JP6925714B2 - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP6925714B2 JP6925714B2 JP2017094916A JP2017094916A JP6925714B2 JP 6925714 B2 JP6925714 B2 JP 6925714B2 JP 2017094916 A JP2017094916 A JP 2017094916A JP 2017094916 A JP2017094916 A JP 2017094916A JP 6925714 B2 JP6925714 B2 JP 6925714B2
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- wafer
- protective film
- protective
- protective member
- surface side
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Description
11a 表面
11b 裏面
11c 外周縁
11d デバイス領域
11e 外周余剰領域
13 分割予定ライン(ストリート)
15 デバイス
17 バンプ(凹凸)
21 保護フィルム
23 シート(キャリアシート)
25 液状樹脂
27 保護部材
29 液体
2 保護フィルム密着装置
4 支持テーブル
4a 支持面
4b ガイド部
6 保護フィルム保持ユニット
6a 保持面
6b 第1流路
6c 第2流路
8 バルブ
10 吸引源
12 バルブ
14 圧縮エアー供給源
16 バルブ
18 バルブ
20 ヒーター
22 保護部材固定装置
24 保持テーブル
24a 凹部
24b 吸引路
26 紫外線光源
28 プレート
30 バルブ
32 吸引源
34 ウェーハ保持ユニット
34a 下面
42 研削装置
44 保持テーブル(チャックテーブル)
44a 保持面
46 研削ユニット
48 スピンドル
50 マウント
52 研削ホイール
54 ホイール基台
56 研削砥石
62 ウェーハ保持ユニット
62a 保持面
64 剥離ユニット
66 ヒーター
72 減圧チャンバ
72a 箱体
72b 扉体
72c 開口部
74 排気管
76 バルブ
78 吸気管
80 バルブ
82 支持テーブル
82a 支持面
82b ガイド部
84 ヒーター
86 軸受
88 押圧ユニット
90 緩衝材
102 減圧チャンバ
102a 箱体
102b 扉体
102c 開口部
104 排気管
106 バルブ
108 吸気管
110 バルブ
112 軸受
114 ウェーハ保持ユニット
114a 下面
116 ヒーター
118 剥離ユニット
Claims (8)
- 凹凸のあるデバイスが形成されたデバイス領域と該デバイス領域を囲む外周余剰領域とを表面に有するウェーハの該表面に、接着剤が設けられていない保護フィルムを対面させた状態で、該ウェーハの中心部から径方向外側に向かって順に該保護フィルムを該ウェーハの該表面側に押し当て、該保護フィルムを該凹凸に倣って該表面側に接着することなく密着させる保護フィルム密着ステップと、
外的刺激によって硬化する硬化型の液状樹脂からなる保護部材で該保護フィルムを被覆し、該ウェーハの該表面側が該保護部材で覆われた保護部材付きウェーハを形成する保護部材付きウェーハ形成ステップと、
チャックテーブルの保持面で該保護部材付きウェーハの該保護部材側を保持した状態で、該ウェーハの裏面を研削し、該ウェーハを薄くする研削ステップと、
薄くなった該ウェーハから該保護部材及び該保護フィルムを剥離する剥離ステップと、を備えることを特徴とするウェーハの加工方法。 - 該保護フィルム密着ステップでは、該保護フィルムの該ウェーハに対面する面とは反対側の面に気体を噴射することで該ウェーハの該表面側に該保護フィルムを押し当てることを特徴とする請求項1に記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、加熱された該気体を噴射することを特徴とする請求項2に記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、加熱されて軟化した状態の該保護フィルムを該ウェーハに密着させることを特徴とする請求項1から請求項3のいずれかに記載のウェーハの加工方法。
- 該保護部材付きウェーハ形成ステップでは、平坦なシートに塗布された該液状樹脂に該保護フィルムを介して該ウェーハを押し当てた後、該液状樹脂を外的刺激で硬化させて該ウェーハに該液状樹脂からなる該保護部材を固定することを特徴とする請求項1から請求項4のいずれかに記載のウェーハの加工方法。
- 該保護フィルム密着ステップでは、減圧下で該保護フィルムを該ウェーハの該表面側に押し当てた後、大気圧によって該保護フィルムを該凹凸に倣って密着させることを特徴とする請求項1から請求項5のいずれかに記載のウェーハの加工方法。
- 該保護フィルム密着ステップの前に、該ウェーハの該表面に液体を供給する液体供給ステップを更に備え、
該保護フィルム密着ステップでは、該液体越しに該保護フィルムを該ウェーハの該表面側に押し当てることを特徴とする請求項1から請求項5のいずれかに記載のウェーハの加工方法。 - 該剥離ステップでは、該保護フィルムと該ウェーハの該表面との間に存在する該液体を気化させることを特徴とする請求項7に記載のウェーハの加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017094916A JP6925714B2 (ja) | 2017-05-11 | 2017-05-11 | ウェーハの加工方法 |
TW107112251A TWI788342B (zh) | 2017-05-11 | 2018-04-10 | 晶圓的加工方法 |
SG10201803744QA SG10201803744QA (en) | 2017-05-11 | 2018-05-03 | Wafer processing method |
CN201810430190.9A CN108878341B (zh) | 2017-05-11 | 2018-05-08 | 晶片的加工方法 |
KR1020180053230A KR102445608B1 (ko) | 2017-05-11 | 2018-05-09 | 웨이퍼의 가공 방법 |
DE102018207255.8A DE102018207255A1 (de) | 2017-05-11 | 2018-05-09 | Waferbearbeitungsverfahren |
US15/977,418 US10403490B2 (en) | 2017-05-11 | 2018-05-11 | Wafer processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017094916A JP6925714B2 (ja) | 2017-05-11 | 2017-05-11 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018190937A JP2018190937A (ja) | 2018-11-29 |
JP6925714B2 true JP6925714B2 (ja) | 2021-08-25 |
Family
ID=63962499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017094916A Active JP6925714B2 (ja) | 2017-05-11 | 2017-05-11 | ウェーハの加工方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10403490B2 (ja) |
JP (1) | JP6925714B2 (ja) |
KR (1) | KR102445608B1 (ja) |
CN (1) | CN108878341B (ja) |
DE (1) | DE102018207255A1 (ja) |
SG (1) | SG10201803744QA (ja) |
TW (1) | TWI788342B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108155270B (zh) * | 2017-12-13 | 2019-09-20 | 北京创昱科技有限公司 | 一种薄膜与晶片的分离装置和分离方法 |
JP7071782B2 (ja) * | 2017-12-28 | 2022-05-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP7257199B2 (ja) * | 2019-03-18 | 2023-04-13 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
JP2021012936A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社ディスコ | 光デバイスの移設方法 |
JP7266953B2 (ja) | 2019-08-07 | 2023-05-01 | 株式会社ディスコ | 保護部材形成方法及び保護部材形成装置 |
JP7286250B2 (ja) | 2019-08-07 | 2023-06-05 | 株式会社ディスコ | 保護部材形成装置 |
JP7382171B2 (ja) | 2019-08-09 | 2023-11-16 | 株式会社ディスコ | 樹脂シートの剥離方法 |
JPWO2022190916A1 (ja) * | 2021-03-08 | 2022-09-15 |
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-
2017
- 2017-05-11 JP JP2017094916A patent/JP6925714B2/ja active Active
-
2018
- 2018-04-10 TW TW107112251A patent/TWI788342B/zh active
- 2018-05-03 SG SG10201803744QA patent/SG10201803744QA/en unknown
- 2018-05-08 CN CN201810430190.9A patent/CN108878341B/zh active Active
- 2018-05-09 DE DE102018207255.8A patent/DE102018207255A1/de active Pending
- 2018-05-09 KR KR1020180053230A patent/KR102445608B1/ko active IP Right Grant
- 2018-05-11 US US15/977,418 patent/US10403490B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20180124757A (ko) | 2018-11-21 |
CN108878341A (zh) | 2018-11-23 |
DE102018207255A1 (de) | 2018-11-15 |
SG10201803744QA (en) | 2018-12-28 |
JP2018190937A (ja) | 2018-11-29 |
US10403490B2 (en) | 2019-09-03 |
US20180330938A1 (en) | 2018-11-15 |
TW201901781A (zh) | 2019-01-01 |
TWI788342B (zh) | 2023-01-01 |
KR102445608B1 (ko) | 2022-09-20 |
CN108878341B (zh) | 2024-02-02 |
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