TWI520204B - 使用基於飛秒之雷射及電漿蝕刻的晶圓切割方法及系統 - Google Patents
使用基於飛秒之雷射及電漿蝕刻的晶圓切割方法及系統 Download PDFInfo
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Description
本申請案為2011年6月15日提出申請的美國申請案13/160,713之延續案,其主張2010年6月22日提出申請的美國臨時申請案第61/357,468號之權益,該案之全部內容以引用之方式併入本文中。
本發明之實施例係關於半導體處理領域,且特定言之係關於切割半導體晶圓之方法,其中每一晶圓在該晶圓上具有複數個積體電路。
在半導體晶圓處理中,在由矽或其他半導體材料組成之晶圓(亦被稱作基板)上形成積體電路。通常,利用半導體、導電或絕緣之不同材料層來形成積體電路。使用各種熟知製程摻雜、沈積及蝕刻此等材料,以形成積體電路。處理每一晶圓以形成大量含有積體電路之個別區域,該等個別區域稱為晶粒。
在積體電路形成製程之後,「切割」晶圓以將個別晶粒彼此分隔,以用於封裝或在較大電路內以未封裝形式使用。用於晶圓切割之兩種主要技術為劃線及鋸切。藉由劃線,
沿預成形之劃割線越過晶圓表面移動金剛石尖頭劃線器。此等劃割線沿晶粒之間的間隔延伸。此等間隔通常被稱作「切割道(street)」。金剛石劃線器沿切割道在晶圓表面中形成淺劃痕。在諸如以滾軸施加壓力之後,晶圓沿該等劃割線分開。晶圓斷裂遵循晶圓基板之晶格結構。劃線可用於厚度約10密耳(千分之一吋)或更小之晶圓。對於更厚之晶圓,目前鋸切為用於切割之較佳方法。
藉由鋸切,以每分鐘高轉數旋轉之金剛石尖頭鋸接觸晶圓表面,且沿切割道鋸切晶圓。晶圓安裝在諸如在薄膜框架上伸展之黏合薄膜的支撐構件上,且鋸反復施加於垂直切割道與水平切割道兩者。劃線或鋸切的一個問題為:切屑及挖傷可沿該等晶粒之切斷邊緣形成。此外,裂紋可形成且自該等晶粒之邊緣擴散至基板中,且致使積體電路不工作。切削及裂化特別為劃線的問題,因為正方形或矩形晶粒僅一側可沿結晶結構之<110>方向被劃線。因此,該晶粒另一側之裂開產生一鋸齒狀分隔線。由於切削及裂化,故在晶圓上的晶粒之間需要額外間隔,以防止損壞積體電路,例如,將切屑及裂紋維持在與實際積體電路一定距離處。間隔要求導致在一標準尺寸晶圓上不能形成同樣多之晶粒,且浪費了原本可用於電路之晶圓空間(real estate)。鋸之使用加重半導體晶圓上空間之浪費。鋸刃約15微米厚。因此,為保證由鋸造成之切口周圍之裂紋及其他損壞不損害積體電路,常須三百微米至五百微米來分隔該等晶粒中之每一者之電路。此外,在切割之後,每一晶粒需要實質性清潔,以移除由鋸切製程產
生之微粒及其他污染物。
亦使用了電漿切割,但電漿切割同樣可具有局限性。舉例而言,成本可為阻礙實施電漿切割的一個局限。用於佈局圖樣抗蝕劑之標準微影操作可致使實施成本過高。可能阻礙實施電漿切割之另一局限為,在沿切割道切割中之常見金屬(例如銅)之電漿處理可造成生產問題或產量限制。
本發明之實施例包括切割半導體晶圓之方法,其中每一晶圓在該晶圓上具有複數個積體電路。
在一實施例中,一種切割具有複數個積體電路之半導體晶圓的方法包括以下步驟:在該半導體晶圓上方形成一遮罩,該遮罩由覆蓋且保護該等積體電路之一層組成。然後用一基於飛秒之雷射劃線製程將該遮罩佈局圖樣,以提供具有間隙之經佈局圖樣之遮罩,從而曝露該等積體電路之間的該半導體晶圓之區域。然後穿過該經佈局圖樣之遮罩中之該等間隙將該半導體晶圓蝕刻,以單分該等積體電路。
在另一實施例中,一種用於切割半導體晶圓之系統包括一工廠介面。一雷射劃線設備與該工廠介面耦合,且包括一基於飛秒之雷射。一電漿蝕刻腔室亦與該工廠介面耦合。
在另一實施例中,一種切割具有複數個積體電路之半導體晶圓的方法包括以下步驟:在一矽基板上方形成一聚合物層。該聚合物層覆蓋且保護安置於該矽基板上之積體電路。該等積體電路由安置於一低介電常數材料層及一銅層上方的二氧化矽層組成。用一基於飛秒之雷射劃線製程將該聚
合物層、該二氧化矽層、該低介電常數材料層及該銅層佈局圖樣,以曝露該等積體電路之間的該矽基板之區域。然後穿過間隙將該矽基板蝕刻,以單分該等積體電路。
100‧‧‧半導體晶圓
102‧‧‧區域
104‧‧‧切割道
106‧‧‧切割道
200‧‧‧遮罩
202‧‧‧間隙
204‧‧‧間隙
206‧‧‧區域
300‧‧‧流程圖
302‧‧‧操作
304‧‧‧操作
306‧‧‧操作
402‧‧‧遮罩
404‧‧‧半導體晶圓或基板
406‧‧‧積體電路
407‧‧‧切割道
408‧‧‧遮罩
410‧‧‧間隙
412‧‧‧溝道
500A‧‧‧通孔
500B‧‧‧通孔
500C‧‧‧通孔
502A‧‧‧損壞
502B‧‧‧損壞
502C‧‧‧損壞
600‧‧‧切割道區域/切割道
602‧‧‧頂部部分
604‧‧‧第一二氧化矽層
606‧‧‧第一蝕刻終止層
608‧‧‧第一低介電常數介電層
610‧‧‧第二蝕刻終止層
612‧‧‧第二低介電常數介電層
614‧‧‧第三蝕刻終止層
616‧‧‧無摻雜矽玻璃層
618‧‧‧第二二氧化矽層
620‧‧‧光阻層
622‧‧‧銅金屬
700‧‧‧曲線圖
702‧‧‧結晶矽
704‧‧‧銅
706‧‧‧結晶二氧化矽
708‧‧‧非晶二氧化矽
800‧‧‧方程式
902‧‧‧遮罩層/光阻層/遮罩
904‧‧‧元件層
906‧‧‧基板
908‧‧‧晶粒黏著薄膜
910‧‧‧襯帶
912‧‧‧雷射劃線製程/雷射切除製程
914‧‧‧溝道
916‧‧‧穿矽電漿深蝕刻製程
1000‧‧‧佈局
1002‧‧‧佈局
1100‧‧‧半導體晶圓或基板
1102‧‧‧半導體晶圓或基板
1200‧‧‧製程工具
1202‧‧‧工廠介面
1204‧‧‧負載鎖室
1206‧‧‧群集工具
1208‧‧‧電漿蝕刻腔室
1210‧‧‧雷射劃線設備
1212‧‧‧沈積腔室
1214‧‧‧濕潤/乾燥站
1300‧‧‧電腦系統
1302‧‧‧處理器
1304‧‧‧主記憶體
1306‧‧‧靜態記憶體
1308‧‧‧網路介面元件
1310‧‧‧視訊顯示單元
1312‧‧‧文數輸入元件
1314‧‧‧遊標控制元件
1316‧‧‧訊號產生元件
1318‧‧‧輔助記憶體
1320‧‧‧網路
1322‧‧‧軟體
1326‧‧‧處理邏輯
1330‧‧‧匯流排
1331‧‧‧機器可存取儲存媒體
第1圖圖示根據本發明之一實施例,待切割之半導體晶圓的俯視圖。
第2圖圖示根據本發明之一實施例的待切割之半導體晶圓的俯視圖,該半導體晶圓具有切割遮罩形成在半導體晶圓上。
第3圖為根據本發明之一實施例,表示切割半導體晶圓之方法之操作的流程圖,該半導體晶圓包括複數個積體電路。
第4A圖圖示根據本發明之一實施例,在執行切割該半導體晶圓之方法期間,包括複數個積體電路之半導體晶圓的橫截面圖,該橫截面圖對應於第3圖之流程圖之操作302。
第4B圖圖示根據本發明之一實施例,在執行切割該半導體晶圓之方法期間,包括複數個積體電路之半導體晶圓的橫截面圖,該橫截面圖對應於第3圖之流程圖之操作304。
第4C圖圖示根據本發明之一實施例,在執行切割該半導體晶圓之方法期間,包括複數個積體電路之半導體晶圓的橫截面圖,該橫截面圖對應於第3圖之流程圖之操作306。
第5圖圖示根據本發明之一實施例,使用飛秒範圍內之雷射脈衝與較長脈衝時間比較之效果。
第6圖圖示根據本發明之一實施例,材料之堆疊之橫截面圖,該等材料可用於半導體晶圓或基板之切割道區域。
第7圖包括根據本發明之一實施例,結晶矽(c-Si)、銅(Cu)、結晶二氧化矽(c-SiO2)及非晶二氧化矽(a-SiO2)之吸收係數隨著光子能變化的曲線圖。
第8圖為方程式,該方程式展示給定雷射之雷射強度與雷射脈衝能量、雷射脈衝寬度及雷射光束半徑之函數關係。
第9A圖至第9D圖圖示根據本發明之一實施例,切割半導體晶圓之方法之不同操作的橫截面圖。
第10圖圖示根據本發明之一實施例,藉由使用與習知切割相比較窄之切割道達成的半導體晶圓上之緊密作用,該習知切割可限於最小寬度。
第11圖圖示根據本發明之一實施例,允許較緊密堆積且因此與柵格對準方法相比允許每晶圓更多之晶粒的自由形式積體電路佈置。
第12圖圖示根據本發明之一實施例,用於晶圓或基板之雷射及電漿切割之工具佈局的方塊圖。
第13圖圖示根據本發明之一實施例,示例性電腦系統的方塊圖。
已描述切割半導體晶圓之方法,其中每一晶圓在該晶圓上具有複數個積體電路。在以下描述中闡述眾多特定細節,諸如基於飛秒之雷射劃線及電漿蝕刻條件及材料狀況,
以提供對本發明之實施例之透徹理解。熟習此項技術者而言,本發明之實施例可在無此等特定細節之情況下實施將顯而易見。在其他實例中,諸如積體電路製造之熟知態樣不作詳述,以免不必要地使本發明之實施例難以理解。此外,應理解,附圖中所示之各種實施例為說明性表示,且未必按比例繪製。
可實施涉及初始雷射劃線及後續電漿蝕刻之混合晶圓或基板切割製程,以用於晶粒單分。雷射劃線製程可用於清除遮罩層、有機及無機介電層及元件層。然後可在曝露或部分蝕刻晶圓或基板之後終止該雷射蝕刻製程。然後可使用切割製程之電漿蝕刻部分來蝕刻穿過大部分的晶圓或基板(諸如穿過大塊單結晶矽),以產生晶粒或晶片單分或切割。
習知晶圓切割方法包括基於純機械分離之金剛石鋸切、初始雷射劃線及後續金剛石鋸切割或奈秒或皮秒雷射切割。對於諸如50微米厚之大塊矽單分的薄晶圓或基板單分而言,該等習知方法僅產生不良製程品質。在自薄晶圓或基板單分晶粒時可能面臨之一些挑戰可包括:在不同層之間形成微裂或分層、切削無機介電層、保持嚴格之鋸口寬度控制或精確之切除深度控制。本發明之實施例包括混合雷射劃線及電漿蝕刻晶粒單分方法,該方法可適用於克服上述挑戰中之一或多者。
根據本發明之一實施例,基於飛秒之雷射劃線與電漿蝕刻之組合用於將半導體晶圓切割成個別化或單分化之積體電路。在一實施例中,基於飛秒之雷射劃線被用作基本(若
非完全)非熱製程。舉例而言,該基於飛秒之雷射劃線可定位於無熱損壞或可忽略熱損壞之區域。在一實施例中,本文之方法用於單分具有超低介電常數薄膜之積體電路。藉由習知切割,可能需要鋸減速以適應此類低介電常數薄膜。此外,現通常在切割之前使半導體晶圓變薄。因此,在一實施例中,將遮罩佈局圖樣與使用基於飛秒之雷射之部分晶圓劃線組合,並繼之以電漿蝕刻製程係現今實用的。在一實施例中,藉由雷射直接寫入可排除對光阻層之微影佈局圖樣操作之需要,且可以極低之成本實施。在一實施例中,通孔型矽蝕刻用於在電漿蝕刻環境中完成該切割製程。
因此,在本發明之一態樣中,基於飛秒之雷射劃線與電漿蝕刻之組合可用於將半導體晶圓切割成單分化之積體電路。第1圖圖示根據本發明之一實施例,待切割之半導體晶圓的俯視圖。第2圖圖示根據本發明之一實施例的待切割之半導體晶圓的俯視圖,該半導體晶圓具有切割遮罩形成在半導體晶圓上。
參看第1圖,半導體晶圓100具有包括積體電路之複數個區域102。區域102由垂直切割道104及水平切割道106分隔。切割道104及切割道106為不含積體電路之半導體晶圓之區域,且將切割道104及切割道106設計為切割晶圓所沿著的位置。本發明之一些實施例涉及利用基於飛秒之雷射劃線與電漿蝕刻技術之組合,以沿該等切割道穿過半導體晶圓切割溝道,以使得該等晶粒被分成個別晶片或晶粒。由於雷射劃線與電漿蝕刻製程皆不依賴於結晶結構定向,故待
切割之半導體晶圓之結晶結構對達成穿過該晶圓之垂直溝道並不重要。
參看第2圖,半導體晶圓100具有沈積於半導體晶圓100上之遮罩200。在一實施例中,該遮罩以習知方式經沈積,以達成約4-10微米厚之層。用雷射劃線製程將遮罩200及半導體晶圓100之一部分佈局圖樣,以沿切割道104及切割道106界定切割半導體晶圓100所在之位置(例如間隙202及204)。半導體晶圓100之積體電路區域由遮罩200覆蓋及保護。遮罩200之區域206經定位以使得在後續刻蝕製程期間,積體電路不被該蝕刻製程降級。在區域206之間形成水平間隙204及垂直間隙202,以界定將在蝕刻製程期間被蝕刻以最終切割半導體晶圓100之區域。
第3圖為根據本發明之一實施例,表示切割半導體晶圓之方法之操作的流程圖300,該半導體晶圓包括複數個積體電路。第4A圖至第4C圖圖示根據本發明之一實施例,在執行切割該半導體晶圓之方法期間,包括複數個積體電路之半導體晶圓的橫截面圖,該等橫截面圖對應於流程圖300之操作。
參看流程圖300之操作302以及相應第4A圖,遮罩402形成於半導體晶圓或基板404上方。遮罩402由覆蓋且保護積體電路406之層組成,積體電路406形成於半導體晶圓404之表面上。遮罩402亦覆蓋介入切割道407,介入切割道407形成於積體電路406中之每一者之間。
根據本發明之一實施例,形成遮罩402包括:形成
諸如(但不限於)光阻層或自交系(I-line)佈局圖樣層之層。舉例而言,諸如光阻層之聚合物層可由另外適用於微影製程之材料組成。在一實施例中,該光阻層由正光阻材料組成,諸如(但不限於)248奈米(nm)抗蝕劑、193nm抗蝕劑、157nm抗蝕劑、極紫外線(extreme ultra-violet;EUV)抗蝕劑或含有重氮基萘醌敏化劑之酚樹脂介質。在另一實施例中,該光阻層由負光阻材料組成,諸如(但不限於)聚順異戊二烯及聚桂皮酸乙烯酯。
在一實施例中,半導體晶圓或基板404由適合於經受製造程序之材料組成,且可將半導體處理層適當安置於該材料上。舉例而言,在一實施例中,半導體晶圓或基板404由基於IV族之材料組成,諸如(但不限於)結晶矽、鍺或矽/鍺。在一特定實施例中,提供半導體晶圓404包括:提供單晶矽基板。在一特定實施例中,該單晶矽基板摻雜有雜質原子。在另一實施例中,半導體晶圓或基板404由III-V族材料組成,諸如用於發光二極體(light emitting diode;LED)之製造之III-V族材料基板。
在一實施例中,半導體晶圓或基板404具有安置於半導體晶圓或基板404上或半導體晶圓或基板404中之一陣列之半導體元件,該等半導體元件作為積體電路406之一部分。此類半導體元件之實例包括(但不限於):在矽基板中製造且包裝於介電層中之記憶體元件或互補金氧半導體(complimentary metal-oxide-semiconductor;CMOS)電晶體。在該等元件或電晶體上方及周圍介電層中可形成複數個金屬互
連,且該等金屬互連可用於電氣耦合該等元件或電晶體,以形成積體電路406。組成切割道407之材料可與用於形成積體電路406之彼等材料相似或相同。舉例而言,切割道407可由多層介電材料、半導體材料及金屬化組成。在一實施例中,切割道407中之一或多者包括類似於積體電路406之實際元件的測試元件。
參看流程圖300之操作304以及相應第4B圖,用基於飛秒之雷射劃線製程將遮罩402佈局圖樣,以提供具有間隙410之經佈局圖樣之遮罩408,從而曝露積體電路406之間的半導體晶圓或基板404之區域。因此,基於飛秒之雷射劃線製程用於移除最初形成於積體電路406之間的切割道407之材料。根據本發明之一實施例,用基於飛秒之雷射劃線製程將遮罩402佈局圖樣包括:形成溝道412部分進入積體電路406之間的半導體晶圓404之區域,如第4B圖所示。
在一實施例中,用雷射劃線製程將遮罩408佈局圖樣包括:使用具有飛秒範圍內之脈衝寬度之雷射。具體而言,具有在可見光譜加紫外線(ultra-violet;UV)及紅外線(infra-red;IR)範圍(總計寬頻光譜)內之波長的雷射可用於提供基於飛秒之雷射,亦即具有量級為飛秒(10-15秒)之脈衝寬度的雷射。在一實施例中,切除不依賴於或基本不依賴於波長,且因此適合於複合薄膜,諸如遮罩402之薄膜、切割道407之薄膜及可能一部分半導體晶圓或基板404之薄膜。
第5圖圖示根據本發明之一實施例,使用飛秒範圍內之雷射脈衝與較長頻率比較之效果。參看第5圖,與較長
脈衝寬度比較(例如,藉由皮秒處理通孔500B產生損壞502B及藉由奈秒處理通孔500A產生顯著損壞502A),使用具有飛秒範圍內之脈衝寬度的雷射緩解或消除了熱損壞問題(例如,藉由飛秒處理通孔500C最小化至無損壞502C)。在形成通孔500C期間損壞的消除或緩解可歸因於缺乏低能量再耦合(如見於基於皮秒之雷射切除)或熱平衡(如見於基於奈秒之雷射切除),如第5圖所示。
雷射參數選擇(諸如脈衝寬度)可為研發成功之雷射劃線及切割製程之關鍵,成功之雷射劃線及切割製程將切削、微裂及分層減至最少,以達成平整之雷射劃線切口。雷射劃線切口愈平整,則用於最終之晶粒單分而執行之蝕刻製程愈平穩。在半導體元件晶圓中,許多不同材料類型(例如導體、絕緣體、半導體)及厚度之功能層通常安置於半導體元件晶圓上。此類材料可包括(但不限於)諸如聚合物之有機材料、金屬或諸如二氧化矽及氮化矽之無機介電質。
安置於晶圓或基板上之個別積體電路之間的切割道可包括與該等積體電路本身相似或相同之層。舉例而言,第6圖圖示根據本發明之一實施例,材料之堆疊的橫截面圖,該等材料可用於半導體晶圓或基板之切割道區域中。
參看第6圖,切割道區域600包括矽基板之頂部部分602、第一二氧化矽層604、第一蝕刻終止層606、第一低介電常數介電層608(例如,具有小於二氧化矽之介電常數4.0之介電常數)、第二蝕刻終止層610、第二低介電常數介電層612、第三蝕刻終止層614、無摻雜矽玻璃(undoped silica
glass;USG)層616、第二二氧化矽層618及光阻層620,其中圖示相對厚度。銅金屬622安置於第一蝕刻終止層606與第三蝕刻終止層614之間,且穿過第二蝕刻終止層610。在一特定實施例中,第一蝕刻終止層606、第二蝕刻終止層610及第三蝕刻終止層614由氮化矽組成,而低介電常數介電層608及612由摻碳氧化矽材料組成。
在習知雷射照射(諸如基於奈秒或基於皮秒之雷射照射)下,切割道600之材料在光吸收及切除機制方面表現相當不同。舉例而言,諸如二氧化矽之介電層在正常情況下對所有市售之雷射波長均為基本透明。相反,金屬、有機物(例如低介電常數材料)及矽能夠非常容易地耦合光子,尤其回應於基於奈秒或基於皮秒之雷射照射。舉例而言,第7圖包括根據本發明之一實施例,結晶矽(c-Si,702)、銅(Cu,704)、結晶二氧化矽(c-SiO2,706)及非晶二氧化矽(a-SiO2,708)之吸收係數隨著光子能變化的曲線圖700。第8圖為方程式800,該方程式展示給定雷射之雷射強度與雷射脈衝能量、雷射脈衝寬度及雷射光束半徑之函數關係。
在一實施例中,利用方程式800及吸收係數之曲線圖700,可選擇基於飛秒雷射之製程之參數,以對無機及有機介電質、金屬及半導體具有基本共同之切除效應,儘管此類材料之一般能量吸收特徵在某些條件下可大大不同。舉例而言,二氧化矽之吸收率為非線性的,且在適當雷射切除參數下二氧化矽之吸收率可與有機介電質、半導體及金屬之吸收率更加一致。在一個此類實施例中,高強度及短脈衝寬度之
基於飛秒之雷射製程用於切除層之堆疊,該層之堆疊包括二氧化矽層,及有機介電質、半導體或金屬中之一或多者。在一特定實施例中,約小於或等於400飛秒之脈衝用於基於飛秒之雷射照射製程,以移除遮罩、切割道及一部分矽基板。
相反,若選擇非最佳雷射參數,則在涉及無機介電質、有機介電質、半導體或金屬中之兩者或兩者以上之堆疊結構中,雷射切除製程可造成分層問題。舉例而言,雷射穿透高帶隙能量介電質(諸如具有約9eV帶隙之二氧化矽),而無可量測吸收。然而,該雷射能可在下方的金屬層或矽層中被吸收,從而引起該金屬層或矽層之顯著汽化。該汽化可產生高壓,以升起上覆的二氧化矽介電層,且可能造成嚴重的層間分層及微裂化。在一實施例中,儘管基於皮秒之雷射照射製程在複合堆疊中導致微裂化及分層,但已證明,基於飛秒之雷射照射製程並不導致相同材料堆疊之微裂化或分層。
為了能夠直接切除介電層,介電材料可能需要發生離子化,以使得該等介電材料藉由強吸收光子而與導電材料表現相似。該吸收可在最終切除介電層之前阻礙大部分雷射能穿透至下方的矽層或金屬層。在一實施例中,當雷射強度足夠高以致在無機介電材料中引發光子離子化及撞擊離子化時,該無機介電質之離子化係可行的。
根據本發明之一實施例,合適的基於飛秒之雷射製程之特徵為:高峰值強度(照射度),該高峰值強度通常在不同材料中導致非線性相互作用。在一個此類實施例中,儘
管脈衝寬度較佳在100飛秒至400飛秒之範圍內,但飛秒雷射源具有近似在10飛秒至500飛秒之範圍內的脈衝寬度。在一實施例中,儘管波長較佳在540奈米至250奈米之範圍內,但飛秒雷射源具有近似在1570奈米至200奈米之範圍內的波長。在一實施例中,儘管焦點較佳近似在5微米至10微米之範圍內,但雷射及相應光學系統在工作表面處提供近似在3微米至15微米之範圍內的焦點。
在該工作表面處之空間光束剖面可為單模(高斯)或具有頂帽形狀之剖面。在一實施例中,儘管脈衝重複率較佳近似在500kHz至5MHz之範圍內,但雷射源具有近似在200kHz至10MHz範圍內之脈衝重複率。在一實施例中,儘管脈衝能量較佳近似在1uJ至5uJ之範圍內,但雷射源在工作表面處傳遞近似在0.5uJ至100uJ之範圍內的脈衝能量。在一實施例中,儘管速度較佳近似在600mm/sec至2m/sec之範圍內,但雷射劃線製程以近似在500mm/sec至5m/sec之範圍內的速度沿工件表面執行。
劃線製程可僅單程執行或多程執行,但在一實施例中,較佳1至2程。在一實施例中,工件之劃線深度近似在5微米至50微米深之範圍內,較佳近似在10微米至20微米深之範圍內。雷射可以給定之脈衝重複率施加於一系列單一脈衝中,或一系列脈衝猝發中。在一實施例中,儘管在矽晶圓劃線/切割中在元件/矽介面處所量測之鋸口寬度較佳近似在6微米至10微米之範圍內,但所產生雷射光束之鋸口寬度近似在2微米至15微米之範圍內。
可選擇具有以下益處及優點之雷射參數:諸如提供足夠高之雷射強度,以達成無機介電質(例如二氧化矽)之離子化,且在直接切除無機介電質之前將由底層損壞造成的分層及切削減至最少。又,可選擇參數,以藉由精確控制之切除寬度(例如鋸口寬度)及深度提供用於工業應用之有意義的製程產量。如上所述,與基於皮秒及基於奈秒之雷射切除製程相比,基於飛秒之雷射遠遠更適合於提供此類優點。然而,即使在基於飛秒之雷射切除之光譜中,某些波長亦可提供較其他波長更佳之效能。舉例而言,在一實施例中,與具有更接近紅外線範圍或在紅外線範圍內之波長的基於飛秒之雷射製程相比,具有更接近紫外線範圍或在紫外線範圍內之波長的基於飛秒之雷射製程提供更平整之切除製程。在一特定此類實施例中,適合於半導體晶圓或基板劃線之基於飛秒之雷射製程係基於具有約小於或等於540奈米之波長的雷射。在一特定此類實施例中,使用約小於或等於400飛秒之脈衝之雷射,該雷射具有約小於或等於540奈米之波長。然而,在一替代實施例中,使用雙雷射波長(例如,紅外線雷射與紫外線雷射之組合)。
參看流程圖300之操作306及相應第4C圖,穿過經佈局圖樣之遮罩408中的間隙410將半導體晶圓404蝕刻,以單分積體電路406。根據本發明之一實施例,蝕刻半導體晶圓404包括:蝕刻用基於飛秒之雷射劃線製程形成之溝道412,以最終完全蝕刻穿過半導體晶圓404,如第4C圖所示。
在一實施例中,蝕刻半導體晶圓404包括:使用電
漿蝕刻製程。在一實施例中,使用矽通孔(through-silicon-via)型蝕刻製程。舉例而言,在一特定實施例中,半導體晶圓404之材料之蝕刻速度大於25微米/分鐘。超高密度電漿源可用於晶粒單分製程之電漿蝕刻部分。適於執行此類電漿蝕刻製程之處理腔室之實例為可購自Applied Materials(Sunnyvale,CA,USA)之Applied Centura® SilviaTM Etch系統。Applied Centura® SilviaTM Etch系統組合電容性與感應射頻(radio frequency;RF)耦合,較僅電容性耦合甚至磁性增強所提供改良之可能情況,電容性與感應射頻耦合給予離子密度及離子能量更多獨立控制。此組合使離子密度能夠與離子能量有效地去耦,以便即使在極低壓力下亦可達成不具有可能有害之高直流(direct current;DC)偏壓位準之相對較高密度的電漿。此舉產生異常寬之製程視窗。然而,可使用能夠蝕刻矽之任何電漿蝕刻腔室。在一示例性實施例中,深矽蝕刻用於以大於約40%之習知矽蝕刻速度之蝕刻速度蝕刻單結晶矽基板或晶圓404,同時維持基本精確之剖面控制及實質上無扇形之側壁。在一特定實施例中,使用矽通孔型蝕刻製程。該蝕刻製程係基於反應性氣體所產生之電漿,該反應性氣體通常為氟基氣體,諸如SF6、C4F8、CHF3、XeF2,或能夠以相對較快蝕刻速度蝕刻矽之任何其他反應性氣體。在一實施例中,在單分製程後移除遮罩層408,如第4C圖所示。
因此,再次參看流程圖300及第4A圖至第4C圖,可藉由初始雷射切除穿過遮罩層、穿過晶圓切割道(包括金屬化)且部分進入矽基板而執行晶圓切割。可在飛秒範圍內
選擇該雷射脈衝寬度。然後可藉由後續穿矽電漿深蝕刻完成晶粒單分。根據本發明之一實施例,下文結合第9A圖至第9D圖描述用於切割之材料堆疊之特定實例。
參看第9A圖,用於混合雷射切除及電漿蝕刻切割之材料堆疊包括遮罩層902、元件層904及基板906。遮罩層、元件層及基板安置於晶粒黏著薄膜908上方,晶粒黏著薄膜908附著至襯帶910。在一實施例中,遮罩層902為光阻層,諸如上文結合遮罩402所述之光阻層。元件層904包括安置於一或多個金屬層(諸如銅層)及一或多個低介電常數介電層(諸如摻碳氧化物層)上方的無機介電層(諸如二氧化矽)。元件層904亦包括佈置於積體電路之間的切割道,該等切割道包括與積體電路相同或相似之層。基板906為大塊單結晶矽基板。
在一實施例中,在大塊單結晶矽基板906附著至晶粒黏著薄膜908之前,自背側使大塊單結晶矽基板906變薄。可藉由背側研磨製程執行該變薄步驟。在一實施例中,使大塊單結晶矽基板906變薄至近似在50-100微米範圍內之厚度。在一實施例中,重要的是應注意,在雷射切除及電漿蝕刻切割製程之前執行該變薄。在一實施例中,光阻層902具有約5微米之厚度,而元件層904具有近似在2-3微米範圍內之厚度。在一實施例中,晶粒黏著薄膜908(或能夠將變薄或薄的晶圓或基板接合至襯帶910之任何合適之替代物)具有約20微米之厚度。
參看第9B圖,用基於飛秒之雷射劃線製程912將遮
罩902、元件層904及一部分基板906佈局圖樣,以在基板906中形成溝道914。參看第9C圖,穿矽電漿深蝕刻製程916用於將溝道914向下延伸至晶粒黏著薄膜908,從而曝露晶粒黏著薄膜908之頂部部分且單分矽基板906。在穿矽電漿深蝕刻製程916期間,藉由光阻層902保護元件層904。
參看第9D圖,單分製程可進一步包括:將晶粒黏著薄膜908佈局圖樣,從而曝露襯帶910之頂部部分且單分晶粒黏著薄膜908。在一實施例中,藉由雷射製程或藉由蝕刻製程單分晶粒黏著薄膜。其他實施例可包括:隨後自襯帶910移除基板906之單分化之部分(例如,作為個別積體電路)。在一實施例中,單分化之晶粒黏著薄膜908保留在基板906之單分化之部分之背側上。其他實施例可包括:自元件層904移除遮罩光阻層902。在一替代實施例中,在基板906比約50微米薄之情況下,雷射切除製程912用於徹底單分基板906,而無需使用額外電漿製程。
在一實施例中,在單分晶粒黏著薄膜908之後,自元件層904移除遮罩光阻層902。在一實施例中,自襯帶910移除單分化之積體電路,以用於封裝。在一個此類實施例中,經佈局圖樣之晶粒黏著薄膜908保留在每一積體電路之背側上且包括在最終之封裝中。然而,在另一實施例中,在單分製程期間或在單分製程之後移除經佈局圖樣之晶粒黏著薄膜908。
再次參看第4A圖至第4C圖,可藉由具有約10微米或更小之寬度的切割道407分隔該複數個積體電路406。利
用基於飛秒之雷射劃線方法,可在積體電路之佈局中使此緊密作用得以實現,此舉至少部分歸因於嚴密的雷射剖面控制。舉例而言,第10圖圖示根據本發明之一實施例,藉由使用與習知切割相比較窄之切割道達成的半導體晶圓或基板上之緊密作用,該習知切割可限於最小寬度。
參看第10圖,藉由使用與習知切割相比較窄之切割道(例如,在佈局1002中約10微米或更小之寬度)達成半導體晶圓上之緊密作用,該習知切割可限於最小寬度(例如,在佈局1000中約70微米或更大之寬度)。然而,應理解,即使在其他方面可藉由基於飛秒之雷射劃線製程來實現,並非總是期望將切割道寬度減少至小於10微米。舉例而言,一些應用可能需要至少40微米之切割道寬度,以在分隔積體電路之切割道中製造虛擬元件或測試元件。
再次參看第4A圖至第4C圖,該複數個積體電路406可以非限制性佈局佈置在半導體晶圓或基板404上。舉例而言,第11圖圖示允許較緊密堆積之自由形式積體電路佈置。根據本發明之一實施例,與柵格對準方法相比,該較緊密堆積可提供每晶圓更多之晶粒。參看第11圖,自由形式佈局(例如半導體晶圓或基板1102上之非限制性佈局)允許較緊密堆積,且因此與柵格對準方法(例如,半導體晶圓或基板1100上之限制性佈局)相比允許每晶圓更多之晶粒。在一實施例中,雷射切除及電漿蝕刻單分製程之速度與晶粒大小、佈局或切割道數目無關。
單一製程工具可經設置以執行混合基於飛秒之雷射
切除及電漿蝕刻單分製程中之許多或全部操作。舉例而言,第12圖圖示根據本發明之一實施例,用於晶圓或基板之雷射及電漿切割之工具佈局的方塊圖。
參看第12圖,製程工具1200包括工廠介面(factory interface;FI)1202,工廠介面1202具有與工廠介面1202耦合之複數個負載鎖室1204。群集工具1206與工廠介面1202耦合。群集工具1206包括一或多個電漿蝕刻腔室,諸如電漿蝕刻腔室1208。雷射劃線設備1210亦耦合至工廠介面1202。在一實施例中,製程工具1200之整體佔地面積可為約3500毫米(3.5公尺)×約3800毫米(3.8公尺),如第12圖所示。
在一實施例中,雷射劃線設備1210安放基於飛秒之雷射。基於飛秒之雷射適合於執行混合雷射及蝕刻單分製程之雷射切除部分,諸如上述之雷射切除製程。在一實施例中,雷射劃線設備1200中亦包括活動平臺,該活動平臺經設置以用於使晶圓或基板(或晶圓或基板之載體)相對於基於飛秒之雷射移動。在一特定實施例中,基於飛秒之雷射亦可活動。在一實施例中,雷射劃線設備1210之整體佔地面積可為約2240毫米×約1270毫米,如第12圖所示。
在一實施例中,一或多個電漿蝕刻腔室1208經設置以用於穿過經佈局圖樣之遮罩中的間隙而蝕刻晶圓或基板,以單分複數個積體電路。在一個此類實施例中,一或多個電漿蝕刻腔室1208經設置以執行深矽蝕刻製程。在一特定實施例中,一或多個電漿蝕刻腔室1208為Applied Centura® SilviaTM Etch系統,該系統可購自Applied Materials
(Sunnyvale,CA,USA)。可將該蝕刻腔室特定設計用於深矽蝕刻,該深矽蝕刻用於產生安放於單結晶矽基板或晶圓上或單結晶矽基板或晶圓中之單分化之積體電路。在一實施例中,電漿蝕刻腔室1208中包括高密度電漿源,以促進高的矽蝕刻速度。在一實施例中,製程工具1200之群集工具1206部分中包括超過一個的蝕刻腔室,以使單分或切割製程之高製造產量得以實現。
工廠介面1202可為合適大氣埠,該大氣埠通向帶有雷射劃線設備1210之外部製造設施與群集工具1206之間的介面。工廠介面1202可包括具有臂或葉片之機器人,該等機器人用於將晶圓(或晶圓之載體)自儲存單元(諸如前開口式晶圓盒)傳送至群集工具1206或雷射劃線設備1210或該兩者中。
群集工具1206可包括適合於執行單分方法中之功能的其他腔室。舉例而言,在一實施例中,群集工具1206包括沈積腔室1212,以代替額外之蝕刻腔室。沈積腔室1212可經設置以用於在晶圓或基板之雷射劃線之前在晶圓或基板之元件層上或上方沈積遮罩。在一個此類實施例中,沈積腔室1212適合於沈積光阻層。在另一實施例中,群集工具1206包括濕潤/乾燥站1214,以代替額外之蝕刻腔室。該濕潤/乾燥站可適合於清潔殘渣及碎片,或用於在基板或晶圓之雷射劃線及電漿蝕刻單分製程之後移除遮罩。在一實施例中,群集工具1206亦包括作為製程工具1200之部件的測量站。
本發明之實施例可提供為電腦程式產品或軟體,該
電腦程式產品或軟體可包括機器可讀取媒體,該機器可讀取媒體上儲存有指令,該等指令可用於程式化電腦系統(或其他電子元件)以執行根據本發明之實施例之製程。在一實施例中,該電腦系統與結合第12圖描述之製程工具1200耦合。機器可讀取媒體包括用於儲存或傳送由機器(例如電腦)讀取之形式之資訊的任何機構。舉例而言,機器可讀取(例如電腦可讀取)媒體包括機器(例如電腦)可讀取儲存媒體(例如唯讀記憶體(read only memory;ROM)、隨機存取記憶體(random access memory;RAM)、磁碟儲存媒體、光學儲存媒體、快閃記憶體元件等等)、機器(例如電腦)可讀取傳輸媒體(電氣、光學、聲學或其他傳播訊號形式(例如紅外訊號、數位訊號等等)),等等。
第13圖圖示以電腦系統1300為示例性形式之機器的圖形表示,在電腦系統1300內可執行一組指令,該等指令用於使機器執行本文所述方法中之任何一或多者。在替代實施例中,該機器可在區域網路(Local Area Network;LAN)、企業內部網路、企業外部網路或網際網路中連接(例如網路連接)至其他機器。該機器在客戶端-伺服器網路環境中可作為伺服器或客戶端機器工作,或在同級間(或分散式)網路環境中作為同級機器工作。該機器可為個人電腦(personal computer;PC)、平板PC、機上盒(set-top box;STB)、個人數位助理(Personal Digital Assistant;PDA)、蜂巢式電話、網路設備、伺服器、網路路由器、切換器或橋接器,或能夠執行指定該機器將要採取之動作之一組指令(順序或其他方式)
的任何機器。此外,儘管僅圖示單個機器,但術語「機器」亦應被視為包括個別或共同執行一組(或多組)指令以執行本文所述方法中之任何一或多者的機器(例如電腦)之任何集合。
示例性電腦系統1300包括處理器1302、主記憶體1304(例如唯讀記憶體(ROM)、快閃記憶體、諸如同步DRAM(SDRAM)或Rambus DRAM(RDRAM)之動態隨機存取記憶體(dynamic random access memory;DRAM)等等)、靜態記憶體1306(例如快閃記憶體、靜態隨機存取記憶體(static random access memory;SRAM)等等)及輔助記憶體1318(例如資料儲存元件),該等設備經由匯流排1330彼此通訊。
處理器1302表示一或多個通用處理元件,諸如微處理器、中央處理單元等等。更特定言之,處理器1302可為複雜指令集計算(complex instruction set computing;CISC)微處理器、精簡指令集計算(reduced instruction set computing;RISC)微處理器、超長指令字集(very long instruction word;VLIW)微處理器、實施其他指令集之處理器或實施指令集組合之處理器。處理器1302亦可為一或多個專用處理元件,諸如特殊應用積體電路(application specific integrated circuit;ASIC)、現場可程式化閘陣列(field programmable gate array;FPGA)、數位訊號處理器(digital signal processor;DSP)、網路處理器等等。處理器1302經設置以執行用於執行本文所述操作之處理邏輯1326。
電腦系統1300可進一步包括網路介面元件1308。
電腦系統1300亦可包括視訊顯示單元1310(例如液晶顯示器(liquid crystal display;LCD)、發光二極體(LED)顯示器或陰極射線管(cathode ray tube;CRT))、文數輸入元件1312(例如鍵盤)、遊標控制元件1314(例如滑鼠)及訊號產生元件1316(例如揚聲器)。
輔助記憶體1318可包括機器可存取儲存媒體(或更具體而言,電腦可讀取儲存媒體)1331,實施本文所述方法或功能中之任何一或多者的一或多組指令(例如軟體1322)儲存在機器可存取儲存媒體1331上。在電腦系統1300執行軟體1322期間,軟體1322亦可完全或至少部分地常駐於主記憶體1304內部及/或處理器1302內部,主記憶體1304及處理器1302亦構成機器可讀取儲存媒體。可進一步經由網路介面元件1308在網路1320上發送或接收軟體1322。
儘管在示例性實施例中將機器可存取儲存媒體1331圖示為單個媒體,但術語「機器可讀取儲存媒體」應被視為包括儲存一或多組指令之單個媒體或多個媒體(例如集中式或分散式資料庫,及/或相關聯之快取記憶體及伺服器)。術語「機器可讀取儲存媒體」亦應被視為包括能夠儲存或編碼由機器執行且使機器執行本發明之方法中任何一或多者之一組指令的任何媒體。因此,術語「機器可讀取儲存媒體」應被視為包括(但不限於)固態記憶體,以及光學及磁性媒體。
根據本發明之一實施例,機器可存取儲存媒體具有儲存在機器可存取儲存媒體上之指令,該等指令使資料處理系統執行切割具有複數個積體電路之半導體晶圓的方法。該
方法包括在半導體晶圓上方形成遮罩,該遮罩由覆蓋且保護積體電路之一層組成。然後用基於飛秒之雷射劃線製程將該遮罩佈局圖樣,以提供具有間隙之經佈局圖樣之遮罩。在積體電路之間曝露該半導體晶圓之區域。然後穿過經佈局圖樣之遮罩中的間隙將半導體晶圓蝕刻,以單分積體電路。
因此,本文揭示了切割半導體晶圓之方法,其中每一晶圓具有複數個積體電路。根據本發明之一實施例,切割具有複數個積體電路之半導體晶圓的方法包括以下步驟:在該半導體晶圓上方形成遮罩,該遮罩由覆蓋且保護該等積體電路之一層組成。該方法亦包括以下步驟:用基於飛秒之雷射劃線製程將該遮罩佈局圖樣,以提供具有間隙之經佈局圖樣之遮罩,從而曝露該等積體電路之間的半導體晶圓之區域。該方法亦包括以下步驟:穿過經佈局圖樣之遮罩中的間隙將該半導體晶圓蝕刻,以單分積體電路。在一實施例中,用基於飛秒之雷射劃線製程將該遮罩佈局圖樣包括:在該等積體電路之間的半導體晶圓之區域中形成溝道。在該實施例中,蝕刻半導體晶圓包括:蝕刻由雷射劃線製程形成之溝道。
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Claims (10)
- 一種切割包含複數個積體電路之一半導體晶圓的方法,該方法包含以下步驟:在該半導體晶圓上方形成一遮罩,該遮罩包含覆蓋且保護該等積體電路之一層;用一雷射劃線製程將該遮罩及該半導體晶圓之一部分佈局圖樣,以提供一經佈局圖樣的遮罩並於該等積體電路之間形成部份進入但未穿過該半導體晶圓之複數溝槽,其中該等溝槽之每一者具有一寬度;以及經由該等溝槽電漿蝕刻該半導體晶圓以形成對應的溝槽延伸部及單分該等積體電路,其中該等對應的溝槽延伸部之每一者具有該寬度。
- 如請求項1所述之方法,其中電漿蝕刻該半導體晶圓之步驟包含以下步驟:使用一高密度電漿蝕刻製程。
- 如請求項1所述之方法,其中形成該遮罩之步驟包含以下步驟:形成一層,該層選自由一光阻層及一自交系佈局圖樣層組成之群組。
- 如請求項1所述之方法,其中該複數個積體電路由複數切割道分隔,該等切割道具有10微米或更小之一寬度,該寬度係在一元件層/基板介面處量測。
- 如請求項1所述之方法,其中該複數個積體電路具有一非限制性佈局。
- 一種切割包含複數個積體電路之一半導體晶圓的方法,該方法包含以下步驟:在一矽基板上方形成一聚合物層,該聚合物層覆蓋且保護安置於該矽基板上之複數積體電路,該等積體電路包含一個二氧化矽層,該二氧化矽層安置於一低介電常數材料層及一銅層上方;用一雷射劃線製程將該聚合物層、該二氧化矽層、該低介電常數材料層、該銅層及該矽基板之一部分佈局圖樣,以於該等半導體電路間形成部份進入但未穿過該矽基板之複數溝槽,其中該等溝槽之每一者具有一寬度;以及經由該等溝槽電漿蝕刻該矽基板以形成對應的溝槽延伸部及單分該等積體電路,其中該等對應的溝槽延伸部之每一者具有該寬度。
- 如請求項6所述之方法,其中用該雷射劃線製程將該二氧化矽層、該低介電常數材料層、該銅層及該矽基板之該部分佈局圖樣之步驟包含以下步驟:在切除該低介電常數材料層及該銅層之前切除該二氧化矽層。
- 如請求項6所述之方法,其中電漿蝕刻該矽基板之步驟包含以下步驟:使用一高密度穿矽電漿蝕刻製程。
- 如請求項6所述之方法,其中該等積體電路由複數切割道分隔彼此,該等切割道具有10微米或更小之一寬度。
- 如請求項6所述之方法,其中該複數個積體電路具有一非限制性佈局。
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