TW202205419A - 薄片以及保護構件之形成方法 - Google Patents
薄片以及保護構件之形成方法 Download PDFInfo
- Publication number
- TW202205419A TW202205419A TW110126122A TW110126122A TW202205419A TW 202205419 A TW202205419 A TW 202205419A TW 110126122 A TW110126122 A TW 110126122A TW 110126122 A TW110126122 A TW 110126122A TW 202205419 A TW202205419 A TW 202205419A
- Authority
- TW
- Taiwan
- Prior art keywords
- sheet
- workpiece
- layer
- resin
- protective member
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 10
- 229920005989 resin Polymers 0.000 claims abstract description 112
- 239000011347 resin Substances 0.000 claims abstract description 112
- 230000001681 protective effect Effects 0.000 claims abstract description 69
- 239000007788 liquid Substances 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 14
- -1 polyethylene terephthalate Polymers 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004962 Polyamide-imide Substances 0.000 claims 1
- 229920002312 polyamide-imide Polymers 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 53
- 239000002313 adhesive film Substances 0.000 description 13
- 238000004891 communication Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C1/00—Apparatus in which liquid or other fluent material is applied to the surface of the work by contact with a member carrying the liquid or other fluent material, e.g. a porous member loaded with a liquid to be applied as a coating
- B05C1/02—Apparatus in which liquid or other fluent material is applied to the surface of the work by contact with a member carrying the liquid or other fluent material, e.g. a porous member loaded with a liquid to be applied as a coating for applying liquid or other fluent material to separate articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/14—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
[課題]提供一種在形成保護晶圓的一側的面之保護構件時所使用之薄片,其可容易地從工作台的載置面分離,且由已硬化的樹脂而成之保護構件不會從薄片及晶圓剝離。[解決手段]一種薄片,其使用於藉由在使液狀的樹脂於板狀的被加工物的一側的面擴展並硬化而形成保護一側的面之保護構件時,所述薄片包含:第一層,其與平坦的鏡面狀的載置面接觸;以及第二層,其與液狀的樹脂接觸,並且,相較於第二層,第一層係由在與載置面密接後容易從載置面分離之材質所形成,相較於第一層,第二層係由對於已硬化的樹脂之接著性高之材質所形成。
Description
本發明關於在半導體晶圓等被加工物形成保護構件時所使用之薄片以及使用該薄片之保護構件之形成方法。
在如專利文獻1或專利文獻2所揭示般之使用保護構件形成裝置對於晶圓形成保護構件時,為了保護從晶棒切下之晶圓(亦即,已切片晶圓(As sliced wafer))的一側的面,而將薄片載置於工作台的載置面,將液狀樹脂供給至薄片之上,利用晶圓的一側的面將液狀樹脂推壓展開後,藉由紫外線的照射等而使液狀樹脂硬化,藉此形成保護晶圓的一側的面側之保護構件。
並且,在專利文獻3所揭示之保護構件形成裝置中,使形成有多個元件之晶圓黏貼在黏貼於環狀框架之膠膜,將薄片載置於工作台的載置面,將液狀樹脂供給至薄片之上,利用透過膠膜而支撐於環狀框架之晶圓,將液狀樹脂推壓展開後使其硬化,藉此形成保護晶圓的一側的面側之保護構件。然後,形成保護構件後,使薄片從工作台分離,沿著晶圓的外形切斷薄片。
[習知技術文獻]
[專利文獻]
[專利文獻1]日本特開2017-168565號公報
[專利文獻2]日本特開2017-174883號公報
[專利文獻3]日本特開2020-024976號公報
[發明所欲解決的課題]
例如,在使用具有紫外線硬化性之液狀樹脂之情形中,工作台係由玻璃所構成,在利用晶圓將液狀樹脂推壓展開後,從配置於玻璃工作台之下的紫外線照射燈對液狀樹脂照射紫外線,並使液狀樹脂硬化。薄片會被此液狀樹脂硬化時的反應熱加熱。因此,液狀樹脂硬化後,在使薄片與保護構件一起從玻璃工作台分離時,會有薄片藉由反應熱而軟化並與玻璃工作台的上表面密接因此難以分離之問題。並且,在使用容易從工作台分離之材質的薄片之情形中,會有由已硬化的樹脂而成之保護構件容易從薄片及晶圓剝離之問題。
因此,本發明之目的在於提供一種薄片以及使用此薄片之保護構件之形成方法,所述薄片係使用於形成保護晶圓的一側的面之保護構件時,可容易地從工作台的載置面分離,且不會有由已硬化的樹脂而成之保護構件從薄片及晶圓剝離之情形。
[解決課題的技術手段]
根據本發明的一態樣,提供一種薄片,其使用於藉由使液狀的樹脂於板狀的被加工物的一側的面擴展並硬化而形成保護該一側的面之保護構件時,所述薄片包含:第一層,其與平坦的鏡面狀的載置面接觸;以及第二層,其與液狀的該樹脂接觸,並且,相較於該第二層,該第一層係由在與該載置面密接後容易從該載置面分離之材質所形成,相較於該第一層,該第二層係由對於已硬化的該樹脂之接著性高之材質所形成。
較佳為,所述第一層係由聚對苯二甲酸乙二酯(PET)、聚醯胺(PA)或聚醯亞胺(PI)所形成。
根據本發明的另一態樣,提供一種保護構件之形成方法,其使用所述薄片而形成保護所述被加工物的所述一側的面之保護構件,所述保護構件之形成方法包含:薄片載置步驟,其以所述第一層與所述載置面接觸之方式,將該薄片載置於該載置面;樹脂供給步驟,其將液狀的所述樹脂供給至該薄片的所述第二層側;以及保護構件形成步驟,其將該被加工物推抵至已供給至該薄片之液狀的該樹脂,將該樹脂推壓展開在該被加工物的該一側的面後,使液狀的該樹脂硬化,藉此使由已硬化的該樹脂而成之板狀的該保護構件黏著固定於該被加工物的一側的面與該薄片的該第二層。
[發明功效]
本發明的一態樣之薄片,其包含:第一層,其與平坦的鏡面狀的載置面接觸;以及第二層,其與液狀的該樹脂接觸,並且,相較於第二層,第一層係由在與載置面密接後容易從該載置面分離之材質所形成,相較於第一層,第二層係由對於已硬化的樹脂之接著性高之材質所形成,因此,不會有由已硬化的樹脂而成之保護構件從薄片剝離之情形,又,變得容易使薄片與所形成的保護構件一起從工作台分離,因此能使作業效率提升。
並且,本發明的另一態樣之保護構件之形成方法,其包含:薄片載置步驟,其以第一層與所述載置面接觸之方式,將薄片載置於載置面;樹脂供給步驟,其將液狀的樹脂供給至薄片的第二層側;以及保護構件形成步驟,其將被加工物推抵至已供給至薄片之液狀的樹脂,將樹脂推壓展開在被加工物的一側的面後,使液狀的樹脂硬化,藉此使由已硬化的樹脂而成之板狀的保護構件黏著固定於被加工物的一側的面與薄片的第二層,並且,因包含上述步驟,故不會有由已硬化的樹脂而成之保護構件從薄片剝離之情形,又,變得容易使薄片與所形成的保護構件一起從工作台分離,因此能使作業效率提升。
圖1所示之保護構件形成裝置1係在板狀的被加工物的一側的面形成保護構件之裝置的一例,且具備:殼體100,其形成加工室;裝置底座101,其配設於殼體100內;柱體102,其立設於裝置底座101上;支撐底座103,其配設成與裝置底座101側面相鄰;以及卡匣容納主體104,其與殼體100的後側(+Y方向側)連結且在上下方向具有二層的容納空間1041、容納空間1042。在成為上層之容納空間1041配設有卡匣1043,所述卡匣1043架狀地容納多個形成保護構件前的被加工物,並且在下層的容納空間1042配設有卡匣1044,所述卡匣1044架狀地容納多個形成保護構件後的被加工物。
在本實施方式中形成保護構件之被加工物係以下說明之工件組9。
圖3所示之外形為圓形板狀的半導體晶圓90例如由預定厚度的矽晶圓所構成,且在其正面900(圖3中的下表面),於格子狀的由多條預定分割線所劃分之多個區域形成有IC、LSI等元件。在此等元件的表面分別設有多個凸塊(突起電極)903。由銅等而成之凸塊903例如高度被設定成數十μm左右。
晶圓90例如成為在其正面900黏貼有直徑大於晶圓90之圓形的膠膜92的狀態。並且,膠膜92的外周部分黏貼於環狀框架93。藉此,晶圓90透過膠膜92而與環狀框架93成一體化,並構成能藉由環狀框架93進行處理之工件組9。以下,將工件組9作為被加工物9,將膠膜92的下表面作為被加工物9之形成保護構件之一側的面920,並將晶圓90的背面901作為藉由保持單元50進行吸引保持之另一側的面901。
此外,形成保護構件之被加工物亦可為晶圓90單體,在此情形中,保護構件直接形成於正面900。亦即,此正面900成為形成保護構件之一側的面。
環狀框架93係由預定的金屬(例如,SUS等)或已硬化的樹脂構成為環狀平板狀,且具備內徑比晶圓90的外徑更大之圓形的開口。晶圓90係在其中心與環狀框架93的開口的中心呈大致吻合之狀態下,透過膠膜92而被環狀框架93支撐。例如,膠膜92未能完全吸收凸塊903的凹凸,而在膠膜92的一側的面920,於與凸塊903對應之區域形成有凹凸。例如,可使用聚乙烯膠膜作為膠膜92。
圖1所示之柱體102的+Y方向側的背面係與第一支撐台1051及位於比第一支撐台1051更下方之第二支撐台1052連結。在第一支撐台1051配設有晶圓檢測部106,所述晶圓檢測部106使用拍攝影像而檢測形成保護構件前的被加工物9的中心位置等。在第二支撐台1052配設有切斷器(薄片切斷器)107,所述切斷器107沿著晶圓90的外形將形成於被加工物9之保護構件等的從晶圓90突出之部分切斷。
在卡匣容納主體104與晶圓檢測部106及切斷器107之間配設有對於卡匣1043、卡匣1044進行被加工物9的搬出搬入之多關節機器人等第一晶圓搬送機構1081,第一晶圓搬送機構1081係藉由滾珠螺桿機構等X軸方向移動機構1082而能在X軸方向往返移動。第一晶圓搬送機構1081係可將形成保護構件前的被加工物9從卡匣1043搬出並搬入至第一支撐台1051,且將保護構件形成完畢的被加工物9從第二支撐台1052搬出並搬入至卡匣1044。
在第一支撐台1051上已藉由晶圓檢測部106檢測出中心位置等之被加工物9,係藉由圖1所示之多關節機器人等第二晶圓搬送機構1090而被保持並搬送。第二晶圓搬送機構1090具備保持被加工物9並能在水平方向回旋移動之保持手,並藉由滾珠螺桿機構等Y軸方向移動機構1092而能在Y軸方向往返移動。然後,第二晶圓搬送機構1090可將被加工物9從第一支撐台1051搬出並交接至保持單元50。
在裝置底座101上配設有:薄片供給機構11,其係由多根旋轉輥等而成;以及工作台20,其具有圓形的載置面200,且由玻璃等透明構件所構成,所述載置面200載置會被滴下液狀的樹脂之薄片12。由多根輥等所構成之薄片供給機構11可從薄片12被捲繞而形成為捲筒狀之薄片捲筒129,將預期長度的薄片12朝向+Y方向輸送。
如圖2所示,工作台20例如由石英玻璃形成為圓板狀。工作台20具備平坦的鏡面狀的載置面200,所述載置面200的面積大於被加工物9之形成保護構件之一側的面920的面積,在此載置面200載置具有比載置面200更大的面積之薄片12。然後,工作台20係被具有圓形凹部之圓筒狀的框體29支撐。
在工作台20的外側面與框體29的內側面之間形成有環狀的吸引口28。如圖2所示,環狀地配置於比載置面200更外側且透過配管288而與真空產生裝置等吸引源289連通之該吸引口28,係使載置於載置面200之薄片12的下表面與載置面200之間成為真空,並進行吸引保持。例如,在配管288配設有吸引閥287,並藉由吸引閥287而能切換吸引源289與吸引口28之連通狀態與非連通狀態。
配管288係藉由三通管277而與空氣供給管276的一端連通,在空氣供給管276的另一端則與壓縮機等空氣供給源279連通。在空氣供給管276配設有電磁閥等開關閥275,並藉由開關閥275而能切換空氣供給源279與吸引口28之連通狀態與非連通狀態。
在成為工作台20的下方之位置配設有硬化單元22,所述硬化單元22係對於被下降的被加工物9推壓展開在載置於載置面200之薄片12上之液狀樹脂賦予外部刺激使其硬化而形成板狀的保護構件。硬化單元22例如具備能朝向上方照射預定波長的紫外線之UV燈。此外,在液狀樹脂供給部3供給至薄片12上之液狀的樹脂為熱硬化樹脂之情形中,硬化單元22亦可為加熱器等。
在圖1所示之支撐底座103配設有將薄片12載置於工作台20之薄片載置機構21。薄片載置機構21具備:臂部210,其在X軸方向水平延伸,並能在Y軸方向往返移動;以及夾持部211,其安裝於臂部210的側面。然後,夾持部211可夾持薄片捲筒129的薄片12的一端並將薄片12往Y軸方向拉出,將薄片12載置於工作台20的載置面200。
例如,已拉伸至工作台20的載置面200上之薄片12係被未圖示之切斷器切斷。
在工作台20的附近配設有液狀樹脂供給部3,所述液狀樹脂供給部3可將預定量的液狀的樹脂供給至被吸附保持於工作台20的載置面200之薄片12的上表面。液狀樹脂供給部3具備:樹脂供給噴嘴30;分配器31,其將液狀的樹脂以預定量送出至樹脂供給噴嘴30;以及連接管32,其連接樹脂供給噴嘴30與分配器31。樹脂供給噴嘴30具有朝向工作台20的載置面200之供給口300。樹脂供給噴嘴30成為能以Z軸方向的軸心為軸而回旋,並可將供給口300從工作台20的上方移動至撤離位置。分配器31係與未圖示的樹脂供給源連接。液狀樹脂供給部3所供給之液狀的樹脂在本實施方式中為藉由照射紫外線而硬化之紫外線硬化樹脂,但亦可為藉由加熱而硬化之熱硬化樹脂。並且,在本實施方式中,液狀的樹脂的主成分為聚氯乙烯,但並不限於此。
在圖1所示之柱體102的-Y方向側的前表面配設有擴張機構51,所述擴張機構51使保持單元50與工作台20在與載置面200垂直之方向(Z軸方向)相對地接近,將已供給至薄片12的上表面之液狀的樹脂推壓展開在藉由保持單元50所保持之被加工物9的下表面亦即一側的面920。
擴張機構51係由以下所構成:滾珠螺桿510,其具有Z軸方向(垂直方向)的軸心;一對導軌511,其配設成與滾珠螺桿510平行;馬達512,其與滾珠螺桿510連結並使滾珠螺桿510旋轉運動;以及升降保持座513,其內部的螺帽與滾珠螺桿510螺合且側部與導軌511滑接,並且,擴張機構51成為以下構成:馬達512使滾珠螺桿510旋轉,伴隨於此,升降保持座513被導軌511導引並與所支撐之保持單元50一起升降。
圖2、圖3所示之保持被加工物9之保持單元50具備:輪支撐部502,其被升降保持座513保持;圓板狀的輪500,其固定於輪支撐部502的下端側;以及保持部501,其由多孔構件等而成,且被輪500支撐,並吸引保持被加工物9。圖2所示之圓形板狀的保持部501例如被嵌入輪500的下表面側,並與真空產生裝置等吸引源59連通。然後,藉由吸引源59進行吸引而產生之吸引力會被傳遞至保持部501的露出面亦即與工作台20的載置面200面對之平坦的吸引面505,藉此保持單元50可將被加工物9吸引保持在吸引面505。
此外,在圖2中係將被加工物9簡化表示。
例如,如圖2所示,在輪500的下表面之外周側的區域係以圍繞吸引面505的方式,配設有能在Z軸方向伸縮之筒狀的蛇腹蓋507。然後,成為可使已伸展之蛇腹蓋507的下端側例如與框體29的上表面抵接並固定。此外,蛇腹蓋507的配設位置並不限於圖示的例子,其下端的固定位置也並不限於框體29的上表面。
以下,針對在使用上述的保護構件形成裝置1及圖3所詳細表示之薄片12而實施本發明的保護構 件之形成方法並將保護構件形成於被加工物9之情形中,保護構件形成裝置1的動作以及薄片12的作用。
首先,藉由圖1所示之第一晶圓搬送機構1081,從卡匣1043取出形成保護構件前的被加工物9,並搬送至第一支撐台1051上。當晶圓檢測部106檢測出被加工物9的中心位置等,第二晶圓搬送機構1090就在以保持手吸引保持被加工物9之狀態下將被加工物9從第一支撐台1051搬出,往-Y方向側移動並將被加工物9交接至保持單元50。
如圖2、圖3所示,在使保持部501的吸引面505的中心與被加工物9的中心為大致吻合之狀態下,保持單元50將被加工物9的另一側的面901吸引保持在吸引面505。接著,解除由第二晶圓搬送機構1090的保持手所進行之被加工物9的一側的面920之吸引保持,第二晶圓搬送機構1090從被加工物9的下方撤離。
(1)薄片載置步驟
與被加工物9往保持單元50的搬送並行,圖1所示之薄片載置機構21的夾持部211夾持薄片12並往+Y方向側移動,從薄片捲筒129抽出預定長度的薄片12,載置於工作台20的載置面200。然後,在圖2所示之吸引閥287呈打開之狀態下,吸引源289運作,藉由吸引源289所產生之吸引力通過配管288及吸引口28而傳遞至載置面200,藉此薄片12的下表面與載置面200之間成為真空環境,薄片12被吸附保持且密接於載置面200上。
之後,例如藉由未圖示的切斷器,將帶狀的薄片12切斷成直徑稍大於被加工物9的圓形。
此外,亦可將帶狀的薄片12切斷成預定長度,使所述被切斷之薄片12搬送至載置面200並吸引保持於載置面200上。
如圖3所示,使用於保護構件形成裝置1之本發明的上述薄片12係由第一層121與第二層122而成,所述第一層121與載置面200接觸,所述第二層122與從圖2所示之液狀樹脂供給部3對薄片12供給之樹脂39接觸。相較於第二層122,第一層121係由以下材質所形成:形成保護構件後,亦即,第一層121與載置面200密接後,在使空氣從圖2所示之環狀的吸引口28噴出並藉由空氣抬起具備保護構件之被加工物9時,容易從載置面200分離之材質。例如,第一層121係由聚對苯二甲酸乙二酯薄片所形成,聚對苯二甲酸乙二酯作為樹脂具備一定程度的硬度,且不易因樹脂39硬化時的反應熱而軟化。此外,第一層121亦可由聚醯胺薄片或聚醯亞胺薄片所形成。
相較於第一層121,第二層122係由對於在第二層122上已硬化的樹脂39之接著性高之材質所形成。在本實施方式中,例如,樹脂39係由聚氯乙烯為主成分而構成,因此第二層122使用聚烯烴系的樹脂薄片。亦即,例如,第二層122係由聚乙烯薄片、聚丙烯薄片或聚苯乙烯薄片等樹脂薄片所形成。
例如,預先將第一層121與第二層122重合,一邊施加預定壓力且推壓兩層,一邊加溫至熔點附近的溫度為止,藉此使第一層121與第二層122壓接並一體化。
(2)樹脂供給步驟
接著,圖1、圖2所示之液狀樹脂供給部3的樹脂供給噴嘴30回旋移動,將供給口300定位於載置面200上的薄片12的中央區域上方。接著,圖1所示之分配器31將溫度管理至基準溫度之液狀的樹脂39以預定量送出至樹脂供給噴嘴30,並如圖2、圖3所示,從供給口300朝向由吸引保持於工作台20之薄片12的第二層122所構成之上表面滴下液狀的樹脂39。然後,當預定量的液狀的樹脂39堆積於薄片12上,則停止由液狀樹脂供給部3所進行之對薄片12供給液狀的樹脂39的動作,樹脂供給噴嘴30回旋移動並從載置面200上撤離。
(3)保護構件形成步驟
實施樹脂供給步驟後,在保持單元50將被加工物9的另一側的面901吸引保持在吸引面505之狀態下,保持單元50藉由圖2所示之擴張機構51而下降。然後,如圖4、圖5所示,被保持單元50吸引保持之被加工物9的一側的面920與液狀的樹脂39接觸。若保持單元50進一步下降,則藉由被加工物9的一側的面920而被推壓之液狀的樹脂39會在被加工物9的徑方向被推壓展開。結果,在被加工物9的一側的面920的大範圍形成圖4、圖5所示之液狀的樹脂39的膜。液狀的樹脂39的膜會吸收膠膜92的一側的面920之與凸塊903對應之凹凸,且其下表面成為平坦面。
如上所述,在將被加工物9推抵至已供給至由薄片12的第二層122所構成之上表面之液狀的樹脂39上且將樹脂39推壓展開在被加工物9的下表面亦即一側的面920的進行中,如圖4所示般,蛇腹蓋507的下端固定於框體29的上表面,並圍繞載置面200及薄片12,而藉由保持單元50、蛇腹蓋507及框體29形成密閉的空間。然後,持續由吸引源289所進行之吸引,藉此使薄片12的下表面與載置面200之間更接近真空並密接,更確實地進行薄片12在載置面200之吸附保持。並且,因藉由被加工物9而將薄片12推向載置面200,故在薄片12與載置面200之間些許殘留的空氣也會被趕往薄片12的徑方向外側並在吸引口28被吸走。
對被加工物9的液狀的樹脂39進行預定時間的推抵,在被加工物9的一側的面920的大範圍形成液狀的樹脂39的膜後,圖4、圖5所示之硬化單元22朝向液狀的樹脂39的膜照射成為外部刺激之紫外線。結果,被賦予外部刺激之液狀的樹脂39的膜會硬化並形成於被加工物9的一側的面920以作為預定厚度的板狀的保護構件390,且保護構件390成為黏著固定於被加工物9的一側的面920與薄片12的上表面之狀態。
如上述般形成保護構件390後,使被加工物9連同薄片12一起從工作台20分離。亦即,關閉圖4所示之吸引閥287,阻斷吸引源289所產生之吸引力對於吸引口28的傳遞。再者,在開關閥275打開之狀態下從空氣供給源279供給空氣至空氣供給管276。該空氣從吸引口28朝向上方噴出,藉由此空氣的噴出壓力將薄片12從載置面200抬起,排除殘留於載置面200與薄片12之間的真空吸附力,使被加工物9、保護構件390及薄片12確實地從工作台20脫離。
在形成有保護構件390之被加工物9從工作台20脫離中,即使薄片12會被先前已說明之圖4、圖5所示之液狀的樹脂39的硬化單元22進行硬化時的反應熱加熱,由於薄片12之與工作台20的載置面200接觸之圖5所示之第一層121係例如由如聚對苯二甲酸乙二酯般不易因反應熱而軟化且保持一定程度的硬度之材質所形成,因此在藉由從吸引口28朝上方噴射之空氣的噴射壓力而將薄片12的外周部分抬起時,不僅外周部被抬起,中央也會被抬起,因此變得容易從工作台20分離,而提升作業效率。並且,相較於第一層121,第二層122係由對於已硬化的樹脂39之接著性高之材質所形成,藉此不會有薄片12從所形成的保護構件390剝離之情形。
形成有保護構件390之被加工物9係藉由圖1所示之第二晶圓搬送機構1090而被搬送至第二支撐台1052,藉由切斷器107而沿著晶圓90的外周緣將多餘的薄片12、保護構件390及膠膜92切斷成圓形,並藉由第一晶圓搬送機構1081而被容納於卡匣1044。
之後,被加工物9係以未形成保護構件390之另一側的面901成為上側之方式,被載置於未圖示之研削裝置的卡盤台的保持面上,使旋轉的研削輪從被加工物9的上方下降,使研削磨石與被加工物9的另一側的面901抵接並進行研削。之後,藉由膠膜剝離裝置從被加工物9剝離保護構件390,接著,進一步研削被保護構件390保護之被加工物9的一側的面920,藉此可製造兩面成為平坦面之被加工物9。
本發明之薄片及保護構件之形成方法並不限於上述實施方式,理所當然可在其技術思想之範圍內利用各種不同方式進行實施。並且,關於隨附圖式所圖示之保護構件形成裝置1的各構成的形狀等,亦未受限於此,在可發揮本發明之效果的範圍內能適當變更。
9:被加工物(工件組)
90:半導體晶圓
900:晶圓的正面
901:晶圓的背面(被加工物的另一側的面)
903:凸塊
92:膠膜
920:被加工物的一側的面
93:環狀框架
1:保護構件形成裝置
100:殼體
101:裝置底座
102:柱體
103:支撐底座
104:卡匣容納主體
1041,1042:容納空間
1043,1044:卡匣
1051:第一支撐台
1052:第二支撐台
106:晶圓檢測部
107:切斷器
1081:第一晶圓搬送機構
1082:X軸方向移動機構
1090:第二晶圓搬送機構
1092:Y軸方向移動機構
11:薄片供給機構
12:薄片
121:第一層
122:第二層
129:薄片捲筒
20:工作台
200:載置面
29:框體
28:吸引口
288:配管
287:吸引閥
289:吸引源
277:三通管
276:空氣供給管
279:空氣供給源
275:開關閥
21:薄片載置機構
210:臂部
211:夾持部
22:硬化單元
3:液狀樹脂供給部
30:樹脂供給噴嘴
300:供給口
31:分配器
32:連接管
39:樹脂
50:保持單元
500:輪
501:保持部
505:吸引面
502:輪支撐部
59:吸引源
507:蛇腹蓋
51:擴張機構
510:滾珠螺桿
511:導軌
512:馬達
圖1係表示保護構件形成裝置的一例之立體圖。
圖2係說明保持單元、擴張機構、工作台、硬化單元及液狀樹脂供給部之剖面圖。
圖3係說明被加工物、薄片、保持單元及工作台之剖面圖。
圖4係說明下述情形之剖面圖:將被加工物推抵至已供給至薄片的上表面之液狀的樹脂上,將樹脂推壓展開在被加工物的一側的面亦即下表面後,對於液狀的樹脂賦予外部刺激使其硬化,使樹脂形成為板狀,並使樹脂黏著固定於被加工物的下表面與薄片的上表面。
圖5係放大說明下述情形之剖面圖:將被加工物推抵至已供給至薄片的上表面之液狀的樹脂上,將樹脂推壓展開在被加工物的一側的面亦即下表面後,對於液狀的樹脂賦予外部刺激使其硬化,使樹脂形成為板狀,並使樹脂黏著固定於被加工物的下表面與薄片的上表面。
12:薄片
121:第一層
122:第二層
20:工作台
200:載置面
22:硬化單元
39:樹脂
390:保護構件
50:保持單元
500:輪
501:保持部
505:吸引面
9:被加工物(工件組)
90:半導體晶圓
900:晶圓的正面
901:晶圓的背面(被加工物的另一側的面)
903:凸塊
92:膠膜
920:被加工物的一側的面
93:環狀框架
Claims (3)
- 一種薄片,其使用於藉由使液狀的樹脂於板狀的被加工物的一側的面擴展並硬化而形成保護該一側的面之保護構件時, 所述薄片包含: 第一層,其與平坦的鏡面狀的載置面接觸;以及 第二層,其與液狀的該樹脂接觸, 相較於該第二層,該第一層係由在與該載置面密接後容易從該載置面分離之材質所形成, 相較於該第一層,該第二層係由對於已硬化的該樹脂之接著性高之材質所形成。
- 如請求項1之薄片,其中,所述第一層係由聚對苯二甲酸乙二酯、聚醯胺或聚醯亞胺所形成。
- 一種保護構件之形成方法,其使用如請求項1或2之薄片而形成保護所述被加工物的所述一側的面之保護構件, 所述保護構件之形成方法包含: 薄片載置步驟,其以所述第一層與所述載置面接觸之方式,將該薄片載置於該載置面; 樹脂供給步驟,其將液狀的所述樹脂供給至該薄片的所述第二層側;以及 保護構件形成步驟,其將該被加工物推抵至已供給至該薄片之液狀的該樹脂,將該樹脂推壓展開在該被加工物的該一側的面後,使液狀的該樹脂硬化,藉此使由已硬化的該樹脂而成之板狀的該保護構件黏著固定於該被加工物的一側的面與該薄片的該第二層。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020123691A JP2022020286A (ja) | 2020-07-20 | 2020-07-20 | 保護部材形成装置で用いるシート、及び保護部材形成方法 |
JP2020-123691 | 2020-07-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202205419A true TW202205419A (zh) | 2022-02-01 |
Family
ID=79021367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110126122A TW202205419A (zh) | 2020-07-20 | 2021-07-15 | 薄片以及保護構件之形成方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220020603A1 (zh) |
JP (1) | JP2022020286A (zh) |
KR (1) | KR20220011074A (zh) |
CN (1) | CN113953133A (zh) |
DE (1) | DE102021207336A1 (zh) |
TW (1) | TW202205419A (zh) |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005056676A1 (ja) * | 2003-12-11 | 2005-06-23 | Hitachi Chemical Co., Ltd. | 封止用エポキシ樹脂成形材料および電子部品装置 |
JP4477062B2 (ja) * | 2005-05-17 | 2010-06-09 | パナソニック株式会社 | フリップチップ実装方法 |
JP2010062269A (ja) * | 2008-09-02 | 2010-03-18 | Three M Innovative Properties Co | ウェーハ積層体の製造方法、ウェーハ積層体製造装置、ウェーハ積層体、支持層剥離方法、及びウェーハの製造方法 |
JP6058250B2 (ja) * | 2010-04-12 | 2017-01-11 | 日東電工株式会社 | 粒子分散樹脂組成物、粒子分散樹脂成形体およびそれらの製造方法 |
JP5421967B2 (ja) * | 2011-09-07 | 2014-02-19 | 東京エレクトロン株式会社 | 接合方法、プログラム、コンピュータ記憶媒体及び接合システム |
KR101864920B1 (ko) * | 2011-09-27 | 2018-06-05 | 마루젠 세끼유가가꾸 가부시키가이샤 | 광학 소자 재료, 및 그 제조 방법 |
TW201329145A (zh) * | 2011-11-28 | 2013-07-16 | Nitto Denko Corp | 底層充填材料及半導體裝置之製造方法 |
CN103137501A (zh) * | 2011-11-28 | 2013-06-05 | 日东电工株式会社 | 半导体装置的制造方法 |
JP5544052B2 (ja) * | 2011-12-26 | 2014-07-09 | リンテック株式会社 | 保護膜形成層付ダイシングシートおよびチップの製造方法 |
JP5976573B2 (ja) * | 2013-03-13 | 2016-08-23 | 日東電工株式会社 | 補強シート及び二次実装半導体装置の製造方法 |
TWI547378B (zh) * | 2013-04-05 | 2016-09-01 | 三菱麗陽股份有限公司 | 積層結構體及其製造方法、物品 |
JP6004100B2 (ja) * | 2013-05-24 | 2016-10-05 | 富士電機株式会社 | 半導体装置の製造方法 |
KR20150011072A (ko) * | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
WO2015046529A1 (ja) * | 2013-09-30 | 2015-04-02 | リンテック株式会社 | 樹脂膜形成用複合シート |
JP6322278B2 (ja) * | 2014-02-18 | 2018-05-09 | シャープ株式会社 | 積層フィルム及びフィルム貼り付け方法 |
US10046543B2 (en) * | 2014-02-18 | 2018-08-14 | Sharp Kabushiki Kaisha | Laminated film and film attachment method |
TW201618961A (zh) * | 2014-08-27 | 2016-06-01 | 3M新設資產公司 | 電多層層壓轉印膜 |
KR102064584B1 (ko) * | 2015-10-29 | 2020-01-10 | 히타치가세이가부시끼가이샤 | 반도체용 접착제, 반도체 장치 및 그것을 제조하는 방법 |
TWI641494B (zh) * | 2015-11-04 | 2018-11-21 | 日商琳得科股份有限公司 | 第一保護膜形成用片、第一保護膜形成方法以及半導體晶片的製造方法 |
JP6602702B2 (ja) | 2016-03-15 | 2019-11-06 | 株式会社ディスコ | 保護部材形成装置 |
JP6641209B2 (ja) | 2016-03-22 | 2020-02-05 | 株式会社ディスコ | 保護部材形成装置 |
JP7108492B2 (ja) | 2018-08-06 | 2022-07-28 | 株式会社ディスコ | 保護部材形成装置 |
JP7233883B2 (ja) * | 2018-10-30 | 2023-03-07 | 株式会社ディスコ | 保護部材の形成方法 |
KR20220041110A (ko) * | 2019-08-09 | 2022-03-31 | 나가세케무텍쿠스가부시키가이샤 | 몰드 언더필 봉지용의 다층 시트, 몰드 언더필 봉지 방법, 전자 부품 실장 기판 및 전자 부품 실장 기판의 제조 방법 |
JP2022151286A (ja) * | 2021-03-26 | 2022-10-07 | 富士フイルムビジネスイノベーション株式会社 | ポリイミド前駆体含有水性組成物、ポリイミド膜の製造方法、及び多孔質ポリイミド膜の製造方法 |
JP2022175935A (ja) * | 2021-05-14 | 2022-11-25 | 株式会社ディスコ | 保護部材付き被加工物の製造方法、被加工物の加工方法、及び被加工物の保護部材 |
JP2023035685A (ja) * | 2021-09-01 | 2023-03-13 | 富士フイルムビジネスイノベーション株式会社 | ポリイミド前駆体溶液、多孔質ポリイミド膜及び絶縁電線 |
-
2020
- 2020-07-20 JP JP2020123691A patent/JP2022020286A/ja active Pending
-
2021
- 2021-06-16 KR KR1020210077759A patent/KR20220011074A/ko active Search and Examination
- 2021-07-12 DE DE102021207336.0A patent/DE102021207336A1/de active Pending
- 2021-07-13 CN CN202110790472.1A patent/CN113953133A/zh active Pending
- 2021-07-15 TW TW110126122A patent/TW202205419A/zh unknown
- 2021-07-19 US US17/378,974 patent/US20220020603A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2022020286A (ja) | 2022-02-01 |
CN113953133A (zh) | 2022-01-21 |
US20220020603A1 (en) | 2022-01-20 |
KR20220011074A (ko) | 2022-01-27 |
DE102021207336A1 (de) | 2022-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI829950B (zh) | 保護構件形成方法及保護構件形成裝置 | |
US10403490B2 (en) | Wafer processing method | |
US10763172B2 (en) | Method of processing wafer | |
KR102450305B1 (ko) | 웨이퍼의 가공 방법 | |
KR102450309B1 (ko) | 웨이퍼의 가공 방법 | |
JP6904368B2 (ja) | 半導体基板の処理方法及び半導体基板の処理装置 | |
JP7108492B2 (ja) | 保護部材形成装置 | |
JP5762213B2 (ja) | 板状物の研削方法 | |
KR20150106833A (ko) | 웨이퍼 처리 장치 및 웨이퍼 처리 방법 | |
KR102445610B1 (ko) | 웨이퍼의 가공 방법 | |
TW202205419A (zh) | 薄片以及保護構件之形成方法 | |
JP2018198241A (ja) | ウェーハの加工方法 | |
TW202141607A (zh) | 晶圓之加工方法 | |
JP6401988B2 (ja) | 加工装置及びウエーハの加工方法 | |
TW202128298A (zh) | 載置面清掃方法 | |
KR20240040628A (ko) | 웨이퍼의 가공 방법 | |
TW201937617A (zh) | 板狀物的加工方法 |