JP2013546196A - ピンアタッチメント - Google Patents
ピンアタッチメント Download PDFInfo
- Publication number
- JP2013546196A JP2013546196A JP2013544457A JP2013544457A JP2013546196A JP 2013546196 A JP2013546196 A JP 2013546196A JP 2013544457 A JP2013544457 A JP 2013544457A JP 2013544457 A JP2013544457 A JP 2013544457A JP 2013546196 A JP2013546196 A JP 2013546196A
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- JP
- Japan
- Prior art keywords
- microelectronic
- metal
- conductive
- region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 219
- 238000004377 microelectronic Methods 0.000 claims abstract description 204
- 239000002184 metal Substances 0.000 claims abstract description 202
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims description 61
- 239000008393 encapsulating agent Substances 0.000 claims description 49
- 229910000679 solder Inorganic materials 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 3
- 238000005304 joining Methods 0.000 claims 2
- 239000002887 superconductor Substances 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000004873 anchoring Methods 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
【選択図】図1
Description
本出願は、2010年12月13日に出願された「Pin Attachment」と題する発明の名称の特許出願第12/966,225号の利益を主張し、その特許出願の開示は引用することにより本明細書の一部をなすものとする。
Claims (48)
- 第1の領域及び第2の領域を有する基板であって、該基板は第1の表面と該第1の表面から離れた第2の表面とを有する、基板と、
前記第1の表面上の前記第1の領域の上に重なる少なくとも1つの超小型電子素子と、
前記第2の領域内の前記基板の前記第1の表面及び前記第2の表面のうちの一方において露出している第1の導電性素子であって、該第1の導電性素子のうちの少なくとも幾つかは前記少なくとも1つの超小型電子素子に電気的に接続されている、第1の導電性素子と、
前記第1の導電性素子の上に重なり、かつ該第1の導電性素子から離れた端面を有する実質的に剛性の金属素子と、
前記金属素子を前記第1の導電性素子と接合するボンドメタルと、
前記基板の少なくとも前記第2の領域の上に重なり、かつ該基板から離れた表面を有する成形された誘電体層であって、前記金属素子の前記端面は該成形された誘電体層の前記表面において少なくとも部分的に露出している、成形された誘電体層と、
を備える、超小型電子パッケージ。 - 前記第1の導電性素子のうちの少なくとも幾つかは前記第2の領域内の前記基板の前記第2の表面において露出し、前記成形された誘電体層は少なくとも前記第2の表面の上に重なる、請求項1に記載の超小型電子パッケージ。
- 前記第1の導電性素子は前記第2の領域内の前記基板の前記第1の表面において露出し、前記成形された誘電体層は少なくとも前記第1の表面の上に重なる、請求項1に記載の超小型電子パッケージ。
- 前記基板の前記第2の表面において露出し、かつ前記第1の導電性素子のうちの少なくとも幾つかに電気的に接続された第2の導電性素子を更に備える、請求項3に記載の超小型電子パッケージ。
- 前記金属素子のうちの第1の金属素子は第1の信号電位を保持するように構成され、前記金属素子のうちの第2の金属素子は同時に第2の電位を保持するように構成され、該第2の電位は前記第1の信号電位と異なる、請求項1に記載の超小型電子パッケージ。
- 前記成形された誘電体層は前記超小型電子素子の上に重なる、請求項1に記載の超小型電子パッケージ。
- 前記成形された誘電体層は前記第1の領域の上の第1の高さ及び前記第2の領域の上の第2の高さを有し、前記第1の高さは前記第2の高さと異なる、請求項1に記載の超小型電子パッケージ。
- 前記第1の高さは前記第2の高さよりも大きい、請求項7に記載の超小型電子パッケージ。
- 前記金属素子の前記端面は前記成形された誘電体層の前記表面と同一平面である、請求項1に記載の超小型電子パッケージ。
- 前記成形された誘電体層の前記表面において露出し、かつ前記金属素子に電気的に接続された導電性パッドを更に備える、請求項9に記載の超小型電子パッケージ。
- 前記金属素子の前記端面は、前記基板の前記第1の表面と前記成形された誘電体層の前記表面との間に位置決めされ、前記成形された誘電体層は内部に形成された孔を有し、該孔は前記外面から延在して前記金属素子の前記端面を露出させる、請求項1に記載の超小型電子パッケージ。
- 前記成形された誘電体層は前記基板の少なくとも前記第2の領域の上に重なる主面を有し、前記金属素子の前記端面は前記主面の上に突出する、請求項1に記載の超小型電子パッケージ。
- 前記金属素子は前記第1の導電性素子に向かう方向において、前記端面における、より大きな幅からテーパリングする、請求項1に記載の超小型電子パッケージ。
- 前記金属素子は軸の回りの回転面を有する、請求項13に記載の超小型電子パッケージ。
- 前記金属素子は形状が円筒形である、請求項1に記載の超小型電子パッケージ。
- 前記金属素子は、前記ボンドメタルに隣接したベース領域と、前記端部に隣接した先端領域と、を含み、前記剛性の金属素子のそれぞれは軸及び外周面を有し、該外周面は前記軸に沿って垂直方向に前記軸に向かって又は該軸から離れるように傾斜し、前記外周壁の前記傾斜が前記先端領域と前記ベース領域との間の境界において急に変化するようになっている、請求項1に記載の超小型電子パッケージ。
- 前記金属素子は本質的に、銅、ニッケル、金、及びそれらの任意の組み合わせからなる群から選択される材料からなる、請求項1に記載の超小型電子パッケージ。
- 前記ボンドメタルは300℃未満の融解温度を有する、請求項17に記載の超小型電子パッケージ。
- 前記金属素子の高さは、前記基板の少なくとも前記第2の領域の上に重なる前記成形された誘電体層の厚みの少なくとも60%を通って延在する、請求項1に記載の超小型電子パッケージ。
- 前記ボンドメタルの高さは、前記基板の少なくとも前記第2の領域の上に重なる前記成形された誘電体層の厚みの少なくとも60%を通って延在する、請求項1に記載の超小型電子パッケージ。
- 前記金属素子はパッドである、請求項20に記載の超小型電子パッケージ。
- 前記成形された誘電体層の前記外面上に配置された第2の基板と、該第2の基板の表面において露出し、かつ前記金属素子の前記端面に電気的に接続された第2の導電性パッドと、を更に備える、請求項1に記載の超小型電子パッケージ。
- 請求項1に記載の第1の超小型電子パッケージと、
その表面において露出している複数の接続素子を有する外面と、該接続素子に電気的に接続された超小型電子素子と、を備える第2の超小型電子パッケージと、
を備え、
前記第2の超小型電子パッケージの前記外面の少なくとも一部分が前記成形された誘電体層の前記表面の少なくとも一部分の上に重なり、前記第2の超小型電子パッケージの前記接続素子は、前記第1の超小型電子パッケージの前記導電性突起の前記端面に電気的にかつ機械的に接続される、超小型電子アセンブリ。 - 第1の表面と、該第1の表面から離れた第2の表面と、を有する基板と、
前記第2の表面の上に重なる超小型電子素子と、
前記第2の領域内の前記基板の前記第1の表面において露出している第1の導電性パッドであって、該第1の導電性パッドのうちの少なくとも幾つかは前記超小型電子素子に電気的に接続されている、第1の導電性パッドと、
前記第1の導電性素子の上に重なり、かつ該第1の導電性素子から離れた端面を有する実質的に剛性の金属素子と、
前記金属素子を前記第1の導電性素子と接合するボンドメタルと、
前記第1の表面の少なくとも前記第2の領域の上に重なる誘電体封入材層であって、前記第1の導電性突起及び前記第2の導電性突起は、前記第2の領域から離れた端面を有し、前記誘電体封入材層の表面において少なくとも部分的に露出している、誘電体封入材層と、
を備える、超小型電子パッケージ。 - その上で複数の導電性素子が露出している第1の表面を有する第1の基板と、該基板の該第1の表面から離間した第2の表面を有するキャリアと、該キャリアから延在しかつ前記導電性素子に接合された複数の実質的に剛性の金属素子と、を備える超小型電子アセンブリを配設するステップと、
前記超小型電子アセンブリから前記キャリアを除去するステップであって、それによって前記第1の導電性パッドから離れた前記複数の金属素子のうちのそれぞれの金属素子の接触面を露出させる、前記キャリアを除去するステップと、
を含む、超小型電子パッケージを作製する方法。 - 前記キャリアを除去する前記ステップの前に、前記第1の表面と前記第2の表面との間の、前記導電性突起の回りに誘電体材料を射出するステップであって、それにより成形された誘電体層を形成する、射出するステップを更に含む、請求項25に記載の方法。
- 前記複数の金属素子のうちのそれぞれはボンドメタルを通じて前記導電性素子のうちのそれぞれの導電性素子に接合される、請求項25に記載の方法。
- 前記キャリアを除去する前記ステップは、前記キャリアのエッチング、ラッピング、又はピーリングのうちの少なくとも1つを含む、請求項25に記載の方法。
- 前記第1の基板及び前記導電性素子を含む第1のサブアセンブリ、並びに前記キャリア及び前記金属素子を含む第2のアセンブリから前記超小型電子サブアセンブリを形成するステップを更に含み、前記金属素子は前記第2の表面から離れた第1の表面において露出し、前記超小型電子アセンブリは、前記金属素子の前記第1の表面を前記第2のサブアセンブリの前記導電性素子に取り付けることによって形成される、請求項25に記載の方法。
- 前記第1の超小型電子アセンブリを形成する前記ステップは、前記導電性突起の前記第1の表面及び前記導電性素子のうちのそれぞれの導電性素子に固定された複数のボンディングメタル塊を形成することによって、前記金属素子の少なくとも前記第1の表面を前記第2のアセンブリの前記導電性パッドに取り付けるステップであって、前記ボンディングメタルの少なくとも一部分が前記第1の表面と前記導電性素子との間に配置されるようにするステップを更に含む、請求項29に記載の方法。
- 前記ボンディングメタル塊は、前記導電性突起及び前記導電性素子からなる群の1つの上にはんだを堆積することによって形成される、請求項30に記載の方法。
- 前記超小型電子アセンブリは、前記基板上に固定されかつ前記導電性素子のうちの少なくとも幾つかに電子的に接続された超小型電子素子を更に備える、請求項25に記載の方法。
- 前記超小型電子素子は、前記キャリアを除去する前記ステップの前に実行される、該超小型電子素子を前記第1の基板上に固定するステップによって前記超小型電子アセンブリに含められる、請求項32に記載の方法。
- 前記第1の基板の前記第1の表面は第1の領域及び第2の領域を含み、前記導電性素子は前記第1の領域内の前記第1の表面において露出し、前記超小型電子素子は前記第2の領域内の前記第1の表面上に取り付けられ、該方法は、前記第1の表面の前記第1の領域及び前記第2の領域並びに前記超小型電子素子の少なくとも一部分の上に誘電体層を成形するステップを更に含み、該成形された誘電体層は外面を含み、前記金属素子の前記接触面は前記成形された誘電体層の前記外面において露出している、請求項32に記載の方法。
- 超小型電子素子を前記第1の基板に固定するとともに、前記キャリアを除去する前記ステップの後に前記導電性素子のうちの少なくとも幾つかに前記超小型電子素子を電子的に接続するステップを更に含む、請求項25に記載の方法。
- 前記第1の基板の前記第1の表面は第1の領域及び第2の領域を含み、前記導電性素子は前記第1の領域内の前記第1の表面において露出し、前記超小型電子素子は前記第2の領域内の前記第1の表面上に固定され、前記成形された誘電体層は、
前記超小型電子素子を取り付ける前記ステップの前に前記第1の表面の前記第1の領域の上に第1の誘電体層部分を形成するステップと、
前記超小型電子素子を取り付ける前記ステップの後に、前記第1の表面の前記第2の領域の上に第2の誘電体層部分を形成するステップと、
によって前記第1の誘電体層部分及び前記第2の誘電体層部分内に形成される、請求項35に記載の方法。 - 前記第2のサブアセンブリは、前記金属素子を前記キャリアの前記第2の表面上に形成する前記ステップを含む方法によって形成される、請求項29に記載の方法。
- 前記金属素子を形成する前記ステップは、キャリア上の金属層を選択的にエッチングするステップであって、前記金属層の前記選択された部分が前記金属素子を形成するようにする、エッチングするステップを含む、請求項37に記載の方法。
- 前記第1のサブアセンブリは、剛性の金属層を前記第2の表面に固定するステップと、前記剛性の金属層の選択された部分に沿ってボンディングメタル塊を堆積するステップであって、第1の表面が前記ボンディングメタル塊上に画定されるようにする、堆積するステップと、前記剛性の金属層のエリアの前記選択された部分の外側の該剛性の金属層のエリアを除去するステップと、を含めて形成される、請求項37に記載の方法。
- 前記第1のサブアセンブリを形成する前記ステップは、前記剛性の金属層の上にマスク層を堆積するステップを更に含み、前記マスク層は該マスク層を貫通して前記金属層の前記選択された部分を露出させる複数の開口部を有し、前記ボンディングメタル塊を堆積する前記ステップは、前記開口部内に前記塊を堆積するステップを含む、請求項39に記載の方法。
- 前記マスク層を除去するステップを更に含む、請求項40に記載の方法。
- 前記マスク層は、前記導電性突起を移す前記ステップの後に封入材層の少なくとも一部分として機能する、請求項40に記載の方法。
- 前記導電性突起を取り付ける前記ステップは、前記ボンディングメタル塊を加熱するステップを含む、請求項39に記載の方法。
- 前記超小型電子アセンブリは、
前記導電性素子上に複数のボンディングメタル塊を堆積するステップと、
前記複数の塊に構造体を固定するステップであって、該構造体は前記キャリア及び剛性の金属層を含み、前記複数の塊が前記第1の導電性突起を形成する前記剛性の金属層の選択されたエリアにおいて露出するようにする、固定するステップと、
によって形成される、請求項25に記載の方法。 - 前記選択されたエリアの外側の前記剛性の金属層を除去するステップを更に含む、請求項44に記載の方法。
- 第1の超小型電子サブアセンブリ内に含まれる剛性の金属素子の第1の表面を、第2の超小型電子サブアセンブリの第1の表面において露出しているそれぞれの導電性素子と位置合わせするステップであって、前記第1の超小型電子サブアセンブリは、第1の基板と、その第2の表面において前記基板に取り外し可能に固定された複数の前記金属素子と、を備え、前記第1の表面は前記第2の表面から離れている、位置合わせするステップと、
前記金属素子の前記第1の表面を前記第2の超小型電子サブアセンブリの前記導電性素子に取り付け、前記第1の基板から前記導電性突起を切り離すことによって前記金属素子を前記第2の超小型電子サブアセンブリに移すステップであって、それによって前記導電性パッドから離れた前記導電性突起上の前記第2の超小型電子サブアセンブリの接触面を露出させる、移すステップと、
前記第2の超小型電子サブアセンブリ上に超小型電子素子を取り付けるステップであって、それにより超小型電子アセンブリを形成し、前記超小型電子素子を前記導電性パッドに電子的に接続する、取り付けるステップと、
を含む、超小型電子アセンブリを作製する方法。 - 請求項1又は26に記載の超小型電子アセンブリと、該超小型電子アセンブリに電気的に接続された1つ又は複数の他の電子コンポーネントと、を備えるシステム。
- ハウジングを更に備え、前記超小型電子アセンブリ及び前記他の電子コンポーネントは前記ハウジングに実装されている、請求項47に記載のシステム。
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CN103354949A (zh) | 2013-10-16 |
CN103354949B (zh) | 2016-08-10 |
WO2012082168A1 (en) | 2012-06-21 |
JP5687770B2 (ja) | 2015-03-18 |
US20150011052A1 (en) | 2015-01-08 |
KR20130127995A (ko) | 2013-11-25 |
US20120146206A1 (en) | 2012-06-14 |
KR101519458B1 (ko) | 2015-05-12 |
US9324681B2 (en) | 2016-04-26 |
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