JP2013535114A5 - - Google Patents

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JP2013535114A5
JP2013535114A5 JP2013516658A JP2013516658A JP2013535114A5 JP 2013535114 A5 JP2013535114 A5 JP 2013535114A5 JP 2013516658 A JP2013516658 A JP 2013516658A JP 2013516658 A JP2013516658 A JP 2013516658A JP 2013535114 A5 JP2013535114 A5 JP 2013535114A5
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layer
semiconductor wafer
mask
laser
width
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JP2013535114A (ja
JP5688453B2 (ja
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JP2013516658A 2010-06-22 2011-06-20 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング Active JP5688453B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35746810P 2010-06-22 2010-06-22
US61/357,468 2010-06-22
US13/160,713 2011-06-15
US13/160,713 US8642448B2 (en) 2010-06-22 2011-06-15 Wafer dicing using femtosecond-based laser and plasma etch
PCT/US2011/041126 WO2011163149A2 (en) 2010-06-22 2011-06-20 Wafer dicing using femtosecond-based laser and plasma etch

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JP2014221016A Division JP2015057840A (ja) 2010-06-22 2014-10-30 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング
JP2014257046A Division JP6543461B2 (ja) 2010-06-22 2014-12-19 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング

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JP2013535114A JP2013535114A (ja) 2013-09-09
JP2013535114A5 true JP2013535114A5 (enExample) 2014-12-04
JP5688453B2 JP5688453B2 (ja) 2015-03-25

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JP2013516658A Active JP5688453B2 (ja) 2010-06-22 2011-06-20 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング
JP2014221016A Pending JP2015057840A (ja) 2010-06-22 2014-10-30 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング
JP2014257046A Active JP6543461B2 (ja) 2010-06-22 2014-12-19 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング
JP2017092862A Active JP6642937B2 (ja) 2010-06-22 2017-05-09 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング

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JP2014221016A Pending JP2015057840A (ja) 2010-06-22 2014-10-30 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング
JP2014257046A Active JP6543461B2 (ja) 2010-06-22 2014-12-19 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング
JP2017092862A Active JP6642937B2 (ja) 2010-06-22 2017-05-09 フェムト秒レーザ及びプラズマエッチングを用いたウェハダイシング

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US (10) US8642448B2 (enExample)
JP (4) JP5688453B2 (enExample)
KR (7) KR101880973B1 (enExample)
CN (2) CN105428281B (enExample)
TW (3) TWI547987B (enExample)
WO (1) WO2011163149A2 (enExample)

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