CN110181165B - 激光预热退火系统和方法 - Google Patents
激光预热退火系统和方法 Download PDFInfo
- Publication number
- CN110181165B CN110181165B CN201910446747.2A CN201910446747A CN110181165B CN 110181165 B CN110181165 B CN 110181165B CN 201910446747 A CN201910446747 A CN 201910446747A CN 110181165 B CN110181165 B CN 110181165B
- Authority
- CN
- China
- Prior art keywords
- laser
- wavelength
- light source
- spot
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000007493 shaping process Methods 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 21
- 230000001360 synchronised effect Effects 0.000 claims abstract description 5
- 238000009826 distribution Methods 0.000 claims description 54
- 241001270131 Agaricus moelleri Species 0.000 claims description 18
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000004913 activation Effects 0.000 abstract description 20
- 238000012545 processing Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 32
- 238000005224 laser annealing Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 238000000265 homogenisation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008358 core component Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910446747.2A CN110181165B (zh) | 2019-05-27 | 2019-05-27 | 激光预热退火系统和方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910446747.2A CN110181165B (zh) | 2019-05-27 | 2019-05-27 | 激光预热退火系统和方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110181165A CN110181165A (zh) | 2019-08-30 |
CN110181165B true CN110181165B (zh) | 2021-03-26 |
Family
ID=67718033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910446747.2A Active CN110181165B (zh) | 2019-05-27 | 2019-05-27 | 激光预热退火系统和方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110181165B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111952160B (zh) * | 2020-08-17 | 2024-06-11 | 北京中科镭特电子有限公司 | 一种激光退火装置 |
CN112435921B (zh) * | 2020-11-05 | 2024-05-17 | 北京华卓精科科技股份有限公司 | 一种功率器件的激光退火方法和激光退火系统 |
CN112435920B (zh) * | 2020-11-05 | 2024-02-23 | 北京华卓精科科技股份有限公司 | 一种长波长激光退火方法及装置 |
CN112501425B (zh) * | 2020-11-27 | 2021-08-27 | 山东大学 | 一种具有反高斯分布冲击波强度的激光表面强化方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104392914A (zh) * | 2014-12-03 | 2015-03-04 | 苏州德龙激光股份有限公司 | 双波长激光退火装置及其方法 |
JP2019046919A (ja) * | 2017-08-31 | 2019-03-22 | 株式会社ナ・デックス | レーザ光合成装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7279721B2 (en) * | 2005-04-13 | 2007-10-09 | Applied Materials, Inc. | Dual wavelength thermal flux laser anneal |
US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
CN105074875B (zh) * | 2013-03-07 | 2018-09-18 | 三菱电机株式会社 | 激光退火装置、半导体装置的制造方法 |
US9343307B2 (en) * | 2013-12-24 | 2016-05-17 | Ultratech, Inc. | Laser spike annealing using fiber lasers |
JP2016078047A (ja) * | 2014-10-14 | 2016-05-16 | 株式会社アマダホールディングス | ダイレクトダイオードレーザ加工装置及びこれを用いた板金加工方法 |
CN106158609B (zh) * | 2015-03-31 | 2019-07-23 | 上海微电子装备(集团)股份有限公司 | 一种激光退火装置及其退火方法 |
CN106935491B (zh) * | 2015-12-30 | 2021-10-12 | 上海微电子装备(集团)股份有限公司 | 一种激光退火装置及其退火方法 |
CN108406088B (zh) * | 2017-02-10 | 2020-04-10 | 上海微电子装备(集团)股份有限公司 | 激光退火装置及其退火方法 |
KR102342848B1 (ko) * | 2017-04-21 | 2021-12-23 | 삼성전자주식회사 | 레이저 어닐링 장비 |
-
2019
- 2019-05-27 CN CN201910446747.2A patent/CN110181165B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104392914A (zh) * | 2014-12-03 | 2015-03-04 | 苏州德龙激光股份有限公司 | 双波长激光退火装置及其方法 |
JP2019046919A (ja) * | 2017-08-31 | 2019-03-22 | 株式会社ナ・デックス | レーザ光合成装置 |
Also Published As
Publication number | Publication date |
---|---|
CN110181165A (zh) | 2019-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110181165B (zh) | 激光预热退火系统和方法 | |
US11820119B2 (en) | Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated | |
US7674999B2 (en) | Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system | |
US8309474B1 (en) | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication | |
US9653299B2 (en) | Semiconductor device producing method | |
US9786562B2 (en) | Method and device for cutting wafers | |
CN109686686B (zh) | 激光热处理装置及激光热处理方法 | |
JP6910742B2 (ja) | レーザアニール方法及びレーザアニール装置 | |
JP2005136218A (ja) | 不純物活性化方法及びレーザ照射装置 | |
CN103521934A (zh) | 激光切片方法 | |
TWI515797B (zh) | 雷射退火裝置、半導體裝置之製造方法 | |
US9302348B2 (en) | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication | |
KR20140126689A (ko) | 레이저 어닐장치 및 레이저 어닐방법 | |
CN104752174A (zh) | 一种激光退火装置及方法 | |
JP2016127157A (ja) | レーザアニール装置及び半導体素子の製造方法 | |
TWI720639B (zh) | 切割半導體材料的方法及鐳射切割裝置 | |
JP5661009B2 (ja) | 半導体装置の製造方法 | |
CN110216370B (zh) | 激光退火方法和系统 | |
JP5660880B2 (ja) | レーザアニール方法 | |
CN209747455U (zh) | 激光热处理装置 | |
KR20230007938A (ko) | 레이저 열처리장치 및 레이저 열처리방법 | |
CN112435921B (zh) | 一种功率器件的激光退火方法和激光退火系统 | |
CN112435920A (zh) | 一种长波长激光退火方法及装置 | |
JP2005136365A (ja) | レーザ照射装置及びレーザ照射方法 | |
KR102238080B1 (ko) | 레이저 어닐 장치 및 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Jiang Yiming Inventor after: Chen Jing Inventor after: Hou Xiaoyi Inventor after: Li Zhen Inventor after: Chen Wei Inventor after: Li Hong Inventor after: Sun Jinzhao Inventor after: Wang Jijun Inventor before: Jiang Yiming Inventor before: Zhou Jiong Inventor before: Chen Jing Inventor before: Hou Xiaoyi Inventor before: Li Zhen Inventor before: Chen Wei Inventor before: Li Hong Inventor before: Sun Jinzhao Inventor before: Wang Jijun Inventor before: Wu Diyi |
|
CB03 | Change of inventor or designer information | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211229 Address after: 100176 floor 2, building 2, yard 19, Kechuang 10th Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing (Yizhuang group, high-end industrial area of Beijing Pilot Free Trade Zone) Patentee after: BEIJING U-PRECISION TECH Co.,Ltd. Patentee after: Hangzhou Tianrui Precision Technology Co.,Ltd. Address before: Room b1009, Tsinghua University, Haidian District, Beijing 100084 Patentee before: BEIJING U-PRECISION TECH Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 311300 room 801-14, building 1, No. 958, Dayuan Road, Qingshanhu street, Lin'an District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Tianrui Precision Technology Co.,Ltd. Country or region after: China Patentee after: BEIJING U-PRECISION TECH Co.,Ltd. Address before: 100176 floor 2, building 2, yard 19, Kechuang 10th Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing (Yizhuang group, high-end industrial area of Beijing Pilot Free Trade Zone) Patentee before: BEIJING U-PRECISION TECH Co.,Ltd. Country or region before: China Patentee before: Hangzhou Tianrui Precision Technology Co.,Ltd. |
|
CP03 | Change of name, title or address |