JP2009188378A - パルス列アニーリング方法および装置 - Google Patents

パルス列アニーリング方法および装置 Download PDF

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Publication number
JP2009188378A
JP2009188378A JP2008287019A JP2008287019A JP2009188378A JP 2009188378 A JP2009188378 A JP 2009188378A JP 2008287019 A JP2008287019 A JP 2008287019A JP 2008287019 A JP2008287019 A JP 2008287019A JP 2009188378 A JP2009188378 A JP 2009188378A
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Prior art keywords
substrate
energy
pulse
pulses
region
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JP2008287019A
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Japanese (ja)
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JP2009188378A5 (https=
Inventor
Stephen Moffatt
モファット スティーブン
Joseph Michael Ranish
マイケル ラニッシュ ジョセフ
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
JP2008287019A 2007-11-08 2008-11-07 パルス列アニーリング方法および装置 Pending JP2009188378A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98655007P 2007-11-08 2007-11-08
US12/203,696 US20090120924A1 (en) 2007-11-08 2008-09-03 Pulse train annealing method and apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012034741A Division JP2012169632A (ja) 2007-11-08 2012-02-21 パルス列アニーリング方法および装置

Publications (2)

Publication Number Publication Date
JP2009188378A true JP2009188378A (ja) 2009-08-20
JP2009188378A5 JP2009188378A5 (https=) 2012-01-12

Family

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Family Applications (4)

Application Number Title Priority Date Filing Date
JP2008287019A Pending JP2009188378A (ja) 2007-11-08 2008-11-07 パルス列アニーリング方法および装置
JP2012034741A Pending JP2012169632A (ja) 2007-11-08 2012-02-21 パルス列アニーリング方法および装置
JP2016087816A Active JP6525919B6 (ja) 2007-11-08 2016-04-26 パルス列アニーリング方法および装置
JP2017125048A Active JP6672222B2 (ja) 2007-11-08 2017-06-27 パルス列アニーリング方法および装置

Family Applications After (3)

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JP2012034741A Pending JP2012169632A (ja) 2007-11-08 2012-02-21 パルス列アニーリング方法および装置
JP2016087816A Active JP6525919B6 (ja) 2007-11-08 2016-04-26 パルス列アニーリング方法および装置
JP2017125048A Active JP6672222B2 (ja) 2007-11-08 2017-06-27 パルス列アニーリング方法および装置

Country Status (7)

Country Link
US (2) US20090120924A1 (https=)
EP (1) EP2058842A3 (https=)
JP (4) JP2009188378A (https=)
KR (6) KR101176696B1 (https=)
CN (2) CN102403206B (https=)
SG (2) SG152215A1 (https=)
TW (5) TWI426578B (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
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JP2011159680A (ja) * 2010-01-29 2011-08-18 Dainippon Screen Mfg Co Ltd 熱処理方法および熱処理装置
JP2011243836A (ja) * 2010-05-20 2011-12-01 Sumitomo Heavy Ind Ltd レーザアニール方法及びレーザアニール装置
JP2012156390A (ja) * 2011-01-27 2012-08-16 Sumitomo Heavy Ind Ltd レーザアニール方法及びレーザアニール装置
JP2012169632A (ja) * 2007-11-08 2012-09-06 Applied Materials Inc パルス列アニーリング方法および装置
JP2013048236A (ja) * 2011-08-24 2013-03-07 Ultratech Inc ＧａＮＬＥＤ用高速熱アニール
JP2014090045A (ja) * 2012-10-30 2014-05-15 Sanken Electric Co Ltd イオン導入層の活性化方法、および、半導体装置の製造方法
US8787741B2 (en) 2009-04-28 2014-07-22 Dainippon Screen Mfg. Co., Ltd. Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
US9498845B2 (en) 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
JP2017177165A (ja) * 2016-03-30 2017-10-05 株式会社ディスコ レーザー加工方法
JP2019160860A (ja) * 2018-03-08 2019-09-19 株式会社ディスコ チャックテーブルおよびチャックテーブルを備えた加工装置
JPWO2023032450A1 (https=) * 2021-09-02 2023-03-09
JP2023536376A (ja) * 2021-07-06 2023-08-25 エーピーエス リサーチ コーポレーション レーザー熱処理装置及びレーザー熱処理方法

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