TW201618961A - 電多層層壓轉印膜 - Google Patents
電多層層壓轉印膜 Download PDFInfo
- Publication number
- TW201618961A TW201618961A TW104127976A TW104127976A TW201618961A TW 201618961 A TW201618961 A TW 201618961A TW 104127976 A TW104127976 A TW 104127976A TW 104127976 A TW104127976 A TW 104127976A TW 201618961 A TW201618961 A TW 201618961A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrical
- precursor
- layer
- precursor layer
- stack
- Prior art date
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 54
- 238000003475 lamination Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000002243 precursor Substances 0.000 claims description 202
- 239000000463 material Substances 0.000 claims description 117
- 239000000758 substrate Substances 0.000 claims description 29
- 239000002105 nanoparticle Substances 0.000 claims description 23
- 238000001035 drying Methods 0.000 claims description 19
- 229920000642 polymer Polymers 0.000 claims description 16
- 239000002086 nanomaterial Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 13
- 239000003792 electrolyte Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 9
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229920001795 coordination polymer Polymers 0.000 claims description 4
- 239000002001 electrolyte material Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 239000007773 negative electrode material Substances 0.000 claims description 3
- 239000007774 positive electrode material Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000012777 electrically insulating material Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000011553 magnetic fluid Substances 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012760 heat stabilizer Substances 0.000 claims 1
- 229920000620 organic polymer Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 270
- 239000010408 film Substances 0.000 description 45
- -1 resistors Substances 0.000 description 44
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 239000000370 acceptor Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 238000005979 thermal decomposition reaction Methods 0.000 description 11
- 238000001125 extrusion Methods 0.000 description 10
- 229910000420 cerium oxide Inorganic materials 0.000 description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 8
- 238000009472 formulation Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 7
- 229910002113 barium titanate Inorganic materials 0.000 description 7
- 229920001169 thermoplastic Polymers 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 239000004416 thermosoftening plastic Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 150000002118 epoxides Chemical class 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 description 2
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910015118 LiMO Inorganic materials 0.000 description 2
- 241001124569 Lycaenidae Species 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 150000001345 alkine derivatives Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000005336 allyloxy group Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 239000005328 architectural glass Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- KVBYPTUGEKVEIJ-UHFFFAOYSA-N benzene-1,3-diol;formaldehyde Chemical compound O=C.OC1=CC=CC(O)=C1 KVBYPTUGEKVEIJ-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 229920001002 functional polymer Polymers 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229940097275 indigo Drugs 0.000 description 2
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000013086 organic photovoltaic Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005325 percolation Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- JWYVGKFDLWWQJX-UHFFFAOYSA-N 1-ethenylazepan-2-one Chemical compound C=CN1CCCCCC1=O JWYVGKFDLWWQJX-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- LNBMZFHIYRDKNS-UHFFFAOYSA-N 2,2-dimethoxy-1-phenylethanone Chemical compound COC(OC)C(=O)C1=CC=CC=C1 LNBMZFHIYRDKNS-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- ICFXCSLDPCMWJI-UHFFFAOYSA-N 2,3-dimethylbut-2-enoic acid;2-ethyl-2-(hydroxymethyl)propane-1,3-diol Chemical compound CC(C)=C(C)C(O)=O.CCC(CO)(CO)CO ICFXCSLDPCMWJI-UHFFFAOYSA-N 0.000 description 1
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical compound OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- JVVRCYWZTJLJSG-UHFFFAOYSA-N 4-dimethylaminophenol Chemical compound CN(C)C1=CC=C(O)C=C1 JVVRCYWZTJLJSG-UHFFFAOYSA-N 0.000 description 1
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 1
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-dimethylaminopyridine Substances CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 1
- 229920001621 AMOLED Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000012958 Amine synergist Substances 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- AZLFKSIOPSJXLW-UHFFFAOYSA-H C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].[La+3].[Ce+3].C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-] Chemical compound C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].[La+3].[Ce+3].C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-] AZLFKSIOPSJXLW-UHFFFAOYSA-H 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920001747 Cellulose diacetate Polymers 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018869 La0.5Li0.5TiO3 Inorganic materials 0.000 description 1
- 229910018133 Li 2 S-SiS 2 Inorganic materials 0.000 description 1
- 229910005317 Li14Zn(GeO4)4 Inorganic materials 0.000 description 1
- 229910007860 Li3.25Ge0.25P0.75S4 Inorganic materials 0.000 description 1
- 229910013275 LiMPO Inorganic materials 0.000 description 1
- 229910013302 LiMS Inorganic materials 0.000 description 1
- 229910012305 LiPON Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- LCXXNKZQVOXMEH-UHFFFAOYSA-N Tetrahydrofurfuryl methacrylate Chemical compound CC(=C)C(=O)OCC1CCCO1 LCXXNKZQVOXMEH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004708 Very-low-density polyethylene Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- FDLZQPXZHIFURF-UHFFFAOYSA-N [O-2].[Ti+4].[Li+] Chemical compound [O-2].[Ti+4].[Li+] FDLZQPXZHIFURF-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- CVXNLQMWLGJQMZ-UHFFFAOYSA-N arsenic zinc Chemical compound [Zn].[As] CVXNLQMWLGJQMZ-UHFFFAOYSA-N 0.000 description 1
- 229910021383 artificial graphite Inorganic materials 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 150000001541 aziridines Chemical class 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 150000004657 carbamic acid derivatives Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000011852 carbon nanoparticle Substances 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 150000001851 cinnamic acid derivatives Chemical class 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000011370 conductive nanoparticle Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 150000001916 cyano esters Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 125000003976 glyceryl group Chemical group [H]C([*])([H])C(O[H])([H])C(O[H])([H])[H] 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical class [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- DCYOBGZUOMKFPA-UHFFFAOYSA-N iron(2+);iron(3+);octadecacyanide Chemical compound [Fe+2].[Fe+2].[Fe+2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] DCYOBGZUOMKFPA-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 229920000092 linear low density polyethylene Polymers 0.000 description 1
- 239000004707 linear low-density polyethylene Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002064 nanoplatelet Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- 125000002347 octyl group Chemical class [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000006384 oligomerization reaction Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 description 1
- QLQOTPOBMXWKOW-UHFFFAOYSA-N phosphinothious acid Chemical compound SP QLQOTPOBMXWKOW-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000379 polypropylene carbonate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229960003351 prussian blue Drugs 0.000 description 1
- 239000013225 prussian blue Substances 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003553 thiiranes Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- RYYWUUFWQRZTIU-UHFFFAOYSA-K thiophosphate Chemical compound [O-]P([O-])([O-])=S RYYWUUFWQRZTIU-UHFFFAOYSA-K 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920001866 very low density polyethylene Polymers 0.000 description 1
- 229920001567 vinyl ester resin Chemical class 0.000 description 1
- 239000005301 willow glass Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0036—Heat treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
- B32B37/025—Transfer laminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/025—Electric or magnetic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/308—Stacked capacitors made by transfer techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/206—Insulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/302—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/10—Batteries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/16—Capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0471—Processes of manufacture in general involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/005—Devices for making primary cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Laminated Bodies (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Secondary Cells (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
揭示轉印膜、由其製造之物品、及製造與使用轉印膜形成一電堆疊之方法。
Description
許多常見電裝置可於撓性基材上以連續方式製造。基於連續膜之方法已展示用於電容器、電阻器、薄膜電池、有機光伏打電池(OPVs)、有機發光二極體(OLEDs)、及其他組件之完全或部分製造。然而,較少可用於生產全積體多層電膜(特定言之具有大量層及電極,例如超過100層之多層電膜)之連續技術。此外,許多薄膜電裝置經由多個氣相沉積及圖案化步驟生產。因此,存在對複雜電裝置及製造其之方法的需求。
本揭露係有關多層層壓轉印膜、形成此等層壓轉印膜之方法、及使用此等層壓轉印膜之方法。此等層壓轉印膜利用電前體層,該等電前體層可在移除犧牲性材料且密緻化熱安定性材料之高溫步驟之後電耦合。
在一個態樣中,轉印膜包括形成電前體層堆疊之複數個共同延伸電前體層。至少選定之電前體層或各電前體層獨立地包含至少25wt%犧牲性材料與熱安定性材料及小於25微米之均勻厚度。
在另一態樣中,轉印膜包括形成電前體層堆疊之複數個共同延伸電前體層。當加熱至至少選定之前體層或各前體層之Tg與Tdec之間的溫度且在100/s之剪切速率下,至少選定之前體層或各前體層獨立地展現在103與104泊之間的複數黏度(complex viscosity)。
在另一態樣中,轉印膜包括形成電前體層堆疊之複數個指叉(interdigitated)電前體層。至少選定之電前體層或各電前體層獨立地包含至少25wt%犧牲性材料與熱安定性材料及小於25微米之均勻厚度。
在又一態樣中,轉印膜包括形成電前體層堆疊之複數個指叉電前體層。當加熱至至少選定之前體層或各前體層之Tg與Tdec之間的溫度且在100/s之剪切速率下,至少選定之前體層或各前體層獨立地展現在103與104泊之間的複數黏度。
在另一態樣中,一種方法包括將本文說明之轉印膜層壓至受體基材,並烘乾犧牲性材料,以形成電堆疊。
在又一態樣中,一種方法包括沉積複數個指叉電前體層以形成電前體層堆疊。各前體層獨立地具有犧牲性材料與熱安定性材料及小於25微米之均勻厚度。
在仍又一態樣中,一種方法包括共同擠壓複數個指叉電前體層以形成電前體層堆疊。各前體層獨立地包括犧牲性材料與熱安定性材料。
這些以及多種其他特徵與優點將因研讀下面的詳細說明而明顯可知。
2‧‧‧箭頭
4‧‧‧箭頭
6‧‧‧箭頭
8‧‧‧箭頭
10‧‧‧多層指叉電極堆疊/堆疊
11‧‧‧聚合物支撐層/載體層
12‧‧‧電極層
13‧‧‧可釋離表面/離型材料
14‧‧‧電極層
15‧‧‧表層
16‧‧‧絕緣層
17‧‧‧表層
18‧‧‧垂直匯流排/匯流排
20‧‧‧前體層堆疊/電前體層堆疊/垂直匯流排/匯流排
21‧‧‧熱安定性材料
22‧‧‧層/電前體層/前體層
23‧‧‧層/電前體層/前體層
24‧‧‧層/電前體層/前體層
25‧‧‧電堆疊
26‧‧‧犧牲性材料
29‧‧‧犧牲性黏著劑層/犧牲性黏著劑
34‧‧‧多線指叉電極堆疊/堆疊
36‧‧‧電極層
38‧‧‧電極層
40‧‧‧受體基材/絕緣層
42‧‧‧水平匯流排/匯流排
44‧‧‧水平匯流排/匯流排
50‧‧‧圖解製程流程圖
100‧‧‧轉印膜
110‧‧‧層壓之轉印膜/受體基材物品
x‧‧‧方向
y‧‧‧方向
z‧‧‧方向
由於結合隨附圖式與以下本揭露之各個實施例的實施方式可更完整理解本揭露,其中:圖1為說明形成轉印膜與電堆疊之方法之圖解製程流程圖;圖2為藉由層壓轉印及烘乾所形成具有負電極及正電極之三層電堆疊之示意圖;圖3為具有埋沒(buried)電極及垂直匯流排之多層指叉電極膜之截面示意圖;及圖4為具有水平匯流排之多線(multilane)指叉電極膜之截面示意圖。
下文實施方式將參考構成本說明書之一部分的隨附圖式,而且在其中以圖解說明的方式呈現數個具體實施例。應瞭解,可設想出並做出其他實施例而不偏離本揭露的範疇或精神。因此,以下之詳細敘述並非作為限定之用。
除非另有指明,本文中所用所有科學以及技術詞彙具本技藝中所通用的意義。本文所提出的定義是要增進對於本文常用之某些詞彙的理解,並不是要限制本揭露的範疇。
除非另有指明,否則說明書及申請專利範圍中用以表達特徵之尺寸、數量以及物理特性的所有數字,皆應理解為在所有情況下以「約(about)」一詞修飾之。因此,除非另有相反指示,否則在前面說明書以及隨附申請專利範圍中所提出的數值參數為近似值,其可
依據所屬技術領域中具有通常知識者運用在本文中所揭示之教導而獲得的所要特性而變。
由端點表述的數值範圍包括在該範圍之內包含的所有數字(例如,1至5包括1、1.5、2、2.75、3、3.80、4、及5)以及該範圍內的任何範圍。
如本說明書以及隨附申請專利範圍中所使用,除非內文明確地另有所指,單數形「一(a、an)」以及「該(the)」涵蓋具有複數個指稱物(referents)的實施例。
如本說明書以及隨附申請專利範圍中所使用,「或(or)」一詞一般是用來包括「及/或(and/or)」的意思,除非內文明確另有所指。
如本文中所使用,「具有(have,having)」、「包括(include,including)」、「包含(comprise,comprising)」或諸如此類係以其開放式意義使用,且一般意指「包括但不限於(including,but not limited to)」。應理解,「基本上由...組成(consisting essentially of)」、「由...組成(consisting of)」、以及類似用語係歸於「包含(comprising)」以及類似用語中。
在本揭露中:「烘乾(bake-out)」意指藉由熱分解、燃燒、昇華、或蒸發而將存在於一層中之犧牲材料實質移除的製程;
「烘乾溫度(bake-out temperature)」意指在藉由熱分解、燃燒、昇華、或蒸發而將在一層中之犧牲性材料實質移除的製程內所達到的最大溫度;「燃燒(combust或combustion)」係指於氧化蒙氣中加熱包含有機材料之層,以使該有機材料與該氧化劑進行化學反應之過程;「熱分解(pyrolyze或pyrolysis)」係指於惰性氣氛中加熱犧牲性材料以使其分解之過程;「電前體層(electrical protolayer)」係指轉印膜中之層,該層為最終烘乾電堆疊中電層之前驅物層,其中電層係起如導體、絕緣體、功能電極電解質、氧化劑、或還原劑之作用;「電堆疊(electrical stack)」係指兩層或更多層,該兩層或更多層組合時產生電效應。此等效應可包括跨電堆疊內之界面發生之現象,諸如離子傳導、電子傳導、電荷分離等。電堆疊亦可展現複合性能,包括電容、能量儲存、能量捕獲(harvesting)等。其他複合性能屬性可包括電致變色、空間光調變、及其他電光學現象。
「熱安定性(thermally stable)」係指材料在移除犧牲性材料期間保持實質上完整,或材料之化學前驅物在移除犧牲性材料期間保持實質上完整。
「密緻化(densify)」係指可使熱安定性材料在烘乾過程中增加重量及/或體積比例之過程。例如:在密緻化層中,奈米粒子之
局部濃度(重量或體積%)相對於其在前體層中之局部濃度提高。然而,個別奈米粒子之平均體積可能不會因為密緻化過程而改變。
本揭露係有關多層層壓轉印膜、形成此等層壓轉印膜之方法、及使用此等層壓轉印膜之方法。此等多層層壓轉印膜利用電前體層,該等電前體層可在移除犧牲性材料且密緻化熱安定性材料之高溫步驟之後電耦合。潛在地,例如,該製程可用以產生大面積、無膜、耐久性的無機電裝置,諸如電致變色窗、光伏打裝置、電容器、超級電容器、電池、電阻器、致動器、及能量捕獲器。本文所述之轉印膜包括形成電前體層堆疊之複數個共同延伸或指叉電前體層。各電前體層獨立地包括犧牲性材料及熱安定性材料且可具有小於25微米之厚度。在許多實施例中,至少選定之電前體層或各電前體層獨立地具有至少25wt%犧牲性材料與熱安定性材料及小於25微米之均勻厚度。在許多實施例中,當加熱至至少選定之前體層或各前體層之Tg與Tdec之間的溫度且在100/s之剪切速率下,至少選定之前體層或各前體層獨立地展現在103與104泊之間的複數黏度。此等電轉印膜可經層壓至熱安定性受體基材上且烘乾以形成用於諸如電致變色窗、光伏打裝置、電容器、超級電容器、電池、致動器、及能量捕獲器等裝置中之電堆疊,該等裝置皆基於係起如導體、絕緣體、功能電極、電解質、氧化劑、或還原劑之作用之具有離散層之多層構造。因此,電前體層係起如導體、絕緣體、氧化劑、還原劑、電解質等作用之無機電層之前驅物。電前體層可經調配、塗布、成層(layered)於堆疊中,且經烘乾以使堆疊內之電前體層之熱安定性組分在烘乾步驟期間密緻化、層
疊(stratify)、且物理結合在一起。電前體層之使用允許以小體積裝載加工無機材料(例如次滲透(sub-percolation)濃度之傳導材料),實現諸如多層之熱塑性擠壓之技術。可利用任何數量之電前體層,諸如以下層數:3或更多、5或更多、10或更多、25或更多、50或更多、100或更多、或500或更多。雖然未如此限制本揭露,但透過下文所提供之討論,將獲得對本揭露之各種態樣之理解。
圖1為說明形成轉印膜100與電堆疊25之方法之圖解製程流程圖50。在一些實施例中,功能性電裝置係藉由於後續加工步驟中添加頂部電極完成。可使用電極應用之任何慣用方式,包括,例如,真空沉積傳導無機薄膜、施加傳導墨水、及施加傳導黏著劑或施加傳導膠帶。
轉印膜100包括複數個實質上平行之層(或電前體層)22、23與24,其等形成前體層堆疊20。實質上平行之層(或電前體層)可如圖1中所說明係共同延伸或如圖3及圖4中所說明係指叉。實質上平行之層可包括電前體層堆疊中之偏移電前體層。具有偏移電前體層之電前體層堆疊可具有延伸自電前體層堆疊之一或多個前體層中之一小部分以允許烘乾電堆疊中之電連接。偏移之層之比例可為層寬度之25%、或層寬度之10%、或層寬度之5%、或層寬度之1%,儘管圖1及圖2說明形成前體層堆疊20之三個電前體層22、23及24,但是應理解,前體層堆疊20可包括任何有用數目的電前體層,諸如至少3、至少5、至少10、至少25、至少50、至少100、或至少500個電前體層。
圖2為電前體層堆疊20在烘乾步驟期間密緻化之圖解圖。各層22、23及24獨立地包括犧牲性材料26及熱安定性材料21且說明為大體上均勻共同延伸但可如圖3及圖4中所說明係指叉。
許多實施例中,前體層22、23、及24各具有小於30微米或小於25微米或小於20微米或小於15微米或在1至25微米範圍內之均勻厚度。其他實施例中,前體層22、23、及24各具有小於1微米或小於750奈米或小於500奈米或小於250奈米或在100至1000奈米範圍內之均勻厚度。
各前體層22、23、及24之調配物係經過設計以在最終烘乾電堆疊中提供不同電性質。
儘管說明前體層堆疊20具有三層不同層調配物22、23、及24(或A、B、及C),但是應理解,前體層堆疊20可具有四種不同層調配物A、B、C、及D或交替層諸如A、B、A、B等。其他層組態為可能的,包括A、A、B、C;A、B、C、A;及具有重複層群組子集(subsets)之層組態(例如[AB]x[CD]y、A[BC]xD等,其中x及y為1與250之間之整數)。
前體層堆疊20可經沉積或形成於具有一可釋離表面13之聚合物支撐層或載體層11上。聚合物支撐層或載體層11可利用熱安定性撓性膜實現,其提供機械性支撐給前體層堆疊20。聚合物支撐層11具有一可釋離表面13,此表示聚合物支撐層11可以釋離經施加在可釋離表面13上之前體層堆疊20。聚合物支撐層或載體層11可在
70℃以上,或在120℃以上保持熱安定性。一種載體膜實例為聚對苯二甲酸乙二酯(「PET」)。
由各種熱固性或熱塑性聚合物組成的各種聚合物膜基材適合用來作為聚合物支撐層或載體層11。聚合物支撐層或載體層11可為單一層或多層膜。可採用作為載體層膜之聚合物實例包括(1)氟化聚合物,如:聚(氯三氟乙烯)、聚(四氟乙烯-共-六氟丙烯)、聚(四氟乙烯-共-全氟(烷基)乙烯基醚)、聚(二氟亞乙烯-共-六氟丙烯);(2)具有鈉或鋅離子之離子性聚合物乙烯共聚物聚(乙烯-共-甲基丙烯酸),如:來自E.I.duPont de Nemours,Wilmington,DE.之SURLYN-8920(品名)與SURLYN-9910(品名);(3)低密度聚烯烴,如:低密度聚乙烯;線性低密度聚乙烯;及極低密度聚乙烯;塑化乙烯基鹵化物聚合物,如:塑化聚(乙烯氯);(4)聚乙烯共聚物,包括酸官能基聚合物,如:聚(乙烯-共-丙烯酸)「EAA」、聚(乙烯-共-甲基丙烯酸)「EMA」、聚(乙烯-共-馬來酸)、與聚(乙烯-共-富馬酸);丙烯官能基聚合物,如:聚(乙烯-共-丙烯酸烷基酯),其中該烷基為甲基、乙基、丙基、丁基及類似者,或CH3(CH2)n-,其中n為0至12,及聚(乙烯-共-乙酸乙烯酯)「EVA」;及(5)(例如)脂系聚胺基甲酸酯。聚合物支撐層或載體層11可為烯烴聚合物材料,通常包含至少50wt%之具有2至8個碳原子的烯烴,其中最常使用乙烯及丙烯。其它聚合物支撐層或載體層11包括例如聚(萘二甲酸乙二酯)、聚碳酸酯、聚(甲基)丙烯酸酯(例如聚甲基丙烯酸甲酯或「PMMA」)、聚烯烴(例如聚丙烯或「PP」)、聚酯(例如聚對苯二甲酸乙二酯或「PET」)、聚
醯胺、聚醯亞胺、酚樹脂、二醋酸纖維素、三醋酸纖維素(TAC)、聚苯乙烯、苯乙烯-丙烯腈共聚物、環狀烯烴共聚物、環氧化物、及類似物。在一些實施例中,聚合物支撐層或載體層11可包括紙、離型塗布紙、非織物、織物(織品)、金屬膜和金屬箔。
在一些實施例中,載體層11可包括可在烘乾製程期間保留於前體層堆疊20上之犧牲性材料。例如:載體層11可包括在PET層上之PMMA離型層,其中當從PET層釋離時,該離型層仍留在前體層堆疊20上。犧牲性材料(如:PMMA離型層)可經過加熱條件進行熱分解,其可讓存在於犧牲層中之實質上所有有機材料均蒸發或分解成揮發性副產物。此等例子中,該層稱為犧牲性離型層。此等犧牲性層亦可經過燃燒,以燒除存在於犧牲性層中之所有有機材料。典型地,可使用透明之高純度聚合物,如聚(甲基丙烯酸甲酯)、或聚(丙烯酸乙酯-共-甲基丙烯酸甲酯)作為犧牲性材料。適用之犧牲性材料在烘乾溫度下熱分解或燃燒後,殘留極少量有機殘餘物(灰份)。
前體層堆疊20可藉由任何有用的方法形成並施加至或沉積於(箭頭2)支撐層或載體層11上。在許多實施例中,前體層堆疊20係由各層22、23、24依序在彼此上形成而形成。在其他實施例中,前體層堆疊20係藉由同時擠壓或形成各層22、23、24而形成。犧牲性黏著劑層29可施加或沉積在(箭頭4)前體層堆疊20上,以協助前體層堆疊20在層壓過程中黏著在受體基材40上(箭頭6)。此層壓之轉印膜/受體基材物品110可再經過烘乾(箭頭8)以移除前
體層22、23、24中之犧牲性材料26。所得烘乾物品為電堆疊25。犧牲性黏著劑29與任何離型材料13亦可被烘乾,留下固定在受體基材40上之電堆疊25。
舉例而言,形成前體層堆疊20之複數個或前體層22、23及24可藉由任何塗布方法或擠壓方法沉積。為了實現此等塗布或擠壓方法,當加熱至前體層堆疊中之各層或選定之層之Tg與Tdec之間的溫度且在100/s之剪切速率下,前體層堆疊中之各層或選定之層可展現在103與104泊之間的複數黏度。
受體基材40實例包括玻璃,如:顯示器素玻璃(例如:背板素玻璃)、顯示器蓋玻璃、發光素玻璃、建築玻璃、捲軸玻璃、與撓性玻璃。撓性捲軸玻璃實例為可得自Corning Incorporated之商標名稱WILLOW玻璃。受體基材之其他實例包括金屬,如:金屬零件、金屬片與箔。受體基材之其他實例包括藍寶石、矽、二氧化矽、及碳化矽。許多實施例中,受體基材40為玻璃、石英、或藍寶石。受體基材可包含收集電極(底部電極)、透明傳導氧化物塗層、金屬箔層或塗層、或傳導薄膜塗層(諸如薄金屬膜)、金屬奈米線塗層、傳導聚合物塗層、碳奈米管塗層、石墨烯塗層、或碳黑塗層。其他例示性受體包括支撐晶圓上之半導體材料以及結晶支撐晶圓,諸如結晶矽、結晶氮化鎵、結晶磷化銦、及結晶砷化鎵。受體基材40可為平坦或彎曲。
顯示器背板素玻璃受體基材可選擇性地在該施加層壓轉印膜的受體基材的面上包括緩衝層。緩衝層實例說明於美國專利第
6,396,079號,該案以引用方式併入本文中,如同完整陳述般。緩衝層的一個類型為SiO2薄層,如K.Kondoh等人在J.of Non-Crystalline Solids 178(1994)189-98及T-K.Kim等人在Mat.Res.Soc.Symp.Proc.Vol.448(1997)419-23中之說明,此兩文獻以引用方式併入本文中,如同完整陳述般。
本文所述之轉印膜與方法之一特別優點為對具有大表面積之基材(如:顯示器素玻璃、光伏打玻璃、或建築玻璃)賦予電堆疊之能力。舉例而言,本文所述之轉印膜100具有足夠大維度,足以用於將電堆疊賦予在至少整個大的數位顯示器基材上(例如:對角線55吋之AMOLED HDTV,其維度為寬52吋乘高31.4吋)或光伏打模組,其維度為1米乘1.6米。
前體層堆疊20之各層中之犧牲性材料可被完全烘乾,留下界定電堆疊25之各層之熱安定性材料密緻化層。有些實施例中,熱安定性材料密緻化層可完全或部分融入類似玻璃之材料中。圖2A至圖2C為在烘乾步驟期間電前體層堆疊20密緻化之圖解。在一些實施例中,密緻化層非完全密緻且具有一些多孔性。密緻化層可具有小於70%多孔性、或小於60%多孔性、或小於50%多孔性、或小於40%多孔性、或小於30%多孔性、或小於20%多孔性、或小於10%多孔性、或小於5%多孔性。密緻化層可具有大於70%多孔性、或大於60%多孔性、或大於50%多孔性、或大於40%多孔性、或大於30%多孔性、或大於20%多孔性、或大於10%多孔性、或大於5%多孔性。
若需要,隨後可將液體或流體注入至多孔層中。液體可為電活性液體且包括電解質、離子液體、液晶、用於聚合物分散液晶中之單體分散液晶、溶劑中之電活性染料、顏料分散液、或磁性流體等。
圖2說明彼此堆疊之三個共同延伸電前體層22、23、及24形成之前體層堆疊20。層22之放大圖繪示成2A,顯示分散於犧牲性材料26中之熱安定性材料21。應理解,層23及24亦包括分散於犧牲性材料中之熱安定性材料(視情況不同於熱安定性材料21)。在許多實施例中,犧牲性材料在形成電前體層堆疊20之各層中為相同種類或相同材料。在其他實施例中,形成各前體層的電前體層具有不同種類或類型的犧牲性材料。熱安定性材料21可以1至75wt%之範圍、或小於75wt%、或小於50wt%、或小於25wt%、或小於10wt%存在於各前體層中。在許多實施例中,熱安定性材料21為無機奈米材料。
圖2B說明電前體層堆疊20,其中犧牲性材料26之一部分經由例如烘乾而移除。層22之放大圖繪示成2B,顯示稍微密緻於犧牲性材料26中之熱安定性材料21。
圖2C說明電堆疊25,其中犧牲性材料26經由例如烘乾而移除。層22之放大圖繪示成2C,顯示經密緻且形成電堆疊25之熱安定性材料21。
形成電堆疊25之層彼此共同延伸或指叉且各層具有小於10微米、或小於5微米、或小於3微米或小於2微米或小於1微米
或在500奈米至2微米之範圍內之均勻厚度。在其他實施例中,形成電堆疊25之層彼此共同延伸或指叉且各層具有小於500奈米或小於250奈米或小於100奈米或在40奈米至500奈米之範圍內之均勻厚度。
圖3為具有埋沒電極及垂直匯流排18、20之多層指叉電極堆疊10之截面示意圖。圖4為具有水平匯流排42、44之多線指叉電極堆疊34之截面示意圖。此等堆疊10、34具有第一主表面及與第一主表面相反之第二主表面,且面內方向(in-plane direction)大體上沿著第一及第二主表面。該等堆疊參考x、y、及z方向描述。x方向為沿堆疊之長度(沿機械方向),y方向為沿堆疊之寬度,且z方向為沿第一與第二主表面之間之距離。
多層指叉電極堆疊10包括沿堆疊10之面內方向在主表面之間與電極層14指叉之電極層12。絕緣層16分離電極層12、14。匯流排18與電極層12於堆疊10之主表面之間的一個位置沿z方向(例如沿堆疊之第一邊緣)電連接且積體化。匯流排20與電極層14於堆疊10之主表面之間的一個位置沿z方向(例如沿與第一邊緣相對(opposing)之堆疊之第二邊緣)電連接且積體化。選用之表層15及17可位於堆疊10之主表面上。
多線指叉電極堆疊34包括在主表面之間沿z方向與電極層38指叉之電極層36。絕緣層40將電極層36、38彼此分離。匯流排44與電極層36於堆疊34之一個主表面上沿面內方向電連接且積
體化,且匯流排42與電極層38於堆疊34之相對主表面上沿面內方向電連接且積體化。
前體層為最終電物品之無機層之前驅物。前體層可包括奈米材料及犧牲性材料。在熱製程(亦即,烘乾)之前,前體層為可加工的(例如可擠壓的、可塗布的、低黏度)且可不具備最終電物品之必要電性質。轉移至熱安定性表面之後,在熱烘乾步驟期間烘烤前體層以形成具有所欲物理、化學、及電性質之無機層。轉變可涉及犧牲性黏合劑之解聚合、有機金屬聚合物或配位化合物之分解、奈米粒子之密緻化、有機矽烷之化學低聚合或化學反應等。
最終電堆疊之前體層及/或層係可起如導體、絕緣體、功能電極、電解質、氧化劑、或還原劑之作用。電前體層可經調配、塗布、成層(layered)於堆疊中,且經烘乾以使堆疊內之電前體層之熱安定性組分在烘乾步驟期間密緻化、層疊(stratify)、且物理結合在一起。電前體層之使用允許以小體積裝載加工無機材料(例如次滲透(sub-percolation)濃度之傳導材料),實現諸如多層之熱塑性擠壓之技術。
最終電堆疊之前體層及/或層可為導電的或電絕緣的。在一些實施例中,電前體層堆疊包括具有導電材料之電極前體層及具有電絕緣材料之介電前體層。
在一些實施例中,電前體層堆疊包括具有負電極材料之負電極前體層、具有正電極材料之正電極前體層及具有電解質材料之
電解質前體層。電解質前體層設置於負電極前體層與正電極前體層之間。
在一些實施例中,電前體層堆疊包括具有電致變色材料之複數個電致變色前體層及具有電解質材料之電解質前體層。
在進一步實施例中,前體層堆疊包括與第二複數個電前體層指叉之第一複數個電前體層。
前體層調配物之一個說明性實例包含犧牲性熱塑性塑膠或熱固物(例如聚環氧乙烷、伸烷基聚碳酸酯、或光固化丙烯酸)、無機奈米粒子(例如BaTiO3)、及有機矽烷(例如低聚甲基矽倍半氧烷)。在烘乾期間,移除犧牲性黏合劑,將粒子密緻化,且有機矽烷仍為無機黏合劑以向鈦酸鋇層提供機械積體性(mechanical integrity)。
前體層調配物之另一說明性實例包含無機奈米粒子及有機金屬聚合物或配位化合物(例如金屬聚乙亞胺或聚羧酸化聚合物之金屬鹽)。聚合物經歷分解,且取決於分解期間之氣氛,可轉變成金屬氧化物、金屬氮化物、或金屬碳化物。就此而言,有機金屬聚合物具有犧牲性(碳骨架)及無機(錯合金屬)組分兩者。此類型系統係於“polymer assisted deposition”(G.F.Zou等人,Chem.Soc.Rev.2013,42,439-449)中探討。該等系統尤其可用於原位(in situ)合成錯合性混合氧化物諸如錫或鋅摻雜銦氧化物及其他透明傳導氧化物。
前體層調配物之又另一說明性實例包含犧牲性聚合物、無機奈米粒子、及已知在熱解時產生石墨碳之聚合物(例如間苯二酚甲醛低聚物)。若無機奈米粒子為碳奈米管,則犧牲性聚合物在分解
期間移除且間苯二酚甲醛低聚物及奈米管轉變成傳導碳層複合物。材料之其他組合為可能的。舉例而言,會期望藉由於具有石墨碳前驅物及犧牲性熱塑性塑膠之調配物中包括金屬奈米線或奈米粒子來提高無機層之傳導性。加熱移除犧牲性聚合物之後,所得層可為石墨碳及傳導奈米粒子或傳導奈米線之複合物。
可將具有熱塑性特徵之前體層調配物擠壓、模製、或(若可溶)溶劑澆鑄。具有熱固性特徵之前體層調配物可藉由溶劑澆鑄接著溶劑移除及熱或光化固化步驟施加。此等方法中之各者與卷對卷加工相容。可藉由適當技術獲得多層,該等技術包括多層擠壓(例如,US6827886)或多線擠壓(例如,US13/775415)、多層塗布、或滑動塗布。前體層指叉為可能的(例如,US13/775415)。指叉之類型可取決於例如電前體層堆疊之所欲性能或應用。舉例而言,指叉電前體層間重疊之量亦可藉由增大或減小重疊之量、或藉由有目的地使指叉前體層之個別元件光滑或尖銳而變化,以影響電堆疊之性能。
舉例而言,本文所述之電堆疊可用以產生大面積、無膜、耐久性的無機電裝置,諸如電致變色窗或裝置、光伏打裝置、電容器、超級電容器、電池、電阻器、致動器、及能量捕獲器。
利用熱安定性材料以形成電堆疊中之層。熱安定性材料可經密緻化或化學轉變以形成無機電堆疊。熱安定性材料包括例如:熱安定性分子物種。應理解,熱安定性材料可包括前驅物材料,其係
可在移除犧牲性材料之過程中(如:在「烘乾」或熱分解過程中)實質上保留完整之材料或可轉變成該材料之材料。熱安定性材料包括無機奈米粒子、電致變色材料、光致變色材料、傳導材料、介電材料、及電池材料。
在許多實施例中,熱安定性材料包括無機奈米粒子或奈米材料。此等無機奈米粒子或奈米材料可呈各種不同大小及形狀。無機奈米粒子或奈米材料可具有小於約1000nm、小於約750nm、小於約500nm、小於約250nm、小於約100nm、小於約50nm、或小於約35nm之平均粒子直徑。無機奈米粒子或奈米材料可具有約3nm至約50nm、或約3nm至約35nm、或約5nm至約25nm之平均粒子直徑。若該等奈米粒子凝集,該凝集物之最大截面維度可在任何此等範圍內,亦可超過約100nm。可使用各種不同形狀之無機奈米粒子或奈米材料,如:球形、棒形、片形、管形、線形(wire)、立方體形、圓錐形、四面體形、及類似形狀。
所選之奈米材料可賦予各種不同光學性質(亦即折射率、雙折射率)、電性質(例如:導電性)、機械性質(例如:堅韌性、鉛筆硬度、抗刮性)或此等性質之組合。
合適之無機奈米粒子或奈米材料實例包括金屬奈米粒子或其各別氧化物,包括元素鋯(Zr)、鈦(Ti)、鉿(Hf)、鋁(Al)、鐵(Fe)、釩(V)、銻(Sb)、錫(Sn)、金(Au)、銅(Cu)、鎵(Ga)、銦(In)、鉻(Cr)、錳(Mn)、鈷(Co)、鎳(Ni)、鋅(Zn)、釔(Y)、鈮(Nb)、鉬(Mo)、鎝(Te)、釕(Ru)、銠(Rh)、鈀(Pd)、銀(Ag)、鎘(Cd)、鑭(La)、鉭
(Ta)、鎢(W)、錸(Rh)、鋨(Os)、銥(Ir)、鉑(Pt)、鈰(Ce)、鍶(Sr)與其任何組合(例如:銦錫氧化物)。
合適的無機奈米粒子或奈米材料之其他實例包括氟化物諸如氟化鎂、氟化鈣、氟化鉛、氟化鋁及氟化鋇。其他合適之無機奈米粒子實例包括:氮化物,如:氮化矽。其他合適之無機奈米粒子或奈米材料實例包括:鈦酸鹽,如:鈦酸鍶、鈦酸鋇與鈦酸鋇鍶。其他合適之無機奈米粒子實例包括:混合之金屬氧化物(例如:矽酸鋁)、混合之金屬氟化物、混合之氮化物與混合之金屬鈦酸鹽。
其他合適無機奈米粒子或奈米材料實例包括已知作為半導體之元素與合金,及其各別氧化物,如:矽(Si)、鍺(Ge)、碳化矽(SiC)、鍺化矽(SiGe)、碳(例如碳奈米管或石墨烯奈米片(nanoplatelet))、氮化鋁(AlN)、磷化鋁(AlP)、氮化硼(BN)、碳化硼(B4C)、銻化鎵(GaSb)、磷化銦(InP)、氮砷化鎵(GaAsN)、磷砷化鎵(GaAsP)、氮砷化銦鋁(InAlAsN)、氧化鋅(ZnO)、硒化鋅(ZnSe)、硫化鋅(ZnS)、碲化鋅(ZnTe)、硒化汞鋅(HgZnSe)、硫化鉛(PbS)、碲化鉛(PbTe)、硫化錫(SnS)、碲化鉛錫(PbSnTe)、碲化鉈錫(Tl2SnTe5)、磷化鋅(Zn3P2)、砷化鋅(Zn3As2)、銻化鋅(Zn3Sb2)、碘化鉛(II)(PbI2)、及氧化亞銅(I)(Cu2O)。
合適之無機奈米粒子或奈米材料實例包括已知為稀土元素之元素及其氧化物,如:氧化鑭(La2O8)、氧化鈰(CeO2)、氧化鐠(Pr6O11)、氧化釹(Nd2O3)、氧化釤(Sm2O3)、氧化銪(Eu2O3)、氧化釓
(Gd2O3)、氧化鋱(Tb4O7)、氧化鏑(Dy2O3)、氧化鈥(Ho2O3)、氧化鉺(Er2O3)、氧化銩(Tm2O3)、氧化鐿(Yb2O3)與氧化鎦(Lu2O3)。
電致變色材料包括例如:多金屬氧酸鹽(例如PW12O40 3-、SiW12O40 4-、W10O32 3-、[Eu-(H2O)P5W30O11]12-;氧化鎢(WO3);氧化銥(IrO2,Ir(OH)3);氧化鎳(NiOx,NiOxHy);氧化鉬(MoO3);氧化釩(V2O5);氧化鈮(Nb2O5);或氧化鈦(TiO2))。亦包括以下過渡金屬氧化物:氧化錳、氧化鈷、氧化銠、及氧化釕以及普魯士藍(Prussian Blue)(Fe(III)4[Fe(II)(CN)6]3或KFe(III)Fe(II)(CN)6)及金屬酞青(具有足夠熱安定性之金屬酞青)。
介電材料包括例如:二氧化鈦;鈦酸鍶;鈦酸鋇鍶;鈦酸鋇;鈦酸鉛鋯;鈦酸鈣銅;二氧化矽;矽酸鉿;矽酸鋯;二氧化鉿;及二氧化鋯。
電池中正電極材料包括例如:LiMO2或LiMS2,其中M可為Ti、V、Cr、Mn、Fe、Co、Ni、Mo及其混合物;LiM2O4,M可為Ti、V、Cr、Mn、Fe、Co、Ni、Mo及其混合物;LiMPO4,M可為Ti、V、Cr、Mn、Fe、Co、Ni、及其混合物;Li2MnO3與LiMO2之固溶體。
電池中負電極材料包括例如Li4Ti5O12(鋰鈦氧化物);天然或合成石墨;Si或Si/石墨複合物;Si合金(包括Li、Mg、Al、B、P、S、O、C、Ti、Ti、V、Cr、Mn、Fe、Co、Ni、Mo、Zn、Zr中之一或多者;及含有Ge、Sn、Pb、B、Al、As及Sb中之至少一或多者之其他合金。
電極材料為電絕緣的但允許離子(諸如Li離子)輸運穿過該等材料。固態電解質材料包括例如LiSICONs(諸如LiPON、Li14Zn(GeO4)4、Li0.36Si0.6P0.4O4),及玻璃(諸如Li2S-P2S5、Li2S-SiS2-Li3PO4),及玻璃-陶瓷(諸如Li7P3S11、Li(1+x)Ge(2-x)Alx(PO4)3),及陶瓷(諸如Li-β-Al2O3、Li3N、摻雜Li3N、La0.5Li0.5TiO3),及硫代磷酸鹽(諸如Li3.25Ge0.25P0.75S4、Li10GeP2S12)。
犧牲性材料為能夠以烘乾或其他方式移除同時留下實質上完整的熱安定性材料的材料。犧牲性材料包括例如在各前體層內之犧牲性材料,以及取決於轉印膜之建構而視需要選用之犧牲性可釋離層及視需要選用之犧牲性黏著劑層。在許多實施例中,犧牲性材料係由可聚合組成物製成。在許多實施例中,犧牲性材料係以25至95wt%之範圍、或至少30wt%、或至少40wt%、或至少50wt%存在於各電前體層中。
有用的可聚合組成物包含在所屬技術領域中係習知的可固化官能基,譬如環氧基、烯丙氧基、(甲基)丙烯酸酯基、環氧化物、乙烯基、羥基、羧酸、胺基、酚、醛、桂皮酸酯、烯、炔、烯屬不飽和基團、乙烯醚基、及其任何衍生物及任何化學相容組合。
用於製備犧牲性材料之可聚合組成物可含有單官能性或多官能性(例如,二官能性、三官能性、及四官能性)之可固化部
分。可用於製備犧牲性聚合物材料之合適單官能性可聚合前驅物之實例包括苯乙烯、α-甲基苯乙烯、經取代之苯乙烯、乙烯基酯、乙烯基醚、(甲基)丙烯酸辛酯、壬基酚乙氧基化物(甲基)丙烯酸酯(nonylphenol ethoxylate(meth)acrylate)、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸2-(2-乙氧基乙氧基)乙酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸β-羧基乙酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸三級丁酯、環脂族環氧化物、α-環氧化物、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十二酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸己酯、(甲基)丙烯酸、N-乙烯基己內醯胺、(甲基)丙烯酸十八酯、羥基官能性(甲基)丙烯酸己內酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸羥基丙酯、(甲基)丙烯酸羥基異丙酯、(甲基)丙烯酸羥基丁酯、(甲基)丙烯酸羥基異丁酯、(甲基)丙烯酸四氫呋喃甲酯、及其任何組合。
合適多官能性可聚合前驅物之實例包括二(甲基)丙烯酸乙二醇酯(ethyl glycol di(meth)acrylate)、二(甲基)丙烯酸己二醇酯、二(甲基)丙烯酸三乙二醇酯、二(甲基)丙烯酸四乙二醇酯、三(甲基)丙烯酸三羥甲基丙烷酯、三(甲基)丙烯酸甘油酯、三(甲基)丙烯酸新戊四醇酯、四(甲基)丙烯酸新戊四醇酯、二(甲基)丙烯酸新戊二醇酯、雙酚A二(甲基)丙烯酸酯、聚(1,4-丁二醇)二(甲基)丙烯酸酯、上文所列舉之材料之任何經取代、乙氧基化或丙氧基化變型、或其任何組合。
該等聚合反應通常會導致形成三維「交聯(crosslinked)」大分子網絡,在本領域中亦被稱為負型光阻,如Shaw
等人在“Negative photoresists for optical lithography,”IBM Journal of Research and Development(1997)41,81-94中所回顧。該網絡的形成可經由共價、離子或氫鍵結產生,或透過物理交聯機制如鏈纏結產生。該等反應亦可經由一或多個中間物種來起始,例如自由基產生型光起始劑、光敏感劑、光酸產生劑、光鹼產生劑或熱酸產生劑。使用的固化劑種類取決於所使用的可聚合前驅物,且取決於用以固化可聚合前驅物的輻射波長。適合的市售自由基產生型光起始劑的實例包括二苯基酮、安息香醚、以及醯基膦光起始劑,如來自Ciba Specialty Chemicals,Tarrytown,NY以商標名稱「IRGACURE」與「DAROCUR」販售者。其他例示性光起始劑包括2,2-二甲氧基-2-苯基苯乙酮(DMPAP)、2,2-二甲氧基苯乙酮(DMAP)、氧蔥酮(xanthone)、以及9-氧硫(thioxanthone)。
共起始劑以及胺增效劑亦可被包括以提高固化率。以可聚合前驅物的整個重量計,在交聯基質中之固化劑的適合濃度範圍從大約1wt%至大約10wt%,特別適合濃度範圍從大約1wt%至大約5wt%。
可用作犧牲性材料之其他材料包括聚乙烯醇(PVA)、聚環氧乙烷(PEO)、聚乙亞胺(PEI)、乙基纖維素、甲基纖維素、聚降莰烯、聚(甲基甲基丙烯酸酯(PMMA)、聚(乙烯基丁醛)、聚(環己烯碳酸酯)、聚(環己烯丙烯)碳酸酯、聚(乙烯碳酸酯)、聚(丙烯碳酸酯)及其他脂族聚碳酸酯、及其任何共聚物或摻合物、及R.E.Mistler及E.R.Twiname,Tape Casting:Theory and Practice,American Ceramic
Society,2000,chapter 2,section 2.4,“Binders”中所述之其他材料。此等材料有許多商業來源。這些材料一般能夠經由溶解或經由熱分解或燃燒之熱分解作用(thermal decomposition)來輕易移除。加熱通常為許多製造製程的一部分,因此犧牲性材料的移除可在現存的加熱步驟中完成。因此,經由熱分解或燃燒的熱分解作用為更佳的移除方法。
較佳的是犧牲性材料具有某些性質。該材料較佳係能經由滑動塗布、擠壓、刮刀塗布、溶劑塗布、澆鑄及固化、或其他典型塗布方法塗布至基材上。較佳的是,該材料在室溫下為固體。對於熱塑性犧牲性材料而言,較佳的是工作溫度(定義為從玻璃轉移溫度(Tg)或該材料展現適於擠壓之黏度之溫度範圍,到熱分解作用開始(Tdec)的溫度之間)的範圍夠大,諸如至少50至100℃,以允許其擠壓成多層膜之一部分。在擠壓操作中用於製作膜之聚合物在100/sec之剪切速率下,必須展現在103與104泊之間的範圍內之複數黏度。通常,此等聚合物具有足夠高的分子量以提供0.4dl/g之固有黏度,如在30℃下按照ASTM D4603-91使用苯酚/鄰二氯苯之60/40混合物作為溶劑所量測。
熱分解後具有低灰份或低總殘餘物之材料優於該些留下較高含量殘餘物之材料。留在基材上之殘餘物可不利地影響最終產品之電性質及/或光學性質,諸如導電性、透明度或顏色。因為所欲者為使最終產品中此等性質之任何改變最小化,因此小於1000ppm之殘餘物含量係較佳。小於500ppm之殘餘物含量更佳,且低於50ppm之殘餘物含量最佳。
用語「完全烘乾(cleanly baked out)」意謂,犧牲性層可藉由熱分解、燃燒、昇華、或蒸發移除而不留下實質量的殘餘物材料諸如灰份。上文提供較佳殘餘物含量之實例,但取決於具體應用,可使用不同的殘餘物含量。
犧牲性黏著劑層可用任何能強化轉印膜對受體基材黏性但不會實質上不利影響轉印膜之性能的材料實現。此層亦可稱為助黏層。該犧牲性黏著劑層似乎會促進受體基材與烘乾熱安定性結構之間之最終永久鍵結。犧牲性黏著劑層可使用本文所述方法完全烘乾。
適用之犧牲性黏著劑或助黏材料包括光阻(正性與負性)、自組裝之單層、矽烷偶合劑、與巨分子。在一些實施例中,矽倍半氧烷可作用為助黏層。其它例示性材料可包括苯并環丁烯、聚醯亞胺、聚醯胺、聚矽氧、聚矽氧烷、聚矽氧混合聚合物、(甲基)丙烯酸酯和其它經各式反應基官能化的矽烷或巨分子,諸如環氧化物、環硫化物、乙烯基、羥基、烯丙氧基、(甲基)丙烯酸酯、異氰酸酯、氰酯、乙醯氧基、(甲基)丙烯醯胺、硫醇、矽烷醇、羧酸、胺基、乙烯醚、酚、醛、烷基鹵化物、桂皮酸酯、疊氮化物、氮丙啶、烯烴、胺甲酸酯、醯亞胺、醯胺、炔烴以及該等基團的任何衍生物或組合。
因此,電多層層壓轉印膜之實施例係經揭示。
在此特以引用之方式將本文所引述之所有參考文件以及出版品之全文明示納入本揭露中,除非其內容可能與本揭露直接抵
觸。雖在本文中是以具體實施例進行說明及描述,但所屬技術領域中具有通常知識者將瞭解可以各種替代及/或均等實施來替換所示及所描述的具體實施例,而不偏離本揭露的範疇。本申請案意欲涵括本文所討論之特定具體實施例的任何調適形式或變化形式。因此,本揭露意圖僅受限於申請專利範圍及其均等者。本文所揭示之實施例僅為說明性目的而非限制性。
2‧‧‧箭頭
4‧‧‧箭頭
6‧‧‧箭頭
8‧‧‧箭頭
11‧‧‧聚合物支撐層/載體層
13‧‧‧可釋離表面/離型材料
20‧‧‧前體層堆疊/電前體層堆疊/垂直匯流排/匯流排
22‧‧‧層/電前體層/前體層
23‧‧‧層/電前體層/前體層
24‧‧‧層/電前體層/前體層
25‧‧‧電堆疊
29‧‧‧犧牲性黏著劑層/犧牲性黏著劑
40‧‧‧受體基材/絕緣層
50‧‧‧圖解製程流程圖
100‧‧‧轉印膜
Claims (31)
- 一種轉印膜,其包含:形成一電前體層堆疊之複數個共同延伸電前體層,至少選定之電前體層或各電前體層獨立地包含至少25wt%犧牲性材料與一熱安定性材料,且具有小於25微米之一均勻厚度。
- 一種轉印膜,其包含:形成一電前體層堆疊之複數個共同延伸電前體層,當加熱至至少選定之前體層或各前體層之Tg與Tdec之間的一溫度且在100/s之一剪切速率下,至少選定之前體層或各前體層獨立地展現在103與104泊之間的一複數黏度(complex viscosity)。
- 一種轉印膜,其包含:形成一電前體層堆疊之複數個指叉(interdigitated)電前體層,至少選定之電前體層或各電前體層獨立地包含至少25wt%犧牲性材料與一熱安定性材料,且具有小於25微米之一均勻厚度。
- 一種轉印膜,其包含:形成一電前體層堆疊之複數個指叉(interdigitated)電前體層,當加熱至至少選定之前體層或各前體層之Tg與Tdec之間的一溫度且在100/s之一剪切速率下,至少選定之前體層或各前體層獨立地展現在103與104泊之間的一複數黏度(complex viscosity)。
- 如請求項1之轉印膜,其中至少選定之電前體層為導電的。
- 如請求項1之轉印膜,其中各電前體層或至少選定之電前體層包含小於75wt%或小於50wt%無機奈米材料。
- 如請求項1之轉印膜,其進一步包含具有一可釋離表面之一聚合物支撐層,該可釋離表面接觸該電前體層堆疊。
- 如請求項1之轉印膜,其中該電前體層堆疊包含含有導電材料之一電 極前體層及含有電絕緣材料之一介電前體層。
- 如請求項1之轉印膜,其中該電前體層堆疊包含含有負電極材料之一負電極前體層、含有正電極材料之一正電極前體層及含有電解質材料之一電解質前體層,且該電解質前體層設置於該負電極前體層與該正電極前體層之間。
- 如請求項1之轉印膜,其中該電前體層堆疊包含含有電致變色(electrochromic)材料之複數個電致變色前體層及含有一電解質材料之一電解質前體層。
- 如請求項1之轉印膜,其中該前體層堆疊包含一第一複數個電前體層,其與一第二複數個電前體層指叉。
- 如請求項1之轉印膜,其中當加熱至該電前體層堆疊中之各電前體層之Tg與Tdec之間的一溫度且在100/s之一剪切速率下,該電前體層堆疊中之各電前體層獨立地展現在103與104泊之間的一複數黏度。
- 如請求項1之轉印膜,其中至少選定之電前體層包含具有小於1000nm或小於750nm或小於500nm或小於250nm或小於100nm之一平均大小之無機奈米材料。
- 如請求項1之轉印膜,其中犧牲性材料包含一有機聚合物材料。
- 如請求項1之轉印膜,其中該犧牲性材料係以25至95wt%之一範圍、或至少30wt%、或至少40wt%、或至少50wt%存在於各電前體層中。
- 如請求項1之轉印膜,其中該電前體層堆疊包含至少10個、至少25個或至少50個電前體層。
- 如請求項1之轉印膜,其中至少選定之電前體層包含無機奈米粒子及一有機金屬聚合物或配位化合物。
- 一種方法,其包含:將如請求項1之一轉印膜層壓至一受體基材;烘乾犧牲性材料以形成一電堆疊。
- 如請求項18之方法,其中該烘乾步驟形成至少一個多孔層且進一步包含將該多孔層用一電活性液體注入。
- 如請求項19之方法,其中該電活性液體包含一電解質、一電致變色染料、一液晶、一離子物種或一磁性流體。
- 如請求項18之方法,其中該受體基材包含玻璃、石英或藍寶石。
- 如請求項18之方法,其中該受體基材包含一導電層。
- 如請求項18之方法,其中該電堆疊形成一電致變色裝置之至少一部分。
- 如請求項18之方法,其中該電堆疊形成一電池之至少一部分。
- 如請求項18之方法,其中該電堆疊形成一電容器之至少一部分。
- 如請求項18之方法,其中該受體基材包含一底部電極。
- 如請求項18之方法,其進一步包含將一頂部電極施加於該電堆疊上。
- 一種形成一轉印膜之方法,其包含:沉積形成一電前體層堆疊之複數個指叉電前體層,各前體層獨立地包含一犧牲性材料與一熱安定性材料,且具有小於25微米之一均勻厚度。
- 一種形成一轉印膜之方法,其包含:共同擠壓複數個指叉電前體層以形成一電前體層堆疊,各前體層獨立地包含一犧牲性材料及一熱安定性材料。
- 如請求項28或請求項29之方法,其中當加熱至該電前體層堆疊中之各電前體層之Tg與Tdec之間的一溫度且在100/s之一剪切速率下,該電前體層堆疊中之各電前體層獨立地展現在103與104泊之間的一複數黏度。
- 如請求項28或請求項29之方法,其中該電前體層堆疊係形成於一聚合物支撐基材之一可釋離表面上。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462042481P | 2014-08-27 | 2014-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201618961A true TW201618961A (zh) | 2016-06-01 |
Family
ID=54249564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104127976A TW201618961A (zh) | 2014-08-27 | 2015-08-26 | 電多層層壓轉印膜 |
Country Status (8)
Country | Link |
---|---|
US (2) | US10414145B2 (zh) |
EP (1) | EP3186082B1 (zh) |
JP (1) | JP2017534479A (zh) |
KR (1) | KR102467762B1 (zh) |
CN (1) | CN106660355B (zh) |
SG (1) | SG11201701508SA (zh) |
TW (1) | TW201618961A (zh) |
WO (1) | WO2016033211A2 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10294415B2 (en) | 2014-06-09 | 2019-05-21 | iGlass Technology, Inc. | Electrochromic composition and electrochromic device using same |
US10344208B2 (en) | 2014-06-09 | 2019-07-09 | iGlass Technology, Inc. | Electrochromic device and method for manufacturing electrochromic device |
CN109817469A (zh) * | 2017-11-20 | 2019-05-28 | 北京纳米能源与系统研究所 | 超级电容器、能源包、自充电能源包及其制备方法 |
JP2019113579A (ja) * | 2017-12-20 | 2019-07-11 | 株式会社カネカ | クロミックデバイスおよびクロミックデバイスの製造方法 |
KR102215931B1 (ko) * | 2018-09-05 | 2021-02-15 | 코람데오테크 주식회사 | 니트로기에 대한 민감도 및 광학적 분석용 센서 제조 방법 |
CN109745569B (zh) * | 2018-10-12 | 2021-10-26 | 南京大学 | 基于电致变色材料的h2s激活型探针及其生物应用 |
CN111293364B (zh) * | 2018-12-10 | 2021-03-30 | 张家港市国泰华荣化工新材料有限公司 | 一种非水电解液及锂离子电池 |
JP2022020286A (ja) * | 2020-07-20 | 2022-02-01 | 株式会社ディスコ | 保護部材形成装置で用いるシート、及び保護部材形成方法 |
CN220711937U (zh) * | 2020-11-17 | 2024-04-02 | 3M创新有限公司 | 导电多层叠堆和包括导电多层叠堆的中空垫圈 |
CN113277744B (zh) * | 2021-05-28 | 2023-01-24 | 哈尔滨工业大学 | 一种用溶剂调控氧化镍电致变色薄膜形貌的方法 |
JP2023095773A (ja) * | 2021-12-24 | 2023-07-06 | 国立研究開発法人産業技術総合研究所 | 共振回路、並びにインダクタおよびキャパシタの製造方法 |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT610737A (zh) | 1955-11-18 | 1900-01-01 | ||
JPS4821136B1 (zh) | 1969-02-20 | 1973-06-26 | ||
US4737577A (en) | 1986-12-31 | 1988-04-12 | Minnesota Mining And Manufacturing Company | Method for removing monomer from an acrylate adhesive by reaction with a scavenger monomer |
US4949005A (en) | 1988-11-14 | 1990-08-14 | General Electric Company | Tantala-silica interference filters and lamps using same |
US5208121A (en) | 1991-06-18 | 1993-05-04 | Wisconsin Alumni Research Foundation | Battery utilizing ceramic membranes |
US5849162A (en) | 1995-04-25 | 1998-12-15 | Deposition Sciences, Inc. | Sputtering device and method for reactive for reactive sputtering |
JP3444053B2 (ja) | 1995-10-13 | 2003-09-08 | ソニー株式会社 | 薄膜半導体装置 |
US5976424A (en) | 1996-07-31 | 1999-11-02 | Minnesota Mining And Manufacturing Company | Method for making multilayer optical films having thin optical layers |
US6808658B2 (en) | 1998-01-13 | 2004-10-26 | 3M Innovative Properties Company | Method for making texture multilayer optical films |
US6177130B1 (en) | 1998-03-02 | 2001-01-23 | Minnesota Mining And Manufacturing Company | Method of preparing lithiated vanadium oxide-coated substrates of optical quality |
US6399672B1 (en) | 1999-06-02 | 2002-06-04 | Sartomer Technologies Co., Inc. | Oil soluble metal-containing compounds, compositions and methods |
US6376590B2 (en) | 1999-10-28 | 2002-04-23 | 3M Innovative Properties Company | Zirconia sol, process of making and composite material |
AU2001241807A1 (en) | 2000-04-07 | 2001-10-23 | Eric Baer | Polymer 1d photonic crystals |
JP3668478B2 (ja) | 2000-07-06 | 2005-07-06 | 松下電器産業株式会社 | 膜電極接合体の製造方法及び固体高分子型燃料電池の製造方法 |
US6950220B2 (en) | 2002-03-18 | 2005-09-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
US6849558B2 (en) | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US7294298B2 (en) | 2002-07-24 | 2007-11-13 | Tdk Corporation | Functional film for transfer having functional layer, object furnished with functional layer and process for producing the same |
US7064897B2 (en) | 2002-12-31 | 2006-06-20 | 3M Innovative Properties Company | Optical polarizing films with designed color shifts |
JP4310685B2 (ja) * | 2003-09-03 | 2009-08-12 | セイコーエプソン株式会社 | 転写装置 |
JP2005144876A (ja) * | 2003-11-17 | 2005-06-09 | Toyo Kohan Co Ltd | 多層樹脂フィルム、樹脂被覆金属板、多層樹脂フィルムの製造方法、および樹脂被覆金属板の製造方法 |
KR100649580B1 (ko) | 2003-12-15 | 2006-11-28 | 삼성전기주식회사 | 스핀코팅에 의한 적층세라믹 커패시터의 제조방법 및적층세라믹 커패시터 |
US7019905B2 (en) | 2003-12-30 | 2006-03-28 | 3M Innovative Properties Company | Multilayer reflector with suppression of high order reflections |
EP1780007B1 (en) | 2004-08-06 | 2018-10-17 | Toyo Kohan Co., Ltd. | Multilayer resin film, resin-coated metal plate, multilayer resin film producing method, and resin-coated metal plate producing method |
US20060068128A1 (en) | 2004-09-30 | 2006-03-30 | Eastman Kodak Company | Optical films and process for making them |
US7241437B2 (en) | 2004-12-30 | 2007-07-10 | 3M Innovative Properties Company | Zirconia particles |
KR100631929B1 (ko) | 2005-02-15 | 2006-10-04 | 삼성전자주식회사 | 신호 딜레이 조절부를 갖는 반도체 메모리 장치 |
JP4821136B2 (ja) | 2005-03-01 | 2011-11-24 | 大日本印刷株式会社 | 触媒層転写シートの製造装置、膜・触媒層接合体の製造装置、触媒層転写シートの製造方法、及び膜・触媒層接合体の製造方法 |
US20060269762A1 (en) | 2005-03-02 | 2006-11-30 | Pulugurtha Markondeya R | Reactively formed integrated capacitors on organic substrates and fabrication methods |
US7510951B2 (en) * | 2005-05-12 | 2009-03-31 | Lg Chem, Ltd. | Method for forming high-resolution pattern with direct writing means |
US20070047080A1 (en) | 2005-08-31 | 2007-03-01 | 3M Innovative Properties Company | Methods of producing multilayer reflective polarizer |
US7508130B2 (en) | 2005-11-18 | 2009-03-24 | Eastman Kodak Company | OLED device having improved light output |
ITMI20060094A1 (it) | 2006-01-20 | 2007-07-21 | Alice Engineering | Pellicola trasferibile per il tivestimento di superfici procedimento per la sua realizzazione e procedimento di applicazione |
KR100690930B1 (ko) * | 2006-05-03 | 2007-03-09 | 한국기계연구원 | 깊은 제거를 이용하여 원하는 패턴 두께 혹은 높은종횡비를 가지는 고해상도 패턴 형성 방법 |
DE202007018948U1 (de) | 2006-07-18 | 2009-12-31 | University Of Southern California, Los Angeles | Elektroden mit Nanoröhrchen für organische optoelektronische Einrichtung |
KR20090068236A (ko) | 2006-09-08 | 2009-06-25 | 메사추세츠 인스티튜트 오브 테크놀로지 | 자동화된 층상 분무 기법 |
CA2663281A1 (en) * | 2006-09-12 | 2008-03-20 | University Of Florida Research Foundation, Inc. | Highly accessible, nanotube electrodes for large surface area contact applications |
ES2296533B1 (es) | 2006-09-22 | 2009-04-01 | Consejo Superior Investig. Cientificas | Procedimiento de preparacion de multicapas con estructura mesoporosa ordenada, material asi obtenido y utilizacion. |
KR100849994B1 (ko) | 2006-12-19 | 2008-08-04 | 한국생산기술연구원 | 고체산화물 연료전지의 단위전지 제조용 가압장치 및 이를이용한 제조방법 |
ES2304104B1 (es) | 2007-02-23 | 2009-08-25 | Consejo Superior De Investigaciones Cientificas | Estructura multicapa formada por laminas de nanoparticulas con propiedades de cristal fotonico unidimensional, procedimiento para su fabricacion y sus aplicaciones. |
US8446666B2 (en) | 2009-05-18 | 2013-05-21 | Toyota Motor Engineering & Manufacturing North America, Inc. | UV-reflective structural color |
US8313798B2 (en) | 2009-05-18 | 2012-11-20 | Toyota Motor Engineering & Manufacturing North America, Inc. | Structural colors having UV reflectance via spray layer-by-layer processing |
US20100075136A1 (en) | 2008-09-19 | 2010-03-25 | Kevin Sun Song | Functional Nanofilms |
JP5330539B2 (ja) | 2008-12-15 | 2013-10-30 | スリーエム イノベイティブ プロパティズ カンパニー | 表面処理剤を含む高屈折率無機酸化物ナノ粒子、重合性樹脂組成物、及び物品 |
EP2373725A4 (en) | 2008-12-22 | 2017-07-26 | 3M Innovative Properties Company | Multilayer optical films having side-by-side mirror/polarizer zones |
EP2237346B1 (en) * | 2009-04-01 | 2017-08-09 | The Swatch Group Research and Development Ltd. | Electrically conductive nanocomposite material comprising sacrificial nanoparticles and open porous nanocomposites produced thereof |
CN101515651B (zh) | 2009-03-16 | 2011-01-05 | 中国科学技术大学 | 一种固体氧化物燃料电池的制备方法 |
US20120025182A1 (en) | 2009-04-03 | 2012-02-02 | Sharp Kabushiki Kaisha | Donor substrate, process for production of transfer film, and process for production of organic electroluminescent element |
EP2244033A1 (en) | 2009-04-24 | 2010-10-27 | Ronda S.P.A. | Reflecting panel with dielectric reflective coating and method for the manufacturing thereof |
US20130011608A1 (en) * | 2010-01-13 | 2013-01-10 | Wolk Martin B | Optical films with microstructured low refractive index nanovoided layers and methods therefor |
WO2011119387A2 (en) | 2010-03-26 | 2011-09-29 | 3M Innovative Properties Company | Textured film and process for manufacture thereof |
KR101821841B1 (ko) | 2010-06-30 | 2018-01-24 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 다층 광학 필름 |
WO2012109494A2 (en) | 2011-02-09 | 2012-08-16 | Kinestral Technologies, Inc. | Electrochromic multi-layer devices with spatially coordinated switching |
JP2013062242A (ja) | 2011-08-24 | 2013-04-04 | Sumitomo Metal Mining Co Ltd | 薄膜固体二次電池用の薄膜の製造方法とそれに用いる塗布液、及び薄膜、並びにそれを用いた薄膜固体二次電池 |
WO2013052927A2 (en) | 2011-10-07 | 2013-04-11 | Svaya Nanotechnologies, Inc. | Broadband solar control film |
KR20150017710A (ko) | 2012-05-03 | 2015-02-17 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 내구성 태양광 미러 필름 |
US9780335B2 (en) * | 2012-07-20 | 2017-10-03 | 3M Innovative Properties Company | Structured lamination transfer films and methods |
JP5711713B2 (ja) | 2012-10-01 | 2015-05-07 | 住友電気工業株式会社 | 多層熱回復物品 |
US9829604B2 (en) | 2012-12-20 | 2017-11-28 | 3M Innovative Properties Company | Method of making multilayer optical film comprising layer-by-layer self-assembled layers and articles |
US9119289B2 (en) | 2013-02-25 | 2015-08-25 | 3M Innovative Properties Company | Film constructions for interdigitated electrodes with bus bars and methods of making same |
US20140242343A1 (en) * | 2013-02-27 | 2014-08-28 | 3M Innovative Properties Company | Lamination transfer films for forming embedded nanostructures |
CN105814155A (zh) | 2013-12-09 | 2016-07-27 | 3M创新有限公司 | 可固化倍半硅氧烷聚合物、组合物、制品和方法 |
US9586385B2 (en) | 2014-08-27 | 2017-03-07 | 3M Innovative Properties Company | Inorganic multilayer lamination transfer films |
-
2015
- 2015-08-26 US US15/505,984 patent/US10414145B2/en not_active Expired - Fee Related
- 2015-08-26 JP JP2017511283A patent/JP2017534479A/ja active Pending
- 2015-08-26 KR KR1020177007687A patent/KR102467762B1/ko active IP Right Grant
- 2015-08-26 CN CN201580046001.2A patent/CN106660355B/zh active Active
- 2015-08-26 EP EP15774738.7A patent/EP3186082B1/en active Active
- 2015-08-26 TW TW104127976A patent/TW201618961A/zh unknown
- 2015-08-26 WO PCT/US2015/046990 patent/WO2016033211A2/en active Application Filing
- 2015-08-26 SG SG11201701508SA patent/SG11201701508SA/en unknown
-
2019
- 2019-08-06 US US16/532,618 patent/US11273630B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2016033211A2 (en) | 2016-03-03 |
US20190358947A1 (en) | 2019-11-28 |
CN106660355B (zh) | 2019-10-11 |
WO2016033211A3 (en) | 2016-04-14 |
KR20170049541A (ko) | 2017-05-10 |
KR102467762B1 (ko) | 2022-11-15 |
EP3186082A2 (en) | 2017-07-05 |
CN106660355A (zh) | 2017-05-10 |
JP2017534479A (ja) | 2017-11-24 |
US11273630B2 (en) | 2022-03-15 |
SG11201701508SA (en) | 2017-03-30 |
US20170239931A1 (en) | 2017-08-24 |
EP3186082B1 (en) | 2021-01-27 |
US10414145B2 (en) | 2019-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201618961A (zh) | 電多層層壓轉印膜 | |
TWI425010B (zh) | 電極形成用組成物及使用該組成物形成電極之方法 | |
KR102581899B1 (ko) | 투명 전극 및 이를 포함하는 소자 | |
US20090129004A1 (en) | Electrically conducting and optically transparent nanowire networks | |
CN108803185B (zh) | 一种透明电极及其制备方法及其应用的电致变色器件 | |
TW201435924A (zh) | 於靜電放電(esd)保護具有高熱穩定性之奈米結構透明導體 | |
JP2013189637A (ja) | 補強膜用組成物 | |
EP1190445A1 (en) | Method for manufacturing nanostructured thin film electrodes | |
US20140185187A1 (en) | Electrostatic energy storage device and preparation method thereof | |
CN105453292A (zh) | 光电子器件基板以及包括该光电子器件基板的光电子器件 | |
CN104464955A (zh) | 规模化制备大面积、高性能石墨烯复合透明导电膜的方法 | |
TW200931453A (en) | Transparent conductive material and transparent conductor | |
JP6866104B2 (ja) | 導電体およびその製造方法、ならびにこれを含む素子 | |
TW201243866A (en) | Conductive paste and solar cell | |
EP3195342A1 (en) | Transparent electrode materials and methods for forming same | |
JP2009301727A (ja) | リチウム電池の製法 | |
CN113285025A (zh) | 光电转换元件以及光电转换元件的制造方法 | |
JP7188838B2 (ja) | 有機-無機複合太陽電池および有機-無機複合太陽電池の製造方法 | |
Yu et al. | High performance flexible metal oxide/silver nanowire based transparent conductive films by a scalable lamination-assisted solution method | |
US20170040089A1 (en) | Methods of preparing conductors, conductors prepared therefrom, and electronic devices including the same | |
JP2011222953A (ja) | 透明導電膜形成用組成物及び太陽電池用の複合膜の形成方法並びに該方法により形成された複合膜 | |
CN108281501B (zh) | 基于Sb2S3顶电池的叠层薄膜太阳能电池及其制备方法 | |
CN109073945A (zh) | 电致变色器件 | |
JP2012142539A (ja) | 薄膜太陽電池向け裏面電極テープ、及びこれを用いる薄膜太陽電池の製造方法 | |
KR20200032332A (ko) | 은 나노선-그래핀 복합 나노박막 및 이의 제조방법 |