TWI331699B - Photolithographic mask and apparatus and wafer photolithography method for the same - Google Patents

Description

1331699 The following is a modification of the page. Description of the Invention: [Technical Field] The present invention relates to a wafer photolithography mask and related wafer lithography method, and more particularly to a multi-special crystal Multi-project wafers (MPW) lithography masks and related wafer lithography methods. [Prior Art] The technology of multi-project wafer fabrication that has been witnessed allows multiple patterns 9 of the project to be placed in the same reticle, so that the cost of the reticle can be shared by the various projects. The pattern of the project referred to here refers to the pattern that needs to be formed on the reticle in order to produce a wafer that can work. However, due to the different length or width of the project pattern in the same line, in order to save the cost of the mask, the floorplan and dicing problems for multi-project wafers are generated. The problem of planar planning is to determine the position of the pattern of the project on the marking board. The problem of cutting is to evaluate the cutting plan before manufacturing the wafer, in order to determine the number of wafers required and each after manufacturing. The dicing line of the wafer. The device of the conventional lithography process is shown in FIG. ,, which is an Mpw reticle 101 placed between a lithography light source 102 and a miniature lens 1 〇 3, and the light emitted by the lithography light source 102 passes through the ^^ After the trade mark board 1〇1 forms a patterned light, the pattern is reduced and irradiated onto the photoresist surface of a wafer 1〇4 through the miniature lens 103. The arrow of the surface of the wafer 04 is the step direction of the exposure. . Although Mpw's reticle 10! cost can be shared by each project, but with Mpw reticle and traditional only include a project pattern of the reticle and even a multiple containing the same special 107235 008976] -5-1331699 pattern Compared with the cost of the reticle, the price is greatly increased. The year is revised. The main reason for the lithography process and the required wafers used in MPW is that it is widely used in cutting. The diamond knife can only allow straight cuts from one end of the wafer to the other end of the wafer. Also because of this limitation, other wafers are often destroyed in order to cut out a certain wafer. And because the demand and output vary from project to project, MPW marking board cannot be selected to manufacture only specific projects during the lithography process.

For wafers, in the case of projects that meet the maximum wafer demand output, some of the production wafers that have already been produced will still be manufactured via MPW marking boards. In all of the above, the MPW manufacturing costs have grown substantially because of the use of some wafers that are useless or can be cut.

After the wafer is actually cut out and tested, if a project is to be mass-produced, it is expensive and inefficient to directly use the MPW's marking board to make the project. When the production demand is so large that the cost of manufacturing the wafer using the Mpw reticle is greater than the cost of making a dedicated reticle for the project plus the cost of manufacturing the wafer with the reticle, it is necessary to make a dedicated reticle for the project. This is also a very considerable cost, and there is still no effective solution. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a wafer photolithography mask and associated wafer lithography method to reduce the cost of wafer lithography. To achieve the above object, the present invention discloses a mask comprising a light shielding layer and at least one light permeable region. The position and shape of the permeable region must be such that the project on which the wafer is to be fabricated on the MP W reticle is exposed to the wafer table Y23663 107235 008976 m·! Replacing the replacement page photoresist layer, and causing the pattern of the project on the reticle to be completely transferred to the photoresist layer on the surface of the wafer. The mask can be disposed on the Mpw reticle to The light travel route between the lithography light sources may also be disposed on the light travel route between the MPW reticle and the wafer. The wafer lithography method of the present invention comprises the steps of: arranging an MPW's line exposure ^ (the area of the mask|the -Mpw reticle to the ray path between the ray light sources, or configuring one Masking the ray path between the Mpw reticle and the wafer. (2) moving a wafer to the position to be exposed, opening a shutter for exposure, and permeable through the mask The light region selects a lithographic light source to project a distribution range, so that the project pattern on the MPW reticle to be fabricated is transferred to the wafer to which a photoresist is applied. After a period of exposure, the shutter is turned off. (3) Move the wafer to the next unexposed position, open the shutter for exposure. (4) When all the areas to be exposed on the wafer are exposed, the photoresist development can be performed to remove the exposed portion. The photoresist is then engraved on the area of the developed laa circle that is not covered by the photoresist, and finally the photoresist layer on the wafer is removed. The wafer lithography method provided by the present invention can avoid manufacturing. Some not on the MPW marking board The pattern is created, thus reducing the waste of the wafer and lithography process, and when a small number of projects on the MPW marking board require a large number of wafers to be produced, 'the pattern of the existing project on the MPW marking board can still be utilized, plus Selecting the mask of the lithography light source to project the distribution range to select the wafer to be manufactured. [Embodiment] FIGS. 2(a) to 2(d) show the application of the multi-project wafer fabrication Y25663 • 7-1331699% in the embodiment of the present invention. The manufacturing process of the lithography mask of the replacement page is corrected on the next day of April. • As shown in Fig. 2(a), a transparent substrate 201, such as a glass plate (for wave. The length of 436 nm g-line, is provided first). H-line with a wavelength of 405 nm and i-line with a wavelength of 365 nm) or fused silica (for deep ultraviolet (DUV) with a wavelength of 248 nm or 193 nm) .

As shown in Fig. 2(b), a light-shielding layer 203 of a chromium film is formed on the transparent substrate 201. The light shielding layer 203 has a thickness of about 100 to 120 nm. Further, a chromium oxide (e.g., chromium dioxide) having a thickness of about 20 nm (not shown) may be formed on the light shielding layer 203 to reduce the reflection of the metal chromium film upon exposure. As shown in FIG. 2(c), an appropriate photoresist layer 204 is spin-coated on the light shielding layer 203. And an electron beam is projected on the predetermined light-transmitting region of the photoresist layer 204. Thereafter, a portion of the photoresist layer 204 irradiated with the electron beam is removed to form a light shielding layer 203 which is not protected by the photoresist layer 204. The photoresist layer 204 may be a poly-butene sulfone or a chemical amplification photoresist. Thereafter, the light shielding layer 203 not protected by the photoresist layer 204 is etched, and the exposed light shielding layer 203 is removed to expose the transparent substrate 201 below it, thereby forming the light transmissive region 206. Then, the photoresist layer 204 is removed, so that the light shielding layer 203 originally covered by the photoresist layer 204 is reproduced, thus forming a mask 20 as an exposure imaging area for selecting the MPW reticle, as shown in FIG. 2(d). . 2(e) to 2(h) show another manufacturing process of the wafer lithography mask of the present invention. As shown in FIG. 2(e), a transparent substrate 207 is first provided, and some transparent substrates 207 are placed thereon. Blocking the sputtering element 209 to avoid hiding Y23663 107235 0089^111-1

The second substrate penetrates into the underlying transparent substrate 207, as shown in FIG. 2(f). The resistive sputtering element 209 can be the same material as the transparent substrate 207. The area covered by the resistive sputtering element 209 is used for future A light transmissive region is formed. As shown in Fig. 2(g), a light-shielding material such as chrome is sputtered onto the transparent substrate 207 to form a light-shielding layer 210. The light shielding layer 210 has a thickness of about 100 to 120 nm. Further, a chromium oxide (e.g., chromium dioxide) having a thickness of about 20 nm (not shown) may be formed on the light shielding layer 21 to reduce the reflection of the metal chromium film upon exposure. The resistive slick element 209 covering the opaque layer 210 is then removed to expose the transparent substrate 207' thereby forming the permeable region 211. Thus, the mask 22 is formed as an exposure imaging area for selecting the MPW reticle, and as shown in FIG. 2(h), FIGS. 2(i) to 2(j) show another manufacturing of the wafer lithography mask of the present invention. Process. As shown in Fig. 2(1), an opaque light-shielding substrate 212 such as a slab or other chrome-plated opaque opaque plate is first provided. A chromium oxide (e.g., chromium dioxide) having a thickness of about 20 nm (not shown) may be formed on the surface to reduce the reflection of the metallic chromium film upon exposure. Then, the region to be light-transmissive is cut out on the opaque light-shielding substrate 212, i.e., dead > into the permeable region 214. Cutting methods can be utilized such as laser cutting. Finally, the contamination generated by the cutting is removed, so that the mask 24 is formed as the selective imaging area of the rose screen, as shown in Fig. 2 (1). The mask is applied to form a permeable region in the light shielding layer of the mask according to the pattern to be fabricated on the MPW marking board, so that light can pass through the permeable region of the light shielding layer to reach the surface of the wafer. The barrier layer is used to achieve exposure. 1331699 //The annual replacement page is used to protect the mask surface with a thin and optically transparent film (pellicie) after the mask is used to select the exposed image area of the MPW reticle. Loss of dye. The film is typically prepared from esterified or nitrated fibers having a high transmission (about %), such as Cellul〇se Acetate (CA),

Nitr〇-Cellul〇se (NC). If dust particles fall on the film it will be away from the focus plane and will not appear on the wafer during exposure. Fig. 3 (a) illustrates a lithography apparatus according to an embodiment of the present invention. The Mpw reticle 301 has been fabricated with a fine alignment mark in the cut line space reserved for some of the project patterns, as shown by the fine alignment mark 3〇3m fine alignment mark 304m. The fine alignment marks are used to align the pattern to be formed with the pattern already formed on the wafer to prevent the pattern of the artwork to be fabricated from being finely aligned. First, referring to the planar plan of the MPW reticle 301, the project pattern of the wafer to be manufactured is selected for exposure, that is, an exposure plan (eXp〇sure plan) is selected. In this embodiment, the pattern 3 03 of the project and the pattern 3 04 of the project are selected for exposure. The pattern of the project 3 03 and the pattern of the project 3 04 are equal in length and the initial reference is 303h and 304h on the adjacent sides. The coordinates are equal in the gamma direction and the cutting lines 309 and 310 are shared. The mask 302 that selects the MPW reticle 301 to expose the imaged area is located on the ray travel path between the MPW reticle 301 and the lithography light source 317. When manufacturing the mask 302 in which the selected MPW reticle 301 is exposed to the imaged area, the permeable area 330 must be capable of at least illuminating the pattern 303 and 304 of the illuminating light source 3 丨 7 for exposure. The dotted line on the surface of the marking plate 301 is only a virtual cutting line (cutting lines 309, 3 10) representing the possible tangential line when cutting the wafer. Y23663 107235 008976m·! • 10-1331699 1/year Η 日 修改 Correct the replacement page position. The permeable region 314 and the permeable region 315 are permeable regions for alignment. The function is to enable the reticle alignment marks on the reticle to pass through the alignment permeable region to complete the stepping Alignment of the machine with the reticle. Then, 'the stepper is used to move the wafer 319 to the position to be exposed.' After the alignment system completes the alignment, the closed shutter (not shown) is turned on, so that the lithography light source 3 1 7 Light is imaged on the photoresist layer 320 of the wafer 319 via the mask 302, the MPW reticle 301, and the miniature lens 318. After a period of exposure, the shutter is turned off and the wafer 319 is moved to the next position to be exposed for exposure until all of the exposed positions are exposed. The stepping method of the exposure on the wafer 319 in FIG. 3(a) is only a stepping method, and other stepping modes can also be selected, the emphasis is on effectively utilizing the exposed area of the wafer to produce more wafers. . The commonly used steppers are divided into stepper and repeater alignment machines and stepper and scanning systems. This embodiment takes the former as an example and can also be implemented by the latter. If the latter is used, the scanning only needs to be performed on the permeable region 330 of the mask 3 〇 2 including at least the selected imaging region of the MPW reticle, and it is not necessary for the entire ^]|| Scan. In addition, the commonly used lithography light source 317 uses a Mercury Arc Lamp to generate an exposure light such as g_line of 436 nm, h-line of 405 nm, and i-nne of 365 nm. A 248 nm KrF laser, a 193 nm ArF laser and a 157 nm F2 laser were used for the laser. Then, the photoresist layer 320 of the exposed wafer 319 is developed to remove the photoresist at the exposed portion. "Basically, the photoresist development is performed by using a kind of Y23663 107235 〇〇 897^ιιι·ι -11- 1331699 游心] 丨 7th correction replacement page developer, so as to dissolve the photoresist at the exposed place. • Then, the region of the developed wafer 319 that is not covered by the photoresist layer 320 is subjected to a surname. The method of engraving can be dry name, wet money or a mixture of the two. Finally, removal of the photoresist layer 320 on the wafer 319, a so-called photoresist removal step, is performed to remove the photoresist layer that has been rendered useless. There are two main ways to remove the photoresist, one is wet stripping & the other is dry stripping. The wet stripping method is to destroy the photoresist by the structural apparatus I using an organic solution or an inorganic solution. The dry stripping method removes the photoresist by means of plasma. In general, dry and wet types are used in combination to thoroughly remove the photoresist layer and avoid leaving material remaining in the plasma reaction. Fig. 3(b) shows a lithography process apparatus according to another embodiment of the present invention. Among them, the MPW marking board 301 has been prepared with fine alignment marks in the cutting line space reserved for some project patterns, such as the fine alignment mark 3〇3m and the fine alignment mark 305m. The fine alignment mark is used for alignment between the pattern to be exposed and the pattern formed on the crystal circle, so that the pattern piano of the project to be manufactured cannot be finely aligned. First, referring to the planar plan of the MPW marking board 301 of FIG. 3(b), the pattern is selected for exposure. Here, the pattern 303 of the project and the pattern 305 of the project are selected to expose the pattern 303 of the project and the pattern of the project 3 05. It is placed diagonally adjacent to each other, and one side 303w of the pattern 303 of the project and one side 305w of the pattern 305 of the project are equal in length, and the mask 333 of the selected image line of the selected MPW marking board is shared by the cutting lines 309 and 310» On the light travel route between the MPW marking board 301 and the wafer 319, when the replacement page mask 333 is modified in the system of 107235 008976] -12- 1331699, the light transmission (four) 331 and 332 must be capable of at least Select the pattern 3〇3 of the project on the Mpw marking plate 3〇1 and the pattern milk of the project for exposure. In this embodiment, the shape and position of the mask 333 that selects the MPW reticle to expose the imaged area need not affect the operation of the alignment system for the Mpw reticle.

Then, the stepper is used to move the wafer to the position to be exposed. After the alignment system completes the alignment, the closed shutter (not shown) is turned on, so that the light of the lithography light source 317 passes through the MPW marking board. 3, 1, mask 333 and miniature lens 318 are post-exposure imaged on photoresist layer 32 of wafer 319. After a period of exposure, the shutter is turned off; and the wafer 319 is moved to the next position to be exposed by the stepper for exposure until all of the exposed positions are exposed. (b) The exposure shown may also be selected in other stepping modes. If the stepping and scanning system is used, the scanning only needs to be in the permeable region 331 of the mask 333 including at least the selected imaging area of the MPW reticle. can

It is only necessary to perform the light-transmitting region 332, and it is not necessary to scan the entire MPW marking plate 301. According to the above embodiment, when the wafer is manufactured, each wafer can be completely cut out, and no wafer can be cut by cutting other wafers. Furthermore, because only the wafers to be manufactured are manufactured, the waste of wafer and lithography processes can be greatly reduced. The present invention also allows the patterns 303, 305, and 306 of the project in Fig. 3(b) to be simultaneously exposed. After the wafer is manufactured, although the wafers formed in the same exposure region in the pattern 306 are cut along the Y-axis. The line will be cut to the Y23663 107235 ΟΟ8976111-1 -13- 1331699 foot of the project. You can modify the wafer made by the Wei page pattern 303 on the I-day, and choose to cut out the wafer made with the pattern of the project 3〇3. The wafer made of 306 is also not packaged for normal use. However, wafers made with a special pattern of 3〇3 on different wafers on the same wafer and wafers made with a pattern 306 of the project pattern still have the opportunity to be cut in the same wafer, thus sharing the lithography process. cost of. And because only the wafers to be fabricated are manufactured, the cost of wafer and lithography processes can be greatly reduced.

The technical contents and technical features of the present invention have been disclosed as above, but those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a conventional lithography apparatus; FIGS. 2(a) to 2(d) show a manufacturing process of a lithography mask applied to a multi-project wafer fabrication according to an embodiment of the present invention;

2(e) to 2(h) show a manufacturing flow of a lithography mask applied to a multi-project wafer manufacturing process according to another embodiment of the present invention; and FIGS. 2(i) to 2(j) show still another embodiment of the present invention. FIG. 3(a) shows a lithography apparatus according to an embodiment of the present invention; and FIG. 3(b) shows a lithography according to another embodiment of the present invention; Device. [Main component symbol description] 1〇1 MPW marking board 102 lithography light source 107235 008976 -14- 1331699

103 Miniature lens 104 Wafer 201 Transparent substrate 203 Light shielding layer 204 Photoresist layer 206 Light transmissive region 207 Transparent substrate 209 Blocking tantalum element 210 Light shielding layer 211 Light transmissive region 212 Light shielding substrate 214 Light transmissive region 20, 22, 24 Mask 301 MPW marking board 302 mask 303 > 304, 305, 306 project pattern 303m '304m ' 305m fine alignment mark 303h, 304h long side 303w, 305w short side 309 '310 cutting line 314, 315 ' 330 , 331 , 332 permeable area 311 ' 312 reticle alignment mark 317 lithography light source 318 miniature lens 319 wafer 320 photoresist layer 333 mask year of the sun correction replacement 茛 15-

Claims (1)

1331699 i » 1 "No. 095109138 Patent Application Patent Application Patent Renewal (June 99) 丨丨·Japanese Amendment I, X. Patent Application Van Τ 曰 0 曰 round micro shadow mask, with one containing A multi-project wafer pattern (MPW) reticle is disposed on a ray travel path between a lithography light source and a wafer, which includes: a light shielding layer, and a plurality of permeable regions; wherein the permeable region The position and shape of the multi-item wafer pattern on the marking plate can be transferred to the photoresist layer on the surface of a wafer by a single exposure process. 2. The wafer lithography mask according to the item 1 is provided. a ray path between the reticle and the lithography source. 3. A wafer lithography mask according to the request item, which is disposed between the reticle and the wafer. 4. The wafer lithography mask of claim 1 further comprising at least one alignment permeable region ′ such that the reticle alignment mark on the reticle is permeable to the alignment permeable region And complete the alignment of the stepper with the reticle. 5. A crystal The circular lithography method comprises the steps of: setting a mask and a reticle comprising a multi-project wafer pattern (MPW) on a ray path between a lithography source and a wafer, the mask comprising a shading a layer and a plurality of permeable regions; and the light of the lithographic light source is exposed to the wafer through the permeable region by a single exposure process, and the multi-tasking wafer pattern of the reticle is transferred to the wafer The wafer lithography method according to claim 5, wherein the mask is disposed on a ray travel route between the reticle and the lithography light source. -16 - 1331699 7. Upon request The crystal ai lithography method of item 5, wherein the ray path between the opaque plate and the wafer is on the route. The lithography method according to claim 5, wherein the pair of masks is Applicable permeable region 9. The wafer lithography method according to item 8, wherein the aligning region for aligning is achieved by making the reticle alignment mark on the reticle progressively advanced Alignment with the reticle. 10. The wafer lithography method of claim 5, wherein the pattern to be transferred on the reticle comprises at least one fine alignment mark. 11. The wafer lithography method of claim 1, wherein the fine alignment mark is used for alignment between an image to be exposed and a pattern formed on the wafer. 12. A wafer lithography apparatus for exposing a wafer, comprising: a shadow source; a reticle including a multi-site wafer pattern (MPW): and a wafer lithography mask comprising: a light shielding layer, and a plurality of light transmissive regions, wherein the position and shape of the light transmissive region allow a multi-tasking wafer pattern on the marking plate to be transferred to the photoresist layer on the surface of the wafer by a single exposure process; The reticle and the wafer lithography mask are disposed on a ray path between the lithography light source and the wafer. -17- 1331699 ___ Revised replacement page on the 1st of the month VII. Designated representative map: (1) The representative representative of the case is: (3(a)). (2) A brief description of the symbol of the representative figure: 301 MPW marking board 302 Mask 303, 304, 305, 306 Project pattern 303m '304m Fine alignment mark 303h '304h Long side 309, 310 cutting line ^ 314, 315, 330 permeable area casting shrink lens lens resist layer 311, 312 reticle alignment mark 317 lithography light source 318 319 wafer 320 VIII. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: no) Y23663 107235 008976111-1 -4-