JP2014523109A5 - - Google Patents

Download PDF

Info

Publication number
JP2014523109A5
JP2014523109A5 JP2014515838A JP2014515838A JP2014523109A5 JP 2014523109 A5 JP2014523109 A5 JP 2014523109A5 JP 2014515838 A JP2014515838 A JP 2014515838A JP 2014515838 A JP2014515838 A JP 2014515838A JP 2014523109 A5 JP2014523109 A5 JP 2014523109A5
Authority
JP
Japan
Prior art keywords
material layer
mask material
mask
water
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014515838A
Other languages
English (en)
Japanese (ja)
Other versions
JP5934788B2 (ja
JP2014523109A (ja
Filing date
Publication date
Priority claimed from US13/161,427 external-priority patent/US8557682B2/en
Application filed filed Critical
Publication of JP2014523109A publication Critical patent/JP2014523109A/ja
Publication of JP2014523109A5 publication Critical patent/JP2014523109A5/ja
Application granted granted Critical
Publication of JP5934788B2 publication Critical patent/JP5934788B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014515838A 2011-06-15 2012-05-23 レーザによる基板のダイシング及びプラズマエッチング用の多層マスク Expired - Fee Related JP5934788B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/161,427 2011-06-15
US13/161,427 US8557682B2 (en) 2011-06-15 2011-06-15 Multi-layer mask for substrate dicing by laser and plasma etch
PCT/US2012/039205 WO2012173758A2 (en) 2011-06-15 2012-05-23 Multi-layer mask for substrate dicing by laser by laser and plasma etch

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014259567A Division JP6207496B2 (ja) 2011-06-15 2014-12-23 レーザによる基板のダイシング及びプラズマエッチング用の多層マスク

Publications (3)

Publication Number Publication Date
JP2014523109A JP2014523109A (ja) 2014-09-08
JP2014523109A5 true JP2014523109A5 (enExample) 2014-12-11
JP5934788B2 JP5934788B2 (ja) 2016-06-15

Family

ID=47353998

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014515838A Expired - Fee Related JP5934788B2 (ja) 2011-06-15 2012-05-23 レーザによる基板のダイシング及びプラズマエッチング用の多層マスク
JP2014259567A Active JP6207496B2 (ja) 2011-06-15 2014-12-23 レーザによる基板のダイシング及びプラズマエッチング用の多層マスク

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014259567A Active JP6207496B2 (ja) 2011-06-15 2014-12-23 レーザによる基板のダイシング及びプラズマエッチング用の多層マスク

Country Status (6)

Country Link
US (2) US8557682B2 (enExample)
JP (2) JP5934788B2 (enExample)
KR (2) KR102036708B1 (enExample)
CN (2) CN103582935B (enExample)
TW (2) TWI543248B (enExample)
WO (1) WO2012173758A2 (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8557683B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8557682B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
US9029242B2 (en) 2011-06-15 2015-05-12 Applied Materials, Inc. Damage isolation by shaped beam delivery in laser scribing process
US8703581B2 (en) 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
US8759197B2 (en) 2011-06-15 2014-06-24 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8598016B2 (en) 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
US8969177B2 (en) * 2012-06-29 2015-03-03 Applied Materials, Inc. Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US8845854B2 (en) * 2012-07-13 2014-09-30 Applied Materials, Inc. Laser, plasma etch, and backside grind process for wafer dicing
US9553021B2 (en) * 2012-09-03 2017-01-24 Infineon Technologies Ag Method for processing a wafer and method for dicing a wafer
JP6219565B2 (ja) * 2012-12-26 2017-10-25 株式会社ディスコ ウエーハの加工方法
WO2014126785A2 (en) * 2013-02-13 2014-08-21 Applied Materials, Inc. Water soluble film and uv-curable film hybrid mask for wafer dicing using laser scribing and plasma etch
US20140273401A1 (en) * 2013-03-14 2014-09-18 Wei-Sheng Lei Substrate laser dicing mask including laser energy absorbing water-soluble film
US9620379B2 (en) * 2013-03-14 2017-04-11 Applied Materials, Inc. Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch
US9261791B2 (en) 2013-03-15 2016-02-16 Infineon Technologies Ag Photoresist application
US20150011073A1 (en) * 2013-07-02 2015-01-08 Wei-Sheng Lei Laser scribing and plasma etch for high die break strength and smooth sidewall
WO2015023287A1 (en) * 2013-08-15 2015-02-19 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US9105710B2 (en) * 2013-08-30 2015-08-11 Applied Materials, Inc. Wafer dicing method for improving die packaging quality
US20150079760A1 (en) * 2013-09-19 2015-03-19 Wei-Sheng Lei Alternating masking and laser scribing approach for wafer dicing using laser scribing and plasma etch
US9224650B2 (en) * 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
US9646951B2 (en) * 2013-12-10 2017-05-09 Semiconductor Components Industries, Llc Method of forming a semiconductor device and structure therefor
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
US9299611B2 (en) 2014-01-29 2016-03-29 Applied Materials, Inc. Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
JP6295094B2 (ja) * 2014-02-06 2018-03-14 株式会社ディスコ ウェーハの加工方法
US20150287638A1 (en) * 2014-04-04 2015-10-08 Jungrae Park Hybrid wafer dicing approach using collimated laser scribing process and plasma etch
US9076860B1 (en) * 2014-04-04 2015-07-07 Applied Materials, Inc. Residue removal from singulated die sidewall
US8932939B1 (en) * 2014-04-14 2015-01-13 Applied Materials, Inc. Water soluble mask formation by dry film lamination
US9112050B1 (en) * 2014-05-13 2015-08-18 Applied Materials, Inc. Dicing tape thermal management by wafer frame support ring cooling during plasma dicing
US9034771B1 (en) * 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
US9159624B1 (en) * 2015-01-05 2015-10-13 Applied Materials, Inc. Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach
JP6055494B2 (ja) * 2015-01-27 2016-12-27 碁達科技股▲ふん▼有限公司 レーザーダイシング方法
US9633902B2 (en) * 2015-03-10 2017-04-25 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device that includes dividing semiconductor substrate by dry etching
JP6594153B2 (ja) * 2015-10-13 2019-10-23 株式会社ディスコ ウエーハの加工方法
DE102015118991A1 (de) * 2015-11-05 2017-05-11 Ev Group E. Thallner Gmbh Verfahren zur Behandlung von Millimeter- und/oder Mikrometer- und/oder Nanometerstrukturen an einer Oberfläche eines Substrats
JP6467592B2 (ja) * 2016-02-04 2019-02-13 パナソニックＩｐマネジメント株式会社 素子チップの製造方法および電子部品実装構造体の製造方法ならびに電子部品実装構造体
US9972575B2 (en) * 2016-03-03 2018-05-15 Applied Materials, Inc. Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
CN105789031A (zh) * 2016-03-11 2016-07-20 中国建筑材料科学研究总院 激光直写用掩膜及其刻蚀方法
GB201611652D0 (en) * 2016-07-04 2016-08-17 Spts Technologies Ltd Method of detecting a condition
JP6770858B2 (ja) * 2016-09-09 2020-10-21 株式会社ディスコ 分割方法
KR102644518B1 (ko) * 2017-01-06 2024-03-08 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지의 제조 방법
JP6861526B2 (ja) * 2017-02-02 2021-04-21 株式会社ディスコ ウエーハの加工方法
JP2018181902A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
US10700012B2 (en) 2017-04-14 2020-06-30 Qualcomm Incorporated Porous silicon dicing
JP7042437B2 (ja) * 2017-09-07 2022-03-28 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
US10879195B2 (en) * 2018-02-15 2020-12-29 Micron Technology, Inc. Method for substrate moisture NCF voiding elimination
JP2019169686A (ja) * 2018-03-26 2019-10-03 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
JP7138297B2 (ja) * 2018-03-26 2022-09-16 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
GB2572608A (en) * 2018-04-03 2019-10-09 Ilika Tech Ltd Laser processing method for thin film structures
TWI741262B (zh) 2018-06-04 2021-10-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
CN109461717A (zh) * 2018-10-15 2019-03-12 上海华虹宏力半导体制造有限公司 一种晶圆及其形成方法、等离子体裂片方法
US11964343B2 (en) * 2020-03-09 2024-04-23 Applied Materials, Inc. Laser dicing system for filamenting and singulating optical devices
US20220108908A1 (en) * 2020-10-06 2022-04-07 Applied Materials, Inc. Shadow ring kit for plasma etch wafer singulation process

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049944A (en) 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
JPS52151560A (en) * 1976-06-11 1977-12-16 Nec Home Electronics Ltd Production of semiconductor device
JPS5868930A (ja) * 1981-10-20 1983-04-25 Fujitsu Ltd 半導体装置の製造方法
JPS6242426A (ja) * 1985-08-19 1987-02-24 Toshiba Corp 半導体素子の製造方法
JPH0364758A (ja) * 1989-08-02 1991-03-20 Hitachi Ltd フォトレジスト剥離方法
JP3165304B2 (ja) * 1992-12-04 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体処理装置
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
JPH09216085A (ja) 1996-02-07 1997-08-19 Canon Inc 基板の切断方法及び切断装置
JPH1027971A (ja) 1996-07-10 1998-01-27 Nec Corp 有機薄膜多層配線基板の切断方法
US6426484B1 (en) 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
US5920973A (en) 1997-03-09 1999-07-13 Electro Scientific Industries, Inc. Hole forming system with multiple spindles per station
JP3230572B2 (ja) 1997-05-19 2001-11-19 日亜化学工業株式会社 窒化物系化合物半導体素子の製造方法及び半導体発光素子
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
JP2000294523A (ja) * 1999-04-01 2000-10-20 Sony Corp 半導体製造装置および半導体装置の製造方法
JP3677191B2 (ja) * 1999-03-15 2005-07-27 株式会社東芝 感光性ポリイミド用現像液、ポリイミド膜パターン形成方法、及び電子部品
US6562698B2 (en) 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
JP4318353B2 (ja) * 1999-10-01 2009-08-19 パナソニック株式会社 基板の製造方法
JP2001110811A (ja) 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4387007B2 (ja) 1999-10-26 2009-12-16 株式会社ディスコ 半導体ウェーハの分割方法
JP2001144126A (ja) 1999-11-12 2001-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
JP2001148358A (ja) 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd 半導体ウェーハ及び該半導体ウェーハの分割方法
AU2001227764A1 (en) 2000-01-10 2001-07-24 Electro Scientific Industries, Inc. Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulsewidths
US6887804B2 (en) 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
US6383931B1 (en) 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
TW504425B (en) 2000-03-30 2002-10-01 Electro Scient Ind Inc Laser system and method for single pass micromachining of multilayer workpieces
US7139269B2 (en) 2000-06-09 2006-11-21 Broadcom Corporation Cascading of gigabit switches
JP2002016123A (ja) * 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
WO2002005345A1 (en) 2000-07-12 2002-01-17 Electro Scientific Industries, Inc. Uv laser system and method for single pulse severing of ic fuses
US6764958B1 (en) * 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US20020065900A1 (en) * 2000-10-02 2002-05-30 Applied Materials, Inc. Method and apparatus for communicating images, data, or other information in a defect source identifier
JP4109823B2 (ja) 2000-10-10 2008-07-02 株式会社東芝 半導体装置の製造方法
JP2002141259A (ja) * 2000-10-30 2002-05-17 Sharp Corp 半導体装置の製法
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
KR100913510B1 (ko) 2001-10-01 2009-08-21 엑스에스아이엘 테크놀러지 리미티드 기계 가공 기판, 특히 반도체 웨이퍼
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
JP3910843B2 (ja) 2001-12-13 2007-04-25 東京エレクトロン株式会社 半導体素子分離方法及び半導体素子分離装置
JP4006994B2 (ja) 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体
US6706998B2 (en) 2002-01-11 2004-03-16 Electro Scientific Industries, Inc. Simulated laser spot enlargement
WO2003071591A1 (en) 2002-02-25 2003-08-28 Disco Corporation Method for dividing semiconductor wafer
KR100451950B1 (ko) 2002-02-25 2004-10-08 삼성전자주식회사 이미지 센서 소자 웨이퍼 소잉 방법
JP2003257896A (ja) 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd 半導体ウェーハの分割方法
CN1663038A (zh) 2002-04-19 2005-08-31 Xsil技术有限公司 激光加工
JP4544811B2 (ja) * 2002-05-09 2010-09-15 大日本印刷株式会社 エレクトロルミネッセント素子の製造方法
JP2004031526A (ja) 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体素子の製造方法
US6582983B1 (en) 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP4286497B2 (ja) 2002-07-17 2009-07-01 新光電気工業株式会社 半導体装置の製造方法
KR20040010280A (ko) * 2002-07-22 2004-01-31 어플라이드 머티어리얼스, 인코포레이티드 고온 기판 이송 로봇
JP3908148B2 (ja) 2002-10-28 2007-04-25 シャープ株式会社 積層型半導体装置
JP2004273895A (ja) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
JP2004322168A (ja) 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd レーザー加工装置
JP4231349B2 (ja) 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置
US7482178B2 (en) * 2003-08-06 2009-01-27 Applied Materials, Inc. Chamber stability monitoring using an integrated metrology tool
JP4408361B2 (ja) 2003-09-26 2010-02-03 株式会社ディスコ ウエーハの分割方法
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
US7094613B2 (en) * 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
JP4471632B2 (ja) 2003-11-18 2010-06-02 株式会社ディスコ ウエーハの加工方法
JP2005203541A (ja) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
US7459377B2 (en) 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7804043B2 (en) * 2004-06-15 2010-09-28 Laserfacturing Inc. Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7507638B2 (en) * 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
JP4018088B2 (ja) 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
US7199050B2 (en) 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device
JP4018096B2 (ja) 2004-10-05 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法、及び半導体素子の製造方法
JP4288229B2 (ja) 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
US7875898B2 (en) 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
JP2006253402A (ja) 2005-03-10 2006-09-21 Nec Electronics Corp 半導体装置の製造方法
JP4478053B2 (ja) 2005-03-29 2010-06-09 株式会社ディスコ 半導体ウエーハ処理方法
JP4285455B2 (ja) 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
JP4599243B2 (ja) 2005-07-12 2010-12-15 株式会社ディスコ レーザー加工装置
TWI295816B (en) * 2005-07-19 2008-04-11 Applied Materials Inc Hybrid pvd-cvd system
US9138913B2 (en) 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US20070079866A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. System and method for making an improved thin film solar cell interconnect
JP4769560B2 (ja) 2005-12-06 2011-09-07 株式会社ディスコ ウエーハの分割方法
JP2007281339A (ja) * 2006-04-11 2007-10-25 Sharp Corp 半導体装置およびその製造方法
JP4372115B2 (ja) 2006-05-12 2009-11-25 パナソニック株式会社 半導体装置の製造方法、および半導体モジュールの製造方法
US8198566B2 (en) 2006-05-24 2012-06-12 Electro Scientific Industries, Inc. Laser processing of workpieces containing low-k dielectric material
US20070272666A1 (en) 2006-05-25 2007-11-29 O'brien James N Infrared laser wafer scribing using short pulses
JP4480728B2 (ja) 2006-06-09 2010-06-16 パナソニック株式会社 Ｍｅｍｓマイクの製造方法
KR101262386B1 (ko) 2006-09-25 2013-05-08 엘지이노텍 주식회사 질화물 반도체 발광소자의 제조 방법
JP4544231B2 (ja) 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
JP4840174B2 (ja) 2007-02-08 2011-12-21 パナソニック株式会社 半導体チップの製造方法
JP4840200B2 (ja) * 2007-03-09 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7926410B2 (en) 2007-05-01 2011-04-19 J.R. Automation Technologies, L.L.C. Hydraulic circuit for synchronized horizontal extension of cylinders
WO2008142911A1 (en) 2007-05-18 2008-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20090016853A1 (en) * 2007-07-09 2009-01-15 Woo Sik Yoo In-line wafer robotic processing system
JP4488037B2 (ja) 2007-07-24 2010-06-23 パナソニック株式会社 半導体ウェハの処理方法
JP2009034694A (ja) 2007-07-31 2009-02-19 Disco Abrasive Syst Ltd レーザ加工方法
US8012857B2 (en) 2007-08-07 2011-09-06 Semiconductor Components Industries, Llc Semiconductor die singulation method
US7989319B2 (en) 2007-08-07 2011-08-02 Semiconductor Components Industries, Llc Semiconductor die singulation method
TW200935506A (en) 2007-11-16 2009-08-16 Panasonic Corp Plasma dicing apparatus and semiconductor chip manufacturing method
US8614151B2 (en) 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
US7859084B2 (en) 2008-02-28 2010-12-28 Panasonic Corporation Semiconductor substrate
TW201006600A (en) 2008-04-10 2010-02-16 Applied Materials Inc Laser-scribing platform and hybrid writing strategy
KR101026010B1 (ko) 2008-08-13 2011-03-30 삼성전기주식회사 레이저 가공장치 및 레이저 가공방법
JP2010165963A (ja) 2009-01-19 2010-07-29 Furukawa Electric Co Ltd:The 半導体ウェハの処理方法
US10307862B2 (en) 2009-03-27 2019-06-04 Electro Scientific Industries, Inc Laser micromachining with tailored bursts of short laser pulses
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US8703581B2 (en) 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
US8557682B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
US8598016B2 (en) 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
US8557683B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing

Similar Documents

Publication Publication Date Title
JP2014523109A5 (enExample)
TWI543248B (zh) 用以切割包含複數個積體電路之基板的方法及系統
JP2014523112A5 (enExample)
JP2014523110A5 (enExample)
KR102060024B1 (ko) 레이저 스크라이빙 및 플라즈마 에칭에 의한 디바이스 싱귤레이션을 위한 인-시튜 증착된 마스크 층
JP2013535114A5 (enExample)
TWI635569B (zh) 用於高晶粒破裂強度及平滑側壁之雷射劃線及電漿蝕刻
KR102303143B1 (ko) 레이저 및 플라즈마 에칭에 의한 기판 다이싱을 위한 마스크 잔류물 제거
TW201405646A (zh) 用於高晶粒破裂強度與清潔側壁的雷射劃線及電漿蝕刻
CN107845607A (zh) 通过激光与等离子体蚀刻的基板切割所用的水溶性掩模
TW201409557A (zh) 用於晶圓切割之雷射、電漿蝕刻以及背面研磨方法
TWI619165B (zh) 以雷射及電漿蝕刻進行的基板切割所用的含非光可界定雷射能量吸收層的多層遮罩