000 description 1
- TWFRJOPJNYGOKA-UHFFFAOYSA-N 2-silylpropan-2-ylsilane Chemical compound CC(C)([SiH3])[SiH3] TWFRJOPJNYGOKA-UHFFFAOYSA-N 0.000 description 1
- WKYWHPWEQYJUAT-UHFFFAOYSA-N 7-[3-(aminomethyl)-4-propoxyphenyl]-4-methylquinolin-2-amine Chemical compound CCCOC1=C(C=C(C=C1)C2=CC3=C(C=C2)C(=CC(=N3)N)C)CN WKYWHPWEQYJUAT-UHFFFAOYSA-N 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 125000006725 C1-C10 alkenyl group Chemical group 0.000 description 1
- JVCWKXBYGCJHDF-UHFFFAOYSA-N CC(C)(C)N=[W](N(C)C)(=NC(C)(C)C)N(C)C Chemical compound CC(C)(C)N=[W](N(C)C)(=NC(C)(C)C)N(C)C JVCWKXBYGCJHDF-UHFFFAOYSA-N 0.000 description 1
- QQBINNXWRDRCHB-UHFFFAOYSA-N CCC(C)(C)N=[Ta](N(C)C)(N(C)C)N(C)C Chemical compound CCC(C)(C)N=[Ta](N(C)C)(N(C)C)N(C)C QQBINNXWRDRCHB-UHFFFAOYSA-N 0.000 description 1
- PDGHBHKZHSFTHO-UHFFFAOYSA-N CCN(C)[Ta](=NC(C)(C)C)(N(C)CC)N(C)CC Chemical compound CCN(C)[Ta](=NC(C)(C)C)(N(C)CC)N(C)CC PDGHBHKZHSFTHO-UHFFFAOYSA-N 0.000 description 1
- GKBKXJWUIIYCBD-UHFFFAOYSA-N CCN(C)[Ta](N(C)CC)(N(C)CC)=NC(C)(C)CC Chemical compound CCN(C)[Ta](N(C)CC)(N(C)CC)=NC(C)(C)CC GKBKXJWUIIYCBD-UHFFFAOYSA-N 0.000 description 1
- KKSXSQXELVXONV-UHFFFAOYSA-N CCN(C)[W](=NC(C)(C)C)(=NC(C)(C)C)N(C)CC Chemical compound CCN(C)[W](=NC(C)(C)C)(=NC(C)(C)C)N(C)CC KKSXSQXELVXONV-UHFFFAOYSA-N 0.000 description 1
- YYKBKTFUORICGA-UHFFFAOYSA-N CCN(CC)[Ta](=NC(C)(C)C)(N(CC)CC)N(CC)CC Chemical compound CCN(CC)[Ta](=NC(C)(C)C)(N(CC)CC)N(CC)CC YYKBKTFUORICGA-UHFFFAOYSA-N 0.000 description 1
- GODRSDDUYGEYDK-UHFFFAOYSA-N CCN(CC)[Ta](N(CC)CC)(N(CC)CC)=NC(C)(C)CC Chemical compound CCN(CC)[Ta](N(CC)CC)(N(CC)CC)=NC(C)(C)CC GODRSDDUYGEYDK-UHFFFAOYSA-N 0.000 description 1
- IVBDGJZEAHBGFJ-UHFFFAOYSA-N CCN(CC)[W](=NC(C)(C)C)(=NC(C)(C)C)N(CC)CC Chemical compound CCN(CC)[W](=NC(C)(C)C)(=NC(C)(C)C)N(CC)CC IVBDGJZEAHBGFJ-UHFFFAOYSA-N 0.000 description 1
- LYWGPKCZWZCWAG-UHFFFAOYSA-N CCN=[Ta](N(C)C)(N(C)C)N(C)C Chemical compound CCN=[Ta](N(C)C)(N(C)C)N(C)C LYWGPKCZWZCWAG-UHFFFAOYSA-N 0.000 description 1
- AEKOOYWLWGERES-UHFFFAOYSA-N CCN=[Ta](N(C)CC)(N(C)CC)N(C)CC Chemical compound CCN=[Ta](N(C)CC)(N(C)CC)N(C)CC AEKOOYWLWGERES-UHFFFAOYSA-N 0.000 description 1
- MTFSYWLHSFZGBL-UHFFFAOYSA-N C[SiH2]C(=O)[SiH2]C[SiH2]C(=O)[SiH2]C Chemical compound C[SiH2]C(=O)[SiH2]C[SiH2]C(=O)[SiH2]C MTFSYWLHSFZGBL-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 1
- WFNUAGZMSKASFQ-UHFFFAOYSA-N N-(disilanyl)-N-ethylethanamine Chemical compound CCN(CC)[SiH2][SiH3] WFNUAGZMSKASFQ-UHFFFAOYSA-N 0.000 description 1
- WJIVAMBJMCBKAX-UHFFFAOYSA-N N-(disilanyl)-N-methylmethanamine Chemical compound CN(C)[SiH2][SiH3] WJIVAMBJMCBKAX-UHFFFAOYSA-N 0.000 description 1
- ARXIWCFBWKXDOH-UHFFFAOYSA-N N-(disilanyl)propan-1-amine Chemical compound C(CC)N[SiH2][SiH3] ARXIWCFBWKXDOH-UHFFFAOYSA-N 0.000 description 1
- HTLZVHNRZJPSMI-UHFFFAOYSA-N N-ethylpiperidine Chemical compound CCN1CCCCC1 HTLZVHNRZJPSMI-UHFFFAOYSA-N 0.000 description 1
- YNWUDRUYRBGKCI-UHFFFAOYSA-N N[Si](N)(Cl)[Si](Cl)(Cl)Cl Chemical compound N[Si](N)(Cl)[Si](Cl)(Cl)Cl YNWUDRUYRBGKCI-UHFFFAOYSA-N 0.000 description 1
- YUSJEOODESTHPL-UHFFFAOYSA-N N[Si]([SiH3])(Cl)N Chemical compound N[Si]([SiH3])(Cl)N YUSJEOODESTHPL-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- PDPXHRBRYUQCQA-SFOWXEAESA-N [(1s)-1-fluoro-2-(hydroxyamino)-2-oxoethyl]phosphonic acid Chemical compound ONC(=O)[C@@H](F)P(O)(O)=O PDPXHRBRYUQCQA-SFOWXEAESA-N 0.000 description 1
- TUMVOIIZZOUBBW-UHFFFAOYSA-N [SiH3][SiH3].C(CC)NCCC Chemical compound [SiH3][SiH3].C(CC)NCCC TUMVOIIZZOUBBW-UHFFFAOYSA-N 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- LNENVNGQOUBOIX-UHFFFAOYSA-N azidosilane Chemical compound [SiH3]N=[N+]=[N-] LNENVNGQOUBOIX-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- IQJLBKXIQUCFDL-UHFFFAOYSA-N bis(silylmethylsilyl)methanone Chemical compound [SiH3]C[SiH2]C(=O)[SiH2]C[SiH3] IQJLBKXIQUCFDL-UHFFFAOYSA-N 0.000 description 1
- PPJPTAQKIFHZQU-UHFFFAOYSA-N bis(tert-butylimino)tungsten;dimethylazanide Chemical compound C[N-]C.C[N-]C.CC(C)(C)N=[W]=NC(C)(C)C PPJPTAQKIFHZQU-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 125000004803 chlorobenzyl group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- OIKHZBFJHONJJB-UHFFFAOYSA-N dimethyl(phenyl)silicon Chemical compound C[Si](C)C1=CC=CC=C1 OIKHZBFJHONJJB-UHFFFAOYSA-N 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000013628 high molecular weight specie Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- OKHRRIGNGQFVEE-UHFFFAOYSA-N methyl(diphenyl)silicon Chemical compound C=1C=CC=CC=1[Si](C)C1=CC=CC=C1 OKHRRIGNGQFVEE-UHFFFAOYSA-N 0.000 description 1
- DSKSAXYFIBWFLQ-UHFFFAOYSA-N methyl(methylsilylmethyl)silane Chemical compound C[SiH2]C[SiH2]C DSKSAXYFIBWFLQ-UHFFFAOYSA-N 0.000 description 1
- OFLMWACNYIOTNX-UHFFFAOYSA-N methyl(methylsilyloxy)silane Chemical compound C[SiH2]O[SiH2]C OFLMWACNYIOTNX-UHFFFAOYSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- OIALYCJNSIXQJQ-UHFFFAOYSA-N methylsilyl(trimethylsilylcarbonylsilylmethylsilyl)methanone Chemical compound C[SiH2]C(=O)[SiH2]C[SiH2]C(=O)[Si](C)(C)C OIALYCJNSIXQJQ-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
- OBYVIBDTOCAXSN-UHFFFAOYSA-N n-butan-2-ylbutan-2-amine Chemical compound CCC(C)NC(C)CC OBYVIBDTOCAXSN-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 125000000168 pyrrolyl group Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- HVXTXDKAKJVHLF-UHFFFAOYSA-N silylmethylsilane Chemical compound [SiH3]C[SiH3] HVXTXDKAKJVHLF-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- XOAJIYVOSJHEQB-UHFFFAOYSA-N trimethyl trimethoxysilyl silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)OC XOAJIYVOSJHEQB-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- C—CHEMISTRY; METALLURGY
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Description
ここに記載した組成物の特定の実施態様において、典型的な溶媒としては、限定されないが、エーテル、第三級アミン、アルキル炭化水素、芳香族炭化水素、第三級アミノエーテル、及びこれらの組合せが挙げられる。特定の実施態様では、溶媒の沸点と、有機アミノジシランの沸点との差は、40℃以下である。
反応チャンバーに上記基材の上記少なくとも1つの表面を与える工程;及び
次の式Iで表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体から、化学気相成長プロセス及び原子層堆積プロセスから選択される堆積プロセスによって、上記少なくとも1つの表面に上記ケイ素含有膜を形成する工程:
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体から選択される少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.上記反応器を、パージガスでパージする工程;
d.上記反応器に、酸素含有源を導入する工程;
e.随意に、上記反応器を、パージガスでパージする工程;
ここで、上記膜の所望の厚みが得られるまで、b〜eの工程を繰り返す。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体及び酸素源を導入する工程:
c.上記反応器を、上記酸素含有源と共にパージガスでパージする工程;
d.RFプラズマを適用する工程;
e.上記反応器を、パージガスでパージする工程、又は上記反応器を排気して反応副生成物を除去する工程;
ここで、上記膜の所望の厚みが得られるまで、b〜eの工程を繰り返す。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.酸素含有源を同時に与えて、基材の上記少なくとも1つの表面に上記酸化ケイ素膜を堆積させる工程。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.上記反応器を、パージガスでパージする工程;
d.上記反応器に、窒素含有源を導入する工程;
e.上記反応器を、パージガスでパージする工程;
ここで、上記窒化ケイ素膜の所望の厚みが得られるまで、b〜eの工程を繰り返す。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体及び窒素含有源を導入する工程:
d.RFプラズマを適用する工程;及び
e.上記反応器をパージガスでパージして、又は上記反応器を排気して、反応副生成物を除去する工程;
ここで、上記膜の所望の厚みが得られるまで、b〜eの工程を繰り返す。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体及び窒素含有源を導入する工程:
1以上の基材を反応器に配置し、これを周囲温度から約700℃の範囲の1以上の温度に加熱する工程;
次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
随意に、還元剤源を反応器に与えて、上記少なくとも1種の有機アミノジシラン前駆体と少なくとも部分的に反応させて、そしてケイ素含有膜を1以上の基材に堆積させる工程。
還元剤を用いる実施態様では、還元剤は、水素、水素プラズマ、塩化水素からなる群より選択される。特定の実施態様では、この反応器は、堆積プロセスの間に、10mTorr〜760Torrの範囲の圧力に維持される。上記の工程を、ここに記載した方法に関して1サイクルと定義し、所望の厚みの膜が得られるまで、この工程のサイクルを繰り返すことができる。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
ここで、上記膜の所望の厚みが得られるまで、b及びcの工程を繰り返す。
この実施態様、又は他の実施態様において、上記シリコン膜の厚みは、1Å超、1〜10000Å、1〜1000Å、又は1〜100Åとなることができる。
a.基材をALD反応器に与える工程;
b.上記ALD反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.上記少なくとも1種の有機アミノジシラン前駆体を、基材に化学吸着させる工程;
d.未吸着の上記少なくとも1種の有機アミノジシラン前駆体を、パージガスを用いてパージする工程;
e.窒素含有源を、加熱した上記基材上に与えて、上記吸着した少なくとも1種の有機アミノジシラン前駆体と反応させる工程;及び
f.随意に、あらゆる未反応の窒素含有源をパージする工程。
上記方法の特定の態様では、所望の厚みの膜が得られるまで工程b〜fを繰り返す。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iで表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.上記少なくとも1種の有機アミノジシラン前駆体を、基材に化学吸着させる工程;
d.上記未吸着の少なくとも1種の有機アミノジシラン前駆体を、排気する又はパージガスを用いてパージする工程;
e.酸素含有源又は窒素源を、加熱した上記基材上に与えて、上記吸着した少なくとも1種の有機アミノジシラン前駆体と反応させる工程;及び
f.随意に、あらゆる未反応の酸素含有源又は窒素源をパージする工程。
上記方法の特定の態様では、所望の厚みの膜が得られるまで工程b〜fを繰り返す。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体及び酸素を導入する工程:
c.上記反応器を、酸素と共にパージガスでパージする工程;
d.RFプラズマを適用する工程;
e.上記反応器を、パージガスでパージする工程、又は上記反応器を排気して反応副生成物を除去する工程;
ここで、上記膜の所望の厚みが得られるまで、b〜eの工程を繰り返す。
a.周囲温度(例えば、25℃)から約700℃までの範囲の1点以上の温度に加熱した反応器に、1以上の基材を配置するステップ;
b.次の式Iで表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入するステップ:
c.酸素含有源を、上記反応器に同時に与えて、上記少なくとも1種の有機アミノジシラン前駆体と少なくとも部分的に反応させ、そして上記1以上の基材にケイ素含有膜を堆積させるステップ。
a.1以上の基材を反応器に配置し、これを周囲温度から約700℃の範囲の1以上の温度に加熱する工程;
b.次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.還元剤源を上記反応器に与えて、上記少なくとも1種の有機アミノジシラン前駆体と少なくとも部分的に反応させて、そしてケイ素含有膜を1以上の基材に堆積させる工程。
これらの実施態様では、還元剤は、水素、水素プラズマ、塩化水素からなる群より選択される。
a.1以上の基材を反応器に配置し、これを周囲温度から約700℃の範囲の温度に加熱する工程;
b.次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.窒素含有源を、上記反応器に同時に与えて、上記少なくとも1種の有機アミノジシラン前駆体と少なくとも部分的に反応させ、そして上記1以上の基材にケイ素含有膜を堆積させるステップ。このCVD法のある種の実施態様では、上記反応器を、上記堆積プロセスの間に10mTorr〜760Torrの範囲の圧力で維持する。
a.基材を反応器に配置し、これを周囲温度から約700℃の範囲の温度に加熱する工程;
b.次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.還元剤源を上記反応器に与えて、上記少なくとも1種の有機アミノジシラン前駆体と少なくとも部分的に反応させて、そしてケイ素含有膜を1以上の基材に堆積させる工程、ここで還元剤は、水素、水素プラズマ、塩化水素からなる群より選択される。
ここに記載した方法に関して、上記の工程は1サイクルを構成し;このサイクルを、ケイ素含有膜の所望の厚みを得るまで繰り返すことができる。上記膜の所望の厚みは、1Å超、1〜10000Åとなることができる。
a.基材を反応器に与える工程;
b.上記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.上記反応器を、パージガスでパージする工程、
ここで、上記シリコン膜の所望の厚みが得られるまで、工程b及びcを繰り返す。
機械的撹拌器、コンデンサー、及び添加ロートを備えた3つ口丸底フラスコにおいて、1当量の1,2−ジクロロジシランのヘキサン溶液を、コールドバスを用いて−10℃に冷却した。撹拌しながら、4当量のジ−sec−ブチルアミンを、添加ロートから滴下して加えた。添加が完了した後に、反応混合物を室温まで温めた。この反応混合物を室温で2時間撹拌して、続いて濾過を行った。溶媒のヘキサンを濾液から蒸溜によって除去した。生成物である1,2−ビス(ジ−sec−ブチルアミノ)ジシランを、減圧蒸留によって得た。ガスクロマトグラフィ(GC)は、生成物が99%超の純度の1,2−ビス(ジ−sec−ブチルアミノ)ジシランであることを示した。
機械的撹拌器、コンデンサー、及び添加ロートを備えた3つ口丸底フラスコにおいて、1当量の1,2−ジクロロジシランのヘキサン溶液を、コールドバスを用いて−10℃に冷却した。撹拌しながら、4当量のシス−2,6−ジメチルピペリジンを、添加ロートから滴下して加えた。添加が完了した後に、反応混合物を室温まで温めた。この反応混合物を室温で2時間撹拌して、続いて濾過を行った。溶媒のヘキサンを濾液から蒸溜によって除去した。生成物である1,2−ビス(シス−2,6−ジメチルピペリジノ)ジシランを、減圧蒸留によって得た。ガスクロマトグラフィ(GC)は、生成物が99%超の純度の1,2−ビス(シス−2,6−ジメチルピペリジノ)ジシランであることを示した。
Claims (22)
- 次の(a)及び(b)を含む、ケイ素含有膜を形成するための組成物:
(a)次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体:
(b)前記有機アミノジシランの沸点との差が40℃以下である沸点を有する溶媒。 - 前記有機アミノジシラン前駆体が、1,2−ビス(ジメチルアミノ)ジシラン、1,2−ビス(ジエチルアミノ)ジシラン、1,2−ビス(ジエチルメチルアミノ)ジシラン、1,2−ビス(ジ−イソ−プロピルアミノ)ジシランからなる群より選択される1種を含む、請求項1に記載の組成物。
- 前記溶媒が、エーテル、第三級アミン、アルキル炭化水素、芳香族炭化水素、及び第三級アミノエーテルからなる群より選択される少なくとも1種を含む、請求項1又は2に記載の組成物。
- 次の工程を含む、化学気相成長プロセス及び原子層堆積プロセスから選択される堆積プロセスによって、基材の少なくとも1つの表面にケイ素含有膜を形成する方法:
反応器に前記基材の前記少なくとも1つの表面を与える工程;及び
次の式Iで表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
窒素含有源を前記反応器に導入する工程であって、前記少なくとも1種の有機アミノジシラン前駆体と、前記窒素含有源とを反応させて、前記ケイ素含有膜を前記少なくとも1つの表面に与える工程。 - 次の工程を含む、原子層堆積(ALD)の堆積プロセスによってケイ素含有膜を形成する方法:
a.基材をALD反応器に与える工程;
b.前記ALD反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を与える工程:
c.前記ALD反応器を、不活性ガスを用いてパージする工程;
d.前記ALD反応器に、窒素含有源を与える工程;及び
e.前記ALD反応器を、不活性ガスを用いてパージする工程、
ここで、所望の厚みの前記ケイ素含有膜が得られるまで、工程b〜eを繰り返す。 - 次の工程を含む、プラズマ原子層堆積(PEALD)プロセスを用いて、基材の少なくとも1つの表面にケイ素含有膜を形成するための方法:
a.基材をALD反応器に与える工程;
b.前記ALD反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を与える工程:
c.前記ALD反応器を、不活性ガスでパージする工程;
d.プラズマ窒素含有源を、前記ALD反応器に与える工程;及び
e.前記ALD反応器を、不活性ガスでパージする工程、
又は上記反応器を排気して反応副生成物を除去する工程;
ここで、所望の厚みの前記ケイ素含有膜が得られるまで、工程b〜eを繰り返す。 - 前記窒素含有源が、アンモニア、ヒドラジン、モノアルキルヒドラジン、ジアルキルヒドラジン、窒素、窒素/水素、アンモニアプラズマ、窒素プラズマ、窒素/水素プラズマ及びこれらの混合物からなる群より選択される、請求項4〜6のいずれか一項に記載の方法。
- 前記ケイ素含有膜が、窒化ケイ素及び炭窒化ケイ素からなる群より選択される、請求項4〜7のいずれか一項に記載の方法。
- 次の工程を含む、基材に酸化ケイ素膜を形成する方法:
前記基材に前記酸化ケイ素膜を形成するために、気相成長プロセスにおいて、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を、酸素含有源と反応させる工程:
- 前記気相成長が、化学気相成長、低圧化学気相成長、プラズマ化学気相成長、サイクリック化学気相成長、プラズマサイクリック化学気相成長、原子層堆積、及びプラズマ原子層堆積からなる群より選択される少なくとも1つである、請求項9に記載の方法。
- 次の工程を含む、基材に酸化ケイ素膜を形成する方法:
気相成長によって、前記基材に前記酸化ケイ素膜を形成するために、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H 2 基を有する少なくとも1種の有機アミノジシラン前駆体を含む組成物を反応させる工程:
ここで、前記気相成長は、化学気相成長、低圧化学気相成長、プラズマ化学気相成長、サイクリック化学気相成長、プラズマサイクリック化学気相成長、原子層堆積、及びプラズマ原子層堆積からなる群より選択される少なくとも1つである。 - 次の工程を含む、基材に酸化ケイ素膜を形成する方法:
次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を反応器に導入する工程:
前記基材に前記酸化ケイ素膜を与えるために、少なくとも1種の酸素含有源を前記反応器に導入し、前記少なくとも1種の酸素含有源と前記有機アミノジシランとを反応させる工程。 - 次の工程を含む、厚みを有する酸化ケイ素膜を基材に形成する方法:
a.次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
b.前記基材に、前記少なくとも1種の有機アミノジシラン前駆体を化学吸着させる工程;
c.未反応の前記少なくとも1種の有機アミノジシラン前駆体を、パージガスを用いてパージする工程;
d.酸素源を、加熱した前記基材上の前記有機アミノジシラン前駆体に与えて、前記吸着されている少なくとも1種の有機アミノジシラン前駆体と反応させる工程;及び
e.随意に、あらゆる未反応の酸素含有源をパージする工程。 - 前記厚みのフィルムが得られるまで、工程a〜d及び随意の工程eを繰り返す、請求項13に記載の方法。
- 前記反応させる工程を、200℃以下の温度で行う、請求項9〜14のいずれか一項に記載の方法。
- 前記反応させる工程を、100℃以下の温度で行う、請求項15に記載の方法。
- 前記反応させる工程を、50℃以下の温度で行う、請求項16に記載の方法。
- 原子層堆積プロセスである、請求項9〜17のいずれか一項に記載の方法。
- プラズマサイクリック化学気相成長プロセスである、請求項9〜17のいずれか一項に記載の方法。
- 以下の工程を含む、ALD堆積プロセス又はサイクリックCVD堆積プロセスから選択される堆積法を用いて、ケイ素含有膜を形成する方法:
a.基材を反応器に配置し、これを約25℃から約700℃の範囲の1以上の温度に加熱する工程;
b.次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.未反応の前記少なくとも1種の有機アミノジシラン前駆体を、パージガスを用いてパージする工程;
d.随意に、還元剤を前記反応器に与えて、前記少なくとも1種の有機アミノジシラン前駆体と少なくとも部分的に反応させる工程;
e.随意に、あらゆる未反応の還元剤をパージする工程、
ここで、所望の厚みの前記ケイ素含有膜が得られるまで、前記工程b〜c及び随意の工程d及びeを繰り返す。を繰り返す。 - 前記還元剤は、水素、水素プラズマ、及び塩化水素からなる群より選択される少なくとも1種である、請求項20に記載の方法。
- 以下の工程を含む、原子層堆積、サイクリック化学気相成長、及び化学気相成長から選択される堆積プロセスを用いて、シリコン膜を堆積する方法:
a.反応器に基材を与える工程;
b.前記反応器に、次の式Iによって表されるSi−N結合、Si−Si結合、及びSi−H2基を有する少なくとも1種の有機アミノジシラン前駆体を導入する工程:
c.随意に、パージガスを用いて前記反応器をパージする、又は前記反応器を排気する工程、
ここで、所望の厚みの前記シリコン膜が得られるまで、工程b〜cを繰り返す。
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