JP2005509275A - Ｃｖｄ用の複部構成の滑らかな基板支持部材 - Google Patents

Ｃｖｄ用の複部構成の滑らかな基板支持部材 Download PDF

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Publication number
JP2005509275A
JP2005509275A JP2002592174A JP2002592174A JP2005509275A JP 2005509275 A JP2005509275 A JP 2005509275A JP 2002592174 A JP2002592174 A JP 2002592174A JP 2002592174 A JP2002592174 A JP 2002592174A JP 2005509275 A JP2005509275 A JP 2005509275A
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JP
Japan
Prior art keywords
support
support members
shelf
glass substrate
support member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002592174A
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English (en)
Japanese (ja)
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JP2005509275A5 (enExample
Inventor
ウィリアム， エー． バーグリー，
エリッカ， エム． ラミレッツ，
ステファン， シー． ウォルガスト，
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2005509275A publication Critical patent/JP2005509275A/ja
Publication of JP2005509275A5 publication Critical patent/JP2005509275A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)
JP2002592174A 2001-05-22 2002-05-02 Ｃｖｄ用の複部構成の滑らかな基板支持部材 Pending JP2005509275A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29300901P 2001-05-22 2001-05-22
US09/963,020 US6528767B2 (en) 2001-05-22 2001-09-24 Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
PCT/US2002/013993 WO2002095808A1 (en) 2001-05-22 2002-05-02 Smooth multipart substrate support member for cvd

Publications (2)

Publication Number Publication Date
JP2005509275A true JP2005509275A (ja) 2005-04-07
JP2005509275A5 JP2005509275A5 (enExample) 2008-09-11

Family

ID=26967690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002592174A Pending JP2005509275A (ja) 2001-05-22 2002-05-02 Ｃｖｄ用の複部構成の滑らかな基板支持部材

Country Status (8)

Country Link
US (2) US6528767B2 (enExample)
EP (1) EP1390968B1 (enExample)
JP (1) JP2005509275A (enExample)
KR (1) KR100570559B1 (enExample)
CN (1) CN1276466C (enExample)
DE (1) DE60220787T2 (enExample)
TW (1) TW591685B (enExample)
WO (1) WO2002095808A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012023557A1 (ja) * 2010-08-20 2012-02-23 昭和電工株式会社 化合物半導体の製造装置、化合物半導体の製造方法及び化合物半導体
JP2015536048A (ja) * 2012-09-28 2015-12-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 改善されたエッジリングリップ
TWI579216B (zh) * 2013-06-20 2017-04-21 Kgt Graphit Tech Gmbh Fixed pin for fixed wafer in crystal boat and its manufacturing method

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* Cited by examiner, † Cited by third party
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US20040020789A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7374644B2 (en) * 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6528767B2 (en) * 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
KR100429296B1 (ko) * 2002-09-09 2004-04-29 한국전자통신연구원 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조방법
TWI220786B (en) * 2002-09-11 2004-09-01 Au Optronics Corp Supporting structure
JP2004260174A (ja) * 2003-02-25 2004-09-16 Samsung Electronics Co Ltd 半導体素子製造装置
US6917755B2 (en) * 2003-02-27 2005-07-12 Applied Materials, Inc. Substrate support
US20040226513A1 (en) * 2003-05-12 2004-11-18 Applied Materials, Inc. Chamber for uniform heating of large area substrates
US7355418B2 (en) * 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US8033245B2 (en) * 2004-02-12 2011-10-11 Applied Materials, Inc. Substrate support bushing
US7319335B2 (en) * 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
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US20030164362A1 (en) 2003-09-04
DE60220787D1 (de) 2007-08-02
CN1276466C (zh) 2006-09-20
KR100570559B1 (ko) 2006-04-13
WO2002095808A1 (en) 2002-11-28
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