JPS57180120A - Monitoring device for beam annealing - Google Patents

Monitoring device for beam annealing

Info

Publication number
JPS57180120A
JPS57180120A JP6578381A JP6578381A JPS57180120A JP S57180120 A JPS57180120 A JP S57180120A JP 6578381 A JP6578381 A JP 6578381A JP 6578381 A JP6578381 A JP 6578381A JP S57180120 A JPS57180120 A JP S57180120A
Authority
JP
Japan
Prior art keywords
acoustic wave
wafer
laser beam
transducer
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6578381A
Other languages
Japanese (ja)
Other versions
JPH0347730B2 (en
Inventor
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP6578381A priority Critical patent/JPS57180120A/en
Publication of JPS57180120A publication Critical patent/JPS57180120A/en
Publication of JPH0347730B2 publication Critical patent/JPH0347730B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Abstract

PURPOSE:To detect an extent of the thermal treatment with wide operational region and large signal variation band by detecting acoustic wave generated along with beam radiation by an acoustic wave detection mechanism adhered to a part of a specimen. CONSTITUTION:A transducer 13 is pressed and adhered to a back of a wafer 3 by a jig and the surface of the wafer 3 is irradiated by a laser beam 1. The intensity of an acoustic wave signal detected by the transducer 13 is proportional to the power density of the laser beam but increases rapidly after the surface of the Si of the wafer 3 starts melting. After the molten state is reached, the intensity of the acoustic wave signal again becomes proportional to the power density of the laser beam. With this constitution, the extent of the thermal treatment can be detected by the acoustic wave.
JP6578381A 1981-04-30 1981-04-30 Monitoring device for beam annealing Granted JPS57180120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6578381A JPS57180120A (en) 1981-04-30 1981-04-30 Monitoring device for beam annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6578381A JPS57180120A (en) 1981-04-30 1981-04-30 Monitoring device for beam annealing

Publications (2)

Publication Number Publication Date
JPS57180120A true JPS57180120A (en) 1982-11-06
JPH0347730B2 JPH0347730B2 (en) 1991-07-22

Family

ID=13296973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6578381A Granted JPS57180120A (en) 1981-04-30 1981-04-30 Monitoring device for beam annealing

Country Status (1)

Country Link
JP (1) JPS57180120A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6210996B1 (en) 1995-01-13 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
JP2009158822A (en) * 2007-12-27 2009-07-16 Semiconductor Energy Lab Co Ltd Method of evaluating semiconductor layer, and method of manufacturing semiconductor substrate
US7714251B2 (en) 2005-11-23 2010-05-11 Semiconductor Energy Laboratory Co., Ltd Laser irradiation apparatus
JP2016149573A (en) * 2007-11-08 2016-08-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Pulse train annealing method and apparatus
US11040415B2 (en) 2007-11-08 2021-06-22 Applied Materials, Inc. Pulse train annealing method and apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LITTERS=1980 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6210996B1 (en) 1995-01-13 2001-04-03 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
US6468842B2 (en) 1995-01-13 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Laser illumination system
US6706570B2 (en) 1995-01-13 2004-03-16 Semiconductor Energy Laboratory Co., Ltd., Laser illumination system
US7528079B2 (en) 1995-01-13 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Method of changing an energy attenuation factor of a linear light in order to crystallize a semiconductor film
US7714251B2 (en) 2005-11-23 2010-05-11 Semiconductor Energy Laboratory Co., Ltd Laser irradiation apparatus
JP2016149573A (en) * 2007-11-08 2016-08-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Pulse train annealing method and apparatus
US11040415B2 (en) 2007-11-08 2021-06-22 Applied Materials, Inc. Pulse train annealing method and apparatus
JP2009158822A (en) * 2007-12-27 2009-07-16 Semiconductor Energy Lab Co Ltd Method of evaluating semiconductor layer, and method of manufacturing semiconductor substrate

Also Published As

Publication number Publication date
JPH0347730B2 (en) 1991-07-22

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