TW202141607A - 晶圓之加工方法 - Google Patents

晶圓之加工方法 Download PDF

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TW202141607A
TW202141607A TW110115032A TW110115032A TW202141607A TW 202141607 A TW202141607 A TW 202141607A TW 110115032 A TW110115032 A TW 110115032A TW 110115032 A TW110115032 A TW 110115032A TW 202141607 A TW202141607 A TW 202141607A
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wafer
water
soluble resin
modified layer
dicing tape
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中村勝
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日商迪思科股份有限公司
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Abstract

本發明之課題係提供不污染裝置晶片之表面及環境的同時，不使裝置晶片之抗折強度下降之晶圓之加工方法。 做為解決手段，晶圓之加工方法係包含將對於晶圓具有透過性之波長之雷射光線之聚光點，定位於分割預定線之內部，沿著分割預定線加以照射，於內部形成改質層的改質層形成工程、和於該改質層形成工程之前或後，於晶圓之表面，被覆水溶性樹脂之水溶性樹脂被覆工程、和擴張切割膠帶加以被覆水溶性樹脂的同時，將晶圓分割成各個之裝置晶片的分割工程、和擴張該切割膠帶，各個之裝置晶片之表面，以水溶性樹脂被覆狀態下，施以電漿蝕刻，除去殘留於裝置晶片之側面的改質層的改質層除去工程。

Description

晶圓之加工方法
本發明係有關將複數之裝置形成於相互交叉之複數之分割預定線所分割之表面之晶圓，分割成各個之裝置晶片之晶圓之加工方法。
IC、LSI、LED等之複數之裝置形成於經由相互交叉之複數之分割預定線所分割之表面之晶圓，係藉由雷射加工裝置，分割成各個裝置，分割之裝置晶片係利用於行動電話、個人電腦等之電氣機器。
雷射加工裝置係包含保持被加工物(晶圓)之夾盤、和對於保於該夾盤之被加工物，照射具有透過性之波長之雷射光線的雷射光線照射單元、和相對性向X軸方向加工輸送該夾盤與該雷射光線照射單元的X軸輸送機構；和相對性與向X軸方向正交Y軸方向加工輸送該夾盤與該雷射光線照射單元的Y軸輸送機構而構成，於晶圓之分割預定線之內部，定位雷射光線之聚光點加以照射，於分割預定線之內部，形成成為分割之起點之改質層(例如參照專利文獻1)。然後，擴張支持晶圓之背面之膠帶，將沿著分割預定線，形成於內部之改質層，做為分割之起點，將該晶圓分割成各個之裝置晶片。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2012-2604號公報
[發明欲解決之課題]
如上所述，形成沿著分割預定線成為分割之起點之改質層，將晶圓分割成各個之裝置晶片時，有著於分割晶圓之時，從成為分割起點之部位，粉塵被飛散，附著於裝置之表面，污染裝置之問題。
又，於裝置晶片之外周(側壁)係殘留改質層之一部分之故，於分割工程後之工程中，從改質層飛散出粉塵，污染裝置晶片及環境的同時，於裝置晶片之側壁，由於殘留該改質層，會有裝置晶片之抗折強度下降之問題。
因此，本發明之目的係提供不污染裝置晶片之表面及環境，不使裝置晶片之抗折強度下降之晶圓之加工方法。 [為解決課題之手段]
根據本發明時，提供將複數之裝置形成於經由相互交叉之複數之分割預定線所分割之表面之晶圓，分割成各個之裝置晶片之晶圓之加工方法中，具備將對於晶圓具有透過性之波長之雷射光線之聚光點，定位於分割預定線之內部，沿著分割預定線，照射雷射光線，於內部形成改質層的改質層形成工程、和於該改質層形成工程之前或後，於晶圓之表面，被覆水溶性樹脂之水溶性樹脂被覆工程、和於該改質層形成工程之前或後，將晶圓之背面貼附於切割膠帶的同時，以具有收容晶圓之開口部的環框體，支持切割膠帶之外周之框體支持工程、和擴張該切割膠帶加以被覆該水溶性樹脂的同時，將晶圓分割成各個之裝置晶片的分割工程、和擴張該切割膠帶，各個之該裝置晶片之表面，以該水溶性樹脂被覆狀態下，施以電漿蝕刻，除去殘留於該裝置晶片之側面的該改質層的改質層除去工程、和除去被覆於該裝置晶片之表面之該水溶性樹脂之水溶性樹脂除去工程的晶圓之加工方法。
將該框體支持工程，實施於該改質層形成工程之後時，於該改質層形成工程，從晶圓之背面側，照射雷射光線，於分割預定線之內部，形成改質層。又，將該框體支持工程，實施於該改質層形成工程之前時，於該改質層形成工程，從切割膠帶側隔著切割膠帶，照射雷射光線，於分割預定線之內部，形成改質層。
較佳係於該分割工程中，於固化水溶性樹脂後，擴張切割膠帶，將晶圓分割成各個之裝置晶片時，加熱水溶性樹脂加以軟化。較佳係於該分割工程中，於固化水溶性樹脂前，擴張切割膠帶，將晶圓分割成各個之裝置晶片。 [發明效果]
根據本發明之晶圓之加工方法時，於分割晶圓之時，即使飛散有粉塵，經由水溶性樹脂，晶圓之表面則自粉塵被遮蔽，解決裝置晶片被污染之問題。又，在裝置晶片之表面經由水溶性樹脂保護之狀態下，由於施以電漿蝕刻，不損傷到裝置晶片，除去殘留於裝置晶片之外周之改質層，於後工程中，粉塵不被飛散，解決裝置晶片及環境被污染問題之同時，解決裝置晶片之抗折強度下降之問題。
以下，對於本發明實施形態之晶圓之加工方法，參照附件圖面詳細加以說明。
於圖1，顯示經由本實施形態之晶圓之加工方法加工之被加工物之晶圓10。晶圓10係矽、藍寶石或鎵砷等基板之圓板狀之晶圓，將複數之裝置12形成於經由相互交叉之複數之分割預定線14所分割之表面10a。如此準備之晶圓10係搬送至圖1所示水溶性樹脂被覆裝置20(僅顯示一部分)，將背面10b側向下方，載置於清洗盤18上加以保持。清洗盤18係具備未圖示之旋轉驅動單元，將清洗盤18以高速進行旋轉。
於水溶性樹脂被覆裝置20，配設將特定之水溶性樹脂24，朝向下方供給之噴嘴22。噴嘴22供給之水溶性樹脂24係例如聚乙烯醇(PVA)或聚乙烯吡咯烷酮(PVP)等之水溶性之液狀樹脂。
將上述之噴嘴22，定位於清洗盤18之中心，即定位於晶圓10之表面10a之中心之上方，將特定量之水溶性樹脂24朝向下方供給之同時，將清洗盤18向以R1所示方向，例如以300rpm加以旋轉。水溶性樹脂24係經由該旋轉所產生之離心力，擴展於晶圓10之表面10a之外周側，如圖1之下段所示，被覆於晶圓10之表面10a整體(水溶性樹脂被覆工程)。然而，追加說明，此水溶性樹脂被覆工程係非限定於此時機之實施，如後述可在實施改質層形成工程之後，只要在實施分割工程之前實施即可。
接著，將晶圓10，搬送至圖2所示雷射加工裝置30(僅顯示一部分)。雷射加工裝置30係具備包含夾盤32之保持單元、和於保持在夾盤32之晶圓10，照射雷射光線LB之雷射光線照射單元34。又，於夾盤32之上面，以具有通氣性之素材加以形成，隔著夾盤32內部，連接於未圖示之吸引源。雷射加工裝置30係具備相對性向X軸方向加工輸送夾盤32與雷射光線照射單元34的X軸輸送機構、和相對性向與X軸方向正交Y軸方向加工輸送夾盤32與該雷射光線照射單元34的Y軸輸送機構，和旋轉夾盤32之旋轉驅動單元(皆省略圖示)。
搬送至雷射加工裝置30之晶圓10係將背面10b側向上方，載置於夾盤32之上面，吸引保持。然而，水溶性樹脂24係伴隨時間的經過而固化，保持於夾盤32亦沒有問題。保持於夾盤32之晶圓10係經由實施使用配設於雷射加工裝置30之紅外線照射單元、及包含紅外線攝影機對準單元(省略圖示)之對準工程，檢出形成於表面10a之特定方向之分割預定線14之位置的同時，將分割預定線14整合於X軸方向。檢出之分割預定線14之位置之資訊係記憶於未圖示之控制單元。
根據經由上述對準工程檢出之位置資訊，於特定之分割預定線14之加工開始位置，定位雷射光線照射單元34之聚光器36，在延伸於晶圓10之第1方向之分割預定線14之內部，定位雷射光線LB之聚光點加以照射之同時，將夾盤32加工輸送至於X軸方向，於晶圓10之分割預定線14之內部，形成改質層100。沿著延伸於第1方向之特定之分割預定線14之內部，形成改質層100時，將夾盤32於Y軸方向僅以分割預定線14之間隔分級輸送，在Y軸方向，將鄰接之未加工之分割預定線14，定位於聚光器36之正下方。然後。與上述者相同，將雷射光線LB之聚光點，定位於晶圓10之分割預定線14之內部進行照射，將夾盤32加工輸送於X軸方向，於內部形成改質層100。同樣地，將夾盤32加工輸送於X軸方向，及Y軸方向，於延伸於第1方向之所有分割預定線14之內部，形成改質層100。接著，90度旋轉夾盤32，將正交於延伸於第1方向之分割預定線14之第2方向之分割預定線14，整合於X軸方向。然後，對於各分割預定線14之內部，與上述者相同，於內部定位雷射光線LB之聚光點進行照射，於形成於晶圓10之表面10a之所有分割預定線14之內部，形成改質層100(改質層形成工程)。
然而，上述改質層形成工程之雷射加工條件係例如以下加以設定。 波長　　　　　　：1342nm 重覆頻率　　　　：90kHz 平均輸出　　　　：1.2W 加工輸送速度　　：700mm/秒
如上所述，實施改質層形成工程之時，將晶圓10從雷射加工裝置30搬出，將被覆水溶性樹脂24之表面10a側朝向上方，將背面10b側朝向下方，貼附於圖3所示切割膠帶T之中央的同時，以具有可收容晶圓10之大小之開口部Fa之環框體F，支持切割膠帶T之外周。由此，晶圓10則隔著切割膠帶T，支持於環框體F(框體支持工程)。然而，切割膠帶T係例如由聚氯乙烯(PVC)所成，於表面形成糊層之具有伸縮性之薄片。
如上所述，經由環框體F，支持晶圓10時，依需要，於被覆水溶性樹脂24之表面10a之上方，定位加熱器(省略圖示)，如圖4所示，將水溶性樹脂24從上方吹進熱風H加熱，軟化水溶性樹脂24。接著，在軟化水溶性樹脂24之狀態下，搬送至擴張省略圖示之切割膠帶T之擴張裝置，如圖5所示，將切割膠帶T向放射狀(以箭頭R2所示方向)擴張，伴隨被覆於晶圓10之表面10a之水溶性樹脂24，將晶圓10沿著分割預定線14形成分割溝110，分割成各個之裝置晶片12’(分割工程)。
如上所述，實施分割工程時，如圖6所示，在將晶圓10經由環框體F加以支持之狀態下，搬送至詳細圖示省略之電漿裝置40。電漿裝置40係可使用公知之電漿裝置40。例如，電漿裝置40係具備成為密閉空間之蝕刻處理室、和配設於蝕刻處理室內之上部電極及下部電極、和於蝕刻處理室內，從上部電極朝向下部電極側，噴出蝕刻氣體之氣體供給單元等(圖示皆省略)。在此，於該上部電極與該下部電極間，將施以分割工程之晶圓10之表面10a側朝向上方載置，於蝕刻處理室內，供給蝕刻氣體的同時，於上部電極，施加產生電漿之高頻電力。由此，於上部電極與下部電極之間之空間，產生電漿化之蝕刻氣體，電漿化之蝕刻氣體則吸引至晶圓10側。在此，經過上述分割工程，搬送至電漿裝置40之晶圓10係表面10a側被水溶性樹脂24保護的同時，挾著分割溝110，鄰接之裝置晶片12’成為離去之狀態，即露出形成裝置晶片12’之外周之側壁之狀態下加以維持。露出裝置晶片12’之側壁之狀態係實現例如對於支持晶圓10之切割膠帶T之外周領域，施以加熱處理，施以維持拉伸力S之加熱收縮加工。由此，於上述電漿裝置40中，各個裝置晶片12’之表面側以水溶性樹脂24被覆之狀態下，對於裝置晶片12’之側壁，施以電漿蝕刻，其結果，裝置晶片12’之表面不被蝕刻，除去殘留於裝置晶片12’之外周之改質層(改質層除去工程)。
接著，將晶圓10保持於圖7所示洗淨單元50 (僅顯示一部分)之旋轉台(省略圖示)，定位於水噴射噴嘴52之正下方，將該旋轉台向以箭頭R2所示方向，例如以500rpm加以旋轉下，朝向晶圓10之表面10a，噴射洗淨水W。經由該洗淨水W之噴射，溶解除去形成於晶圓10之表面10a之水溶性樹脂24之膜(水溶性樹脂除去工程)。從晶圓10之表面10a除去水溶性樹脂24時，將該旋轉台，例如以3000rpm加以旋轉下，從適切之噴射噴嘴(省略圖示)噴射乾燥用之空氣，乾燥晶圓10之表面10a。
根據上述實施形態時，於分割晶圓10之時，即使從分割溝110飛散有粉塵，經由被覆於裝置晶片12’之表面之水溶性樹脂24，粉塵被遮蔽，防止被污染。又，殘留於裝置晶片12’之外周之改質層係經由電漿蝕刻加以除去之故，於之後之工程中，粉塵不被飛散，解決裝置晶片及環境被污染問題之同時，解決裝置晶片之抗折強度下降之問題。
如上所述，實施分割工程、改質層除去工程時，可依需要，如圖8所示，實施從切割膠帶T拾取裝置晶片12’之拾取工程亦可。拾取工程係例如可使用於圖8所示之拾取裝置60加以實施。拾取裝置60係具備吸附裝置晶片12’加以搬送拾取吸具62、擴張切割膠帶T，擴張鄰接之裝置晶片12’彼此之間隔擴張單元64。
如圖8所示，擴張單元64係包含圓筒狀之擴張筒體64a、和鄰接於擴張筒體64a，在周方向隔著間隔，延伸於上方之複數之空氣壓缸64b、和連結於各別空氣壓缸64b之上端之環狀之保持構件64c、和於保持構件64c之外周緣部，於周方向隔著間隔加以配置之複數之夾鉗64d。擴張筒體64a之內徑係較晶圓10之直徑為大，擴張筒體64a之外徑係較環框體F之內徑Fa為小。又，保持構件64c係對應於環框體F，於保持構件64c之平坦之上面，載有環框體F。
如圖8所示，複數之空氣壓缸64b係在保持構件64c之上面與擴張筒體64a之上端幾近相同高度之基準位置(以實線表示)、和保持構件64c之上面較擴張筒體64a之上端更位於下方之擴張置(以二點虛線表示)之間，對於擴張筒體64a，相對地昇降保持構件64c。
圖8所示拾取吸具62係移動自如於水平方向及上下方向而構成。又，拾取吸具62中，連接吸引手段(省略圖示)，在拾取吸具62之前端下面，吸附裝置晶片12’。
參照圖8持續說明時，於拾取工程中，首先，將分割成各個裝置晶片12’之晶圓10朝上，於位在基準位置之保持構件64c之上面，載有環框體F。接著，以複數之夾鉗64d，固定環框體F。接著，經由將保持構件64c下降至擴張位置，於切割膠帶T作用放射狀之張力。結果，如於圖8以二點虛線表示，擴張貼附於切割膠帶T之裝置晶片12’彼此之間隔。
接著，於拾取對象之裝置晶片12’之上方，定位拾取吸具62而下降，在拾取吸具62之前端下面，吸附裝置晶片12’之上面。接著，上昇拾取吸具62，將裝置晶片12’從切割膠帶T剝離加以拾取(參照圖8之右方上段)。接著，將拾取之裝置晶片12’搬送至未圖示之承載盤等、或搬送至下個工程之特定之搬送位置。然後，將如此拾取作業，對於所有裝置晶片12’，順序進行，終止拾取工程。如上所述，預先實施水溶性樹脂除去工程時，於拾取工程中，被拾取之裝置晶片12’係如圖8之右方上段所示，除去水溶性樹脂24，直接搬送至接合工程，實施接合加工。
上述之實施形態中，於實施拾取工程之前，雖實施水溶性樹脂除去工程，但本發明非限定於此，實施電漿蝕刻所成改質層除去工程後，不實施水溶性樹脂除去工程，實施拾取工程，於表面殘留水溶性樹脂24之狀態下，拾取裝置晶片12’(參照圖8之右方下段)亦可。此時，下個工程後，例如將裝置晶片12’配線於基板等之前，實施除去水溶性樹脂24之水溶性樹脂被覆工程。經由如此，從拾取工程至下個工程之期間，可將裝置晶片12’之表面在此之前保持潔淨。
上述實施形態中，雖將框體支持工程，實施在改質層形成工程之後，於改質層形成工程，直接從晶圓之背面側，照射雷射光線LB，於分割預定線14之內部，形成改質層100，亦可將框體支持工程，實施於改質層形成工程之前。此時，例如如圖9所示，將晶圓10之表面10a側朝向上方，將背面10b側朝向下方，貼附於切割膠帶T之中央的同時，以具有可收容晶圓10之大小之開口部Fa之環框體F，支持切割膠帶T之外周(框體支持工程)。接著，將晶圓10之表面10a定位於水溶性樹脂被覆裝置20之噴嘴22之正下方，於以環框體F所保持之晶圓10之表面10a，供給水溶性樹脂24，令環框體F以箭頭R3所示方向旋轉，如圖9之下段所示，可將水溶性樹脂24均勻被覆於表面10a。
如上所述，於改質層形成工程之前，實施框體支持工程之時，如圖10所示，搬送至雷射加工裝置30，令隔著切割膠帶T經由環框體F支持之晶圓10之背面10b側朝向上方，即，令切割膠帶T側朝向上方，保持於未圖示之夾盤，從切割膠帶T側隔著切割膠帶T照射雷射光線LB，與根據圖2所說明相同地，可於形成於晶圓10之表面10a之所有分割預定線14之內部，形成改質層100。
上述各實施形態中，皆於實施改質層形成工程之前，實施水溶性樹脂被覆工程，但如上所述，水溶性樹脂被覆工程係於實施飛散粉塵等之分割工程之前，加以實施即可之故，實施改質層形成工程後，實施分割工程之前加以實施亦可。於實施改質層形成工程之後，實施水溶性樹脂被覆工程，實施分割工程之時，於實施分割工程之前，實施水溶性樹脂被覆工程，在固化被覆於晶圓10之表面10a之水溶性樹脂24之前，實施分割工程為佳。由此，無需加熱水溶性樹脂24而軟化，可良好將晶圓10分割成各個之裝置晶片12’。
10:晶圓 10a:表面 12b:背面 12:裝置 12’:裝置晶片 14:分割預定線 18:清洗盤 20:水溶性樹脂被覆裝置 22:噴嘴 24:水溶性樹脂 30:雷射加工裝置 32:夾盤 34:雷射光線照射單元 36:聚光器 40:電漿裝置 50:洗淨單元 52:水噴射噴嘴 60:拾取裝置 62:拾取吸具 64:擴張單元 100:改質層 110:分割溝 LB:雷射光線 F:環框體 T:切割膠帶
[圖1]顯示水溶性樹脂被覆工程之實施形態之斜視圖。 [圖2]顯示改質層形成工程之實施形態之斜視圖。 [圖3]顯示框體支持工程之實施形態之斜視圖。 [圖4]顯示加熱水溶性樹脂軟化之形態之斜視圖。 [圖5]顯示分割工程之實施形態之斜視圖。 [圖6]顯示改質層除去工程之實施形態之斜視圖。 [圖7]顯示水溶性樹脂除去工程之實施形態之斜視圖。 [圖8]將拾取工程之實施形態以一部分剖面加以顯示之側面圖。 [圖9]顯示水溶性樹脂被覆工程之其他之實施形態之斜視圖。 [圖10]顯示改質層形成工程之其他之實施形態之斜視圖。
10:晶圓
10a:表面
12’:裝置晶片
24:水溶性樹脂
110:分割溝
F:環框體
T:切割膠帶
R2:箭頭

Claims (5)

  1. 一種晶圓之加工方法，將複數之裝置形成於經由相互交叉之複數之分割預定線所分割之表面之晶圓，分割成各個之裝置晶片之晶圓之加工方法，其特徵係具備： 將對於晶圓具有透過性之波長之雷射光線之聚光點，定位於分割預定線之內部，沿著分割預定線，照射雷射光線，於內部形成改質層的改質層形成工程、 和於該改質層形成工程之前或後，於晶圓之表面，被覆水溶性樹脂之水溶性樹脂被覆工程、 和於該改質層形成工程之前或後，將晶圓之背面貼附於切割膠帶的同時，以具有收容晶圓之開口部的環框體，支持切割膠帶之外周之框體支持工程、 和擴張該切割膠帶，與所被覆的該水溶性樹脂的一起將晶圓分割成各個之裝置晶片的分割工程、 和擴張該切割膠帶，在各個之該裝置晶片之表面，以該水溶性樹脂被覆的狀態，施以電漿蝕刻，除去殘留於該裝置晶片之側面的該改質層的改質層除去工程、 和除去被覆於該裝置晶片之表面之該水溶性樹脂之水溶性樹脂除去工程。
  2. 如請求項1記載之晶圓之加工方法，其中，將該框體支持工程，實施於該改質層形成工程之後時，於該改質層形成工程，從晶圓之背面側，照射雷射光線，於該分割預定線之內部，形成改質層。
  3. 如請求項1記載之晶圓之加工方法、其中，將該框體支持工程，實施於該改質層形成工程之前時，於該改質層形成工程，從該切割膠帶側隔著該切割膠帶，照射雷射光線，於該分割預定線之內部，形成改質層。
  4. 如請求項1記載之晶圓之加工方法、其中，於該分割工程中，於固化該水溶性樹脂後，擴張該切割膠帶，將晶圓分割成各個之該裝置晶片時，加熱該水溶性樹脂使其軟化。
  5. 如請求項1記載之晶圓之加工方法、其中，於該分割工程中，於固化該水溶性樹脂前，擴張該切割膠帶，將晶圓分割成各個之該裝置晶片。
TW110115032A 2020-04-28 2021-04-27 晶圓之加工方法 TW202141607A (zh)

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