JP6360477B2 - ウェハダイシングのためのレーザ、プラズマエッチング、及び裏面研削プロセス - Google Patents
ウェハダイシングのためのレーザ、プラズマエッチング、及び裏面研削プロセス Download PDFInfo
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- JP6360477B2 JP6360477B2 JP2015521819A JP2015521819A JP6360477B2 JP 6360477 B2 JP6360477 B2 JP 6360477B2 JP 2015521819 A JP2015521819 A JP 2015521819A JP 2015521819 A JP2015521819 A JP 2015521819A JP 6360477 B2 JP6360477 B2 JP 6360477B2
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- 238000001020 plasma etching Methods 0.000 title claims description 18
- 238000000227 grinding Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title description 81
- 230000008569 process Effects 0.000 title description 50
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000059 patterning Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 75
- 239000010410 layer Substances 0.000 description 52
- 239000004065 semiconductor Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 238000002679 ablation Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000000608 laser ablation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004823 Reactive adhesive Substances 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- WGXGKXTZIQFQFO-CMDGGOBGSA-N ethenyl (e)-3-phenylprop-2-enoate Chemical compound C=COC(=O)\C=C\C1=CC=CC=C1 WGXGKXTZIQFQFO-CMDGGOBGSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/51—Plural diverse manufacturing apparatus including means for metal shaping or assembling
- Y10T29/5124—Plural diverse manufacturing apparatus including means for metal shaping or assembling with means to feed work intermittently from one tool station to another
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Description
本発明の実施形態は、半導体処理の分野に関し、特に、各ウェハが複数の集積回路を上に有する半導体ウェハをダイシングする方法に関する。
半導体ウェハ処理では、集積回路は、シリコン又は他の半導体材料からなるウェハ(基板ともいう)上に形成されている。一般に、半導体、導電体又は絶縁体のいずれかである様々な材料の層が、集積回路を形成するために利用される。これらの材料は、様々な周知のプロセスを用いてドープされ、堆積(蒸着)され、エッチングされ、これによって集積回路を形成する。各ウェハは、ダイとして知られる集積回路を含む多数の個々の領域を形成するように処理される。
Claims (5)
- 複数の集積回路(IC)を含む基板をダイシングするためのシステムであって、
IC間の基板の領域を露出させるトレンチを形成するために基板の上方に配置された多層マスクをパターニングするためのレーザスクライブモジュールと、
レーザスクライブモジュールと結合され、複数のロードロックを有するファクトリーインターフェースと、
ファクトリーインターフェースを介してレーザスクライブモジュールに結合されたクラスタツールであって、
レーザスクライブされた基板の真空内搬送用ロボットアームを収容するロボット搬送チャンバと、
回転可能なチャックを備え、水溶液源に流体結合されたマスク形成のためのスピンコーティングモジュールと、
加圧スプレージェットを含むウェットステーションと、
基板を部分的に通るトレンチを前進させるために基板をプラズマエッチングするための、ロボット搬送チャンバに結合されたプラズマエッチングモジュールとを含むクラスタツールと、
エッチングされたトレンチに到達するように基板の裏面研削を実行するための裏面研削モジュールとを含むシステム。 - レーザスクライブモジュールは、540ナノメートル以下の波長と400フェムト秒以下のパルス幅を有するフェムト秒レーザを含む請求項1記載のシステム。
- プラズマエッチングモジュールは、SF6と、C4F8及びC4F6のうちの少なくとも1つを使用する請求項1記載のシステム。
- レーザスクライブモジュールは、プラズマエッチングの後、裏面研削の前に、更にマスクを除去するためのものである請求項1記載のシステム。
- 裏面研削の前に基板の前面上に保護テープを塗布するためのテープアプリケータを含む請求項1記載のシステム。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261671617P | 2012-07-13 | 2012-07-13 | |
US61/671,617 | 2012-07-13 | ||
US201361790976P | 2013-03-15 | 2013-03-15 | |
US61/790,976 | 2013-03-15 | ||
US13/938,537 US8845854B2 (en) | 2012-07-13 | 2013-07-10 | Laser, plasma etch, and backside grind process for wafer dicing |
US13/938,537 | 2013-07-10 | ||
PCT/US2013/050123 WO2014011914A1 (en) | 2012-07-13 | 2013-07-11 | Laser, plasma etch, and backside grind process for wafer dicing |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015528212A JP2015528212A (ja) | 2015-09-24 |
JP6360477B2 true JP6360477B2 (ja) | 2018-07-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015521819A Active JP6360477B2 (ja) | 2012-07-13 | 2013-07-11 | ウェハダイシングのためのレーザ、プラズマエッチング、及び裏面研削プロセス |
Country Status (6)
Country | Link |
---|---|
US (2) | US8845854B2 (ja) |
JP (1) | JP6360477B2 (ja) |
KR (1) | KR102157242B1 (ja) |
CN (1) | CN104412367A (ja) |
TW (1) | TW201409557A (ja) |
WO (1) | WO2014011914A1 (ja) |
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-
2013
- 2013-07-10 US US13/938,537 patent/US8845854B2/en active Active
- 2013-07-11 WO PCT/US2013/050123 patent/WO2014011914A1/en active Application Filing
- 2013-07-11 JP JP2015521819A patent/JP6360477B2/ja active Active
- 2013-07-11 KR KR1020157004050A patent/KR102157242B1/ko active IP Right Grant
- 2013-07-11 CN CN201380035111.XA patent/CN104412367A/zh active Pending
- 2013-07-12 TW TW102125091A patent/TW201409557A/zh unknown
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TW201409557A (zh) | 2014-03-01 |
US20140017880A1 (en) | 2014-01-16 |
JP2015528212A (ja) | 2015-09-24 |
KR102157242B1 (ko) | 2020-09-17 |
WO2014011914A1 (en) | 2014-01-16 |
US20140363952A1 (en) | 2014-12-11 |
US8845854B2 (en) | 2014-09-30 |
KR20150032582A (ko) | 2015-03-26 |
CN104412367A (zh) | 2015-03-11 |
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