JP4640917B2 - 基板支持体 - Google Patents
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- JP4640917B2 JP4640917B2 JP2004055056A JP2004055056A JP4640917B2 JP 4640917 B2 JP4640917 B2 JP 4640917B2 JP 2004055056 A JP2004055056 A JP 2004055056A JP 2004055056 A JP2004055056 A JP 2004055056A JP 4640917 B2 JP4640917 B2 JP 4640917B2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
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Description
発明の分野
[0002]本発明の実施形態は、基板支持体に関する。
[0003]薄膜トランジスタは、これまで、モニタ、フラットパネルディスプレイ、太陽電池、個人用の携帯情報端末(PDA)、携帯電話等に用いられる大きなガラス基板又はプレート上に作られてきた。トランジスタは、真空チャンバ内でアモルファスシリコン、ドープされた酸化ケイ素やドープされていない酸化ケイ素の双方、窒化ケイ素等を含む様々な膜の連続堆積によって作られる。薄膜の堆積に利用される一つの方法は、化学気相堆積(CVD)である。
[0007]ボールが基板支持体とその上に支持された基板間の損傷をできるだけ少なくするように適合した、基板を支持する装置を提供する。一実施形態においては、基板を支持する装置は傾斜したボール支持面上に配置されたボールを含んでいる。ボール支持面は、ボール支持面の片側に向かってボールが片寄るように適合し、よってその上に支持された基板が熱の影響に晒された時に長さが変化するのにつれてボールが回転する隙間ができる。他の実施形態においては、装置は、ボールをボール支持面に捕らえるように適合した保持器を更に含んでいる。
[0026]本発明は、一般には、基板損傷を減少させるのに有利に適した基板を支持するためのスペーサに関する。スペーサは基板が温度の変化を受けるチャンバに特に用いられるが、スペーサが基板を引っ掻くことを避けることが望まれる他のチャンバでの使用にも適している。
Claims (43)
- 少なくとも1つの基板支持部材がチャンバ内に配置されたチャンバ内に基板を支持する装置であって、
上面を有する基板支持部材と、
該上面上に配置された複数のスペーサと、
該複数のスペーサの少なくとも一つに形成されたローラ支持面であって、該ローラ支持面は、該基板支持部材の該上面によって画成された平面に対して傾斜する、ローラ支持面と、
該ローラ支持面上に配置され且つ該ローラ支持面上において横に移動するように適合したローラであって、該ローラは、該複数のスペーサの該少なくとも一つのスペーサの面と隔置された関係で該基板と接触し支持するように適合し、該ローラ支持面の下部に付勢された、前記ローラと、
を含む、前記装置。 - 該ローラ支持面が水平から0.5〜2度の角度で傾斜する、請求項1記載の装置。
- 該ローラの一部が伸びている上向きのスロットを持つ、該ローラを該ローラ支持面に保持する保持器を更に含む、請求項1記載の装置。
- 該ローラと該保持器の上部との間に配置され且つ外径が該スロットの幅より広いワッシャーを更に含む、請求項3記載の装置。
- 該基板支持部材が加熱素子を備える、請求項1記載の装置。
- 該ローラ支持面が湾曲している、請求項1記載の装置。
- 該スペーサが該支持部材に固定されて該支持部材に相対する該スペーサの向きが固定されている、請求項1記載の装置。
- 該ローラの一部が伸びている上向きのスロットを持つ、該スペーサに結合し且つ該ローラを該ローラ支持面に保持している保持器を更に含む、請求項1記載の装置。
- 該ローラと該保持器の該上部との間に配置され且つ径が該スロットの幅より広いワッシャーを更に含む、請求項8記載の装置。
- 該ローラが該基板支持部材の中心に向かって片寄っている、請求項1記載の装置。
- 該ローラと接触するとともに該ローラを横に押し付ける付勢部材を更に含む、請求項1記載の装置。
- 該付勢部材が
ばねと、
該ばねによって該ローラに対して押し付けられた接触部材とを更に含む、請求項11記載の装置。 - 該ローラが球、楕円形ピン又はカムである、請求項1記載の装置。
- 該ローラ支持面が
第1傾斜面と、
ローラ支持長さが該第1傾斜面より短い、該第1傾斜面に結合した第2傾斜面とを更に含む、請求項1記載の装置。 - 該第1傾斜面と第2傾斜面が湾曲面によって結合している、請求項14記載の装置。
- 該ローラが該第1傾斜面と該第2傾斜面に沿って移動し得る、請求項14記載の装置。
- 基板を支持する装置であって、
上面を持つ基板支持部材と、
該上面の周囲に配置され且つ該上面に相対して隔置された関係でその上に該基板を支持するように適合した複数のローラであって、該上面の該周囲から離れて片寄っている、前記ローラと、
複数のスペーサであって、該複数のスペーサの各々は該支持部材に結合した下端と該スペーサの中に該ローラ支持面が形成された上端とを有するとともに、該ローラ支持面は、該基板支持部材の該上面によって画成された平面に対して傾斜し、該ローラ支持面上において該複数のローラの各々が横方向に移動する、複数のスペーサと、
を含む、前記装置。 - 該ローラ支持面が湾曲している、請求項17記載の装置。
- 該ローラを該ローラ支持面に捕らえ、その中にスロットが形成された保持器であって、該ローラの一部が該スロットを通って伸び、該ローラ支持面を横切って横に移動可能である、前記保持器を更に含む、請求項17記載の装置。
- 該ローラと該保持器との間に配置され、外径が該スロットの幅より大きいワッシャーを更に含む、請求項19記載の装置。
- 該支持部材に結合した複数のスペーサと、
各スペーサ内に形成され、該ローラの1つを支持しているローラ支持面と、
各スペーサに結合し、該ローラを該スペーサに捕らえる保持器であって、スロットがそれを通って形成されており、該ローラの一部が該スロットを通って伸びている、前記保持器と、を更に含む、請求項17記載の装置。 - 該保持器と該スペーサが該ローラ支持面と該スロットとを予め決められた向きに整列するようにかみ合っている、請求項21記載の装置。
- 外径が該スロットの幅より大きい、該ローラと該保持器との間に配置されたワッシャーを更に含む、請求項21記載の装置。
- 該ローラが被覆、めっき又は電気研磨されている、請求項17記載の装置。
- 該ローラがクロム、アルミニウム合金、窒化ケイ素又は窒化タングステンを被覆又はめっきされている、請求項17記載の装置。
- 該支持部材に熱的に結合した加熱素子を更に含む、請求項17記載の装置。
- 各スペーサがその中に形成された溝を持ち、該溝の底面が該溝の片側に近い第1位置の中に該ローラを押し付け、第1位置にある時にローラが該溝の壁から隔置されている、複数のスペーサを更に含む、請求項17記載の装置。
- ガラス基板を支持する装置であって、
チャンバ本体と、
該チャンバ本体内に配置された少なくとも1つの基板支持部材と、
複数のスペーサであって、該複数のスペーサのそれぞれが該基板支持部材上に配置された下部と上部を持つ複数のスペーサと、
該スペーサの少なくとも1つの該上部に形成された溝であって、該溝は、該基板支持部材の上面に対して傾斜するローラ支持面の一部を画成する溝と、
該溝の中に配置され且つ該溝を横切って横に回転するように適合したローラと、
を含む、前記装置。 - 該基板支持部材がそれに熱的に結合した加熱素子を更に含んでいる、請求項28記載の装置。
- 該ローラ支持面が湾曲している、請求項28記載の装置。
- 該溝の中に配置された該ローラが共通の基準点を通って整列した方向に横に移動するように適合している、請求項28記載の装置。
- 該下部が該支持部材に固定されて予め決められた向きに該スペーサを回転して整列させる、請求項28記載の装置。
- 該チャンバ本体が熱処理チャンバである、請求項28記載の装置。
- 該チャンバ本体が
第1側壁上に配置された第1基板搬送ポートと、
第2側壁上に配置された第2基板搬送ポートと、を更に含む、請求項28記載の装置。 - 該ローラを該スペーサに捕らえる保持器と、
該保持器を通って形成され且つ該ローラの一部がそれを通って伸びているスロットと、を更に含む、請求項28記載の装置。 - 外径が該スロットの幅より大きい、該ローラと該保持器との間に配置されたワッシャーを更に含む、請求項35記載の装置。
- ガラス基板を支持する装置であって、
処理チャンバと、
該チャンバ内に配置された、上面を有する複数の加熱される基板支持部材と、
該複数の基板支持部材の各々に配置された複数のスペーサであって、該複数のスペーサのそれぞれが上部と下部を持ち、該下部が該基板支持部材の上面に結合している、複数のスペーサと、
該基板支持部材の該上面の対向面上に配置された該スペーサの少なくとも2つの該上部に配置され、該基板支持部材の中央部に向かって付勢されたローラであって、該ローラは、該少なくとも2つのスペーサの一つの上部に形成されたローラ支持面に配置され、該ローラ支持面は、該基板支持部材の該上面によって画成された平面に対して傾斜し、該ローラは、該ローラ支持面において横方向に移動するとともに該基板支持部材に隔置された関係で該ガラス基板を支持するように適合した、前記ローラと、を含む、前記装置。 - 該処理チャンバが熱処理チャンバである、請求項37記載の装置。
- 該ローラを該スペーサに捕らえ、その中に上向きのスロットが形成されて、該ローラの一部がそれを通って伸び且つ該支持部材の該中心から離れて横に移動することができる保持器を更に含む、請求項37記載の装置。
- 外径が該スロットの幅より広い、該ローラと該保持器との間に配置されたワッシャーを更に含む、請求項39記載の装置。
- ガラス基板を支持する装置であって、
第1側壁内に配置された第1基板搬送ポートと、第2側壁内に配置された第2基板搬送ポートとを持つロードロックチャンバと、
該ロードロックチャンバ内に配置された少なくとも1つの基板支持部材と、
該基板支持部材上に配置された複数のスペーサであって、該複数のスペーサのそれぞれが上部と下部を有し、該下部が該基板支持部材に結合した、複数のスペーサと、
該スペーサの少なくとも1つの該上部に形成された溝であって、該溝は、該基板支持部材の上面に対して傾斜するローラ支持面の一部を画成する溝と、
該溝内に配置され且つ該溝を横切って横に回転するように適合したローラと、を含む、前記装置。 - 該ローラを該スペーサの該上部に捕らえ、上向きのスロットがその中に形成され、該ローラの一部がそれを通って伸びるとともに該ローラを横切って横に移動する保持器を更に含む、請求項41記載の装置。
- 外径が該スロットの幅より広い、該ローラと該保持器との間に配置されたワッシャーを更に含む、請求項42記載の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US10/376,857 US6917755B2 (en) | 2003-02-27 | 2003-02-27 | Substrate support |
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JP2004260191A JP2004260191A (ja) | 2004-09-16 |
JP4640917B2 true JP4640917B2 (ja) | 2011-03-02 |
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JP2004055056A Expired - Fee Related JP4640917B2 (ja) | 2003-02-27 | 2004-02-27 | 基板支持体 |
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US (1) | US6917755B2 (ja) |
EP (1) | EP1511077A3 (ja) |
JP (1) | JP4640917B2 (ja) |
KR (1) | KR100625407B1 (ja) |
CN (1) | CN100353517C (ja) |
TW (1) | TWI264081B (ja) |
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- 2004-02-26 EP EP04004357A patent/EP1511077A3/en not_active Withdrawn
- 2004-02-27 CN CNB2004100060615A patent/CN100353517C/zh not_active Expired - Fee Related
- 2004-02-27 KR KR1020040013532A patent/KR100625407B1/ko active IP Right Grant
- 2004-02-27 JP JP2004055056A patent/JP4640917B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
TW200426968A (en) | 2004-12-01 |
KR20040077554A (ko) | 2004-09-04 |
CN1542939A (zh) | 2004-11-03 |
US6917755B2 (en) | 2005-07-12 |
JP2004260191A (ja) | 2004-09-16 |
TWI264081B (en) | 2006-10-11 |
CN100353517C (zh) | 2007-12-05 |
EP1511077A3 (en) | 2006-08-23 |
EP1511077A8 (en) | 2005-07-20 |
EP1511077A2 (en) | 2005-03-02 |
US20040170407A1 (en) | 2004-09-02 |
KR100625407B1 (ko) | 2006-09-19 |
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